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1. 发明申请

US20050051194A1 Method for high-pressure processing 失效
标题翻译：高压处理方法
公开(公告)号：US20050051194A1
公开(公告)日：2005-03-10
申请号：US10915320
申请日：2004-08-11
申请人： Yoshihiko Sakashita , Takahiko Ishii , Masahiro Yamagata , Tetsuya Yoshikawa
发明人： Yoshihiko Sakashita , Takahiko Ishii , Masahiro Yamagata , Tetsuya Yoshikawa
IPC分类号： G03F7/42 , A01J11/04 , B08B5/04 , B08B7/00 , H01L21/027 , H01L21/304
CPC分类号： B08B7/0021 , G03F7/422
摘要： An object is subjected to high-pressure processing by bringing at least a high-pressure fluid into contact with the object under pressure in a high-pressure processing chamber, and then the high-pressure processing chamber is depressurized while the temperature in the chamber is controlled to be maintained above a temperature achieved by an adiabatic expansion, the adiabatic expansion starting from the pressure and temperature at the end of the high-pressure processing step. To control in such a way, the temperature in the high-pressure processing chamber is controlled so as to suppress or recover a temperature descent caused by an adiabatic expansion during the depressurizing step. This solves a problem in which the temperature is decreased to the vapor-liquid phase coexistence region or a region in which a solid is deposited.
摘要翻译：通过在高压处理室中使至少一个高压流体与压力物体接触而对物体进行高压处理，然后高压处理室在室内的温度为控制为保持高于通过绝热膨胀实现的温度，绝热膨胀从高压加工步骤结束时的压力和温度开始。为了以这种方式进行控制，控制高压处理室中的温度以抑制或恢复在减压步骤期间由绝热膨胀引起的温度下降。这解决了温度降低到气相共存区域或其中沉积固体的区域的问题。

2. 发明授权

US07520938B2 Method for high-pressure processing 失效
标题翻译：高压处理方法
公开(公告)号：US07520938B2
公开(公告)日：2009-04-21
申请号：US10915320
申请日：2004-08-11
申请人： Yoshihiko Sakashita , Takahiko Ishii , Masahiro Yamagata , Tetsuya Yoshikawa
发明人： Yoshihiko Sakashita , Takahiko Ishii , Masahiro Yamagata , Tetsuya Yoshikawa
IPC分类号： B08B5/00
CPC分类号： B08B7/0021 , G03F7/422
摘要： An object is subjected to high-pressure processing by bringing at least a high-pressure fluid into contact with the object under pressure in a high-pressure processing chamber, and then the high-pressure processing chamber is depressurized while the temperature in the chamber is controlled to be maintained above a temperature achieved by an adiabatic expansion, the adiabatic expansion starting from the pressure and temperature at the end of the high-pressure processing step. To control in such a way, the temperature in the high-pressure processing chamber is controlled so as to suppress or recover a temperature descent caused by an adiabatic expansion during the depressurizing step. This solves a problem in which the temperature is decreased to the vapor-liquid phase coexistence region or a region in which a solid is deposited.
摘要翻译：通过在高压处理室中使至少一个高压流体与压力物体接触而对物体进行高压处理，然后高压处理室在室内的温度为控制为保持高于通过绝热膨胀实现的温度，绝热膨胀从高压加工步骤结束时的压力和温度开始。为了以这种方式进行控制，控制高压处理室中的温度以抑制或恢复在减压步骤期间由绝热膨胀引起的温度下降。这解决了温度降低到气相共存区域或其中沉积固体的区域的问题。

3. 发明授权

US5792271A System for supplying high-pressure medium gas 失效
标题翻译：供应高压中等气体的系统
公开(公告)号：US5792271A
公开(公告)日：1998-08-11
申请号：US845821
申请日：1997-04-28
申请人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
发明人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
IPC分类号： F27B17/00 , B01J3/02 , B01J4/00 , F17C7/00 , H01L23/02 , C23C14/80
CPC分类号： F17C7/00 , B01J3/02 , B01J4/008 , F17C2205/0332 , F17C2205/0341 , F17C2221/011 , F17C2221/016 , F17C2221/05 , F17C2223/0123 , F17C2227/0348 , F17C2227/0386 , F17C2227/048 , F17C2270/0518
摘要： The present invention provides a system for supplying a high-pressure medium gas suitable for processing a semiconductor to be processed by heating under isostatic pressure in a short cycle. The system includes a gas holder containing a high-pressure medium gas, a compressor for pressurizing the high-pressure medium gas supplied from the gas holder, a high-pressure vessel having a heater, an accumulator for storing the high-pressure medium gas pressurized by the compressor, a first evacuation unit for evacuating the inside of a pipeline for the high-pressure medium gas, a vacuum casing for holding the opening of the high-pressure vessel in a vacuum, a second evacuation unit for evacuating the inside of the vacuum casing, and a valve unit for connecting the high-pressure vessel and the accumulator so that series connection and parallel connection can be switched on the outlet side of the compressor.
摘要翻译：本发明提供了一种用于在短时间内以等压压力下加热适于处理待处理半导体的高压介质气体的系统。该系统包括含有高压介质气体的气体保持器，用于对从气体保持器供给的高压介质气体进行加压的压缩机，具有加热器的高压容器，用于将高压介质气体进行加压的储液器通过压缩机将用于排出高压介质气体的管道内部的第一抽空单元，用于将高压容器的开口保持在真空中的真空壳体，用于抽出高压介质气体的内部的第二抽空单元真空壳体和用于连接高压容器和蓄能器的阀单元，使得可以在压缩机的出口侧上切换串联和并联连接。

4. 发明授权

US06703316B2 Method and system for processing substrate 有权
标题翻译：基板处理方法及系统
公开(公告)号：US06703316B2
公开(公告)日：2004-03-09
申请号：US10132212
申请日：2002-04-26
申请人： Yoichi Inoue , Yoshihiko Sakashita , Katsumi Watanabe , Nobuyuki Kawakami , Takahiko Ishii , Yusuke Muraoka , Kimitsugu Saito , Tomomi Iwata , Ikuo Mizobata , Takashi Miyake , Ryuji Kitakado
发明人： Yoichi Inoue , Yoshihiko Sakashita , Katsumi Watanabe , Nobuyuki Kawakami , Takahiko Ishii , Yusuke Muraoka , Kimitsugu Saito , Tomomi Iwata , Ikuo Mizobata , Takashi Miyake , Ryuji Kitakado
IPC分类号： H01L21302
CPC分类号： H01L21/02052 , H01L21/67028
摘要： A method and system for processing a substrate includes performing a wet process by supplying a working liquid to a substrate in a wet processing apparatus, transferring the substrate in a non-dry state from the wet processing apparatus to a drying apparatus, and subjecting the substrate to a supercritical drying by a supercritical fluid in the drying apparatus.
摘要翻译：用于处理衬底的方法和系统包括通过在湿法处理设备中将工作液体供应到衬底来进行湿法处理，将非干燥状态的衬底从湿法处理设备转移到干燥设备，并对衬底在干燥装置中通过超临界流体进行超临界干燥。

5. 发明授权

US5898727A High-temperature high-pressure gas processing apparatus 失效
标题翻译：高温高压气体处理设备
公开(公告)号：US5898727A
公开(公告)日：1999-04-27
申请号：US845822
申请日：1997-04-28
申请人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
发明人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
IPC分类号： F27B17/00 , C23C14/58 , H01L21/00 , F27D7/06
CPC分类号： C23C14/5806 , C23C14/5886 , H01L21/67017
摘要： The present invention provides a processing apparatus for eliminating pores in via holes of a silicon semiconductor. The apparatus includes a high-pressure vessel divided into at least two vessel component members in the axial direction thereof, at least one of which has a cooling unit, a frame for holding a load acting in the axial direction of the high-pressure vessel in processing a workpiece to be processed in the high-pressure vessel, an actuator for moving the vessel component members of the high-pressure vessel in the axial direction thereof so as to load and unload the workpiece, a sealing unit fitted to a portion for loading and unloading the workpiece, which is formed when the vessel component members are moved in the axial direction of the vessel, and a retractable cotter unit for transmitting a load acting in the axial direction of the high-pressure vessel to the frame.
摘要翻译：本发明提供一种用于消除硅半导体的通孔中的孔的处理装置。该装置包括在其轴向方向上分成至少两个容器部件的高压容器，其中至少一个具有冷却单元，用于保持在高压容器的轴向方向上作用的负载的框架在高压容器内加工待加工的工件，用于使高压容器的容器部件沿其轴向移动以便加载和卸载工件的致动器，安装到用于装载的部分的密封单元以及卸载当容器部件沿容器的轴向移动时形成的工件，以及用于将在高压容器的轴向方向上作用的负载传递到框架的伸缩开口单元。

6. 发明授权

US06733592B2 High-temperature and high-pressure treatment device 失效
标题翻译：高温高压处理装置
公开(公告)号：US06733592B2
公开(公告)日：2004-05-11
申请号：US10142990
申请日：2002-05-13
申请人： Takao Fujikawa , Yoichi Inoue , Yutaka Narukawa , Takahiko Ishii , Tsuneharu Masuda , Makoto Kadoguchi , Yoshihiko Sakashita
发明人： Takao Fujikawa , Yoichi Inoue , Yutaka Narukawa , Takahiko Ishii , Tsuneharu Masuda , Makoto Kadoguchi , Yoshihiko Sakashita
IPC分类号： C23C1600
CPC分类号： C30B33/005 , H01L21/67109 , Y10S414/135
摘要： The present invention has an object to obtain a small-size, high-temperature and high-pressure treatment device adapted to treat semiconductor wafers. The high-temperature and high-pressure device of the invention is intended to treat semiconductor wafers in an atmosphere of high-temperature and high-pressure gas, and comprises a pressure vessel having at a lower portion thereof an opening for putting the semiconductor wafers in and out, a lower lid disposed so as to be vertically movable for opening and closing the lower opening, wafer transfer means for stacking and unstacking the semiconductor wafers onto and from the lower lid, and a heater attached to the lower lid for heating the semiconductor wafers.
摘要翻译：本发明的目的是获得适于处理半导体晶片的小尺寸，高温和高压处理装置。本发明的高温高压装置旨在在高温高压气体的气氛中处理半导体晶片，并且包括在其下部具有用于将半导体晶片放置在其中的开口的压力容器并且，设置成能够垂直移动以便打开和关闭下部开口的下盖，用于将半导体晶片堆叠和分离到下盖上的晶片传送装置和附接到下盖的加热半导体的加热器晶圆

7. 发明授权

US07080651B2 High pressure processing apparatus and method 失效
标题翻译：高压加工设备及方法
公开(公告)号：US07080651B2
公开(公告)日：2006-07-25
申请号：US10147742
申请日：2002-05-16
申请人： Ikuo Mizobata , Yusuke Muraoka , Kimitsugu Saito , Ryuji Kitakado , Yoichi Inoue , Yoshihiko Sakashita , Katsumi Watanabe , Masahiro Yamagata , Hisanori Oshiba
发明人： Ikuo Mizobata , Yusuke Muraoka , Kimitsugu Saito , Ryuji Kitakado , Yoichi Inoue , Yoshihiko Sakashita , Katsumi Watanabe , Masahiro Yamagata , Hisanori Oshiba
IPC分类号： B08B3/04
CPC分类号： B08B9/0321 , B08B7/0021 , Y10S134/902
摘要： When the hatch of a substrate washing chamber 5 is opened to receive a substrate, certain valves are closed, and one valve is opened, to supply CO2 to purge the substrate washing chamber 5 to and exclude air. When the hatch is closed, another valve is opened to vent substrate washing chamber 5 so that the CO2 expels any gas and unwanted air from the substrate washing chamber 5 and the conduits. Thereafter, supercritical CO2 is used to wash the substrate and clean the circulation line. The flow of supercritical CO2 is sent to the substrate washing chamber 5. After flowing through the circulation line, including a circulation channel 11, it passes through a bypass channel 12 to a decompressor 7. Any chemicals or organic substances left in the circulation line are continuously sent to separation/recovery bath 8 together with the flow.
摘要翻译：当基板清洗室5的开口打开以接收基板时，某些阀关闭，并且一个阀打开以供应CO 2以清洗基板清洗室5并排除空气。当舱口关闭时，打开另一个阀以排放基板清洗室5，使得CO 2从基板清洗室5和导管排出任何气体和不需要的空气。此后，使用超临界CO 2 2洗涤基底并清洁循环线。超临界CO 2 2的流动被送到衬底洗涤室5。在流过包括循环通道11的循环管线之后，它通过旁路通道12到达减压器7。残留在循环管线中的任何化学物质或有机物质与流动一起连续地送到分离/回收槽8中。

8. 发明授权

US07111630B2 High pressure processing apparatus and method 失效
标题翻译：高压加工设备及方法
公开(公告)号：US07111630B2
公开(公告)日：2006-09-26
申请号：US10879318
申请日：2004-06-28
申请人： Ikuo Mizobata , Yusuke Muraoka , Kimitsugu Saito , Ryuji Kitakado , Yoichi Inoue , Yoshihiko Sakashita , Katsumi Watanabe , Masahiro Yamagata , Hisanori Oshiba
发明人： Ikuo Mizobata , Yusuke Muraoka , Kimitsugu Saito , Ryuji Kitakado , Yoichi Inoue , Yoshihiko Sakashita , Katsumi Watanabe , Masahiro Yamagata , Hisanori Oshiba
IPC分类号： B08B3/04
CPC分类号： B08B9/0321 , B08B7/0021 , Y10S134/902
摘要： When the hatch of a substrate washing chamber 5 is opened to receive a substrate, certain valves are closed, and a valve is opened, supply CO2 to purge the substrate washing chamber 5 to and exclude air. When the hatch is closed, another valve is opened to vent substrate washing chamber 5 so that the CO2 expels any gas and unwanted air from the substrate washing chamber 5 and the conduits. Thereafter, super critical CO2 is used to wash the substrate and clean the circulation line. The flow of supercritical CO2 is sent to the substrate washing chamber 5. After flowing through the circulation line, including a circulation channel 11, it passes through a bypass channel 12 to a decompressor 7. Any chemicals or organic substances left in the circulation line are continuously sent to a separation/recover bath 8 together with the flow.
摘要翻译：当基板清洗室5的开口被打开以接收基板时，某些阀关闭，并且阀打开，供应CO 2以清洗基板清洗室5并排除空气。当舱口关闭时，打开另一个阀以排放基板清洗室5，使得CO 2从基板清洗室5和导管排出任何气体和不需要的空气。此后，使用超临界CO 2 2来洗涤基底并清洁循环线。超临界CO 2 2的流动被送到衬底洗涤室5。在流过包括循环通道11的循环管线之后，它通过旁路通道12到达减压器7。残留在循环管线中的任何化学物质或有机物质与流体一起被连续地送到分离/回收槽8中。

9. 发明授权

US06874513B2 High pressure processing apparatus 失效
标题翻译：高压加工设备
公开(公告)号：US06874513B2
公开(公告)日：2005-04-05
申请号：US10123252
申请日：2002-04-17
申请人： Masahiro Yamagata , Hisanori Oshiba , Yoshihiko Sakashita , Yoichi Inoue , Yusuke Muraoka , Kimitsugu Saito , Ikuo Mizobata , Ryuji Kitakado
发明人： Masahiro Yamagata , Hisanori Oshiba , Yoshihiko Sakashita , Yoichi Inoue , Yusuke Muraoka , Kimitsugu Saito , Ikuo Mizobata , Ryuji Kitakado
IPC分类号： H01L21/302 , B08B3/02 , B08B7/00
CPC分类号： B08B7/0021 , B08B3/02 , Y10S134/902
摘要： A high-pressure processing apparatus for removing unnecessary matters on objects to be processed by bringing a high-pressure fluid and a chemical liquid other than the high-pressure fluid into contact with the objects to be processed in a pressurized state is provided with a plurality of high-pressure processing chambers, a common high-pressure fluid supply unit for supplying the high-pressure fluid to each one of the high-pressure processing chambers, a common chemical liquid supply unit for supplying the chemical liquid to the each high-pressure processing chambers, and a separating unit for separating gaseous components from a mixture of the high-pressure fluid and the chemical liquid discharged from the high-pressure processing chambers after the objects are processed.Thus, a high-pressure processing apparatus which has such a compact construction as to be partly installable in a clean room and can stably perform a high-pressure processing can be provided.
摘要翻译：通过使高压流体和高压流体以外的化学液体与加压状态下的被处理物体接触来除去被加工物上的不必要物质的高压处理装置，具有多个的高压处理室，用于将高压流体供给到每个高压处理室的普通高压流体供给单元，用于向每个高压处理室供给化学液体的公共化学液体供给单元处理室，以及分离单元，用于在物体被处理之后从高压流体和从高压处理室排出的化学液体的混合物中分离出气态成分。因此，具有这样的高压处理装置可以提供可部分安装在洁净室中并可稳定地进行高压处理的紧凑结构。

10. 发明授权

US06823880B2 High pressure processing apparatus and high pressure processing method 失效
标题翻译：高压加工设备及高压加工方法
公开(公告)号：US06823880B2
公开(公告)日：2004-11-30
申请号：US10131193
申请日：2002-04-25
申请人： Yoshihiko Sakashita , Katsumi Watanabe , Masahiro Yamagata , Hisanori Oshiba , Shogo Sarumaru , Yusuke Muraoka , Kimitsugu Saito , Ikuo Mizobata , Ryuji Kitakado
发明人： Yoshihiko Sakashita , Katsumi Watanabe , Masahiro Yamagata , Hisanori Oshiba , Shogo Sarumaru , Yusuke Muraoka , Kimitsugu Saito , Ikuo Mizobata , Ryuji Kitakado
IPC分类号： B08B1500
CPC分类号： H01L21/67017 , B08B7/0021 , H01L21/67126 , Y10S134/902
摘要： A high-pressure processing apparatus includes a processing vessel including a processing chamber formed therein to perform a certain process onto an object in the processing chamber; fluid feeding means which feeds a high-pressure fluid into the processing chamber; fluid discharging means which discharges the high-pressure fluid from the processing chamber; an agitating unit which is arranged in the processing chamber and is operative to flow the high-pressure fluid over the object by relative rotation to the processing vessel; a communicating channel which is formed in the processing vessel to communicate inside and outside of the processing chamber; a rotary driving member which is coupled to the agitating unit via a shaft portion provided in the communicating channel; and a sealing portion which is provided between the shaft portion and the processing vessel to disconnect the processing chamber from the rotary driving member. The fluid discharging means includes a fluid discharging port formed in a certain position of the communicating channel closer to the processing chamber than the sealing portion to discharge the high-pressure fluid.
摘要翻译：高压处理装置包括：处理容器，其包括形成在其中的处理室，以对处理室中的物体执行一定的处理; 流体供给装置，其将高压流体供给到处理室中; 从处理室排出高压流体的流体排出装置; 搅拌单元，其布置在处理室中并且可操作以通过相对于处理容器的旋转将高压流体流过物体; 形成在所述处理容器中以在所述处理室内部和外部连通的连通通道; 旋转驱动构件，其经由设置在所述连通通道中的轴部联接到所述搅拌单元; 以及密封部，其设置在所述轴部和所述处理容器之间，以将所述处理室与所述旋转驱动构件断开。流体排出装置包括形成在与密封部分相比更靠近处理室的连通通道的特定位置中以排出高压流体的流体排放口。

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