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1. 发明授权

US06929959B2 Manufacturing method of CPP type magnetic sensor having current-squeezing path 失效
标题翻译：具有电流挤压路径的CPP型磁传感器的制造方法
公开(公告)号：US06929959B2
公开(公告)日：2005-08-16
申请号：US10828120
申请日：2004-04-20
申请人： Yoshihiro Nishiyama , Masamichi Saito , Daigo Aoki
发明人： Yoshihiro Nishiyama , Masamichi Saito , Daigo Aoki
IPC分类号： G11B5/39 , H01L43/08 , H01L43/12 , H01L21/00
CPC分类号： G11B5/3912 , G11B5/3932 , Y10S438/945 , Y10S438/95
摘要： On a multilayer film formed on a lower electrode layer, a resist layer having cutaway parts at a lower portion is formed, and on parts of the upper surface of the multilayer film which are not overlapped with the resist layer except for areas inside the cutaway parts, first gap layers are formed. Accordingly, a predetermined gap T1 can be formed between the first gap layers in the track width direction. Next, in the following step, two end surfaces of the multilayer film and the first gap layers in the track width direction are milled. Hence, according to the present invention, compared to the case in the past, the predetermined gap T1 provided between the first gap layers can be formed into a minute size with superior accuracy, the current path-squeezing structure can be easily formed, and a magnetic sensor having superior change in resistance (ΔR) and reproduction output can be manufactured.
摘要翻译：在形成在下电极层上的多层膜上，形成在下部具有切口部的抗蚀剂层，并且在多层膜的与上述抗蚀剂层重叠的上表面的除上述切除部之外的区域的部分形成第一间隙层。因此，可以在轨道宽度方向上的第一间隙层之间形成预定间隙T1。接下来，在后续步骤中，研磨多层膜的两个端面和轨道宽度方向上的第一间隙层。因此，根据本发明，与过去的情况相比，设置在第一间隙层之间的预定间隙T 1可以以高精度形成为微小尺寸，可以容易地形成电流路径挤压结构，以及可以制造具有优异的电阻变化（DeltaR）和再现输出的磁传感器。

2. 发明授权

US08519704B2 Magnetic-balance-system current sensor 有权
标题翻译：磁平衡系统电流传感器
公开(公告)号：US08519704B2
公开(公告)日：2013-08-27
申请号：US13300076
申请日：2011-11-18
申请人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Tsuyoshi Nojima , Shigenobu Miyajima , Naoki Sakatsume , Kenji Ichinohe , Yoshihiro Nishiyama , Tatsuya Kogure , Hidekazu Kobayashi , Masahiro Iizuka
发明人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Tsuyoshi Nojima , Shigenobu Miyajima , Naoki Sakatsume , Kenji Ichinohe , Yoshihiro Nishiyama , Tatsuya Kogure , Hidekazu Kobayashi , Masahiro Iizuka
IPC分类号： G01R33/09
CPC分类号： G01R15/205 , B82Y25/00 , G01R33/093
摘要： A magnetic-balance-system current sensor includes: a magnetoresistive element, a resistance value of the magnetoresistive element being changed by applying an induction magnetic field generated by a measurement target current; magnetic cores disposed near the magnetoresistive element; a feedback coil disposed near the magnetoresistive element and configured to generate a cancelling magnetic field that cancels out the induction magnetic field; and a magnetic-field detecting bridge circuit having two outputs. The measurement target current is measured on the basis of a current flowing through the feedback coil when the induction magnetic field and the induction magnetic field and the cancelling magnetic field cancel each other out. The feedback coil, the magnetic cores, and the magnetic-field detecting bridge circuit are formed on a same substrate. The feedback coil is of a spiral type, and the magnetic cores are provided above and below the feedback coil.
摘要翻译：磁平衡系统电流传感器包括：磁阻元件，通过施加由测量目标电流产生的感应磁场来改变磁阻元件的电阻值; 设置在磁阻元件附近的磁芯; 设置在磁阻元件附近并被配置为产生抵消感应磁场的消除磁场的反馈线圈; 以及具有两个输出的磁场检测桥接电路。当感应磁场和感应磁场和消除磁场相互抵消时，基于流过反馈线圈的电流来测量测量目标电流。反馈线圈，磁芯和磁场检测桥式电路形成在同一基板上。反馈线圈是螺旋型的，并且磁芯设置在反馈线圈的上方和下方。

3. 发明授权

US08437107B2 Magnetic coupling type isolator 有权
标题翻译：磁耦合型隔离器
公开(公告)号：US08437107B2
公开(公告)日：2013-05-07
申请号：US12754509
申请日：2010-04-05
申请人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Tsuyoshi Nojima , Yoshihiro Nishiyama , Hidekazu Kobayashi , Kenji Ichinohe , Naoki Sakatsume
发明人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Tsuyoshi Nojima , Yoshihiro Nishiyama , Hidekazu Kobayashi , Kenji Ichinohe , Naoki Sakatsume
IPC分类号： G11B5/39
CPC分类号： G01R33/098
摘要： A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; and first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view, wherein a distance between the magnetoresistive element and the second shield film is set to 8 to 100 μm.
摘要翻译：磁耦合型隔离器包括：用于通过输入信号产生外部磁场的磁场发生器; 磁阻元件，用于检测外部磁场并将检测到的磁场转换成电信号，磁阻元件与磁场发生器电绝缘并且位于能够被磁耦合的位置以与磁场重叠发电机，如俯视图; 以及第一和第二屏蔽膜，如俯视图所示，与磁场发生器和磁阻元件重叠，其中磁阻元件和第二屏蔽膜之间的距离设定为8至100μm。

4. 发明授权

US08410893B2 Magnetic detector and method for manufacturing the same 有权
标题翻译：磁性探测器及其制造方法
公开(公告)号：US08410893B2
公开(公告)日：2013-04-02
申请号：US13439782
申请日：2012-04-04
申请人： Hideaki Kawasaki , Masamichi Saito , Yoshihiro Nishiyama , Kenji Ichinohe , Yosuke Ide
发明人： Hideaki Kawasaki , Masamichi Saito , Yoshihiro Nishiyama , Kenji Ichinohe , Yosuke Ide
IPC分类号： H01L43/00
CPC分类号： H01L43/02 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01L43/08 , Y10T29/4902
摘要： A first short-circuit layer and a second short-circuit layer are electrically connected to and integrally stacked onto only a first magnetoresistance effect element layer and a first resistance element layer, respectively, so as to achieve short-circuiting, and thereby adjusting electrical resistances of the first magnetoresistance effect element layer and the first resistance element layer.
摘要翻译：第一短路层和第二短路层分别与第一磁阻效应元件层和第一电阻元件层电连接并整体堆叠，以实现短路，从而调整电阻的第一磁阻效应元件层和第一电阻元件层。

5. 发明授权

US08222769B2 Magnetic coupling type isolator 有权
标题翻译：磁耦合型隔离器
公开(公告)号：US08222769B2
公开(公告)日：2012-07-17
申请号：US12754529
申请日：2010-04-05
申请人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Tsuyoshi Nojima , Yoshihiro Nishiyama , Hidekazu Kobayashi , Kenji Ichinohe , Naoki Sakatsume
发明人： Yosuke Ide , Masamichi Saito , Akira Takahashi , Tsuyoshi Nojima , Yoshihiro Nishiyama , Hidekazu Kobayashi , Kenji Ichinohe , Naoki Sakatsume
IPC分类号： H04B3/00 , H01F27/30 , H01L29/82
CPC分类号： G01R33/098
摘要： A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view; and a third shield film disposed to surround the magnetoresistive element.
摘要翻译：磁耦合型隔离器包括：用于通过输入信号产生外部磁场的磁场发生器; 磁阻元件，用于检测外部磁场并将检测到的磁场转换成电信号，磁阻元件与磁场发生器电绝缘并且位于能够被磁耦合的位置以与磁场重叠发电机，如俯视图; 第一和第二屏蔽膜与磁场发生器和磁阻元件重叠，如俯视图所示; 以及设置成围绕所述磁阻元件的第三屏蔽膜。

6. 发明申请

US20090316308A1 SELF-PINNED CPP GIANT MAGNETORESISTIVE HEAD WITH ANTIFERROMAGNETIC FILM ABSENT FROM CURRENT PATH 有权
标题翻译：具有抗静电膜的自封闭CPP巨磁电阻头从电流路径
公开(公告)号：US20090316308A1
公开(公告)日：2009-12-24
申请号：US12548982
申请日：2009-08-27
申请人： Masamichi Saito , Yoshihiro Nishiyama , Yosuke Ide , Eiji Umetsu , Naoya Hasegawa , Yasuo Hayakawa
发明人： Masamichi Saito , Yoshihiro Nishiyama , Yosuke Ide , Eiji Umetsu , Naoya Hasegawa , Yasuo Hayakawa
IPC分类号： G11B5/127
CPC分类号： G11B5/3903 , G11B5/3163 , G11B5/398
摘要： A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.
摘要翻译： CPP巨磁阻头包括下屏蔽层和上屏蔽层，以及设置在上屏蔽层和下屏蔽层之间的巨磁阻元件，包括固定磁性层，自由磁性层和设置在被钉扎的磁性层和自由磁性层之间的非磁性层层。在CPP巨磁阻磁头中，被钉扎的磁性层在高度方向上延伸到非磁性层的后部和自由磁性层，并且被钉扎的磁性层在高度方向上的尺寸大于轨道宽度方向上的尺寸。此外，钉扎磁性层包括具有正的磁致伸缩常数的磁性材料或具有高矫顽力的磁性材料，并且被钉扎的磁性层的端部在面向记录介质的表面上暴露。

7. 发明申请

US20080158738A1 TUNNELING MAGNETIC SENSING ELEMENT INCLUDING NON-MAGNETIC METAL LAYER BETWEEN MAGNETIC LAYERS 有权
标题翻译：隧道磁感应元件，包括磁性层之间的非磁性金属层
公开(公告)号：US20080158738A1
公开(公告)日：2008-07-03
申请号：US11671756
申请日：2007-02-06
申请人： Ryo Nakabayashi , Kazumasa Nishimura , Yosuke Ide , Yoshihiro Nishiyama , Hidekazu Kobayashi , Masamichi Saito , Naoya Hasegawa
发明人： Ryo Nakabayashi , Kazumasa Nishimura , Yosuke Ide , Yoshihiro Nishiyama , Hidekazu Kobayashi , Masamichi Saito , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/302 , H01L43/08
摘要： A first pinned magnetic sublayer 4a has a multilayered structure including a first insertion subsublayer disposed between a lower ferromagnetic subsublayer and an upper ferromagnetic subsublayer. The first insertion subsublayer has an average thickness exceeding 3 Å and 6 Å or less. This results in an interlayer coupling magnetic field Hin lower than a known art while RA and the rate of resistance change (ΔR/R) substantially identical to those of the known structure are maintained.
摘要翻译：第一固定磁性子层4a具有多层结构，其包括设置在下铁磁共晶层与上部铁磁层之间的第一插入层。第一个插入次层具有超过3埃和6埃或更小的平均厚度。这导致层间耦合磁场Hin低于已知技术，而RA和电阻变化率（DeltaR / R）与已知结构基本相同。

8. 发明授权

US08269492B2 Magnetic balance type current sensor 有权
标题翻译：磁平衡式电流传感器
公开(公告)号：US08269492B2
公开(公告)日：2012-09-18
申请号：US12891550
申请日：2010-09-27
申请人： Masamichi Saito , Akira Takahashi , Masahiro Iizuka , Tatsuya Kogure , Yosuke Ide , Yoshihiro Nishiyama , Kenji Ichinohe , Naoki Sakatsume , Tsuyoshi Nojima , Shigenobu Miyajima , Hidekazu Kobayashi
发明人： Masamichi Saito , Akira Takahashi , Masahiro Iizuka , Tatsuya Kogure , Yosuke Ide , Yoshihiro Nishiyama , Kenji Ichinohe , Naoki Sakatsume , Tsuyoshi Nojima , Shigenobu Miyajima , Hidekazu Kobayashi
IPC分类号： G01R33/09
CPC分类号： G01R15/205 , H01L43/08
摘要： A magnetic balance type current sensor measures a measured current which flows in a feedback coil when electrical conduction is provided by a voltage difference according to an induction magnetic field from the measured current and an equilibrium state is reached in which the induction magnetic field and a cancel magnetic field cancel each other. Sensor elements in a pair are arranged at positions with magnetic field from the measured current. The magnetization direction of the pinned magnetic layer in the magnetoresistive effect element of one sensor element is aligned in a forward direction with respect to the magnetic field formed by the measured current. The magnetization direction of the pinned magnetic layer in the magnetoresistive effect element of the other sensor element is aligned in a reverse direction with respect to the magnetic field formed by the measured current.
摘要翻译：磁平衡型电流传感器测量在通过根据来自测量电流的感应磁场的电压差提供电传导时在反馈线圈中流动的测量电流，并且达到平衡状态，其中感应磁场和取消磁场相互抵消。一对传感器元件被布置在具有来自测量电流的磁场的位置处。一个传感器元件的磁阻效应元件中的钉扎磁性层的磁化方向相对于由测量电流形成的磁场在正向方向上排列。另一传感器元件的磁阻效应元件中的钉扎磁性层的磁化方向相对于由测量电流形成的磁场的反方向排列。

9. 发明授权

US08009391B2 Magnetic sensing element and method for manufacturing the same 有权
标题翻译：磁传感元件及其制造方法
公开(公告)号：US08009391B2
公开(公告)日：2011-08-30
申请号：US12120887
申请日：2008-05-15
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译：下层由作为非晶磁性材料的Co-Fe-B组成。因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。

10. 发明授权

US07969690B2 Tunneling magnetoresistive element which includes Mg-O barrier layer and in which nonmagnetic metal sublayer is disposed in one of magnetic layers 有权
标题翻译：隧道磁阻元件，其包括Mg-O阻挡层，其中非磁性金属子层设置在磁性层之一中
公开(公告)号：US07969690B2
公开(公告)日：2011-06-28
申请号：US12042585
申请日：2008-03-05
申请人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3929 , H01L43/08
摘要： In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less.
摘要翻译：在隧道磁阻元件中，绝缘阻挡层由Mg-O制成，并且第一被钉扎磁性层具有其中由Ta制成的非磁性金属子层介于下铁磁层和上铁磁层之间的层叠结构。非磁性金属子层的平均厚度为约1埃以上且约5以下。

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