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1. 发明授权

US4815854A Method of alignment between mask and semiconductor wafer 失效
标题翻译：掩模和半导体晶片之间的对准方法
公开(公告)号：US4815854A
公开(公告)日：1989-03-28
申请号：US145355
申请日：1988-01-19
申请人： Yoshiharu Tanaka , Eiichi Kouno , Joji Iwata
发明人： Yoshiharu Tanaka , Eiichi Kouno , Joji Iwata
IPC分类号： G03F9/00 , H01L21/68 , G01B9/02
CPC分类号： G03F9/7076 , G03F9/7023 , H01L21/682
摘要： A method of alignment between a mask and a semiconductor wafer is disclosed. At least one linear Fresnel zone plate lens is provided on the mask, and first and second reflecting gratings are provided one the semiconductor wafer. The first reflecting grating includes a plurality of concaves or convexs arranged with a constant pitch P.sub.1, and the second reflecting grating includes a plurality of concaves of convexs arranged with a constant pitch P.sub.2 different from the pitch P.sub.1 in the first reflecting grating. A monochromatic radiation is irradiated on the mask and first and second reflected radiations from the first and second reflecting gratings are detected by first and second detectors, respectively. A difference value between the outputs of the first and second detectors is obtained, and the relative position between the mask and the semiconductor wafer is displaced in accordance with the difference value.
摘要翻译：公开了一种掩模和半导体晶片之间的对准方法。在掩模上提供至少一个线性菲涅耳带平板透镜，并且第一和第二反射光栅设置在半导体晶片之间。第一反射光栅包括以恒定间距P1布置的多个凹凸，并且第二反射光栅包括以与第一反射光栅中的间距P1不同的恒定间距P2布置的多个凸起凹部。单色辐射照射在掩模上，分别由第一和第二检测器检测来自第一和第二反射光栅的第一和第二反射辐射。获得第一和第二检测器的输出之间的差值，并且掩模和半导体晶片之间的相对位置根据差值位移。

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