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    • 5. 发明申请
    • SEMICONDUCTOR LASER ELEMENT AND METHOD OF FABRICATION THEREOF
    • 半导体激光元件及其制造方法
    • US20070091956A1
    • 2007-04-26
    • US11567523
    • 2006-12-06
    • Yoshifumi Sato
    • Yoshifumi Sato
    • H01S5/00
    • B82Y20/00H01S5/209H01S5/2231H01S5/3215H01S5/3432
    • A semiconductor laser element having an advantageous vertical light confinement efficiency, a low threshold current and a low element resistance is provided. The semiconductor laser element has a substrate and a stacked structure formed thereon, where the stacked structure comprises a buffer layer, an n-Al0.6Ga0.4As cladding layer, an n-Al0.47Ga0.53As cladding layer, an active layer, a p-Al0.47Ga0.53As first cladding layer, an Al0.55Ga0.45As etching stop layer, a p-Al0.47Ga0.53As second cladding layer, a p-Al0.6Ga0.4As third cladding layer, and a p-GaAs contact layer. The second and third cladding layers, and the contact layer are formed as a stripe-patterned ridge, and serve as a current injection regions. Both lateral portions of the ridge are filled with an n-type current blocking layer and serve as non-current-injection regions. Because the cladding layers on the active-layer-section side have a refractive index larger than that of the cladding layers disposed outward thereof, light leaked from the active layer section can efficiently be confined within the cladding layers on the active-layer-section side.
    • 提供了具有有利的垂直光限制效率,低阈值电流和低元件电阻的半导体激光元件。 半导体激光元件具有形成在其上的基板和堆叠结构,其中层叠结构包括缓冲层,n-Al 0.6 Ga 0.4 As As包层,n -Al 0.47 Ga 0.53 As As包层,有源层,p-Al 0.47 Ga 0.53首先 作为蚀刻停止层的p-Al 0.47 Ga 0.53 As As 包层,p-Al 0.6 Ga 0.4 As As第三包层和p-GaAs接触层。 第二和第三包覆层和接触层形成为条纹图案化的脊,并且用作电流注入区域。 脊的两个侧面部分填充有n型电流阻挡层,并且用作非电流注入区域。 由于有源层部分侧的包覆层的折射率大于设置在其外侧的包层的折射率,因此从有源层部分漏出的光可有效地限制在有源层部分侧的包层内 。
    • 8. 发明申请
    • Process for producing 5-iodo-2-methylbenzoic acid
    • 5-碘-2-甲基苯甲酸的制备方法
    • US20060167312A1
    • 2006-07-27
    • US10563088
    • 2004-07-01
    • Takafumi YoshimuraToshio HidakaYoshifumi SatoNorio FushimiKazuhiro Yamada
    • Takafumi YoshimuraToshio HidakaYoshifumi SatoNorio FushimiKazuhiro Yamada
    • C07C63/04
    • C07C51/363C07C63/70
    • The present invention provides a process for producing 5-iodo-2-methylbenzoic acid through iodination of 2-methylbenzoic acid, the process including, as essential steps, a reaction step of iodinating 2-methylbenzoic acid in the presence of a microporous compound, iodine, an oxidizing agent, and acetic anhydride, and a purification step including sublimation, distillation, crystallization, or a combination of two or more of these. According to the present invention, 5-iodo-2-methylbenzoic acid, which is useful for producing functional chemicals such as drugs, can be produced at high purity and high yield in a simple manner. Since the production process includes a simple reaction step and a simple separation/purification step, the load of purification is mitigated. In addition, the microporous compound such as a zeolite catalyst which has been separated and recovered from the reaction mixture can be repeatedly employed after performing of a simple treatment. Thus, the production process ensures a long service life of catalysts and high efficiency.
    • 本发明提供了通过2-甲基苯甲酸碘化生产5-碘-2-甲基苯甲酸的方法,该方法包括作为必要步骤的步骤,在微孔化合物存在下碘化2-甲基苯甲酸,碘 ,氧化剂和乙酸酐,以及包括升华,蒸馏,结晶或这些中的两种或更多种的组合的纯化步骤。 根据本发明,可以以高纯度和高产率以简单的方式制备可用于制备功能性化学物质如药物的5-碘-2-甲基苯甲酸。 由于生产过程包括简单的反应步骤和简单的分离/纯化步骤,减轻了纯化负荷。 此外,在进行简单处理之后,可以重复使用从反应混合物中分离回收的微孔化合物如沸石催化剂。 因此,生产过程确保催化剂的使用寿命长,效率高。