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    • 1. 发明授权
    • Method and apparatus for detecting defects
    • 检测缺陷的方法和装置
    • US07426023B2
    • 2008-09-16
    • US11296290
    • 2005-12-08
    • Yoshimasa OhshimaHisafumi IwataHiroyuki Nakano
    • Yoshimasa OhshimaHisafumi IwataHiroyuki Nakano
    • G01N21/00
    • G01N21/47G01N21/21G01N21/94G01N21/9501G01N2021/8825
    • There is disclosed a defect detecting apparatus that focuses a laser beam, irradiates it onto the surface of a sample to be examined, and detects a foreign substance/defect existing on the surface from the scattered light as a result of the irradiation of the beam onto the sample surface. In order to stably detect defects such as foreign substance, the defect detecting apparatus according to the invention is constructed to use a beam shape optical system by which the laser beam emitted from a laser source is shaped to change the illumination intensity from its Gauss distribution to a flat distribution so that the detected signal can be stably produced even if the relative position of a defect/foreign substance to the laser beam irradiation position is changed.
    • 公开了一种将激光束聚焦并将其照射到待检查样品的表面上的缺陷检测装置,并且由于将光束照射到散射光上而检测存在于表面上的异物/缺陷 样品表面。 为了稳定地检测异物等缺陷,根据本发明的缺陷检测装置的结构是使用光束形状光学系统,通过该光束系统将从激光源发射的激光束成形为将照射强度从其高斯分布改变为 平坦分布,使得即使改变了缺陷/异物与激光束照射位置的相对位置,也能够稳定地产生检测信号。
    • 8. 发明授权
    • Method and apparatus for detecting defects
    • 检测缺陷的方法和装置
    • US07643139B2
    • 2010-01-05
    • US11206209
    • 2005-08-18
    • Yoshimasa OhshimaMinori NoguchiHiroyuki Nakano
    • Yoshimasa OhshimaMinori NoguchiHiroyuki Nakano
    • G01N21/00
    • G01N21/9505G01N21/47G01N21/94G01N21/9501
    • An inspection apparatus projects a laser beam on the surface of a SOI wafer and detects foreign matter on and defects in the surface of the SOI wafer by receiving scattered light reflected from the surface of the SOI wafer. The wavelength of the laser beam used by the inspection apparatus is determined so that a penetration depth of the laser beam in a Si thin film may be 10 nm or below to detect only foreign matter on and defects in the outermost surface and not to detect foreign matter and defects in a BOX layer. Only the foreign matter on and defects in the outermost surface layer can be detected without being influenced by thin-film interference by projecting the laser beam on the surface of the SOI wafer and receiving scattered light rays.
    • 检查装置将激光束投射在SOI晶片的表面上,通过接收从SOI晶片的表面反射的散射光来检测SOI晶片的异物和表面的缺陷。 确定检查装置使用的激光束的波长,使得Si薄膜中的激光束的穿透深度可以为10nm以下,仅检测异物和最外表面的缺陷,并且不检测外部 BOX层的物质和缺陷。 只有通过将激光束投射在SOI晶片的表面上并且接收散射光线,才能够检测出最外层的异物和缺陷,而不受薄膜干涉的影响。