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1. 发明申请

US20090059047A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20090059047A1
公开(公告)日：2009-03-05
申请号：US12195584
申请日：2008-08-21
申请人： Takahiko MURATA , Yoshihisa KATO , Shigetaka KASUGA , Takayoshi YAMADA
发明人： Takahiko MURATA , Yoshihisa KATO , Shigetaka KASUGA , Takayoshi YAMADA
IPC分类号： H04N5/335
CPC分类号： H04N5/37452 , H04N5/35581 , H04N5/3559
摘要： Provided is a solid-state imaging device having pixel units that are two-dimensionally arranged, and including: a photodiode that generates an optical signal charge corresponding to an intensity and an exposure time of light; a MOS transistor that transfers the optical signal charge; an accumulating unit that generates a voltage corresponding to the signal charge through the MOS transistor; a storing unit that stores a voltage corresponding to an optical signal charge in the accumulating unit; and a voltage setting unit that sets a value of a voltage in the accumulating unit to a value corresponding to the voltage in the storing unit.
摘要翻译：提供一种具有二维排列的像素单元的固态成像装置，包括：产生对应于光的强度和曝光时间的光信号电荷的光电二极管; 传输光信号电荷的MOS晶体管; 累积单元，其产生对应于通过MOS晶体管的信号电荷的电压; 存储单元，其将与所述积累单元中的光信号电荷相对应的电压存储; 以及电压设定单元，其将所述累积单元中的电压值设定为与所述存储单元中的电压对应的值。

2. 发明申请

US20120033117A1 SOLID-STATE IMAGING DEVICE AND DRIVING METHOD 有权
标题翻译：固态成像装置及驱动方法
公开(公告)号：US20120033117A1
公开(公告)日：2012-02-09
申请号：US13271466
申请日：2011-10-12
申请人： Takahiko MURATA , Takayoshi YAMADA , Yoshihisa KATO , Shigetaka KASUGA
发明人： Takahiko MURATA , Takayoshi YAMADA , Yoshihisa KATO , Shigetaka KASUGA
IPC分类号： H04N5/335 , H01L27/146
CPC分类号： H04N5/361 , H01L27/14643 , H04N5/3742 , H04N5/3745
摘要： A plurality of pixel circuits arranged in rows and columns, and each of which outputs an electric signal according to an amount of received light; a first column signal line provided for each of the columns, and for sequentially transferring the electric signals from said pixel circuits in a corresponding column; and a holding circuit provided for each of the pixel circuits in each column, and which holds the electric signal transferred through the column signal line in the corresponding column are provided. A holding circuit includes a first capacitor which holds a first electric signal of the corresponding pixel circuit in a reset state; and a second capacitor which holds a second electric signal after the corresponding pixel circuit receives light. A difference circuit calculates a difference between two electric signals held by the first capacitor and the second capacitor in a same holding circuit.
摘要翻译：多个以行和列排列的像素电路，每个像素电路根据接收的光量输出电信号; 为每个列提供的第一列信号线，并且用于从相应列中的所述像素电路顺序传送电信号; 并且提供为每列中的每个像素电路提供并保持通过相应列中的列信号线传送的电信号的保持电路。保持电路包括：第一电容器，其将相应像素电路的第一电信号保持在复位状态; 以及在相应的像素电路接收光之后保持第二电信号的第二电容器。差分电路在相同的保持电路中计算由第一电容器和第二电容器保持的两个电信号之间的差。

3. 发明申请

US20090079857A1 SOLID-STATE IMAGING DEVICE, RECEIVED-LIGHT INTENSITY MEASURING DEVICE, AND RECEIVED-LIGHT INTENSITY MEASURING METHOD 审中-公开
标题翻译：固态成像装置，接收光强度测量装置和接收光强度测量方法
公开(公告)号：US20090079857A1
公开(公告)日：2009-03-26
申请号：US12235839
申请日：2008-09-23
申请人： Yoshihisa KATO , Takahiko MURATA , Shigetaka KASUGA , Takayoshi YAMADA
发明人： Yoshihisa KATO , Takahiko MURATA , Shigetaka KASUGA , Takayoshi YAMADA
IPC分类号： H04N5/30 , G01J1/44
CPC分类号： G01J1/46 , H04N5/3742 , H04N5/378
摘要： The received-light intensity measuring device includes: a pixel circuit 1 including a photodiode (PD) that accumulates an amount of electric charges according to the intensity of received light, a floating diffusion (FD) that generates a signal voltage VCL according to an amount of retained electric charges, and a transfer switch that controls the transfer, to the FD, of the electric charges accumulated in the PD; a DAC 11 that generates a control voltage VTRAN varying in a ramp waveform and applies VTRAN to the gate of the transfer switch; a column AD conversion circuit 13 that obtains the digital value by quantizing a length of time from a first point in time set with reference to a period during which VTRAN is applied to a second point in time at which a specific fluctuation occurs in a temporal variation rate of the signal voltage VCL while VTRAN is being applied.
摘要翻译：接收光强度测量装置包括：像素电路1，其包括根据接收光的强度累积电荷量的光电二极管（PD）;根据接收光强度产生信号电压VCL的浮动扩散（FD）以及转移开关，其控制在PD中累积的电荷向FD的转移; DAC11，其产生以斜坡波形变化的控制电压VTRAN，并将VTRAN应用于转换开关的栅极; 列AD转换电路13，其通过将从参考VTRAN应用的周期的第一时间点的时间长度量化到在时间变化中发生特定波动的第二时间点来获得数字值 VTRAN被施加时信号电压VCL的速率。

4. 发明申请

US20090212985A1 SOLID-STATE IMAGING DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SIGNAL PROCESSING METHOD 有权
标题翻译：固态成像装置，半导体集成电路和信号处理方法
公开(公告)号：US20090212985A1
公开(公告)日：2009-08-27
申请号：US12388105
申请日：2009-02-18
申请人： Shigetaka KASUGA , Yoshihisa KATO , Takahiko MURATA , Takayoshi YAMADA
发明人： Shigetaka KASUGA , Yoshihisa KATO , Takahiko MURATA , Takayoshi YAMADA
IPC分类号： H03M1/12
CPC分类号： H04N5/378 , H04N5/3742
摘要： A solid-state imaging device includes: pixel circuits arranged in a matrix which perform photoelectric conversion on received light; and an AD conversion unit converting the resultant signal voltage of the photoelectric conversion. The AD conversion unit includes: a reference voltage generation unit generating plural reference voltages which are different from each other within a possible range for a signal voltage; a most significant bit conversion unit that identifies a voltage section including the signal voltage from among the voltage sections each having a corresponding one of the reference voltages as a base point and determines the identified result as the value of the most significant bit of the digital signal; and a least significant bit conversion unit that converts, into the least significant bit of the digital signal, the difference voltage between the signal voltage and the reference voltage as the base point of the identified voltage section.
摘要翻译：固态成像装置包括：以接收光进行光电转换的矩阵状的像素电路; 以及转换所得到的光电转换信号电压的AD转换单元。 AD转换单元包括：在信号电压的可能范围内产生彼此不同的多个参考电压的参考电压产生单元; 一个最高有效位转换单元，其识别包括每个具有对应的一个参考电压的电压部分中的信号电压的电压部分作为基点，并将所识别的结果确定为数字信号的最高有效位的值 ; 以及最低有效位转换单元，其将所述信号电压和所述参考电压之间的差电压转换为所述数字信号的最低有效位作为所识别的电压部分的基点。

5. 发明申请

US20080129851A1 SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM 有权
标题翻译：固态成像装置和成像系统
公开(公告)号：US20080129851A1
公开(公告)日：2008-06-05
申请号：US11946987
申请日：2007-11-29
申请人： Shigetaka KASUGA , Takumi YAMAGUCHI , Takahiko MURATA , Takayoshi YAMADA
发明人： Shigetaka KASUGA , Takumi YAMAGUCHI , Takahiko MURATA , Takayoshi YAMADA
IPC分类号： H04N5/335 , H04N5/217
CPC分类号： H04N5/335
摘要： A solid-state imaging device includes: a pixel unit which is composed of a plurality of pixel circuits arranged in a matrix, each pixel circuit outputting an analog signal by performing photoelectric conversion; an AD conversion circuit 15a provided for each of columns which sequentially converts a plurality of analog signals outputted from a plurality of ones of the pixel circuits in the column into a plurality of digital signals; a memory circuit 15b provided for each column which includes memories 32 and 33 and performs, in parallel, a process of storing each of the digital signals in one of the memories 32 and 33 and a process of outputting a digital signal stored in advance in the other; and data buses 17 connected to the memory circuit 15b in each column.
摘要翻译：固态成像装置包括：像素单元，其由以矩阵形式排列的多个像素电路组成，每个像素电路通过进行光电转换而输出模拟信号; 为从列中的多个像素电路输出的多个模拟信号依次变换为多个数字信号的各列设置的AD转换电路15a; 为包括存储器32和33的每列提供的存储器电路15b并行地执行将每个数字信号存储在存储器32和33中的一个中的处理以及预先存储的数字信号的处理另一个; 以及连接到每列的存储器电路15b的数据总线17。

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