专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08154828B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08154828B2
公开(公告)日：2012-04-10
申请号：US12500835
申请日：2009-07-10
申请人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.
摘要翻译： CPP结构中的MR元件包括由Cu制成的间隔层，包含CoFe的磁性固定层和层压以夹持间隔层的CoFe的自由层。自由层位于磁性固定层的下方。自由层在（001）晶面取向，间隔层形成并定向在自由层的（001）晶面上的（001）晶面上。因此，在MR元件的面积电阻率（AR）例如低于0.3

2. 发明申请

US20110007420A1 MAGNETORESISTIVE EFFECT ELEMENT IN CPP-TYPE STRUCTURE AND MAGNETIC DISK DEVICE 有权
标题翻译： CPP型结构和磁盘设备中的磁阻效应元件
公开(公告)号：US20110007420A1
公开(公告)日：2011-01-13
申请号：US12500835
申请日：2009-07-10
申请人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/60 , G11B5/33 , G11B5/48
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.
摘要翻译： CPP结构中的MR元件包括由Cu制成的间隔层，包含CoFe的磁性固定层和层压以夹持间隔层的CoFe的自由层。自由层位于磁性固定层的下方。自由层在（001）晶面取向，间隔层形成并定向在自由层的（001）晶面上的（001）晶面上。因此，在MR元件的面积电阻率（AR）例如低于0.3

3. 发明申请

US20090190270A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP类型和磁盘系统的磁阻效应器件
公开(公告)号：US20090190270A1
公开(公告)日：2009-07-30
申请号：US12022538
申请日：2008-01-30
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3916 , G11B5/3932 , G11B5/3967
摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.
摘要翻译：本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

4. 发明授权

US07881021B2 CPP type magnetoresistive device with biasing arrangement for ferromagnetic layers having respective magnetizations orthogonal to one another, and magnetic disk system using same 有权
标题翻译：具有用于具有彼此正交的相应磁化的铁磁层的偏置装置的CPP型磁阻器件，以及使用它们的磁盘系统
公开(公告)号：US07881021B2
公开(公告)日：2011-02-01
申请号：US12022538
申请日：2008-01-30
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita , Shinji Hara , Tomohito Mizuno , Hironobu Matsuzawa , Toshiyuki Ayukawa , Koji Shimazawa , Kiyoshi Noguchi
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3916 , G11B5/3932 , G11B5/3967
摘要： A magnetoresistive device with CPP structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer and a magnetization direction control area that extends further rearward from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer to produce magnetizations of the said first and second ferromagnetic layers which are antiparallel with each other; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions.
摘要翻译：一种具有CPP结构的磁阻器件，包括非磁性中间层，以及第一铁磁层和第二铁磁层，所述第一铁磁层和第二铁磁层层叠并形成有位于它们之间的所述非磁性中间层，其中所述第一和第二铁磁层中的每一个包括连接到所述非磁性中间层和从所述非磁性中间层的后端的位置向后延伸的磁化方向控制区域; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，以产生与所述第一和第二铁磁层反平行的所述第一和第二铁磁层的磁化彼此; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。

5. 发明授权

US08385021B2 Temperature assisted magnetic recording element having grounded near field light generator 有权
标题翻译：具有接地近场光发生器的温度辅助磁记录元件
公开(公告)号：US08385021B2
公开(公告)日：2013-02-26
申请号：US12722742
申请日：2010-03-12
申请人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya
发明人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya
IPC分类号： G11B5/31 , G11B5/02
CPC分类号： G11B5/314 , B82Y20/00 , G02B6/1226 , G11B5/3116 , G11B5/6005 , G11B5/6088 , G11B2005/0021
摘要： A plasmon generator positioned away from the substrate and extending to the air bearing surface (ABS) as facing a part of the waveguide. The plasmon generator has a propagation edge extending in a longitudinal direction. The propagation edge has an overlapping part overlapping the waveguide in the longitudinal direction, and a near field light generator positioned on the ABS and located in the vicinity of the edge part of the recording magnetic pole. The overlapping part of the propagation edge is coupled with the laser light propagating through the waveguide in a surface plasmon mode so that a surface plasmon is generated. The propagation edge propagates the surface plasmon generated in the overlapping part to the near field light generator. The magnetic recording element further has a grounding element electrically connecting the plasmon generator and the substrate.
摘要翻译：等离子体发生器远离基板定位并且面向波导的一部分延伸到空气轴承表面（ABS）。等离子体发生器具有沿纵向方向延伸的传播边缘。传播边缘具有在纵向上与波导重叠的重叠部分，以及位于ABS上且位于记录磁极的边缘部分附近的近场光发生器。传播边缘的重叠部分与以表面等离子体模式传播通过波导的激光耦合，从而产生表面等离子体激元。传播边缘将在重叠部分中产生的表面等离子体激元传播到近场光发生器。磁记录元件还具有电连接等离子体发生器和基板的接地元件。

6. 发明授权

US08345390B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08345390B2
公开(公告)日：2013-01-01
申请号：US12379625
申请日：2009-02-26
申请人： Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
发明人： Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
IPC分类号： G11B5/39
CPC分类号： G01R33/098 , B82Y25/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/10 , Y10T29/49021 , Y10T428/1114 , Y10T428/1171
摘要： An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer 40 is configured of a certain three-layer structure with certain materials, and at least one of a first ferromagnetic layer 30 and a second ferromagnetic layer 50 contains a certain amount of an element selected from the group of nitrogen (N), carbon (C), and oxygen (O).
摘要翻译：根据本发明的MR元件具有进一步提高MR比的优越效果，因为间隔层40的结构由具有某些材料的特定三层结构构成，并且第一铁磁层30和第二铁磁层50含有一定量的选自氮（N），碳（C）和氧（O）的元素。

7. 发明授权

US08331063B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08331063B2
公开(公告)日：2012-12-11
申请号：US12500907
申请日：2009-07-10
申请人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
发明人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01L43/08
摘要： An MR element in a CPP-GMR structure includes a first ferromagnetic layer, a spacer layer that is epitaxially formed on the first ferromagnetic layer, a second ferromagnetic layer that is located on the spacer layer, and that is laminated with the first ferromagnetic layer to sandwich the spacer layer. A sense current flows along a lamination direction of the first and second ferromagnetic layers. Angle of magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer relatively change due to an externally applied magnetic field.
摘要翻译： CPP-GMR结构中的MR元件包括第一铁磁层，外延形成在第一铁磁层上的间隔层，位于间隔层上的第二铁磁层，并且与第一铁磁层层压到夹住间隔层。感测电流沿着第一和第二铁磁层的层叠方向流动。第一铁磁层和第二铁磁层的磁化方向的角度由于外部施加的磁场而相对变化。

8. 发明授权

US08250737B2 Method for manufacturing head including light source unit for thermal assist 有权
标题翻译：制造头部的方法，包括用于热辅助的光源单元
公开(公告)号：US08250737B2
公开(公告)日：2012-08-28
申请号：US12904553
申请日：2010-10-14
申请人： Koji Shimazawa , Seiichi Takayama , Nobuyuki Mori , Yoshihiro Tsuchiya , Shinji Hara
发明人： Koji Shimazawa , Seiichi Takayama , Nobuyuki Mori , Yoshihiro Tsuchiya , Shinji Hara
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/314 , B82Y10/00 , B82Y25/00 , G11B5/1278 , G11B5/3967 , G11B5/6088 , G11B2005/001 , G11B2005/0021 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/5313 , Y10T29/53191
摘要： Provided is a method for manufacturing a thermally-assisted magnetic recording head including a light source unit with a light source and a slider with an optical system. The method comprises steps of: adhering by suction the light source unit with a back holding jig; moving the back holding jig, then aligning a light-emission center of the light source with a light-receiving end surface of the optical system in directions within a slider back surface of the slider; bringing the light source unit into contact with the slider back surface, with a suction surface of the back holding jig tilted from the normal to the slider back surface; applying a load to a load application surface of the unit substrate by a loading means to bring a joining surface of the light source unit into conformity with the slider back surface; and bonding the light source unit and the slider. This method can improve the conformity, thereby achieving adequately strong junction and adequately high accuracy in position.
摘要翻译：提供一种制造包括具有光源的光源单元和具有光学系统的滑块的热辅助磁记录头的方法。该方法包括以下步骤：用后保持夹具吸附光源单元; 移动后保持夹具，然后将光源的发光中心与光学系统的光接收端面沿滑块的滑块后表面内的方向对准; 使光源单元与滑块后表面接触，后保持夹具的吸力表面从滑块后表面的法线倾斜; 通过加载装置将负载施加到单元基板的负载施加表面，以使光源单元的接合表面与滑块背面一致; 并且接合光源单元和滑块。该方法可以改善一致性，从而实现足够强的接合和足够高的位置精度。

9. 发明授权

US08029853B2 Fabrication process for magnetoresistive devices of the CPP type 有权
标题翻译： CPP型磁阻器件的制造工艺
公开(公告)号：US08029853B2
公开(公告)日：2011-10-04
申请号：US12292566
申请日：2008-11-20
申请人： Hironobu Matsuzawa , Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara
发明人： Hironobu Matsuzawa , Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara
IPC分类号： B05D5/12
CPC分类号： G11B5/3163 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F41/307 , H01L43/12
摘要： The inventive fabrication process for magnetoresistive devices (CPP-GMR devices) involves the formation of a zinc oxide or ZnO layer that provides the intermediate layer of a spacer layer, comprising Zn film formation operation for forming a zinc or Zn layer and Zn film oxidization operation for oxidizing the zinc film after the Zn film formation operation. The Zn film formation operation is implemented such that after a multilayer substrate having a multilayer structure before the formation of the Zn film is cooled down to the temperature range of −140° C. to −60° C., the formation of the Zn film is set off, and the Zn film oxidization operation is implemented such that after the completion of the Zn film oxidization operation, oxidization treatment is set off at the substrate temperature range of −120° C. to −40° C. Thus, excelling in both flatness and crystallizability, the ZnO layer makes sure the device has high MR ratios, and can further have an area resistivity AR best suited for the device.
摘要翻译：用于磁阻器件（CPP-GMR器件）的本发明制造方法涉及形成提供间隔层的中间层的氧化锌或ZnO层，其包括用于形成锌或Zn层的Zn膜形成操作和Zn膜氧化操作用于在Zn膜形成操作之后氧化锌膜。实施Zn膜形成操作，使得在形成Zn膜之前具有多层结构的多层基板被冷却至-140℃至-60℃的温度范围，形成Zn膜并且进行Zn膜氧化操作，使得在Zn膜氧化操作完成之后，在-120℃至-40℃的衬底温度范围内，氧化处理被降低。因此，优异的平坦度和结晶性，ZnO层确保器件具有高MR比，并且还可以具有最适合于器件的面积电阻率AR。

10. 发明授权

US07920362B2 Magnetio-resistive device including a multi-layer spacer which includes a semiconductor oxide layer 有权
标题翻译：磁阻器件包括包括半导体氧化物层的多层间隔物
公开(公告)号：US07920362B2
公开(公告)日：2011-04-05
申请号：US11943171
申请日：2007-11-20
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G11B5/59683
摘要： A giant magneto-resistive effect device having a CPP structure including a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them. The free layer functions such that its magnetization direction changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material. A semiconductor oxide layer is interposed between them. The semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient.
摘要翻译：具有包括间隔层的CPP结构的巨磁阻效应器件，以及彼此层叠的所述间隔层的固定磁化层和自由层。自由层的功能使得其磁化方向根据外部磁场而变化。间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层。在它们之间插入半导体氧化物层。形成间隔层的一部分的半导体氧化物层包含氧化锌作为主要成分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式