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1. 发明授权

US08241982B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08241982B2
公开(公告)日：2012-08-14
申请号：US12942057
申请日：2010-11-09
申请人： Yoshihiro Hirota , Yoshihiro Sato , Nobuo Okumura
发明人： Yoshihiro Hirota , Yoshihiro Sato , Nobuo Okumura
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L21/0214 , H01L21/02332 , H01L21/28273 , H01L21/31111 , H01L21/3144 , H01L21/3211 , H01L21/76232 , H01L29/42336 , H01L29/7881
摘要： A plasma nitriding process is followed by a selective etching process which removes a silicon oxynitride film formed on surfaces of both an element separation film and an insulation film while leaving a silicon nitride film formed on an electrode layer. The selective etching process removes the silicon oxynitride film formed on the surfaces of the element separation film and the insulation film.
摘要翻译：等离子体氮化处理之后是选择性蚀刻工艺，其除去在元件分离膜和绝缘膜的表面上形成的氮氧化硅膜，同时留下形成在电极层上的氮化硅膜。选择性蚀刻工艺除去在元件分离膜和绝缘膜的表面上形成的氧氮化硅膜。

2. 发明申请

US20120184107A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20120184107A1
公开(公告)日：2012-07-19
申请号：US13498259
申请日：2010-09-29
申请人： Yoshihiro Sato , Toshihiko Shiozawa , Tatsuo Nishita , Yoshihiro Hirota
发明人： Yoshihiro Sato , Toshihiko Shiozawa , Tatsuo Nishita , Yoshihiro Hirota
IPC分类号： H01L21/311
CPC分类号： H01L21/76224 , H01J37/32192 , H01L21/02236 , H01L21/31111 , H01L21/823857
摘要： In a semiconductor device manufacturing method, the formation of a sacrificial oxide film and removal thereof by wet etching and/or the formation of a silicon dioxide film and removal thereof by wet etching are performed. In the process for manufacturing a semiconductor device, the formation of the sacrificial oxide film and/or the silicon dioxide film is performed within a processing chamber of a plasma processing apparatus using a plasma in which O(1D2) radicals produced using a processing gas that contains oxygen are dominant.
摘要翻译：在半导体器件制造方法中，进行牺牲氧化膜的形成，通过湿法蚀刻和/或二氧化硅膜的形成以及通过湿蚀刻除去牺牲氧化膜。在制造半导体器件的过程中，牺牲氧化物膜和/或二氧化硅膜的形成在使用等离子体处理设备的处理室内进行，其中使用处理气体产生O（1D2）含氧占优势。

3. 发明授权

US09343655B2 Method for manufacturing bimorph actuator 有权
标题翻译：制造双压电晶片致动器的方法
公开(公告)号：US09343655B2
公开(公告)日：2016-05-17
申请号：US13279331
申请日：2011-10-24
申请人： Hisao Hori , Yoshikazu Abe , Yoshihiro Sato
发明人： Hisao Hori , Yoshikazu Abe , Yoshihiro Sato
IPC分类号： H01L41/09 , H01L41/22 , H01L41/331 , H01L41/08 , H01H49/00 , H01H57/00 , H01L41/047 , H01L41/29 , H01L41/318 , H01L41/332 , H03H9/56 , H03H9/58 , H03H9/60
CPC分类号： H01L41/331 , H01H49/00 , H01H57/00 , H01H2057/006 , H01L41/0478 , H01L41/0815 , H01L41/094 , H01L41/22 , H01L41/29 , H01L41/318 , H01L41/332 , H03H9/568 , H03H9/584 , H03H9/585 , H03H9/605 , Y10T29/42 , Y10T29/49005 , Y10T29/49147 , Y10T29/49155
摘要： To manufacture a switching apparatus that includes a piezoelectric actuator with increased lifespan, provided is a method for manufacturing a bimorph actuator, comprising first piezoelectric element layer formation of forming a first piezoelectric element layer on a substrate; support layer formation of forming a support layer made of an insulator on the first piezoelectric element layer; second piezoelectric element layer formation of forming a second piezoelectric element layer on the support layer; and removal of removing a portion of the substrate to form an actuator that includes the first piezoelectric element layer, the support layer, and the second piezoelectric element layer.
摘要翻译：为了制造包括具有增加的寿命的压电致动器的开关装置，提供了一种制造双压电晶片致动器的方法，包括在基板上形成第一压电元件层的第一压电元件层形成; 在所述第一压电元件层上形成由绝缘体制成的支撑层的支撑层形成; 在所述支撑层上形成第二压电元件层的第二压电元件层形成; 以及去除去除基板的一部分以形成包括第一压电元件层，支撑层和第二压电元件层的致动器。

4. 发明申请

US20130196242A1 FUEL CELL SYSTEM 审中-公开
标题翻译：燃油电池系统
公开(公告)号：US20130196242A1
公开(公告)日：2013-08-01
申请号：US13824910
申请日：2012-07-11
申请人： Susumu Hatano , Yoshio Tamura , Yoshihiro Sato , Manabu Takahashi , Takaaki Fujikawa
发明人： Susumu Hatano , Yoshio Tamura , Yoshihiro Sato , Manabu Takahashi , Takaaki Fujikawa
IPC分类号： H01M8/04
CPC分类号： H01M8/04089 , F04B17/042 , F04B43/04 , F04B45/047 , H01M8/04228 , H01M8/04425 , H01M8/04753 , H01M8/04776
摘要： A fuel cell system (1) includes a fuel cell (7), an electromagnetic diaphragm pump (8), a flow detector (9), and a controller (20). The controller is configured to set the frequency of the AC voltage (applied AC voltage) applied to the electromagnetic diaphragm pump, control the voltage of the applied AC voltage in the set frequency to cause the flow rate of the gas detected by the flow detector to reach a target flow rate; and the controller is configured to newly set the frequency of the applied AC voltage to a frequency at which the voltage of the applied AC voltage becomes smaller than a predetermined voltage when the voltage of the applied AC voltage becomes equal to or greater than the predetermined voltage.
摘要翻译：燃料电池系统（1）包括燃料电池（7），电磁隔膜泵（8），流量检测器（9）和控制器（20）。控制器被配置为设置施加到电磁隔膜泵的交流电压（施加的交流电压）的频率，控制施加的交流电压在设定频率中的电压，以使由流量检测器检测的气体的流量达到目标流量; 并且所述控制器被配置为当所施加的AC电压的电压变得等于或大于所述预定电压时，将所施加的AC电压的频率重新设置为施加的AC电压的电压变得小于预定电压的频率。

5. 发明授权

US08409961B2 Alteration method and alteration apparatus for titanium nitride 有权
标题翻译：氮化钛改性方法和改造装置
公开(公告)号：US08409961B2
公开(公告)日：2013-04-02
申请号：US13055154
申请日：2009-07-08
申请人： Takuya Sugawara , Yoshihiro Sato
发明人： Takuya Sugawara , Yoshihiro Sato
IPC分类号： H01L21/20
CPC分类号： H01L21/76886 , H01L21/76849 , H01L21/76862 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： An alteration method of a titanium nitride film, comprising exposing a titanium nitride film formed on a semiconductor substrate to plasma obtained by exciting a process gas that includes noble gas or nitrogen and excludes oxygen, thereby increasing a specific resistance of the titanium nitride film.
摘要翻译：氮化钛膜的改变方法包括将形成在半导体衬底上的氮化钛膜暴露于通过激发包含惰性气体或氮气的处理气体而获得的等离子体，并排除氧气，从而提高氮化钛膜的电阻率。

6. 发明申请

US20130032819A1 SEMICONDUCTOR TRANSISTOR 有权
标题翻译：半导体晶体管
公开(公告)号：US20130032819A1
公开(公告)日：2013-02-07
申请号：US13582229
申请日：2011-03-02
申请人： Hiroshi Kambayashi , Katsunori Ueno , Takehiko Nomura , Yoshihiro Sato , Akinobu Teramoto , Tadahiro Ohmi
发明人： Hiroshi Kambayashi , Katsunori Ueno , Takehiko Nomura , Yoshihiro Sato , Akinobu Teramoto , Tadahiro Ohmi
IPC分类号： H01L29/51
CPC分类号： H01L21/28264 , C23C16/403 , C23C16/4488 , H01L21/02178 , H01L21/02277 , H01L29/2003 , H01L29/513 , H01L29/517 , H01L29/78
摘要： The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of Al2O3, HfO2, ZrO2, La2O3, and Y2O3 formed on the active layer, and a second insulating film composed of SiO2 formed on the first insulating film.
摘要翻译：根据本发明的半导体晶体管包括由有源层形成的GaN基半导体和栅极绝缘膜构成的有源层。栅极绝缘膜具有包含一种或多种选自Al 2 O 3，HfO 2，ZrO 2，La 2 O 3和Y 2 O 3的化合物的第一绝缘膜和形成在第一绝缘膜上的由SiO 2构成的第二绝缘膜。

7. 发明申请

US20130012033A1 SILICON OXIDE FILM FORMING METHOD AND PLASMA OXIDATION APPARATUS 审中-公开
标题翻译：硅氧烷膜形成方法和等离子体氧化装置
公开(公告)号：US20130012033A1
公开(公告)日：2013-01-10
申请号：US13636030
申请日：2011-03-09
申请人： Yoshiro Kabe , Shuichiro Otao , Yoshihiro Sato
发明人： Yoshiro Kabe , Shuichiro Otao , Yoshihiro Sato
IPC分类号： H01L21/316 , C23C16/511
CPC分类号： H01L21/02164 , H01J37/321 , H01J37/32192 , H01J37/3244 , H01L21/02236 , H01L21/32105
摘要： A silicon oxide film forming method includes forming a silicon oxide film by allowing a plasma of a processing gas to react on a silicon exposed on a surface of a target object to be processed in a processing chamber of a plasma processing apparatus. The processing gas includes an ozone-containing gas having a volume ratio of O3 to a total volume of O2 and O3, ranging 50% or more.
摘要翻译：氧化硅膜形成方法包括通过使处理气体的等离子体在暴露于待处理对象物体的表面上的硅上在等离子体处理装置的处理室中反应来形成氧化硅膜。处理气体包括体积比为O 3与O 2和O 3的总体积比为50％以上的含臭氧气体。

8. 发明授权

US08247331B2 Method for forming insulating film and method for manufacturing semiconductor device 失效
标题翻译：绝缘膜的形成方法及半导体装置的制造方法
公开(公告)号：US08247331B2
公开(公告)日：2012-08-21
申请号：US12521645
申请日：2007-12-20
申请人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
发明人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
IPC分类号： H01L21/318 , H01L21/321
CPC分类号： H01L21/28202 , H01J37/32192 , H01L21/67109 , H01L21/67115
摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing first nitriding to the silicon exposed on the surface of the substrate, and forming a silicon nitride film having a thickness of 0.2 nm but not more than 1 nm on the surface of the substrate; and a step of performing first heat treatment to the silicon nitride film in N2O atmosphere and forming a silicon nitride film. This method may further include a step of performing second nitriding to the silicon oxynitride film, and furthermore, may include a step of performing second heat treatment to the silicon oxynitride film after the second nitriding.
摘要翻译：一种形成绝缘膜的方法包括制备待加工的基片并且在表面上具有硅的步骤; 对在基板表面露出的硅进行第一次氮化，在基板表面形成厚度为0.2nm以上且1nm以下的氮化硅膜的工序; 以及对N 2 O气氛中的氮化硅膜进行第一热处理并形成氮化硅膜的工序。该方法还可以包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二热处理的步骤。

9. 发明申请

US20110182163A1 OPTICAL PICKUP DEVICE 审中-公开
标题翻译：光学拾取器件
公开(公告)号：US20110182163A1
公开(公告)日：2011-07-28
申请号：US13012103
申请日：2011-01-24
申请人： Wataru SATO , Yoshihiro Sato , Yusuke Kogure
发明人： Wataru SATO , Yoshihiro Sato , Yusuke Kogure
IPC分类号： G11B7/12 , G11B33/02
CPC分类号： G11B7/127
摘要： The following problem associated with optical pickup devices is solved: the temperature of a laser element is increased by excessive temperature rise in a laser driver circuit and this degrades the quality of writing and reading information to and from an optical disc. In an optical pickup enclosure, there is formed a groove recessed into a U shape, extended from the upper surface thereof opposed to an optical disc to the lower surface of the optical pickup enclosure. An air guide passage through which an air flow is passed is formed of this groove recessed into a U shape and a circuit board fastened to the outer circumferential side of the optical pickup enclosure with a screw. At this time, the laser driver circuit element is attached to the side of the circuit board opposed to the air guide passage. In a radiation cover attached to the upper surface of the optical pickup enclosure and in thermal contact with the laser element, an opening is formed. This opening is substantially identical in shape with the aperture area in the air guide passage and is located in a position corresponding to the opening of the air guide passage in the upper surface of the optical pickup enclosure. Thus the air guide passage continues from the opening in the lower surface of the optical pickup enclosure to the surface opposed to the optical disc.
摘要翻译：解决了与光学拾取装置相关的以下问题：激光驱动电路中的激光元件的温度过高会升高，从而降低向光盘的写入和读取信息的质量。在光学拾取器外壳中，形成凹陷成U形的凹槽，其从与光盘相对的上表面延伸到光学拾取器外壳的下表面。空气流通过的空气引导通道由凹陷成U形的凹槽和用螺钉固定到光学拾取器外壳的外周侧的电路板形成。此时，激光驱动电路元件被安装在与引导通道相对的电路板侧。在附接到光学拾取器外壳的上表面并与激光元件热接触的辐射罩中，形成开口。该开口的形状与空气引导通道中的开口面积基本相同，并且位于与光学拾取器外壳的上表面中的空气引导通道的开口相对应的位置。因此，空气引导通道从光拾取器外壳的下表面中的开口延伸到与光盘相对的表面。

10. 发明授权

US07977800B2 Semiconductor device and fabrication method for the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07977800B2
公开(公告)日：2011-07-12
申请号：US12247518
申请日：2008-10-08
申请人： Tsutomu Oosuka , Hisashi Ogawa , Yoshihiro Sato
发明人： Tsutomu Oosuka , Hisashi Ogawa , Yoshihiro Sato
IPC分类号： H01L21/8234
CPC分类号： H01L23/535 , H01L21/28518 , H01L21/28525 , H01L21/76895 , H01L21/823425 , H01L21/823468 , H01L21/823475 , H01L27/11 , H01L29/161 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer.
摘要翻译：半导体器件包括：晶体管，其具有形成在半导体衬底上的栅极电极和形成在半导体衬底的位于栅电极两侧的部分中的第一和第二源极/漏极区域; 形成在相对于第一源极/漏极区域的与栅电极相对的位置处的栅极互连; 以及形成在所述第一源极/漏极区域上以在所述半导体衬底的顶表面上方突出的第一硅 - 锗层。栅极互连和第一源极/漏极区域经由包括第一硅 - 锗层的局部互连结构连接。

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