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1. 发明授权

US5686734A Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device 失效
标题翻译：薄膜半导体器件和使用该薄膜半导体器件的光电转换器件
公开(公告)号：US5686734A
公开(公告)日：1997-11-11
申请号：US502603
申请日：1995-07-14
申请人： Yoshihiro Hamakawa , Shigetoshi Sugawa , Tadashi Atoji , Hiroaki Okamoto
发明人： Yoshihiro Hamakawa , Shigetoshi Sugawa , Tadashi Atoji , Hiroaki Okamoto
IPC分类号： H01L29/165 , H01L31/0376 , H01L31/107 , H01L29/12
CPC分类号： H01L31/03765 , H01L29/165 , H01L31/1075 , Y02E10/548
摘要： A high performance thin film semiconductor device having a heterojunction such as a photoelectric conversion device is disclosed. In accordance with the present invention, the thin film semiconductor device comprises a thin semiconductor layer which forms a heterojunction with a non-single crystal silicon layer or non-single crystal silicon-germanium layer, wherein the valence band discontinuity at the heterointerface arising from the difference in optical energy bandgap is as small as 0.3 eV or less and wherein the thin semiconductor layer has an optical energy bandgap greater than 2.8 eV, so that hole transport performance may not be degraded. Such a thin semiconductor layer may be formed by using silane gas and methane gas with a flow rate ratio greater than 30 at a deposition rate less than 0.5 .ANG./sec.
摘要翻译：公开了具有异质结的高性能薄膜半导体器件，例如光电转换器件。根据本发明，薄膜半导体器件包括与非单晶硅层或非单晶硅 - 锗层形成异质结的薄半导体层，其中由异源结面产生的价带不连续性光能带隙的差异小到0.3eV或更小，并且其中薄的半导体层具有大于2.8eV的光能带隙，使得空穴传输性能不会降低。这种薄的半导体层可以通过使用硅烷气体和甲烷气体形成，其流速比大于30，沉积速率小于每分钟0.5安培。

2. 发明授权

US07245002B2 Semiconductor substrate having a stepped profile 有权
标题翻译：具有阶梯形轮廓的半导体衬底
公开(公告)号：US07245002B2
公开(公告)日：2007-07-17
申请号：US10143015
申请日：2002-05-13
申请人： Yutaka Akino , Tadashi Atoji
发明人： Yutaka Akino , Tadashi Atoji
IPC分类号： H01L29/06 , H01L27/01
CPC分类号： H01L21/7624 , H01L21/2007 , H01L21/76251 , Y10T156/10 , Y10T156/1043 , Y10T156/1052
摘要： A semiconductor substrate which effectively prevents a chipping phenomenon, wherein the outer peripheral extremity of the insulation layer is located between the outer peripheral extremity of the semiconductor layer and the outer peripheral extremity of the support member, and wherein the semiconductor layer and the insulation layer produce a stepped profile.
摘要翻译：一种有效地防止切屑现象的半导体衬底，其中绝缘层的外周末端位于半导体层的外周末端和支撑构件的外周末端之间，并且其中半导体层和绝缘层产生一个阶梯轮廓。

3. 发明授权

US08029685B2 Liquid ejection head and its method of manufacture 有权
标题翻译：液体喷头及其制造方法
公开(公告)号：US08029685B2
公开(公告)日：2011-10-04
申请号：US11849683
申请日：2007-09-04
申请人： Hirokazu Komuro , Makoto Kurotobi , Tadashi Atoji , Takehito Okabe
发明人： Hirokazu Komuro , Makoto Kurotobi , Tadashi Atoji , Takehito Okabe
IPC分类号： G01D15/00
CPC分类号： B41J2/1642 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , Y10T29/49128 , Y10T29/4913 , Y10T29/49401
摘要： A method of manufacturing a liquid ejection head and a liquid ejection head capable of preventing corrosion of electrodes are provided. The method of manufacturing a liquid ejection head includes: a step of forming porous silicon areas in portions of a silicon substrate where the liquid paths are to be formed; a step of forming in layers in the porous silicon areas a protective layer, a heating resistor layer, an electrode layer and a heat accumulation layer; a step of forming ink ejection openings in the silicon substrate; and a step of removing the porous silicon areas.
摘要翻译：提供一种能够防止电极腐蚀的液体喷射头和液体喷射头的制造方法。制造液体喷射头的方法包括：在要形成液体路径的硅衬底的部分中形成多孔硅区域的步骤; 在多孔硅区域中形成保护层，加热电阻层，电极层和蓄热层的步骤; 在硅衬底中形成喷墨口的步骤; 以及去除多孔硅区域的步骤。

4. 发明授权

US06417108B1 Semiconductor substrate and method of manufacturing the same 有权
标题翻译：半导体衬底及其制造方法
公开(公告)号：US06417108B1
公开(公告)日：2002-07-09
申请号：US09238571
申请日：1999-01-28
申请人： Yutaka Akino , Tadashi Atoji
发明人： Yutaka Akino , Tadashi Atoji
IPC分类号： H01L21302
CPC分类号： H01L21/7624 , H01L21/2007 , H01L21/76251 , Y10T156/10 , Y10T156/1043 , Y10T156/1052
摘要： A method of manufacturing a semiconductor substrate can effectively prevent a chipping phenomenon and the production of debris from occurring in part of the insulation layer and the semiconductor by removing a outer peripheral portion of the semiconductor substrate so as to make the outer peripheral extremity of the insulation layer to be located between the outer peripheral extremity of the semiconductor layer and that of the support member and hence the semiconductor layer and the insulation layer produce a stepped profile.
摘要翻译：制造半导体衬底的方法可以通过去除半导体衬底的外围部分来有效地防止在绝缘层和半导体的一部分中产生碎屑现象和碎屑的产生，从而使绝缘层的外周末端位于半导体层的外周末端和支撑部件的外周末端之间，因此半导体层和绝缘层产生阶梯状。

5. 发明申请

US20070114609A1 SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体基板及其制造方法
公开(公告)号：US20070114609A1
公开(公告)日：2007-05-24
申请号：US11625497
申请日：2007-01-22
申请人： YUTAKA AKINO , Tadashi Atoji
发明人： YUTAKA AKINO , Tadashi Atoji
IPC分类号： H01L27/12
CPC分类号： H01L21/7624 , H01L21/2007 , H01L21/76251 , Y10T156/10 , Y10T156/1043 , Y10T156/1052
摘要： A method of manufacturing a semiconductor substrate can effectively prevent a chipping phenomenon and the production of debris from occurring in part of the insulation layer and the semiconductor by removing a outer peripheral portion of the semiconductor substrate so as to make the outer peripheral extremity of the insulation layer to be located between the outer peripheral extremity of the semiconductor layer and that of the support member and hence the semiconductor layer and the insulation layer produce a stepped profile.
摘要翻译：制造半导体衬底的方法可以通过去除半导体衬底的外围部分来有效地防止在绝缘层和半导体的一部分中产生碎屑现象和碎屑的产生，从而使绝缘层的外周末端位于半导体层的外周末端和支撑部件的外周末端之间，因此半导体层和绝缘层产生阶梯状。

6. 发明申请

US20060073644A1 Method of manufacturing bonded substrate stack 失效
标题翻译：制造键合衬底叠层的方法
公开(公告)号：US20060073644A1
公开(公告)日：2006-04-06
申请号：US11222903
申请日：2005-09-09
申请人： Tadashi Atoji , Ryuji Moriwaki
发明人： Tadashi Atoji , Ryuji Moriwaki
IPC分类号： H01L21/339
CPC分类号： H01L21/76259 , H01L21/02052 , H01L21/306 , H01L24/83 , H01L2224/83
摘要： A method of manufacturing a bonded substrate stack includes a bonding surface processing step of processing at least one of first and second substrates each containing silicon and having a bonding surface, and a bonding step of bonding the bonding surface of the first substrate and the bonding surface of the second substrate. The bonding surface processing step includes an OH group increasing step of increasing OH groups on the bonding surfaces, and a moisture content decreasing step of heating the bonding surfaces where the OH groups have been increased at a temperature falling within a range of 50° C. to 200° C. to decrease moisture contents of the bonding surfaces.
摘要翻译：一种键合衬底叠层体的制造方法，其特征在于，具有：接合面处理工序，其对含有硅的第一基板和第二基板中的至少一个进行处理，具有接合面;以及接合工序，其将所述第一基板的接合面与所述接合面的第二基板。接合表面处理步骤包括在接合表面上增加OH基团的OH基增加步骤和在50℃的温度范围内加热OH基团已经增加的接合表面的水分含量降低步骤。至200℃，以降低粘合表面的水分含量。

7. 发明授权

US6103009A Fabrication process for a SOI substrate 失效
标题翻译： SOI衬底的制造工艺
公开(公告)号：US6103009A
公开(公告)日：2000-08-15
申请号：US760670
申请日：1996-12-09
申请人： Tadashi Atoji
发明人： Tadashi Atoji
IPC分类号： H01L21/302 , H01L21/02 , H01L21/306 , H01L21/3065 , H01L21/762 , H01L27/12 , C30B33/08
CPC分类号： H01L21/76251 , H01L21/30604 , H01L21/3065 , H01L21/76256
摘要： A process for fabricating a SOI substrate efficiently removes a non-porous Si region on a porous Si region, and solves the problem of etching of glass substrates and the problem that a relatively thick porous Si region is necessary. The process for fabricating a SOI substrate comprises a step of making a surface layer of a single-crystal Si substrate porous to form a porous single-crystal Si region on a first non-porous single-crystal Si region; a step of forming a second non-porous single-crystal Si region over a surface of the porous single-crystal Si region; a step of bonding a support substrate through an insulating region to a surface of the second non-porous single-crystal Si region; a step of removing the first non-porous single-crystal Si region; and a step of removing the porous single-crystal Si region, wherein the step of removing the first non-porous single-crystal Si region comprises a step of performing dry etching in which an etch rate of non-porous single-crystal Si region is greater than that of porous single-crystal Si region.
摘要翻译：制造SOI衬底的工艺有效地除去多孔Si区域上的无孔Si区域，并且解决了玻璃衬底的蚀刻问题以及需要相对较厚的多孔Si区域的问题。制造SOI衬底的工艺包括使单晶Si衬底的表面层多孔化以在第一非多孔单晶Si区上形成多孔单晶Si区的步骤; 在多孔单晶Si区的表面上形成第二无孔单晶Si区的步骤; 将支撑基板通过绝缘区域接合到第二无孔单晶Si区域的表面的步骤; 去除第一非多孔单晶Si区的步骤; 以及去除多孔单晶Si区域的步骤，其中去除第一非多孔单晶Si区域的步骤包括进行干法蚀刻的步骤，其中非多孔单晶Si区域的蚀刻速率为大于多孔单晶Si区域。

8. 发明授权

US6054363A Method of manufacturing semiconductor article 失效
标题翻译：半导体制品的制造方法
公开(公告)号：US6054363A
公开(公告)日：2000-04-25
申请号：US968664
申请日：1997-11-12
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Tadashi Atoji
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Tadashi Atoji
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76259
摘要： A method of manufacturing a semiconductor article comprises steps of preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on the porous silicon layer, bonding the first substrate and a second substrate to produce a multilayer structure with the nonporous semiconductor layer located inside, separating the first and second substrates of the multilayer structure from each other along the porous silicon layer by heating the multilayer structure and removing the porous silicon layer remaining on the separated second substrate.
摘要翻译：一种制造半导体产品的方法包括以下步骤：制备包括具有多孔硅层的硅衬底和布置在多孔硅层上的无孔半导体层的第一衬底的步骤，将第一衬底和第二衬底接合以产生多层结构，位于内部的无孔半导体层，通过加热多层结构并除去留在分离的第二基板上的多孔硅层，将多层结构的第一和第二基板沿着多孔硅层彼此分离。

9. 发明授权

US07642112B2 Method of manufacturing bonded substrate stack 失效
标题翻译：制造键合衬底叠层的方法
公开(公告)号：US07642112B2
公开(公告)日：2010-01-05
申请号：US11222903
申请日：2005-09-09
申请人： Tadashi Atoji , Ryuji Moriwaki
发明人： Tadashi Atoji , Ryuji Moriwaki
IPC分类号： H01L21/00
CPC分类号： H01L21/76259 , H01L21/02052 , H01L21/306 , H01L24/83 , H01L2224/83
摘要： A method of manufacturing a bonded substrate stack includes a bonding surface processing step of processing at least one of first and second substrates each containing silicon and having a bonding surface, and a bonding step of bonding the bonding surface of the first substrate and the bonding surface of the second substrate. The bonding surface processing step includes an OH group increasing step of increasing OH groups on the bonding surfaces, and a moisture content decreasing step of heating the bonding surfaces where the OH groups have been increased at a temperature falling within a range of 50° C. to 200° C. to decrease moisture contents of the bonding surfaces.
摘要翻译：一种键合衬底叠层体的制造方法，其特征在于，具有：接合面处理工序，其对含有硅的第一基板和第二基板中的至少一个进行处理，具有接合面;以及接合工序，其将所述第一基板的接合面与所述接合面的第二基板。接合表面处理步骤包括在接合表面上增加OH基团的OH基增加步骤和在50℃的温度范围内加热OH基团已经增加的接合表面的水分含量降低步骤。至200℃，以降低粘合表面的水分含量。

10. 发明申请

US20080076197A1 METHOD OF MANUFACTURING A LIQUID EJECTION HEAD AND LIQUID EJECTION HEAD 有权
标题翻译：液体喷射头和液体喷射头的制造方法
公开(公告)号：US20080076197A1
公开(公告)日：2008-03-27
申请号：US11849683
申请日：2007-09-04
申请人： Hirokazu Komuro , Makoto Kurotobi , Tadashi Atoji , Takehito Okabe
发明人： Hirokazu Komuro , Makoto Kurotobi , Tadashi Atoji , Takehito Okabe
IPC分类号： H01L21/00 , B41J2/04
CPC分类号： B41J2/1642 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , Y10T29/49128 , Y10T29/4913 , Y10T29/49401
摘要： A method of manufacturing a liquid ejection head and a liquid ejection head capable of preventing corrosion of electrodes are provided. A method of manufacturing a liquid ejection head includes: a steps of forming porous silicon areas in portions of a silicon substrate where the liquid paths are to be formed; a steps of forming in layers in the porous silicon areas a protective layer, a heating resistor layer, an electrode layer and a heat accumulation layer; a steps of forming ink ejection openings in the silicon substrate; and a steps of removing the porous silicon areas.
摘要翻译：提供一种能够防止电极腐蚀的液体喷射头和液体喷射头的制造方法。制造液体喷射头的方法包括：在要形成液体路径的硅衬底的部分中形成多孔硅区域的步骤; 在多孔硅区域中形成保护层，加热电阻层，电极层和蓄热层的步骤; 在硅衬底中形成喷墨口的步骤; 以及去除多孔硅区域的步骤。

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