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1. 发明授权

US5755879A Methods for manufacturing substrates to form monocrystalline diamond films by chemical vapor deposition 失效
标题翻译：通过化学气相沉积制造衬底以形成单晶金刚石膜的方法
公开(公告)号：US5755879A
公开(公告)日：1998-05-26
申请号：US560078
申请日：1995-11-17
申请人： Yoshihiro Shintani , Takeshi Tachibana , Kozo Nishimura , Koichi Miyata , Yoshihiro Yokota , Koji Kobashi
发明人： Yoshihiro Shintani , Takeshi Tachibana , Kozo Nishimura , Koichi Miyata , Yoshihiro Yokota , Koji Kobashi
IPC分类号： C30B29/04 , C23C16/02 , C23C16/27 , C30B25/02 , H01L31/10 , H03H3/08 , C30B29/20
CPC分类号： C23C16/274 , C23C16/0209 , C23C16/0254 , C30B25/02 , C30B29/04
摘要： A method is presented to manufacture substrates for growing monocrystalline diamond films by chemical vapor deposition (CVD) on large area at low cost. The substrate materials are either Pt or its alloys, which have been subject to a single or multiple cycle of cleaning, roller press, and high temperature annealing processes to make the thickness of the substrate materials to 0.5 mm or less, or most preferably to 0.2 mm or less, so that either (111) crystal surfaces or inclined crystal surfaces with angular deviations within .+-.10 degrees from (111), or both, appear on the entire surfaces or at least part of the surfaces of the substrates. The annealing is carried out at a temperature above 800.degree. C. The present invention will make it possible to markedly improve various characteristics of diamond films, and hence put them into practical use.
摘要翻译：提出了一种制造用于通过化学气相沉积（CVD）在大面积上以低成本生长单晶金刚石膜的衬底的方法。衬底材料是Pt或其合金，其已经经历单次或多次清洁循环，辊压机和高温退火工艺，以使衬底材料的厚度为0.5mm或更小，或最优选为0.2 （111）或两者的角度偏差的（111）晶面或倾斜晶体表面出现在基板的整个表面或至少部分表面上。退火在高于800℃的温度下进行。本发明将可以显着改善金刚石膜的各种特性，从而将其投入实际应用中。

2. 发明授权

US5814149A Methods for manufacturing monocrystalline diamond films 失效
标题翻译：制造单晶金刚石薄膜的方法
公开(公告)号：US5814149A
公开(公告)日：1998-09-29
申请号：US560077
申请日：1995-11-17
申请人： Yoshihiro Shintani , Takeshi Tachibana , Kozo Nishimura , Koichi Miyata , Yoshihiro Yokota , Koji Kobashi
发明人： Yoshihiro Shintani , Takeshi Tachibana , Kozo Nishimura , Koichi Miyata , Yoshihiro Yokota , Koji Kobashi
IPC分类号： C30B29/04 , C23C16/02 , C23C16/26 , C23C16/27 , C30B25/02
CPC分类号： C23C16/271 , C23C16/0263 , C23C16/0281 , C23C16/272 , C23C16/274 , C23C16/275 , C30B25/02 , C30B29/04
摘要： A method is related to grow monocrystalline diamond films by chemical vapor deposition on large area at low cost. The substrate materials are either bulk single crystals of Pt or its alloys, or thin films of those materials deposited on suitable supporting materials. The surfaces of those substrates must be either (111) or (001), or must have domain structures consisting of (111) or (001) crystal surfaces. Those surfaces can be inclined within .+-.10 degree angles from (111) or (001). In order to increase the nucleation density of diamond, the substrate surface can be scratched by buff and/or ultrasonic polishing, or carbon implanted. Monocrystalline diamond films can be grown even though the substrate surfaces have been roughened. Plasma cleaning of substrate surfaces and annealing of Pt or its alloy films are effective in growing high quality monocrystalline diamond films.
摘要翻译：一种方法涉及通过化学气相沉积在大面积上以低成本生长单晶金刚石膜。衬底材料是Pt或其合金的块状单晶，或者是沉积在合适的支撑材料上的那些材料的薄膜。这些基材的表面必须是（111）或（001），或者必须具有由（111）或（001）晶体表面组成的畴结构。那些表面可以从（111）或（001）的+/- 10度角倾斜。为了增加金刚石的成核密度，可以通过抛光和/或超声波抛光或植入碳来划伤基底表面。即使衬底表面被粗糙化，也可以生长单晶金刚石膜。衬底表面的等离子体清洗和Pt或其合金膜的退火在生长高品质单晶金刚石膜方面是有效的。

3. 发明授权

US5523160A Highly-oriented diamond film 失效
标题翻译：高度定向的金刚石薄膜
公开(公告)号：US5523160A
公开(公告)日：1996-06-04
申请号：US466922
申请日：1995-06-06
申请人： Koji Kobashi , Kozo Nishimura , Koichi Miyata , Takeshi Tachibana , Brian R. Stoner
发明人： Koji Kobashi , Kozo Nishimura , Koichi Miyata , Takeshi Tachibana , Brian R. Stoner
IPC分类号： C30B25/02 , C30B29/04 , H01L21/205 , H01L29/04 , H01L29/16 , H01L41/08
CPC分类号： H01L29/1602 , H01L21/02381 , H01L21/02527 , H01L21/02573 , H01L21/02595 , H01L21/02609 , H01L21/0262 , H01L29/045 , Y10T428/24744 , Y10T428/30
摘要： The highly-oriented diamond film is a diamond film formed by chemical vapor deposition, with at least 95% of its area consisting of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} between the adjacent crystals satisfying (.vertline..DELTA..alpha..vertline..ltoreq.1.degree., .vertline..DELTA..beta..vertline..ltoreq.1.degree. and .vertline..DELTA..gamma..vertline..ltoreq.1.degree.) simultaneously. Thus obtained highly-oriented diamond film has few grain boundaries and high carrier mobility. And the area of the diamond film can be large.
摘要翻译：高度取向的金刚石膜是通过化学气相沉积形成的金刚石膜，其面积的至少95％由（100）或（111）晶面组成，并且差异{DELTAα，DELTAβ，DELTAγ} 的相邻晶体之间的欧拉角{α，β，γ}同时满足（| DELTAα|

4. 发明授权

US6080378A Diamond films and methods for manufacturing diamond films 失效
标题翻译：金刚石薄膜和制造金刚石薄膜的方法
公开(公告)号：US6080378A
公开(公告)日：2000-06-27
申请号：US924701
申请日：1997-09-05
申请人： Yoshihiro Yokota , Takeshi Tachibana , Koichi Miyata , Koji Kobashi
发明人： Yoshihiro Yokota , Takeshi Tachibana , Koichi Miyata , Koji Kobashi
IPC分类号： C30B29/04 , C23C16/27 , C30B25/10
CPC分类号： C23C16/274 , C23C16/278 , C30B25/105
摘要： Diamond films and novel method to grow the diamond films can improve the performance of products utilizing diamond films. In the cathodoluminescence taken at room temperature, the integrated intensity ratio of the diamond films, CL.sub.1 /CL.sub.2, is equal or greater than 1/20, where CL.sub.1 is the integrated intensity of the emission band in the wavelength region shorter than 300 nm while CL.sub.2 is the integrated intensity of the emission band in the wavelength region from 300 nm to 800 nm. Such high quality diamond films with intensive coalescence on the surface can be obtained by deposition on the substrates or films, made of at least one member selected from the group consisting of platinum, platinum alloys, iridium, iridium alloys, nickel, nickel alloys, silicon, and metal silicides.
摘要翻译：金刚石薄膜和金刚石薄膜生长的新方法可以改善利用金刚石薄膜的产品的性能。在室温下的阴极发光中，金刚石膜CL1 / CL2的积分强度比等于或大于1/20，其中CL1是短于300nm的波长区域中的发射带的积分强度，而CL2 是从300nm到800nm的波长区域的发射带的积分强度。通过沉积在由铂，铂合金，铱，铱合金，镍，镍合金，硅中的至少一种构成的基板或膜上，可以获得在表面上具有强烈聚结的这种高品质金刚石膜，和金属硅化物。

5. 发明授权

US5863324A Process for producing single crystal diamond film 失效
标题翻译：生产单晶金刚石薄膜的工艺
公开(公告)号：US5863324A
公开(公告)日：1999-01-26
申请号：US678683
申请日：1996-07-11
申请人： Koji Kobashi , Takeshi Tachibana , Yoshihiro Shintani
发明人： Koji Kobashi , Takeshi Tachibana , Yoshihiro Shintani
IPC分类号： C30B29/04 , C23C16/27 , C30B25/02 , G02B1/02 , H01L21/20
CPC分类号： G02B1/10 , C30B25/02 , C30B29/04 , G02B1/02 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02491 , H01L21/02527 , H01L21/02573 , H01L21/0262 , H01L21/02658
摘要： Provided is a process for economically producing single crystal diamond film with a large surface area by gas-phase synthesis. The process comprises depositing platinum film or platinum alloy film containing more than 50 atomic % of platinum on a basal substrate with (111) or (001) surface while keeping the substrate temperature at 300.degree. C. or above, annealing the platinum or platinum alloy film at 1000.degree. C. or above, and performing the gas-phase synthesis of diamond using said platinum or platinum alloy film as the substrate.
摘要翻译：提供了通过气相合成经济地生产具有大表面积的单晶金刚石膜的方法。该方法包括在基底（111）或（001）表面上沉积含有多于50原子％的铂的铂膜或铂合金膜，同时保持衬底温度在300℃或更高，退火铂或铂合金在1000℃以上的膜，使用所述铂或铂合金膜作为基材进行金相的气相合成。

6. 发明申请

US20100219350A1 Beam Detector and Beam Monitor Using The Same 审中-公开
标题翻译：光束检测器和使用它的光束监视器
公开(公告)号：US20100219350A1
公开(公告)日：2010-09-02
申请号：US12223074
申请日：2007-02-27
申请人： Koji Kobashi , Takeshi Tachibana , Yoshihiro Yokota , Kazushi Hayashi
发明人： Koji Kobashi , Takeshi Tachibana , Yoshihiro Yokota , Kazushi Hayashi
IPC分类号： G01T1/202 , C09K11/65
CPC分类号： G01T1/29 , C23C16/0254 , C23C16/274 , C23C16/277
摘要： A beam detector and a beam monitor using the same are provided, the beam detector being capable of precisely and stably detecting, for a long period of time, the position, the intensity distribution, and the change with time of radiation beams, soft x-ray beams, and the like and being manufactured at a low cost as compared to that of a conventional detection device.In a beam detector 2 for detecting the position and intensity of beams, a beam irradiation portion 6 to be irradiated with beams 7 is formed of a polycrystalline diamond (C) film 4 containing at least one element (X) selected from the group consisting of silicon (Si), nitrogen (N), lithium (Li), beryllium (Be), boron (B), phosphorus (P), sulfur (S), nickel (Ni), and vanadium (V) at an X/C of 0.1 to 1,000 ppm, and this polycrystalline diamond film 4 has a light emission function of performing light emissions 8 and 8a when it is irradiated with the beams 7. By the beam detector 2 as described above and light emission observation means 3 and 3a for observing the above light emission phenomenon, a beam monitor 1 is formed.
摘要翻译：提供了一种使用其的光束检测器和光束监视器，该光束检测器能够长时间精确而稳定地检测位置，强度分布以及辐射束随时间的变化，射线束等，并且与传统的检测装置相比以低成本制造。在用于检测光束的位置和强度的光束检测器2中，用光束7照射的光束照射部分6由多晶金刚石（C）膜4形成，该多晶金刚石（C）膜4包含至少一种选自以下的元素（X）：在X / C下，硅（Si），氮（N），锂（Li），铍（Be），硼（B），磷（P），硫（S），镍（Ni）和钒为0.1〜1000ppm，并且该多晶金刚石膜4具有在用光束7照射时进行发光8和8a的发光功能。通过如上所述的光束检测器2和发光观察装置3和3a，观察上述发光现象，形成光束监视器1。

7. 发明授权

US07285479B2 Semiconductor device and method for manufacturing multilayered substrate for semiconductor device 有权
标题翻译：半导体装置用多晶半导体装置及其制造方法
公开(公告)号：US07285479B2
公开(公告)日：2007-10-23
申请号：US11328162
申请日：2006-01-10
申请人： Takeshi Tachibana , Kazushi Hayashi , Yoshihiro Yokota , Koji Kobashi , Takashi Kobori
发明人： Takeshi Tachibana , Kazushi Hayashi , Yoshihiro Yokota , Koji Kobashi , Takashi Kobori
IPC分类号： H01L21/78 , H01L21/301 , H01L21/46
CPC分类号： H01L21/022 , C23C16/01 , C23C16/274 , C23C16/278 , C23C16/56 , H01L21/02115 , H01L21/02123 , H01L21/0405 , H01L21/3146 , H01L21/76256 , H01L2221/68363
摘要： A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiO2 layer is formed on this diamond layer. A SiO2 layer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiO2 layers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.
摘要翻译：提供一种半导体装置用多层基板的制造方法以及半导体装置，该多层基板具有优异的导热性和优异的散热效果，而不发生翘曲变形。通过CVD方法通过气相沉积在第一硅衬底的一个主表面上形成金刚石层。在该金刚石层上形成SiO 2层。通过热氧化法在第二硅衬底的表面上形成SiO 2层。金刚石层与设置在金刚石层和第二硅衬底之间的SiO 2层结合到第二硅衬底。通过蚀刻溶解去除第一硅衬底以暴露金刚石层的表面。通过CVD法在金刚石层上形成用作半导体层的硅层。

8. 发明申请

US20060112874A1 Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film 有权
标题翻译：高取向金刚石膜，其制造方法以及具有高取向金刚石膜的电子器件
公开(公告)号：US20060112874A1
公开(公告)日：2006-06-01
申请号：US11281607
申请日：2005-11-18
申请人： Yoshihiro Yokota , Kazushi Hayashi , Takeshi Tachibana , Koji Kobashi
发明人： Yoshihiro Yokota , Kazushi Hayashi , Takeshi Tachibana , Koji Kobashi
IPC分类号： C30B25/00 , C30B23/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/04 , C23C16/0272 , C23C16/274 , C23C16/277 , C23C16/279 , C30B25/105 , H01L29/045 , H01L29/1602 , Y10T428/30
摘要： A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]−[O])/[CH3+H2+O2] is −0.2×10−2 or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750° C. and 1000° C.
摘要翻译：具有平坦表面但不具有表面未取向晶体的高取向金刚石薄膜可以通过使用气相色谱法（CVD）在金刚石晶体的{111}扇形生长之后，在基底上沉积第一金刚石层来提供甲烷和氢气的混合物作为材料气体，然后通过使用甲烷，氢气和氧气的气体混合物的等离子体CVD方法通过{100}金刚石晶体的扇形生长在第一金刚石层上沉积第二金刚石层作为原料气体材料气体压力为133hPa以上的条件; 确定材料气体组成使得（[C] - [O]）/ [CH 3/3 + H 2 + O 2]是 -0.2×10 -2以上，[O] / [C]为1.2以下。并且衬底温度在750℃和1000℃之间。

9. 发明授权

US07067903B2 Heat spreader and semiconductor device and package using the same 失效
标题翻译：散热器和半导体器件和封装使用相同
公开(公告)号：US07067903B2
公开(公告)日：2006-06-27
申请号：US10701499
申请日：2003-11-06
申请人： Takeshi Tachibana , Kazushi Hayashi , Kenichi Inoue , Yoshihiro Yokota , Koji Kobashi , Nobuyuki Kawakami , Takashi Kobori
发明人： Takeshi Tachibana , Kazushi Hayashi , Kenichi Inoue , Yoshihiro Yokota , Koji Kobashi , Nobuyuki Kawakami , Takashi Kobori
IPC分类号： H01L29/06 , H01L23/495 , H01L23/06 , H01L23/10
CPC分类号： H01L23/3732 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.
摘要翻译：半导体器件和封装具有直接设置在半导体器件的反面上的散热器。该散热器包括金刚石层或含有金刚石和陶瓷的层，例如碳化硅和氮化铝。散热器直接形成在用于半导体器件的衬底上。特别地，散热器由金刚石层和一个或两个金属或陶瓷构件组成，其通过一个或两个聚合物粘合剂层结合到金刚石层。该金刚石层具有穿过厚度或微晶结构的纤维结构。在金刚石层的面向一个或两个金属或陶瓷构件的表面上形成纤毛。

10. 发明授权

US07311977B2 Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film 有权
标题翻译：高取向金刚石膜，其制造方法以及具有高取向金刚石膜的电子器件
公开(公告)号：US07311977B2
公开(公告)日：2007-12-25
申请号：US11281607
申请日：2005-11-18
申请人： Yoshihiro Yokota , Kazushi Hayashi , Takeshi Tachibana , Koji Kobashi
发明人： Yoshihiro Yokota , Kazushi Hayashi , Takeshi Tachibana , Koji Kobashi
IPC分类号： B32B9/04 , B32B13/04
CPC分类号： C30B29/04 , C23C16/0272 , C23C16/274 , C23C16/277 , C23C16/279 , C30B25/105 , H01L29/045 , H01L29/1602 , Y10T428/30
摘要： A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]−[O])/[CH3+H2+O2] is −0.2×10−2 or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750° C. and 1000° C.
摘要翻译：具有平坦表面但不具有表面未取向晶体的高取向金刚石薄膜可以通过使用气相色谱法（CVD）在金刚石晶体的{111}扇形生长之后，在基底上沉积第一金刚石层来提供甲烷和氢气的混合物作为材料气体，然后通过使用甲烷，氢气和氧气的气体混合物的等离子体CVD方法通过{100}金刚石晶体的扇形生长在第一金刚石层上沉积第二金刚石层作为原料气体材料气体压力为133hPa以上的条件; 确定材料气体组成使得（[C] - [O]）/ [CH 3/3 + H 2 + O 2]是 -0.2×10 -2以上，[O] / [C]为1.2以下。并且衬底温度在750℃和1000℃之间。

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