专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08309297B2 Methods of lithographically patterning a substrate 失效
标题翻译：平版印刷基板的方法
公开(公告)号：US08309297B2
公开(公告)日：2012-11-13
申请号：US11868328
申请日：2007-10-05
申请人： Yoshiki Hishiro , Scott Sills , Hiroyuki Mori , Troy Gugel , Paul D. Shirley , Lijing Gou , Adam Olson
发明人： Yoshiki Hishiro , Scott Sills , Hiroyuki Mori , Troy Gugel , Paul D. Shirley , Lijing Gou , Adam Olson
IPC分类号： G03F7/22
CPC分类号： G03F7/2022 , G03F7/203
摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.
摘要翻译：光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。预期其他实现和实施例。

2. 发明申请

US20130059255A1 Methods of Lithographically Patterning a Substrate 有权
公开(公告)号：US20130059255A1
公开(公告)日：2013-03-07
申请号：US13659790
申请日：2012-10-24
申请人： Yoshiki Hishiro , Scott Sills , Hiroyuki Mori , Troy Gugel , Paul D. Shirley , Lijing Gou , Adam Olson
发明人： Yoshiki Hishiro , Scott Sills , Hiroyuki Mori , Troy Gugel , Paul D. Shirley , Lijing Gou , Adam Olson
IPC分类号： G03F7/20
CPC分类号： G03F7/2022 , G03F7/203
摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

3. 发明授权

US08859195B2 Methods of lithographically patterning a substrate 有权
标题翻译：平版印刷基板的方法
公开(公告)号：US08859195B2
公开(公告)日：2014-10-14
申请号：US13659790
申请日：2012-10-24
申请人： Yoshiki Hishiro , Scott Sills , Hiroyuki Mori , Troy Gugel , Paul D. Shirley , Lijing Gou , Adam Olson
发明人： Yoshiki Hishiro , Scott Sills , Hiroyuki Mori , Troy Gugel , Paul D. Shirley , Lijing Gou , Adam Olson
IPC分类号： G03F7/22 , G03F7/20
CPC分类号： G03F7/2022 , G03F7/203
摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.
摘要翻译：光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。预期其他实现和实施例。

4. 发明申请

US20090092933A1 Methods of Lithographically Patterning a Substrate 失效
标题翻译：基板的光刻图案化方法
公开(公告)号：US20090092933A1
公开(公告)日：2009-04-09
申请号：US11868328
申请日：2007-10-05
申请人： Yoshiki Hishiro , Scott Sills , Hiroyuki Mori , Troy Gugel , Paul D. Shirley , Lijing Gou , Adam Olson
发明人： Yoshiki Hishiro , Scott Sills , Hiroyuki Mori , Troy Gugel , Paul D. Shirley , Lijing Gou , Adam Olson
IPC分类号： G03F7/20
CPC分类号： G03F7/2022 , G03F7/203
摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.
摘要翻译：光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。预期其他实现和实施例。

5. 发明申请

US20090226847A1 METHOD OF REDUCING PHOTORESIST DEFECTS DURING FABRICATION OF A SEMICONDUCTOR DEVICE 有权
标题翻译：在半导体器件制造过程中减少光电子缺陷的方法
公开(公告)号：US20090226847A1
公开(公告)日：2009-09-10
申请号：US12045373
申请日：2008-03-10
申请人： Yoshiki Hishiro , Lijing Gou , Scott E. Sills , Hiroyuki Mori , Paul D. Shirley , Troy V. Gugel , Adam L. Olson
发明人： Yoshiki Hishiro , Lijing Gou , Scott E. Sills , Hiroyuki Mori , Paul D. Shirley , Troy V. Gugel , Adam L. Olson
IPC分类号： H01L21/47 , G03F7/00
CPC分类号： G03F7/7065 , G03F7/423
摘要： Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.
摘要翻译：描述了在半导体器件制造期间减少或消除水印型缺陷，并且可以包括使用若干实施例之一来处理光致抗蚀剂。在一些实施例中，通过施加和去除牺牲外涂层来调节光致抗蚀剂表面来减少/消除缺陷形成的倾向。在其它实施例中，通过在显影后处理期间将光致抗蚀剂表面暴露于缺陷剥离材料来减少/消除现有缺陷。

6. 发明授权

US08163468B2 Method of reducing photoresist defects during fabrication of a semiconductor device 有权
标题翻译：在半导体器件制造期间减少光致抗蚀剂缺陷的方法
公开(公告)号：US08163468B2
公开(公告)日：2012-04-24
申请号：US12045373
申请日：2008-03-10
申请人： Yoshiki Hishiro , Lijing Gou , Scott E. Sills , Hiroyuki Mori , Paul D. Shirley , Troy V. Gugel , Adam L. Olson
发明人： Yoshiki Hishiro , Lijing Gou , Scott E. Sills , Hiroyuki Mori , Paul D. Shirley , Troy V. Gugel , Adam L. Olson
IPC分类号： G03F7/26
CPC分类号： G03F7/7065 , G03F7/423
摘要： Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.
摘要翻译：描述了在半导体器件制造期间减少或消除水印型缺陷，并且可以包括使用若干实施例之一来处理光致抗蚀剂。在一些实施例中，通过施加和去除牺牲外涂层来调节光致抗蚀剂表面来减少/消除缺陷形成的倾向。在其它实施例中，通过在显影后处理期间将光致抗蚀剂表面暴露于缺陷剥离材料来减少/消除现有缺陷。

7. 发明授权

US08797662B2 Apparatuses and devices for absorbing electromagnetic radiation, and methods of forming the apparatuses and devices 有权
标题翻译：用于吸收电磁辐射的装置和装置，以及形成装置和装置的方法
公开(公告)号：US08797662B2
公开(公告)日：2014-08-05
申请号：US12967733
申请日：2010-12-14
申请人： Yongjun Jeff Hu , Allen McTeer , Lijing Gou
发明人： Yongjun Jeff Hu , Allen McTeer , Lijing Gou
IPC分类号： G02B5/22 , G02B5/20 , B82Y20/00
CPC分类号： G02B5/201 , B82Y20/00 , G02B5/003 , Y10S977/707 , Y10S977/762 , Y10S977/773 , Y10S977/834 , Y10S977/954
摘要： Photonic nanostructures, light absorbing apparatuses, and devices are provided. The photonic nanostructures include a plurality of photonic nanobars configured to collectively absorb light over an excitation wavelength range. At least two of the photonic nanobars of the plurality have lengths that are different from one another. Each photonic nanobar of the plurality has a substantially small width and a substantially small height relative to the different lengths. A method for forming such may comprise forming a plurality of first photonic nanobars comprising a width and a height that are smaller than a length of the plurality of first photonic nanobars, and forming a plurality of second photonic nanobars comprising a width and a height that are smaller than a length of the second photonic nanobar, wherein the lengths of the plurality of first photonic nanobars and the lengths of the plurality of second photonic nanobars are different from one another.
摘要翻译：提供光子纳米结构，光吸收装置和装置。光子纳米结构包括配置成在激发波长范围内共同吸收光的多个光子纳米结构。多个光子纳米棒中的至少两个具有彼此不同的长度。多个的每个光子纳米棒相对于不同的长度具有基本上小的宽度和基本上小的高度。用于形成其的方法可以包括形成多个第一光子纳米条，其包括小于多个第一光子纳米条的长度的宽度和高度，以及形成多个第二光子纳米条，其包括宽度和高度小于第二光子纳米棒的长度，其中多个第一光子纳米棒的长度和多个第二光子纳米棒的长度彼此不同。

8. 发明授权

US08486611B2 Semiconductor constructions and methods of forming patterns 有权
标题翻译：半导体结构和形成图案的方法
公开(公告)号：US08486611B2
公开(公告)日：2013-07-16
申请号：US12836495
申请日：2010-07-14
申请人： Dan Millward , Kaveri Jain , Zishu Zhang , Lijing Gou , Anton de Villiers , Jianming Zhou , Yuan He , Michael Hyatt , Scott L. Light
发明人： Dan Millward , Kaveri Jain , Zishu Zhang , Lijing Gou , Anton de Villiers , Jianming Zhou , Yuan He , Michael Hyatt , Scott L. Light
IPC分类号： G03F7/26
CPC分类号： H01L21/76879 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L27/0207 , H01L27/105 , H01L27/1052 , H01L27/10882 , H01L27/10888
摘要： Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.
摘要翻译：一些实施例包括形成图案的方法。半导体衬底被形成为在一组导电结构之上包括电绝缘材料。跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。特征的二维阵列形成在电绝缘材料上。二维阵列跨越互连区域并跨越次级区域延伸。二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分被转移到电绝缘材料中。

9. 发明申请

US20120154919A1 APPARATUSES AND DEVICES FOR ABSORBING ELECTROMAGNETIC RADIATION, AND METHODS OF FORMING THE APPARATUSES AND DEVICES 有权
标题翻译：用于吸收电磁辐射的装置和装置，以及形成装置和装置的方法
公开(公告)号：US20120154919A1
公开(公告)日：2012-06-21
申请号：US12967733
申请日：2010-12-14
申请人： Yongjun Jeff Hu , Allen McTeer , Lijing Gou
发明人： Yongjun Jeff Hu , Allen McTeer , Lijing Gou
IPC分类号： G02B27/00 , B28B11/08 , C23F1/00 , B82Y20/00
CPC分类号： G02B5/201 , B82Y20/00 , G02B5/003 , Y10S977/707 , Y10S977/762 , Y10S977/773 , Y10S977/834 , Y10S977/954
摘要： Photonic nanostructures, light absorbing apparatuses, and devices are provided. The photonic nanostructures include a plurality of photonic nanobars configured to collectively absorb light over an excitation wavelength range. At least two of the photonic nanobars of the plurality have lengths that are different from one another. Each photonic nanobar of the plurality has a substantially small width and a substantially small height relative to the different lengths. A method for forming such may comprise forming a plurality of first photonic nanobars comprising a width and a height that are smaller than a length of the plurality of first photonic nanobars, and forming a plurality of second photonic nanobars comprising a width and a height that are smaller than a length of the second photonic nanobar, wherein the lengths of the plurality of first photonic nanobars and the lengths of the plurality of second photonic nanobars are different from one another.
摘要翻译：提供光子纳米结构，光吸收装置和装置。光子纳米结构包括配置成在激发波长范围内共同吸收光的多个光子纳米结构。多个光子纳米棒中的至少两个具有彼此不同的长度。多个的每个光子纳米棒相对于不同的长度具有基本上小的宽度和基本上小的高度。用于形成其的方法可以包括形成多个第一光子纳米条，其包括小于多个第一光子纳米条的长度的宽度和高度，以及形成多个第二光子纳米条，其包括宽度和高度小于第二光子纳米棒的长度，其中多个第一光子纳米棒的长度和多个第二光子纳米棒的长度彼此不同。

10. 发明申请

US20120038895A1 LENS HEATING COMPENSATION IN PHOTOLITHOGRAPHY 有权
标题翻译：透镜加热补偿
公开(公告)号：US20120038895A1
公开(公告)日：2012-02-16
申请号：US12857316
申请日：2010-08-16
申请人： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan Millward
发明人： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan Millward
IPC分类号： G03B27/54 , G03B27/32
CPC分类号： G03F7/70116 , G03F7/70891
摘要： Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.
摘要翻译：公开了光刻设备和方法。一种这样的设备包括光路，其被配置为在光学系统的一部分中提供第一衍射图案，并且在提供第一衍射图案之后，向光学系统的部分提供第二衍射图案。同时，一种这样的方法包括在光学系统的一部分上提供第一衍射图案，其中半导体制品使用第一衍射图案成像。第二衍射图案也提供到光学系统的部分上，但是第二衍射图案不用于对半导体制品进行成像。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式