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    • 8. 发明申请
    • OIL SUPPLY DEVICE OF ENGINE
    • 发动机油供应装置
    • US20110315106A1
    • 2011-12-29
    • US13166665
    • 2011-06-22
    • Akihiro NODATomoya TANAKA
    • Akihiro NODATomoya TANAKA
    • F01M1/06
    • F01L1/185F01L1/2405F01L13/0021F01L2105/00F01M9/10
    • There are provided first and second extending oil passages supplying operational oil to intake-side and exhaust-side lash adjustors, a first connection oil passage interconnecting one end portions of the oil passages, and an oil-pressure control valve selecting a first state in which the first extending oil passage does not connect to a drain oil passage or a second state in which the first extending oil passage connects to the drain oil passage. An orifice is provided in an oil passage which is located on the side of the first connection oil passage relative to a supply portion of the operational oil supplied to the lash adjustor and located on the side of the first connection oil passage relative to another supply portion of the operational oil supplied to the lash adjustor.
    • 设置有第一和第二延伸油路,其向进气侧和排气侧间隙调节器供给操作油,将油路的一端部互连的第一连接油通道和选择第一状态的油压控制阀,其中, 第一延伸油通道不连接到排水油通道或第一延伸油通道连接到排出油通道的第二状态。 在油路中设置有孔,其相对于供给到间隙调节器的操作油的供给部位于第一连接油路的一侧,相对于另一供给部位于第一连接油路的一侧 供应给间隙调节器的操作油。
    • 9. 发明申请
    • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20100081219A1
    • 2010-04-01
    • US12563574
    • 2009-09-21
    • Tomoya TANAKAShin-ichi Imai
    • Tomoya TANAKAShin-ichi Imai
    • H01L21/66
    • H01L22/20H01L22/12H01L2924/0002H01L2924/00
    • In the method of manufacturing a semiconductor device, first, values of diffusion parameters of a semiconductor device are acquired in a middle of manufacturing the semiconductor device. Next, a target value of another diffusion parameter to be determined by a processing implemented in a subsequent process of the semiconductor device manufacturing process is calculated. The another diffusion parameter is calculated by substituting the acquired values of diffusion parameters and a desired value of an electrical characteristic of the semiconductor device into a predetermined prediction expression. The prediction expression is an expression showing a corresponding relationship between the electrical characteristic and a plurality of types of diffusion parameters of the semiconductor device. Subsequently, processing conditions for the processing implemented in the subsequent process to realize the target value is determined. Then, the processing to the semiconductor device in the subsequent process is implemented under the determined processing conditions.
    • 在制造半导体器件的方法中,首先,在制造半导体器件的中间采集半导体器件的扩散参数的值。 接下来,计算通过在半导体器件制造过程的后续处理中实现的处理来确定的另一扩散参数的目标值。 通过将所获得的扩散参数值和半导体器件的电特性的期望值代入预定预测表达式来计算另一扩散参数。 预测表达式是表示电特性和半导体器件的多种扩散参数之间的对应关系的表达式。 随后,确定在后续处理中实现的用于实现目标值的处理的处理条件。 然后,在确定的处理条件下实施对后续处理中的半导体器件的处理。
    • 10. 发明申请
    • PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
    • 半导体器件的生产方法
    • US20090081812A1
    • 2009-03-26
    • US12208740
    • 2008-09-11
    • Tomoya TANAKA
    • Tomoya TANAKA
    • H01L21/66
    • H01L21/76224H01L21/2855H01L21/76843H01L21/76873H01L22/12H01L22/20H01L2924/0002H01L2924/00
    • The present invention is a production method for a semiconductor device equipped with a conductive film with predetermined film thickness on a sidewall of a concave portion formed in an insulating film, and comprises a step of forming the concave portion in the insulation film formed on a semiconductor substrate. Herein, the concave portion is a generic name of a via-hole and a trench. This production method comprises a step of forming a conductive film with film thickness, which is film thickness of a conductive film to be formed in the concave portion, and which is film thickness, calculated based upon the depth of the concave portion and a projected area of the sidewall of said concave portion when viewing the concave portion from the upper surface, and to be formed over the upper surface of the insulating film where the concave portion is formed. In other words, a film is formed taking the variation of configuration of these based upon a projected area of a via-hole or a trench into consideration.
    • 本发明是一种半导体器件的制造方法,该半导体器件在绝缘膜形成的凹部的侧壁上具有规定的膜厚的导电膜,其特征在于,包括在形成于半导体的绝缘膜上形成凹部的工序 基质。 这里,凹部是通孔和沟槽的通用名称。 该制造方法包括以下步骤:形成膜厚度的导电膜,该导电膜是形成在凹部中的导电膜的膜厚,并且是基于凹部的深度计算的膜厚和投影面积 当从上表面观察凹部时,所述凹部的侧壁形成在形成有凹部的绝缘膜的上表面上。 换句话说,考虑到基于通孔或沟槽的投影面积的这些形状的变化形成膜。