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1. 发明授权

US5321354A Method for inspecting semiconductor devices 失效
标题翻译：检测半导体器件的方法
公开(公告)号：US5321354A
公开(公告)日：1994-06-14
申请号：US842121
申请日：1992-05-18
申请人： Yoshimasa Ooshima , Toshio Shimizu , Katsuya Iida , Fumiaki Kumazawa
发明人： Yoshimasa Ooshima , Toshio Shimizu , Katsuya Iida , Fumiaki Kumazawa
IPC分类号： G01R31/28 , G01R31/30 , G06F11/22 , H01L21/66
CPC分类号： G06F11/2273 , G01R31/3004
摘要： A method for detecting the quality of a semiconductor device using a static current that flows in a state wherein internal elements are fixed, the semiconductor device has internal elements, such as MISFETs and complementary MISFETs in particular. By using a pattern group that controls the state of nodes of the internal elements or ON/OFF and other states of MISFETs that comprise the internal elements, as a test pattern group used for this inspection, faults involving long range reliability in addition to degenerate faults and those faults detected using conventional fault simulation may be detected. In the inspection method based on static current, observability of faults at output terminals need not be taken into consideration, so that the number of patterns in the test pattern group used for inspection may be less and may be easily created.
摘要翻译： PCT No.PCT / JP91 / 00971 Sec。 371日期：1992年5月18日 102（e）日期1992年5月18日PCT提交1991年7月9日PCT公布。第WO92 / 01942号公报日期：1992年2月6日。一种用于使用在内部元件固定的状态下流动的静电流来检测半导体器件的质量的方法，该半导体器件具有诸如MISFET和互补MISFET的内部元件。通过使用控制内部元件的节点状态的图案组或ON / OFF以及包含内部元件的MISFET的其他状态，作为用于该检查的测试图案组，除了退化故障之外还涉及长距离可靠性并且可以检测使用常规故障模拟检测到的那些故障。在基于静态电流的检查方法中，不需要考虑输出端子故障的可观察性，因此用于检查的测试图案组中的图案数量可能较少，可能容易创建。

2. 发明授权

US07231079B2 Method and system for inspecting electronic circuit pattern 有权
标题翻译：检查电路图的方法和系统
公开(公告)号：US07231079B2
公开(公告)日：2007-06-12
申请号：US10050519
申请日：2002-01-18
申请人： Hirohito Okuda , Yuji Takagi , Masahiro Watanabe , Shunji Maeda , Minori Noguchi , Yoshimasa Ooshima , Makoto Ono
发明人： Hirohito Okuda , Yuji Takagi , Masahiro Watanabe , Shunji Maeda , Minori Noguchi , Yoshimasa Ooshima , Makoto Ono
IPC分类号： G06K9/00
CPC分类号： G01N21/956 , G01N21/9501 , G01N2021/8854 , G01N2021/8861
摘要： For the purpose of reducing a false report and shortening inspection time, an area to be inspected is locally inspected under optimum inspection conditions. In order to avoid the number of detected defects from increasing explosively, and thereby to facilitate control of a critical defect, general-purpose layout data, which is used for producing a mask of a semiconductor wafer, is accumulated in a design information server 2. With reference to the layout data, an area to be inspected, which is inspected by a pattern inspecting apparatus 1, is divided into partial inspection areas including a cell portion and a non-cell portion. Inspection parameters are set for each of the partial inspection areas. In addition, the defect reviewing apparatus 8 obtains an inspection result of the pattern inspecting apparatus 1. When obtaining a defect image, the defect reviewing apparatus 8 identifies a position, where the defect occurred, from among a cell portion, a non-cell portion, a pattern dense portion, and the like according to layout data. Moreover, the defect reviewing apparatus 8 sets inspection parameters, such as pickup magnification of this defect, in response to a result of the identification to set a control criterion of criticality.
摘要翻译：为了减少虚假报告和缩短检查时间，在最佳检查条件下对被检查区域进行局部检查。为了避免检测到的缺陷数量爆炸性增加，从而有利于控制关键缺陷，用于制造半导体晶片的掩模的通用布局数据被累积在设计信息服务器2中。参照布局数据，由图案检查装置1检查的被检查区域被划分为包括单元部分和非单元部分的局部检查区域。为每个部分检查区域设置检查参数。另外，缺陷检查装置8获得图案检查装置1的检查结果。当获得缺陷图像时，缺陷检查装置8根据布局数据从单元部分，非单元部分，图案密集部分等中识别发生缺陷的位置。此外，缺陷检查装置8响应于识别的结果设置检查参数，例如该缺陷的拾取倍率，以设置关键性的控制标准。

3. 发明授权

US07115892B2 Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
公开(公告)号：US07115892B2
公开(公告)日：2006-10-03
申请号：US11302847
申请日：2005-12-13
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N21/88
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.

4. 发明授权

US07511806B2 Apparatus and method for inspecting defects 失效
标题翻译：用于检查缺陷的装置和方法
公开(公告)号：US07511806B2
公开(公告)日：2009-03-31
申请号：US11931120
申请日：2007-10-31
申请人： Akira Hamamatsu , Minori Noguchi , Yoshimasa Ooshima , Hidetoshi Nishiyama , Tetsuya Watanabe
发明人： Akira Hamamatsu , Minori Noguchi , Yoshimasa Ooshima , Hidetoshi Nishiyama , Tetsuya Watanabe
IPC分类号： G01N21/00
CPC分类号： G01N21/9501
摘要： A defect-inspecting apparatus including an arrangement to convert detected light into a first signal corresponding to light illuminated by a high-angle illumination optical system and/or a second signal corresponding to light illuminated by a low-angle illumination optical system; and a classification unit which utilizes the first and second signal and classifies defects on the object to be inspected, wherein a defect size is estimated by changing a correction coefficient of the defect size on a basis of a concave-convex level (b/a), where the concave-convex level (b/a) of a defect is indicated by a ratio of a size b of a first direction of the defect to a size a of a second direction of the defect, where the second direction is lateral to the first direction.
摘要翻译：一种缺陷检查装置，包括将检测到的光转换成对应于由高角度照明光学系统照射的光的第一信号和/或对应于由低角度照明光学系统照射的光的第二信号的装置; 以及分类单元，其利用所述第一信号和所述第二信号并对所检查的物体进行缺陷分类，其中通过基于凹凸水平（b / a）改变所述缺陷尺寸的校正系数来估计缺陷尺寸，其中缺陷的凹凸级（b / a）由缺陷的第一方向的尺寸b与缺陷的第二方向的尺寸a的比值表示，其中第二方向与第第一个方向。

5. 发明授权

US06998630B2 Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
公开(公告)号：US06998630B2
公开(公告)日：2006-02-14
申请号：US10933977
申请日：2004-09-03
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N21/88
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.

6. 发明申请

US20050024633A1 Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
标题翻译：用于检查半导体器件的颗粒或缺陷的方法及其装置
公开(公告)号：US20050024633A1
公开(公告)日：2005-02-03
申请号：US10933977
申请日：2004-09-03
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N21/88 , G01N21/94
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要翻译：通常，作为检测结果，粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。对于制造过程中的故障采取对策，分析检查装置检测到的颗粒/缺陷。由于检查装置输出大量检测到的粒子/缺陷，所以需要巨大的时间来分析检测到的粒子/缺陷，从而导致制造过程中的失败的对策的延迟。在本发明中，用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。数据处理电路从检查结果统计中指出故障原因，并显示检查结果信息。通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析，以统计学评价检测出的粒子。

7. 发明申请

US20120062890A1 Method and Its Apparatus for Inspecting Particles or Defects of a Semiconductor Device 审中-公开
标题翻译：检测颗粒的方法及其装置或半导体器件的缺陷
公开(公告)号：US20120062890A1
公开(公告)日：2012-03-15
申请号：US13298079
申请日：2011-11-16
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N15/02
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要翻译：通常，作为检测结果，粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。对于制造过程中的故障采取对策，分析检查装置检测到的颗粒/缺陷。由于检查装置输出大量检测到的粒子/缺陷，所以需要巨大的时间来分析检测到的粒子/缺陷，从而导致制造过程中的失败的对策的延迟。在本发明中，用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。数据处理电路从检查结果统计中指出故障原因，并显示检查结果信息。通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析，以统计学评价检测出的粒子。

8. 发明申请

US20060091332A1 Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
公开(公告)号：US20060091332A1
公开(公告)日：2006-05-04
申请号：US11302847
申请日：2005-12-13
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N21/86
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.

9. 发明授权

US06797975B2 Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
标题翻译：用于检查半导体器件的颗粒或缺陷的方法及其装置
公开(公告)号：US06797975B2
公开(公告)日：2004-09-28
申请号：US09931997
申请日：2001-08-17
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N2188
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要翻译：通常，作为检测结果，粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。对于制造过程中的故障采取对策，分析检查装置检测到的颗粒/缺陷。由于检查装置输出大量检测到的粒子/缺陷，所以需要巨大的时间来分析检测到的粒子/缺陷，从而导致制造过程中的失败的对策的延迟。在本发明中，用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。数据处理电路从检查结果统计中指出故障原因，并显示检查结果信息。通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析，以统计学评价检测出的粒子。

10. 发明申请

US20070257214A1 Method and apparatus for inspecting particles or defects of a semiconductor device 审中-公开
标题翻译：用于检查半导体器件的颗粒或缺陷的方法和装置
公开(公告)号：US20070257214A1
公开(公告)日：2007-11-08
申请号：US11827522
申请日：2007-07-11
申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
发明人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ooshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
IPC分类号： G01N21/88
CPC分类号： G01N21/4738 , G01N21/8806 , G01N21/93 , G01N21/94 , G01N21/9501 , G01N2015/1486 , G01N2015/1493
摘要： Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要翻译：通常，作为检测结果，粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。对于制造过程中的故障采取对策，分析检查装置检测到的颗粒/缺陷。由于检查装置输出大量检测到的粒子/缺陷，所以需要巨大的时间来分析检测到的粒子/缺陷，从而导致制造过程中的失败的对策的延迟。在本发明中，用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。数据处理电路从检查结果统计中指出故障原因，并显示检查结果信息。通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析，以统计学评价检测出的粒子。

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