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    • 7. 发明授权
    • Vehicle intake manifolds
    • 车辆进气歧管
    • US06722335B2
    • 2004-04-20
    • US10315933
    • 2002-12-11
    • Kazuhisa NomuraSatoshi Hattori
    • Kazuhisa NomuraSatoshi Hattori
    • F02M3510
    • F02B27/021F02B27/0242F02B27/0252F02B27/0273F02B27/0294F02B2075/1824F02D9/101F02D9/1045Y02T10/146
    • Air intake manifolds (32) for vehicle engines (50) may include a plate-shaped short runner valve (16) that is rotatably disposed within an aperture (19) of a wall partition (42). The valve (16) may be operated to open and close the aperture. A flange (22) may extend from an inner surface of the aperture and the flange may define a sealing face (22b). An elastic sealing member (21) may be disposed along a peripheral edge of the valve. The sealing member may include first and second projections (21a, 21b) extending from the peripheral edge of the valve. The first and second projections may be arranged in a substantially V-shape. Further, the terminal ends of the first and second projections are preferably disposed so as to closely contact the sealing face when the valve is rotated to the closed position.
    • 用于车辆发动机(50)的进气歧管(32)可以包括可旋转地设置在壁分隔件(42)的孔(19)内的板形短流道阀(16)。 可以操作阀(16)以打开和关闭孔。 凸缘(22)可以从孔的内表面延伸并且凸缘可以限定密封面(22b)。 弹性密封构件(21)可以沿着阀的周边边缘设置。 密封构件可以包括从阀的周缘延伸的第一和第二突起(21a,21b)。 第一和第二突起可以布置成大致V形。 此外,第一突起和第二突起的末端优选地设置成当阀旋转到关闭位置时紧密接触密封面。
    • 9. 发明授权
    • Method for producing silicon oxide film
    • 氧化硅膜的制造方法
    • US07488693B2
    • 2009-02-10
    • US10589077
    • 2005-02-17
    • Hiroaki TakeuchiSatoshi HattoriHiroshi SuzukiKatsuyoshi Harada
    • Hiroaki TakeuchiSatoshi HattoriHiroshi SuzukiKatsuyoshi Harada
    • H01L21/26
    • C23C16/401H01L21/31604
    • [Problems] It is to provide a method for producing a silicon oxide film having better quality than a TEOS at low temperature. And it is to provide a method for manufacturing a semiconductor device wherein an insulating film composed of a silicon oxide is formed.[Means for solving problems] A film composed of a silicon oxide is produced by CVD method where a silane compound represented by the following general formula is reacted. An insulating film is deposited by CVD method where a silane compound represented by the following general formula is reacted. HnSi2(OR)6−n (In the above formula, R is an alkyl group of carbon number from 1 to 5, and n is an integer from 0 to 2.)
    • [问题]提供一种在低温下具有比TEOS更好质量的氧化硅膜的方法。 并且提供一种制造其中形成由氧化硅构成的绝缘膜的半导体器件的方法。 解决问题的手段通过CVD法制造由氧化硅构成的膜,其中由以下通式表示的硅烷化合物反应。 通过CVD法沉积绝缘膜,其中由以下通式表示的硅烷化合物反应。 <?in-line-formula description =“In-line Formulas”end =“lead”?> HnSi2(OR)6-n <?in-line-formula description =“In-line Formulas”end =“tail”? >(在上式中,R为碳原子数1〜5的烷基,n为0〜2的整数)