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1. 发明授权

US5378900A Crystal diameter measuring device 失效
标题翻译：水晶直径测量装置
公开(公告)号：US5378900A
公开(公告)日：1995-01-03
申请号：US158849
申请日：1993-11-29
申请人： Yoshihiro Hirano , Masahiko Baba
发明人： Yoshihiro Hirano , Masahiko Baba
IPC分类号： C30B15/26 , C30B35/00 , G01B11/08 , G01B11/10 , G01N21/86
CPC分类号： G01B11/105 , Y10T117/1004
摘要： The growing portion of a single crystal 1 grown by the pull method is recorded and the image signal is output to a digitizing circuit 3 that converts the image signal into binary data. A memory device 4 stores the digitized images and the point P at the boundary between dark and light is detected by scanning the stored digitized images starting from the scanning-start pixel and proceeding in the direction parallel to the direction of single crystal pulling. The diameter D of the growing portion of the single crystal is determined based upon the boundary P, and the scanning-start pixel for the current operation is set at the pixel that is separated from the boundary Pb in the preceding operation by a preset number of pixels d in the opposite direction of the scan.
摘要翻译：记录通过拉法生长的单晶1的生长部分，并将图像信号输出到将图像信号转换为二进制数据的数字化电路3。存储装置4存储数字化图像，并且通过从扫描开始像素开始扫描存储的数字化图像并沿与单晶拉取方向平行的方向进行扫描来检测暗和光之间的边界处的点P. 基于边界P确定单晶生长部分的直径D，并且将当前操作的扫描开始像素设置在与先前操作中的边界Pb分离预定数量的像素像素d在扫描的相反方向。

2. 发明授权

US4794263A Apparatus for measuring crystal diameter 失效
标题翻译：用于测量晶体直径的装置
公开(公告)号：US4794263A
公开(公告)日：1988-12-27
申请号：US109722
申请日：1987-10-19
申请人： Nobuo Katsuoka , Yoshihiro Hirano , Atsushi Ozaki , Masahiko Baba
发明人： Nobuo Katsuoka , Yoshihiro Hirano , Atsushi Ozaki , Masahiko Baba
IPC分类号： C30B15/26 , G01B11/08 , H01L21/18
CPC分类号： G01B11/08 , Y10T117/1004 , Y10T117/1012
摘要： An apparatus for measuring the diameter of a crystal in which an optical sensor scans along a sensing line which crosses at one point a luminous ring formed at the interface between a crystalline rod and a melt; the picture element position corresponding to a maximum luminance is discriminated when the optical sensor scans; the mean value of the picture element position is calculated over at least one revolution of the crystalline rod; and the diameter D of the crystalline rod at a portion thereof interfacing with the melt is calculated from the mean value and the level of the melt. Similarly, the minimum crystal diameter can be calculated by obtaining the picture element position corresponding to the minimum crystal diameter instead of obtaining the mean of the picture element position.
摘要翻译：一种用于测量晶体直径的装置，其中光学传感器沿着在结晶棒和熔体之间的界面处形成的发光环的一个点处的感测线扫描; 当光学传感器扫描时，判别对应于最大亮度的像素位置; 在结晶棒的至少一圈上计算像素位置的平均值; 并且根据熔融物的平均值和水平计算结晶棒在与熔体相接合的部分的直径D. 类似地，可以通过获得与最小晶体直径相对应的像素位置而不是获得像素位置的平均值来计算最小晶体直径。

3. 发明授权

US5584930A Method for measuring the diameter of a single crystal ingot 失效
标题翻译：测量单晶锭直径的方法
公开(公告)号：US5584930A
公开(公告)日：1996-12-17
申请号：US487507
申请日：1995-06-07
申请人： Nobuo Katsuoka , Yoshihiro Hirano , Atsushi Ozaki , Masahiko Baba
发明人： Nobuo Katsuoka , Yoshihiro Hirano , Atsushi Ozaki , Masahiko Baba
IPC分类号： H01L21/66 , C30B15/20 , C30B15/28 , G01B11/10 , G01G9/00
CPC分类号： G01G9/00 , C30B15/28 , G01B11/105 , Y10T117/1004
摘要： A method for measuring a diameter of a single crystal ingot pulled up in a single crystal pulling apparatus comprising: calculating the weight of the pulled-up single crystal, calculating the descent amount of the melt surface relative to the crucible wall from the calculated pulled-up weight of the grown single crystal, and then either correcting the value of the ingot diameter actually measured by the optical sensor in response to the descent amount of the melt surface level or raising the crucible by an amount equal to the descent amount of the surface level.
摘要翻译：一种用于测量在单晶拉制装置中拉起的单晶锭的直径的方法，包括：计算上拉单晶的重量，从计算的拉伸单元计算熔融表面相对于坩埚壁的下降量，生长的单晶的重量，然后响应于熔体表面水平的下降量或者将坩埚升高等于表面下降量的量来校正由光学传感器实际测量的锭直径的值水平。

4. 发明授权

US5138179A Method of and device for diameter measurement used in automatically controlled crystal growth 失效
标题翻译：用于自动控制晶体生长的直径测量方法和装置
公开(公告)号：US5138179A
公开(公告)日：1992-08-11
申请号：US685587
申请日：1991-03-29
申请人： Masahiko Baba , Hiroshi Ohtsuna
发明人： Masahiko Baba , Hiroshi Ohtsuna
IPC分类号： C30B15/26 , G01B11/08
CPC分类号： C30B15/26 , G01B11/08
摘要： Disclosed are a method of and a device for crystal diameter measurement in an apparatus for automatically controlling single crystal growth by the CZ technique. In the diameter measurement method, a growing region of a single crystal 32 is photographed by a camera 38, and an outer diamter Do of a luminous ring image 70 having a luminance above a reference value E is detected from a video signal supplied from the camera 38, the diameter Do thus detected being used for crystal diameter control. The crystal diameter measuring device comprises: a camera 38 for photographing a growing section of a single crystal 32 and supplying a video signal; devices for detecting a maximum video signal value with respect to one scanning line or more; a device for obtaining a reference value E corresponding to the above-mentioned maximum value; devices for binary-coding the video signal in comparison with the reference value E; and a device for detecting the outer diameter Do of a luminous image from a binary image obtained by the binary-coding.

5. 发明授权

US5183528A Method of automatic control of growing neck portion of a single crystal by the CZ method 失效
标题翻译：通过CZ方法自动控制单晶生长单元的方法
公开(公告)号：US5183528A
公开(公告)日：1993-02-02
申请号：US661348
申请日：1991-02-28
申请人： Masahiko Baba , Hiroshi Ohtsuna
发明人： Masahiko Baba , Hiroshi Ohtsuna
IPC分类号： C30B15/20 , C30B15/22 , C30B15/26 , C30B29/06
CPC分类号： C30B15/22 , Y10T117/1008
摘要： A method for automatically controlling growing a single crystal neck portion by the CZ method, comprising the steps of pulling up a seed crystal (30) at 2 mm/min. for five minutes so as to grow a single crystal 32; next measuring a diameter of the lower end of the crystal; modifying an electric power for heating a melt based on the difference between the measured diameter and a reference value; waiting for five minutes; keeping the electric power constant for 10 minutes with controlling the pulling up speed so as to approach the diameter of the crystal to the reference value and with measuring the pulling up speed repeatedly; and next modifying the power based on the difference between the mean speed and a reference value. The last two steps are repeated alternatively.

6. 发明授权

US5129986A Method for controlling specific resistance of single crystal and an apparatus therefor 失效
标题翻译：用于控制单晶和其装置的特定电阻的方法
公开(公告)号：US5129986A
公开(公告)日：1992-07-14
申请号：US614587
申请日：1990-11-16
申请人： Hidetoshi Seki , Seiichiro Ohtsuka , Masahiko Baba
发明人： Hidetoshi Seki , Seiichiro Ohtsuka , Masahiko Baba
IPC分类号： C30B15/20 , C30B15/00 , C30B29/06
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1008 , Y10T117/1032
摘要： A method for controlling a specific resistance of a single crystal in a Czochralski-method type single crystal pulling apparatus having a hermetical chamber in which the single crystal is pulled up from a polycrystal melt and an inert gas supply and exhaust system by means of which an inert gas is supplied to the hermetical chamber and exhausted therefrom; the method being characterized in that the pneumatic pressure in the hermetical chamber and the supply rate of the inert gas are controlled in accordance with a prepared control pattern with respect to the passage of pulling time.

7. 发明授权

US6030451A Two camera diameter control system with diameter tracking for silicon ingot growth 失效
标题翻译：两个相机直径控制系统，具有硅锭生长的直径跟踪
公开(公告)号：US6030451A
公开(公告)日：2000-02-29
申请号：US5773
申请日：1998-01-12
申请人： Aaron LaBrie , Masahiko Baba
发明人： Aaron LaBrie , Masahiko Baba
IPC分类号： C30B15/26 , C30B15/22
CPC分类号： C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： A method and apparatus for measuring and controlling the diameter of a silicon single crystal ingot grown by the Czochralski technique using dual optical cameras focused on diametrically opposed edges of the meniscus of the growing crystal to measure the actual crystal diameter. The crystal growth parameters can be adjusted in response to the measured diameter to maintain a constant, desired diameter. The method and apparatus of the invention provide a continuous accurate measurement of the crystal diameter and avoid unnecessary adjustments to the crystal growth conditions resulting from diameter measurement errors due to the effects of crystal orbit, melt level changes and camera angle variations.
摘要翻译：一种用于测量和控制通过使用双光学照相机通过切克劳斯基技术生长的硅单晶锭的直径的方法和装置，其聚焦在生长晶体的弯月面的直径相对的边缘上以测量实际晶体直径。可以响应于测量的直径来调节晶体生长参数以保持恒定的期望直径。本发明的方法和装置提供了晶体直径的连续精确测量，并且避免了由于晶体轨道，熔体水平变化和相机角度变化的影响而导致的直径测量误差对晶体生长条件的不必要的调整。

8. 发明授权

US5240684A Crystal diameter measuring device 失效
标题翻译：水晶直径测量装置
公开(公告)号：US5240684A
公开(公告)日：1993-08-31
申请号：US736293
申请日：1991-07-29
申请人： Masahiko Baba , Hiroyuki Ibe
发明人： Masahiko Baba , Hiroyuki Ibe
IPC分类号： G01B11/08 , C30B15/26 , G01B11/10
CPC分类号： G01B11/10
摘要： A device for measuring the diameter of the growing portions of the single crystals grown by the Czochralski technique is provided. This device is capable of measuring the crystal diameter with a high degree of accuracy over a wide range from the small-diameter portion thereof to the large diameter portion. A one-dimensional camera 28 and a two-dimensional camera 48 are fixed to a shoulder chamber 34 in such a manner that the optical axes thereof are parallel to each other. An optical path switch-over device, consisting of a cylinder 56, a movable plane mirror 52 mounted on a cylinder rod, and a fixed plane mirror 54, is provided. When the diameter of a neck portion of the single crystal 20 having a diameter of 10 mm or less is measured, the light reflected by the plane mirrors 52 and 54 is made incident on the two-dimensional camera 48, and the diameter of a bright ring 27 is measured on the basis of the image obtained by the two-dimensional camera. To measure the diameter of the conical and cylindrical portions 24 and 26 having a diameter of 10 mm or more, an image of a line lying across the bright ring 27 is obtained by the one-dimensional camera 28 by retracting the plane mirror 52, and the diameter of the bright ring 27 is measured.

9. 发明授权

US5089238A Method of forming a temperature pattern of heater and silicon single crystal growth control apparatus using the temperature pattern 失效
标题翻译：使用温度图案形成加热器和硅单晶生长控制装置的温度模式的方法
公开(公告)号：US5089238A
公开(公告)日：1992-02-18
申请号：US601096
申请日：1990-10-22
申请人： Kenji Araki , Akiho Maeda , Masahiko Baba
发明人： Kenji Araki , Akiho Maeda , Masahiko Baba
IPC分类号： C30B15/00 , C30B15/14 , C30B15/26 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/14 , C30B15/26 , Y10T117/1008
摘要： Used in an apparatus for pulling a Si single crystal 36 up from Si molten liquid 35 by using the Czochralski method. In order to produce a Si single crystal having a desired quality, the diameter of the Si single crystal is controlled by controlling the pull-up speed of the Si single crystal, the sum of a reference temperature set value T.sub.B (X), which is a function of a pull-up distance X of the Si single crystal from a certain growth point, and a value proportional to a diameter deviation .DELTA.D is regarded as a reference temperature, and electric power supplied to a heater (24) for heating the Si molten liquid is controlled so that the temperature of the vicinity of the heater is equal to the reference temperature. In order to easily and quickly set the temperature pattern, various operational data in producing a Si single crystal is automatically collected and stored in a magnetic memory disk (82) corresponding to quality data of the Si single crystals which have been produced, data similar to the quality of a Si single crystal to be produced is retrieved from the stored data, an operator selects the most similar data, the selected operational data is displayed in a display unit (80), and the operator sets the reference temperature pattern T.sub.B (X) on a screen of the display unit by using a mouse (78).

10. 发明授权

US06228165B1 Method of manufacturing crystal of silicon using an electric potential 有权
标题翻译：使用电位制造硅晶体的方法
公开(公告)号：US06228165B1
公开(公告)日：2001-05-08
申请号：US09362103
申请日：1999-07-28
申请人： Masahiko Baba , Scott Matthew Kirkland , Richard William Rudberg , Susumu Sonokawa , Darren Mark Taie , Akira Uchikawa
发明人： Masahiko Baba , Scott Matthew Kirkland , Richard William Rudberg , Susumu Sonokawa , Darren Mark Taie , Akira Uchikawa
IPC分类号： C30B1516
CPC分类号： C30B29/06 , C30B15/10
摘要： A method of manufacturing a crystal of silicon in accordance with a Czochralski method, includes the steps of applying an electric potential across a quartz crucible containing a silicon melt, and pulling a crystal of silicon from the silicon melt.
摘要翻译：根据切克劳斯基法（Czochralski method）制造硅晶体的方法包括以下步骤：跨越含有硅熔体的石英坩埚施加电位，并从硅熔体中拉出硅晶体。

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