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1. 发明授权

US5970314A Process for vapor phase epitaxy of compound semiconductor 失效
标题翻译：化合物半导体气相外延工艺
公开(公告)号：US5970314A
公开(公告)日：1999-10-19
申请号：US823237
申请日：1997-03-24
申请人： Takuji Okahisa , Mitsuru Shimazu , Masato Matsushima , Yoshiki Miura , Kensaku Motoki , Hisashi Seki , Akinori Koukitu
发明人： Takuji Okahisa , Mitsuru Shimazu , Masato Matsushima , Yoshiki Miura , Kensaku Motoki , Hisashi Seki , Akinori Koukitu
IPC分类号： C30B25/02 , C30B29/38 , H01L21/205 , H01L33/12 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/323 , H01L21/00 , C30B25/14 , H01L21/20 , H01L21/36
CPC分类号： C30B25/02 , C30B29/403 , H01L33/0075
摘要： A process for forming a high quality epitaxial compound semiconductor layer of indium gallium nitride In.sub.x Ga.sub.1-x N, (where 0
摘要翻译：在衬底上形成氮化铟镓In x Ga 1-x N（其中0

2. 发明授权

US6031252A Epitaxial wafer and method of preparing the same 失效
标题翻译：外延晶片及其制备方法
公开(公告)号：US6031252A
公开(公告)日：2000-02-29
申请号：US705330
申请日：1996-08-29
申请人： Yoshiki Miura , Mitsuru Shimazu , Kensaku Motoki , Takuji Okahisa , Masato Matsushima , Hisashi Seki , Akinori Koukitu
发明人： Yoshiki Miura , Mitsuru Shimazu , Kensaku Motoki , Takuji Okahisa , Masato Matsushima , Hisashi Seki , Akinori Koukitu
IPC分类号： C30B29/40 , H01L21/20 , H01L33/16 , H01L33/32 , H01L33/00
CPC分类号： H01L33/0075 , H01L21/02392 , H01L21/02395 , H01L21/0254 , H01L21/0262
摘要： An epitaxial wafer enabling epitaxial growth at a high temperature includes a compound semiconductor substrate containing As or P, and a covering layer including GaN; or InN; or AlN; or a nitride mixed-crystalline material containing Al, Ga, In and N. The covering layer covers at least a front surface and a back surface of the substrate. A method of preparing such an epitaxial wafer including steps of growing the covering layer at a growth temperature of at least 300.degree. C. and less than 800.degree. C. so as to cover at least the front and back surfaces of the substrate, and then annealing the substrate having the covering thereon layer at a temperature of at least 700.degree. C. and less than 1200.degree. C.
摘要翻译：能够在高温下进行外延生长的外延晶片包括含有As或P的化合物半导体衬底和包括GaN的覆盖层; 或InN; 或AlN; 或包含Al，Ga，In和N的氮化物混晶材料。覆盖层至少覆盖基板的前表面和后表面。一种制备这样的外延晶片的方法，包括以下步骤：在至少300℃和小于800℃的生长温度下生长覆盖层，以便至少覆盖基材的前表面和后表面，然后在其上具有覆盖层的基板在至少700℃且小于1200℃的温度下退火。

3. 发明授权

US06387722B1 Methods for preparing an epitaxial wafer having a gallium nitride epitaxial layer deposited on a semiconductor substrate 失效
标题翻译：制备具有沉积在半导体衬底上的氮化镓外延层的外延晶片的方法
公开(公告)号：US06387722B1
公开(公告)日：2002-05-14
申请号：US09578704
申请日：2000-05-26
申请人： Kensaku Motoki , Masato Matsushima , Katsushi Akita , Mitsuru Shimazu , Kikurou Takemoto , Hisashi Seki , Akinori Koukitu
发明人： Kensaku Motoki , Masato Matsushima , Katsushi Akita , Mitsuru Shimazu , Kikurou Takemoto , Hisashi Seki , Akinori Koukitu
IPC分类号： H01L2100
CPC分类号： H01L21/0254 , H01L21/02395 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/0075
摘要： The present invention provides an epitaxial wafer comprising a (111) substrate of a semiconductor having cubic crystal structure, a first GaN layer having a thickness of 60 nanometers or more, a second GaN layer having a thickness of 0.1 &mgr;m or more and a method for preparing it.
摘要翻译：本发明提供一种外延晶片，其包括具有立方晶体结构的半导体的（111）基板，厚度为60纳米以上的第一GaN层，厚度为0.1μm以上的第二GaN层，以及做好准备

4. 发明授权

US06270587B1 Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same 失效
标题翻译：具有沉积在半导体衬底上的氮化镓外延层的外延晶片及其制备方法
公开(公告)号：US06270587B1
公开(公告)日：2001-08-07
申请号：US09041109
申请日：1998-03-12
申请人： Kensaku Motoki , Masato Matsushima , Katsushi Akita , Mitsuru Shimazu , Kikurou Takemoto , Hisashi Seki , Akinori Koukitu
发明人： Kensaku Motoki , Masato Matsushima , Katsushi Akita , Mitsuru Shimazu , Kikurou Takemoto , Hisashi Seki , Akinori Koukitu
IPC分类号： H01L2912
CPC分类号： H01L21/0254 , H01L21/02395 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/0075
摘要： The present invention provides an epitaxial wafer comprising a (111) substrate of a semiconductor having cubic crystal structure, a first GaN layer having a thickness of 60 nanometers or more, a second GaN layer having a thickness of 0.1 &mgr;m or more and a method for preparing it.
摘要翻译：本发明提供一种外延晶片，其包括具有立方晶体结构的半导体的（111）基板，厚度为60纳米以上的第一GaN层，厚度为0.1μm以上的第二GaN层，以及做好准备

5. 发明授权

US5756374A Compound semiconductor light emitting device and method of preparing the same 失效
标题翻译：化合物半导体发光器件及其制备方法
公开(公告)号：US5756374A
公开(公告)日：1998-05-26
申请号：US856911
申请日：1997-05-15
申请人： Yoshiki Miura , Hideki Matsubara , Masato Matsushima , Hisashi Seki , Akinori Koukitu
发明人： Yoshiki Miura , Hideki Matsubara , Masato Matsushima , Hisashi Seki , Akinori Koukitu
IPC分类号： H01L33/00 , H01L33/32 , H01L21/00 , C30B23/00 , H01L21/20 , H01L21/36
CPC分类号： H01L33/32 , H01L33/0075 , Y10S438/925
摘要： A compound semiconductor light emitting device of high performance and a method which can industrially prepare the same are provided. The compound semiconductor light emitting device includes a GaAs substrate, a buffer layer consisting of GaN, having a thickness of 10 nm to 80 nm, which is formed on the substrate, an epitaxial layer consisting of Al.sub.x Ga.sub.1-x N(0.ltoreq.x
摘要翻译：提供了一种高性能的化合物半导体发光器件及其工业上的制备方法。化合物半导体发光器件包括GaAs衬底，由GaN构成的缓冲层，其厚度为10nm至80nm，其形成在衬底上，外延层由Al x Ga 1-x N（0

6. 发明授权

US5843590A Epitaxial wafer and method of preparing the same 失效
标题翻译：外延晶片及其制备方法
公开(公告)号：US5843590A
公开(公告)日：1998-12-01
申请号：US574628
申请日：1995-12-19
申请人： Yoshiki Miura , Keiichiro Fujita , Kikurou Takemoto , Masato Matsushima , Hideki Matsubara , Shigenori Takagishi , Hisashi Seki , Akinori Koukitu
发明人： Yoshiki Miura , Keiichiro Fujita , Kikurou Takemoto , Masato Matsushima , Hideki Matsubara , Shigenori Takagishi , Hisashi Seki , Akinori Koukitu
IPC分类号： H01L21/20 , H01L33/00 , H01L33/02 , B32B18/00
CPC分类号： H01L33/025 , H01L21/02392 , H01L21/02395 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/0075
摘要： A high performance epitaxial wafer which is useful, for example in a light emitting device is produced with a buffer layer. The epitaxial wafer has a substrate of a compound semiconductor selected from a group consisting of GaAs, GaP, InAs and InP. The buffer layer of GaN is grown on the substrate to a thickness within the range of 10 nm to 80 nm. An epitaxial layer of GaN is formed on the buffer layer. The buffer layer is grown at a first temperature by organic metal chloride vapor phase epitaxy, while the epitaxial layer is grown at a second temperature, which is higher than the first temperature, by the organic metal chloride vapor phase epitaxy.
摘要翻译：例如在发光器件中有用的高性能外延晶片由缓冲层制成。外延晶片具有选自GaAs，GaP，InAs和InP的化合物半导体的衬底。在衬底上生长GaN的缓冲层至10nm至80nm范围内的厚度。在缓冲层上形成GaN的外延层。缓冲层通过有机金属氯化物气相外延在第一温度下生长，而外延层通过有机金属氯化物气相外延在比第一温度高的第二温度下生长。

7. 发明授权

US5665986A Compound semiconductor light emitting device and method of preparing the same 失效
标题翻译：化合物半导体发光器件及其制备方法
公开(公告)号：US5665986A
公开(公告)日：1997-09-09
申请号：US614837
申请日：1996-03-07
申请人： Yoshiki Miura , Hideki Matsubara , Masato Matsushima , Hisashi Seki , Akinori Koukitu
发明人： Yoshiki Miura , Hideki Matsubara , Masato Matsushima , Hisashi Seki , Akinori Koukitu
IPC分类号： H01L33/00 , H01L33/32 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/32 , H01L33/0075 , Y10S438/925
摘要： A compound semiconductor light emitting device of high performance and a method which can industrially prepare the same are provided. The compound semiconductor light emitting device includes a GaAs substrate, a buffer layer consisting of GaN, having a thickness of 10 nm to 80 nm, which is formed on the substrate, an epitaxial layer consisting of Al.sub.x Ga.sub.1-x N (0.ltoreq.x
摘要翻译：提供了一种高性能的化合物半导体发光器件及其工业上的制备方法。化合物半导体发光器件包括GaAs衬底，由GaN构成的缓冲层，其厚度为10nm至80nm，其形成在衬底上，外延层由Al x Ga 1-x N（0

8. 发明授权

US5864573A Epitaxial wafer and compound semiconductor light emitting device, and method of fabricating the same 失效
标题翻译：外延晶片和化合物半导体发光器件及其制造方法
公开(公告)号：US5864573A
公开(公告)日：1999-01-26
申请号：US636563
申请日：1996-04-23
申请人： Yoshiki Miura , Hideki Matsubara , Hisashi Seki , Akinori Koukitu
发明人： Yoshiki Miura , Hideki Matsubara , Hisashi Seki , Akinori Koukitu
IPC分类号： H01L21/205 , H01L33/12 , H01L33/32 , H01S5/02 , H01S5/323 , H01S3/19 , H01L21/20
CPC分类号： H01L21/02392 , H01L21/02395 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A compound semiconductor light emitting device having a long life and high performance and a method for industrially fabricating the same are provided. The compound semiconductor light emitting device includes a GaP substrate, a buffer layer consisting of InN which is formed on the substrate, a relaxation layer consisting of In.sub.x Ga.sub.1-x N which is formed on the buffer layer, and a luminescent layer consisting of In.sub.k Ga.sub.1-k N which is formed on the relaxation layer. In this description, k represents a constant value within the range of 0
摘要翻译：提供了具有长寿命和高性能的化合物半导体发光器件及其工业制造方法。化合物半导体发光器件包括GaP衬底，由衬底上形成的InN构成的缓冲层，形成在缓冲层上的由In x Ga 1-x N构成的弛豫层和由InkGa1-kN组成的发光层，形成在松弛层上。在本说明书中，k表示在0

9. 发明授权

US07843040B2 Gallium nitride baseplate and epitaxial substrate 有权
标题翻译：氮化镓基板和外延基板
公开(公告)号：US07843040B2
公开(公告)日：2010-11-30
申请号：US12326108
申请日：2008-12-02
申请人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
发明人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
IPC分类号： H01L29/20
CPC分类号： C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/0254 , H01L21/02581 , H01L21/0262
摘要： A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate (1), such as a (0001)-cut sapphire substrate, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus (11). Next, gaseous iron compound GFe from a source (13) for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source (15) are caused to react with each other in a mixing container (16) to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source (17), and second substance gas GGa containing elemental gallium are supplied to a reaction tube (21) to form iron-doped gallium nitride (23) on the substrate (1).
摘要翻译：提供了一种形成用于半绝缘GaN衬底的掺杂铁的氮化镓的方法。将诸如（0001）切割蓝宝石衬底的衬底（1）放置在金属有机氯化物气相装置（11）的基座上。接下来，使来自氯化氢源（15）的铁化合物源（13）和来自氯化氢源（15）的氯化氢气体G1HCl的气态铁化合物GFe在混合容器（16）中彼此反应，生成气体GFeComp的含铁反应产物，如氯化铁（FeCl2）。与该产生相关，含铁反应产物GFeComp，含有氮源（17）的元素氮的第一物质气体GN和含有元素镓的第二物质气体GGa被供给到反应管（21）中，在衬底（1）上的掺杂氮化镓（23）。

10. 发明申请

US20070215982A1 Gallium Nitride Baseplate, Epitaxial Substrate, and Method of Forming Gallium Nitride 失效
标题翻译：氮化镓基板，外延基板和形成氮化镓的方法
公开(公告)号：US20070215982A1
公开(公告)日：2007-09-20
申请号：US11276966
申请日：2006-03-20
申请人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
发明人： Akinori Koukitu , Yoshinao Kumagai , Yoshiki Miura , Kikurou Takemoto , Fumitaka Sato
IPC分类号： H01L29/20 , H01L21/205
CPC分类号： C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/0254 , H01L21/02581 , H01L21/0262
摘要： A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate 1, such as a sapphire substrate having the (0001) plane, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus 11. Next, gaseous iron compound GFe from a source 13 for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source 15 are caused to react with each other in a mixing container 16 to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source 17, and second substance gas GGa containing elemental gallium are supplied to a reaction tube 21 to form iron-doped gallium nitride 23 on the substrate 1.
摘要翻译：提供了一种形成用于半绝缘GaN衬底的掺杂铁的氮化镓的方法。将具有（0001）面的蓝宝石衬底等基板1放置在金属有机氯化物气相装置11的基座上。接下来，使来自氯化氢源15的铁化合物诸如二茂铁和氯化氢气体的来源13的气态铁化合物G 1 Fe < 彼此混合在混合容器16中以产生含铁反应产物如氯化铁（FeCl 2）的气体G FeCl 2。与该产生相关联，来自氮源17的含铁反应产物G FeCO 2，含有元素氮的第一物质气体G N N和第二物质气体G

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