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1. 发明授权

US06563332B2 Checker head 有权
标题翻译：检查头
公开(公告)号：US06563332B2
公开(公告)日：2003-05-13
申请号：US09463995
申请日：2000-05-09
申请人： Yoshihiro Goto , Shinji Ohno , Yasumitsu Murase
发明人： Yoshihiro Goto , Shinji Ohno , Yasumitsu Murase
IPC分类号： G01R3102
CPC分类号： G01R1/07371
摘要： The present invention is a checker head for inspecting an object having even a small test pad pitch, without using a wired socket. The checker head includes a pin to be brought into contact with a test pad of the object, a conductor connected to a circuit tester, and a spring in contact with the pin and conductor and disposed linearly between the pin and conductor. Another mode of checker head has a structure in which a pin to be brought into contact with a test pad of an object and a conductor in contact with the pin and connected to a circuit tester are arranged in line and inserted through laminated body including an elastic layer, and the position of the pin and conductor are restricted by the elastic layer.
摘要翻译：本发明是一种用于在不使用有线插座的情况下检查具有小的测试垫间距的物体的检查头。检查头包括与物体的测试垫接触的销，连接到电路测试器的导体以及与销和导体接触并且直接设置在销和导体之间的弹簧。检查头的另一种模式具有这样的结构，其中与物体的测试垫接触的销和与销接触并连接到电路测试器的导体排成一行并插入穿过包括弹性的层叠体并且销和导体的位置被弹性层限制。

2. 发明授权

US09112036B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US09112036B2
公开(公告)日：2015-08-18
申请号：US13482398
申请日：2012-05-29
申请人： Junichi Koezuka , Shinji Ohno , Yuichi Sato , Shunpei Yamazaki
发明人： Junichi Koezuka , Shinji Ohno , Yuichi Sato , Shunpei Yamazaki
IPC分类号： H01L21/8232 , H01L29/786
CPC分类号： H01L29/7869
摘要： A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.
摘要翻译：提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。在包括具有沟道形成区域的氧化物半导体膜的晶体管的制造方法中，在氧化物半导体膜上形成包含金属元素的绝缘膜，以及通过注入在绝缘膜上添加的掺杂剂的低电阻区域包含的方法形成在氧化物半导体膜中。沟道形成区域位于沟道长度方向的低电阻区域之间。

3. 发明授权

US08809992B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08809992B2
公开(公告)日：2014-08-19
申请号：US13356012
申请日：2012-01-23
申请人： Shunpei Yamazaki , Atsuo Isobe , Toshihiko Saito , Takehisa Hatano , Hideomi Suzawa , Shinya Sasagawa , Junichi Koezuka , Yuichi Sato , Shinji Ohno
发明人： Shunpei Yamazaki , Atsuo Isobe , Toshihiko Saito , Takehisa Hatano , Hideomi Suzawa , Shinya Sasagawa , Junichi Koezuka , Yuichi Sato , Shinji Ohno
IPC分类号： H01L29/786
CPC分类号： H01L29/66969 , H01L21/02488 , H01L21/02565 , H01L27/1225 , H01L29/786 , H01L29/78606 , H01L29/7869
摘要： A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.
摘要翻译：提供了包括氧化物半导体并且具有良好的电特性的半导体器件。在半导体器件中，在衬底上形成氧化物半导体膜和绝缘膜。氧化物半导体膜的侧面与绝缘膜接触。氧化物半导体膜包括沟道形成区域和包含掺杂剂的区域，沟道形成区域夹在其间。栅极绝缘膜与氧化物半导体膜形成并接触。在栅绝缘膜上形成具有侧壁绝缘膜的栅电极。源电极和漏电极形成为与氧化物半导体膜和绝缘膜接触。

4. 发明申请

US20110015144A1 ADMINISTRATION METHOD PROPOSING DEVICE 有权
标题翻译：建议设备的管理方法
公开(公告)号：US20110015144A1
公开(公告)日：2011-01-20
申请号：US12934146
申请日：2009-01-26
申请人： Masakazu Toi , Hiroji Iwata , Katsumasa Kuroi , Seigo Nakamura , Shinji Ohno , Norikazu Masuda , Kenjiro Aogi , Nobuaki Sato , Futoshi Akiyama , Masafumi Kurosumi , Hitoshi Tsuda
发明人： Masakazu Toi , Hiroji Iwata , Katsumasa Kuroi , Seigo Nakamura , Shinji Ohno , Norikazu Masuda , Kenjiro Aogi , Nobuaki Sato , Futoshi Akiyama , Masafumi Kurosumi , Hitoshi Tsuda
IPC分类号： A61K31/704 , G06Q50/00 , A61P35/00
CPC分类号： A61K31/337 , A61K31/513 , A61K31/675 , A61K31/704 , C07K14/71 , C07K14/721 , G01N2333/71 , G01N2333/723 , G06F19/00 , G06F19/3456 , G06Q50/22 , G16H10/20
摘要： There was no device that proposes a method for administrating anti-cancer drugs according to each of cancer types.An administration method proposing device (100) includes an input unit (101) that receives an input of the cancer type of a cancer patient, an administration procedure determination unit (102) that determines the administration order of an FEC (F: 5-fluorouracil, E: epirubicin, and C: cyclophosphamide) administration cycle and a docetaxel administration cycle, and a display unit (103) that displays the administration order of the FEC administration cycle and the docetaxel administration cycle, as a result of the determination by the administration procedure determination unit (102).
摘要翻译：没有提出根据癌症类型给予抗癌药物的方法的装置。管理方法提出装置（100）包括接收癌症患者的癌症类型的输入的输入单元（101），确定FEC（F：5-氟尿嘧啶（F））的给药顺序的给药程序确定单元，E：表柔比星和C：环磷酰胺）给药周期和多西紫杉醇给药周期，以及显示单位（103），其显示了FEC给药周期和多西紫杉醇给药周期的给药顺序，作为由给药过程确定单元（102）。

5. 发明授权

US09287407B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US09287407B2
公开(公告)日：2016-03-15
申请号：US13484670
申请日：2012-05-31
申请人： Junichi Koezuka , Shinji Ohno , Yuichi Sato , Shunpei Yamazaki
发明人： Junichi Koezuka , Shinji Ohno , Yuichi Sato , Shunpei Yamazaki
IPC分类号： H01L21/22 , H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/4908 , H01L29/495 , H01L29/66969 , H01L29/78603 , H01L29/78618
摘要： A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.
摘要翻译：提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。晶体管包括包括沟道形成区域的氧化物半导体膜和包含金属元素和掺杂剂的低电阻区域。沟道形成区域位于沟道长度方向的低电阻区域之间。在晶体管的制造方法中，通过在氧化物半导体膜与包含金属元素的膜接触的状态下进行的热处理来添加金属元素，并且通过植入通过包含金属元素的膜添加掺杂剂形成包含金属元素和掺杂剂的低电阻区域。

6. 发明授权

US08802493B2 Manufacturing method of oxide semiconductor device 有权
标题翻译：氧化物半导体器件的制造方法
公开(公告)号：US08802493B2
公开(公告)日：2014-08-12
申请号：US13604937
申请日：2012-09-06
申请人： Junichi Koezuka , Shinji Ohno , Yuichi Sato , Sachiaki Tezuka , Tomokazu Yokoi , Yusuke Shino
发明人： Junichi Koezuka , Shinji Ohno , Yuichi Sato , Sachiaki Tezuka , Tomokazu Yokoi , Yusuke Shino
IPC分类号： H01L21/00
CPC分类号： H01L29/242 , H01L21/02565 , H01L21/0262 , H01L21/02639 , H01L21/84 , H01L27/10873 , H01L27/1156 , H01L27/1203 , H01L29/04 , H01L29/66757 , H01L29/7869
摘要： The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.
摘要翻译：氧化物半导体膜与金属膜之间的接触电阻降低。提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。提供能够进行高速运转的半导体装置。在使用氧化物半导体膜的晶体管中，对氧化物半导体膜进行氮等离子体处理。因此，氧化物半导体膜中包含的部分氧被氮代替，从而形成氧氮化物区。形成与氧氮化物区域接触的金属膜。氧氮化物区域的电阻比氧化物半导体膜的其他区域低。此外，氧氮化物区域不可能在与接触金属膜的界面处形成高电阻金属氧化物。

7. 发明授权

US08196998B2 Vehicle front structure 有权
标题翻译：车辆前部结构
公开(公告)号：US08196998B2
公开(公告)日：2012-06-12
申请号：US12726997
申请日：2010-03-18
申请人： Shinji Ohno , Taku Sumino , Hironori Shigemasu , Idemitsu Masuda , Akito Miyazaki
发明人： Shinji Ohno , Taku Sumino , Hironori Shigemasu , Idemitsu Masuda , Akito Miyazaki
IPC分类号： B60R19/26 , B60R19/52
CPC分类号： B62D25/084 , B60R19/48 , B60R19/52 , B60R2019/486 , B60R2019/505 , B60R2019/525
摘要： A vehicle front structure has a pair of right and left apron side members 1 each extending in the vehicle longitudinal direction and having a closed cross section structure, a bumper 2 located on the vehicle front side Fr of the front end portion of the apron side member 1, and a grille 5 attached to air intake openings 3, 4 in the bumper 2. In this vehicle front structure, shock absorbing parts 20 formed integrally with the grille 5 are disposed between the bumper 2 and the front end portions of the apron side members 1.
摘要翻译：车辆前部结构具有沿车辆纵向方向延伸并且具有闭合截面结构的一对左右的挡板侧构件1，位于挡板侧构件的前端部的车辆前侧Fr上的保险杠2 在该车辆前部结构中，与保险杠2和挡板侧的前端部之间设置有与格栅5一体形成的减震部20，会员1。

8. 发明授权

US06391075B1 Packaged air filter part and method of packaging the air filter part 有权
标题翻译：包装空气过滤器部件和包装空气过滤器部件的方法
公开(公告)号：US06391075B1
公开(公告)日：2002-05-21
申请号：US09680933
申请日：2000-10-10
申请人： Kazuhiro Meiji , Seiichi Hirano , Osamu Inoue , Shinji Ohno
发明人： Kazuhiro Meiji , Seiichi Hirano , Osamu Inoue , Shinji Ohno
IPC分类号： B01D4600
CPC分类号： B01D39/1623 , B01D39/1692 , B01D2239/0233 , B01D2239/065 , B01D2239/0654 , B01D2239/0668 , B01D2239/069 , B01D2239/1233 , B01D2239/1291
摘要： A packaged air filter part and a method of packaging the air filter part are provided to suppress the absorption of organic substances by the air filter part. The air filter part is encased within a packaging material and has a filter medium capable of cleaning air in at least a part thereof. The dibutyl phthalate content per 1 g of the filter medium is 1.0 &mgr;g or lower when the filter medium is taken out of the encasing of the packaging material. The air filter package unit includes the air filter part, and a packaging material arranged so that the filter medium is shielded from outside air. The method of packaging an air filter includes a step of producing air filter part, a step of packaging the air filter part with a first material, and a step of further packaging the packaged air filter part with a second material.
摘要翻译：提供包装的空气过滤器部件和包装空气过滤器部件的方法以抑制由空气过滤器部件吸收有机物质。空气过滤器部件被封装在包装材料内，并且具有能够在其至少一部分中清洁空气的过滤介质。当过滤介质从包装材料的包装中取出时，每1g过滤介质的邻苯二甲酸二丁酯含量为1.0杯或更低。空气过滤器包装单元包括空气过滤器部分和布置成使得过滤介质被外部空气屏蔽的包装材料。包装空气过滤器的方法包括制造空气过滤器部件的步骤，用第一材料包装空气过滤器部件的步骤，以及用第二材料进一步包装包装的空气过滤器部件的步骤。

9. 发明授权

US08927982B2 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device 有权
标题翻译：氧化物半导体膜，半导体器件以及半导体器件的制造方法
公开(公告)号：US08927982B2
公开(公告)日：2015-01-06
申请号：US13415080
申请日：2012-03-08
申请人： Junichi Koezuka , Yuichi Sato , Shinji Ohno
发明人： Junichi Koezuka , Yuichi Sato , Shinji Ohno
IPC分类号： H01L29/12 , H01L29/786
CPC分类号： H01L29/78618 , G02F1/136204 , G02F1/136213 , G02F1/136286 , G02F1/1368 , H01L21/02565 , H01L21/0259 , H01L21/265 , H01L27/1052 , H01L27/1225 , H01L27/1255 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.
摘要翻译：通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。在使用有源层的氧化物半导体膜的晶体管中，在与沟道区相邻的源极区域和漏极区域中设置有微孔。通过在形成于氧化物半导体膜中的源极区域和漏极区域内设置微孔，氧化物半导体膜的沟道区域中所含的氢能够被捕获在微孔中。

10. 发明授权

US08859330B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08859330B2
公开(公告)日：2014-10-14
申请号：US13419468
申请日：2012-03-14
申请人： Junichi Koezuka , Shinji Ohno , Yuichi Sato
发明人： Junichi Koezuka , Shinji Ohno , Yuichi Sato
IPC分类号： H01L21/00 , H01L21/425 , H01L29/66 , H01L29/786 , H01L27/12
CPC分类号： H01L21/425 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified.
摘要翻译：提供了包括具有稳定的电特性和高可靠性的氧化物半导体的半导体器件。在制造包括氧化物半导体膜的晶体管的方法中，执行将稀有气体离子注入到氧化物半导体膜中的注入步骤，并且将减少稀有气体离子的氧化物半导体膜在减小的温度下进行加热步骤压力，在氮气气氛中或在稀有气体气氛中，由此释放在其中植入稀有气体离子的氧化物半导体膜中所含的氢或水; 因此，氧化物半导体膜被高度纯化。

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