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1. 发明授权

US5169905A Hydrogenation catalyst composition and process for hydrogenating olefinically unsaturated polymer using the same 失效
标题翻译：氢化催化剂组合物和使用其加氢烯烃不饱和聚合物的方法
公开(公告)号：US5169905A
公开(公告)日：1992-12-08
申请号：US627770
申请日：1990-12-14
申请人： Yoshiharu Hashiguchi , Hideo Katsumata , Kunio Goshima , Toshio Teramoto , Yasuhiko Takemura
发明人： Yoshiharu Hashiguchi , Hideo Katsumata , Kunio Goshima , Toshio Teramoto , Yasuhiko Takemura
IPC分类号： C08F4/642 , B01J31/02 , B01J31/12 , B01J31/14 , B01J31/22 , C08C19/02 , C08F8/04 , C08F36/00 , C08F36/04 , C08F36/06 , C08F297/04
CPC分类号： C08F8/04 , B01J31/0211 , B01J31/12 , B01J31/122 , B01J31/128 , B01J31/143 , B01J31/2295 , C08C19/02 , B01J2231/645 , B01J2531/46 , B01J2531/48
摘要： A hydrogenation catalyst composition comprising, as essential components, (a) at least one bis(cyclopentadienyl)transition metal compound represented by general formula (i): ##STR1## and (b) at least one member selected from the group consisting of complex compounds represented by general formulas (ii) and (iii): ##STR2## and further comprising, if necessary, (c) at least one polar compound selected from the group consisting of ether compounds, thioether compounds, ketone compounds, sulfoxide compounds, carboxylic acid ester compounds, lactone compounds, amine compounds, amide compounds, nitrile compounds and oxime compounds and/or (d) an alkali compound represented by general formula (iv):M.sup.2 OR.sup.7 (iv)The contact of an olefinically unsaturated polymer with hydrogen in the presence of said catalyst composition enables the selective hydrogenation of the olefinic double bonds in said polymer. The thus obtained hydrogenated polymer has excellent weather resistance, heat resistance and oxidation resistance.

2. 发明授权

US5596041A Hydrogenated block copolymer and hydrogenated block copolymer compositon 失效
标题翻译：氢化嵌段共聚物和氢化嵌段共聚物组合物
公开(公告)号：US5596041A
公开(公告)日：1997-01-21
申请号：US414230
申请日：1995-03-31
申请人： Yoshiharu Hashiguchi , Minoru Hasegawa , Kunio Goshima , Yasuhiko Takemura , Yoshiyuki Higuchi , Motokazu Takeuchi
发明人： Yoshiharu Hashiguchi , Minoru Hasegawa , Kunio Goshima , Yasuhiko Takemura , Yoshiyuki Higuchi , Motokazu Takeuchi
IPC分类号： C08F136/06 , C08F297/02 , C08L53/00
CPC分类号： C08F297/023 , C08F136/06 , C08L53/005
摘要： A hydrogenated block copolymer or hydrogenated block copolymer mixture consisting essentially of (a) hydrogenation product of a star-branched block copolymer represented by the structural formula (A-B).sub.n X wherein A is a polybutadiene block having a 1,2-vinyl content of less than 25% by weight and B is a copolymer block containing 50% by weight or more of a conjugated diene compound whose vinyl content is 25% by weight or more, X is a coupling agent residue and n is an integer of 3 or more, and (b) a hydrogenation product of a straight chain block copolymer represented by the structural formula A-B wherein A and B are as defined above, the weight ratio of the component (a) to the component (b) being 100/0 to 5/95, and a hydrogenated block copolymer composition comprising (I) 1 to 99 parts by weight of said hydrogenated block copolymer or hydrogenated block copolymer mixture and (II) 99 to 1 part by weight of a thermoplastic resin and/or a rubbery polymer. Said hydrogenated block copolymer or hydrogenated block copolymer mixture can be pelletized and is excellent in the improving effect on impact resistance, heat resistance, stiffness, processibility and appearance of molded article when used as a quality-improving agent for a thermoplastic resin. Said hydrogenated block copolymer composition is a composition having excellent balance of impact resistance, heat resistance, stiffness, processibility and appearance of molded article or a thermoplastic elastomer having excellent mechanical properties.
摘要翻译：一种氢化嵌段共聚物或氢化嵌段共聚物混合物，主要由（a）由结构式（AB）nX表示的星形支链嵌段共聚物的氢化产物组成，其中A是1,2-乙烯基含量小于 25重量％，B是含有50重量％以上的乙烯基含量为25重量％以上的共轭二烯化合物的共聚物嵌段，X为偶联剂残基，n为3以上的整数，（b）由结构式AB表示的直链嵌段共聚物的氢化产物，其中A和B如上所定义，组分（a）与组分（b）的重量比为100/0至5/95 和氢化嵌段共聚物组合物，其包含（I）1至99重量份所述氢化嵌段共聚物或氢化嵌段共聚物混合物和（II）99至1重量份的热塑性树脂和/或橡胶状聚合物。所述氢化嵌段共聚物或氢化嵌段共聚物混合物可以造粒，并且当用作热塑性树脂的质量改进剂时，其对耐冲击性，耐热性，刚度，加工性和外观的改善效果优异。所述氢化嵌段共聚物组合物是具有优异的机械性能的成型体或热塑性弹性体的耐冲击性，耐热性，刚度，加工性和外观的平衡优异的组合物。

3. 发明授权

US5270274A Catalyst composition for hydrogenating olefinically unsaturated polymers 失效
标题翻译：用于氢化烯属不饱和聚合物的催化剂组合物
公开(公告)号：US5270274A
公开(公告)日：1993-12-14
申请号：US981288
申请日：1992-11-25
申请人： Yoshiharu Hashiguchi , Takashi Ishida , Hiroyuki Sasanuma , Yasuhiko Takemura
发明人： Yoshiharu Hashiguchi , Takashi Ishida , Hiroyuki Sasanuma , Yasuhiko Takemura
IPC分类号： B01J31/22 , C08C19/02 , C08F8/04 , C08F4/60
CPC分类号： B01J31/143 , B01J31/0208 , B01J31/0244 , B01J31/122 , B01J31/2295 , C08C19/02 , C08F8/04 , B01J2231/645 , B01J2531/46 , B01J2531/48 , B01J2531/49 , Y10S526/943
摘要： A catalyst composition comprising: (a) a bis(cyclopentadienyl) transition metal compound, (b) at least one polarized compound selected from the group consisting of carbonyl group-containing compounds and epoxy group containing compounds, and (c) an organic lithium compound. It has a high hydrogenation activity and is useful for hydrogenating olefinically unsaturated polymers for providing the olefinically unsaturated polymers with excellent characteristics as superior weatherability, good heat resistance, superb oxidation resistance, and the like.

4. 发明授权

US09573813B2 Graphite oxide, graphene oxide or graphene, electric device using the same and method of manufacturing the same, and electrodialysis apparatus 有权
标题翻译：石墨氧化物，石墨烯氧化物或石墨烯，使用其的电子装置及其制造方法，以及电渗析装置
公开(公告)号：US09573813B2
公开(公告)日：2017-02-21
申请号：US13551682
申请日：2012-07-18
申请人： Hiroatsu Todoriki , Yasuhiko Takemura , Kuniharu Nomoto
发明人： Hiroatsu Todoriki , Yasuhiko Takemura , Kuniharu Nomoto
IPC分类号： C01B31/00 , B01D61/44 , B01D61/46 , C01B31/04 , B82Y30/00 , B82Y40/00 , H01M4/583 , H01M4/62
CPC分类号： C01B31/043 , B01D61/44 , B01D61/445 , B01D61/46 , B01D2311/04 , B01D2311/18 , B82Y30/00 , B82Y40/00 , C01B31/0476 , C01B32/192 , C01B32/23 , H01M4/583 , H01M4/621 , H01M4/625
摘要： Highly-pure graphite oxide, graphene oxide, or graphene is mass-produced. Graphite is oxidized by an oxidizer, so that a graphite oxide solution is obtained, and electrodialysis is performed on the graphite oxide solution to remove aqueous ions, whereby the purity of graphite oxide is increased. Graphene oxide manufactured using the graphite oxide is mixed with powder, and the mixture is reduced, whereby graphene exhibiting conductive properties is yielded and the powder can be bonded. Such graphene can be used instead of a conduction auxiliary agent or a binder of a variety of batteries.
摘要翻译：大量生产高纯石墨氧化物，氧化石墨烯或石墨烯。石墨由氧化剂氧化，得到氧化石墨溶液，对氧化石墨溶液进行电渗析，除去水分离子，提高石墨氧化物的纯度。使用石墨氧化物制造的石墨烯氧化物与粉末混合，并且将混合物还原，从而产生具有导电性能的石墨烯，并且可以结合粉末。可以使用这样的石墨烯代替各种电池的导电助剂或粘合剂。

5. 发明授权

US09431400B2 Semiconductor memory device and method for manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US09431400B2
公开(公告)日：2016-08-30
申请号：US13359529
申请日：2012-01-27
申请人： Yasuhiko Takemura
发明人： Yasuhiko Takemura
IPC分类号： H01L27/108 , H01L29/786 , G11C11/405 , H01L21/84 , H01L27/12 , H01L21/44 , H01L29/12 , H01L27/02
CPC分类号： H01L27/108 , G11C11/405 , H01L21/84 , H01L27/0207 , H01L27/10814 , H01L27/10852 , H01L27/10876 , H01L27/10885 , H01L27/10894 , H01L27/10897 , H01L27/1203 , H01L27/1207
摘要： A highly integrated DRAM is provided. A bit line is formed over a first insulator, a second insulator is formed over the bit line, third insulators which are in a stripe shape and the like are formed over the second insulator, and a semiconductor region and a gate insulator are formed to cover one of the third insulators. The bit line is connected to the semiconductor region through first contact plugs. Then, a conductive film is formed and subjected to anisotropic etching to form word lines at side surfaces of the third insulators, and a second contact plug is formed to be connected to a capacitor at a top of the one of the third insulators. By synchronizing the word lines, electric charge is accumulated or released through the capacitor. With such a structure, the area of a memory cell can be 4F2.
摘要翻译：提供高度集成的DRAM。在第一绝缘体上形成位线，在位线上形成第二绝缘体，在第二绝缘体上形成条形等的第三绝缘体，形成半导体区域和栅极绝缘体以覆盖第三绝缘子之一。位线通过第一接触插塞连接到半导体区域。然后，形成导电膜并进行各向异性蚀刻以在第三绝缘体的侧表面处形成字线，并且形成第二接触插塞以连接到第三绝缘体之一的顶部的电容器。通过使字线同步，通过电容器蓄积或释放电荷。利用这种结构，存储单元的面积可以是4F2。

6. 发明授权

US09001564B2 Semiconductor device and a method for driving the same 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US09001564B2
公开(公告)日：2015-04-07
申请号：US13532117
申请日：2012-06-25
申请人： Yasuhiko Takemura
发明人： Yasuhiko Takemura
IPC分类号： G11C11/24 , G11C11/401 , H01L27/115 , G11C11/403 , H01L21/8234 , H01L21/8238 , H01L29/49 , H01L29/66 , G11C16/04
CPC分类号： H01L27/1156 , G11C11/403 , G11C16/0433 , H01L21/82345 , H01L21/823842 , H01L29/4966 , H01L29/66545
摘要： It is an object to reduce power consumption of a 2Tr1C type semiconductor memory device. The absolute value of the threshold voltage of a reading transistor is made larger than a fluctuation range of a data potential of a bit line (or the fluctuation range of the data potential of the bit line is made smaller than the absolute value of the threshold voltage of the reading transistor), whereby the potential of a source line can be fixed, a fluctuation in a potential of a writing word line can be made smaller, and a potential of a reading word line is fluctuated only at the time of reading. Further, a gate of such a transistor the absolute value of the threshold voltage of which is large is formed using a material having a high work function, such as indium nitride.
摘要翻译：本发明的目的是降低2Tr1C型半导体存储器件的功耗。使读取晶体管的阈值电压的绝对值大于位线的数据电位的波动范围（或位线的数据电位的波动范围小于阈值电压的绝对值的读取晶体管），由此可以固定源极线的电位，可以使写入字线的电位的波动变小，并且读取字线的电位仅在读取时波动。此外，使用具有高功函数的材料，例如氮化铟，形成这种晶体管的阈值电压大的绝对值的栅极。

7. 发明授权

US08982607B2 Memory element and signal processing circuit 有权
标题翻译：存储元件和信号处理电路
公开(公告)号：US08982607B2
公开(公告)日：2015-03-17
申请号：US13608512
申请日：2012-09-10
申请人： Yasuhiko Takemura
发明人： Yasuhiko Takemura
IPC分类号： G11C11/24 , G11C11/413 , G11C11/40 , G11C11/412
CPC分类号： G11C11/413 , G11C11/24 , G11C11/40 , G11C11/4125
摘要： In a memory element including a pair of inverters, a capacitor which holds data, and a switching element which controls accumulating and releasing of electric charge of the capacitor are provided. For example, one electrode of the capacitor is connected to a first node, which is an input or output terminal of one of the pair of inverters, and the other electrode of the capacitor is connected to one electrode the switching element. The other electrode of the switching element is connected to a second node, which is the output or input terminal of the one of the pair of inverters. With such a connection structure, the absolute value of the potential difference between the first node and the second node at the time of data restoring can be large enough, whereby errors at the time of data restoring can be reduced.
摘要翻译：在包括一对反相器，保持数据的电容器和控制电容器的电荷的累积和释放的开关元件的存储元件中，例如，电容器的一个电极连接到第一节点，第一节点是一对逆变器之一的输入或输出端子，电容器的另一个电极连接到开关元件的一个电极。开关元件的另一个电极连接到作为该对逆变器中的一个的输出端或输入端的第二节点。利用这样的连接结构，数据恢复时的第一节点与第二节点之间的电位差的绝对值可以足够大，从而可以减少数据恢复时的错误。

8. 发明授权

US08513773B2 Capacitor and semiconductor device including dielectric and N-type semiconductor 有权
标题翻译：包括电介质和N型半导体的电容器和半导体器件
公开(公告)号：US08513773B2
公开(公告)日：2013-08-20
申请号：US13346172
申请日：2012-01-09
申请人： Yasuhiko Takemura
发明人： Yasuhiko Takemura
IPC分类号： H01L29/00 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L27/108
CPC分类号： H01L28/91 , H01L21/84 , H01L27/0207 , H01L27/10852 , H01L27/10873 , H01L27/10885 , H01L27/11551 , H01L27/1156 , H01L27/1203 , H01L27/1207
摘要： A capacitor that has an electrode of an n-type semiconductor that is provided in contact with one surface of a dielectric, has a work function of 5.0 eV or higher, preferably 5.5 eV or higher, and includes nitrogen and at least one of indium, tin, and zinc. Since the electrode has a high work function, the dielectric can have a high potential barrier, and thus even when the dielectric is as thin as 10 nm or less, a sufficient insulating property can be maintained. In particular, a striking effect can be obtained when the dielectric is formed of a high-k material.
摘要翻译：具有与电介质的一个表面接触的n型半导体的电极的电容器的功函数为5.0eV以上，优选为5.5eV以上，并且包括氮和铟，锡和锌。由于电极具有高的功函数，所以电介质可以具有高的势垒，因此即使当电介质薄到10nm以下时，也能够维持足够的绝缘性。特别地，当电介质由高k材料形成时，可以获得显着的效果。

9. 发明申请

US20130003441A1 SEMICONDUCTOR DEVICE AND A METHOD FOR DRIVING THE SAME 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20130003441A1
公开(公告)日：2013-01-03
申请号：US13532117
申请日：2012-06-25
申请人： Yasuhiko Takemura
发明人： Yasuhiko Takemura
IPC分类号： G11C11/24
CPC分类号： H01L27/1156 , G11C11/403 , G11C16/0433 , H01L21/82345 , H01L21/823842 , H01L29/4966 , H01L29/66545
摘要： It is an object to reduce power consumption of a 2Tr1C type semiconductor memory device. The absolute value of the threshold voltage of a reading transistor is made larger than a fluctuation range of a data potential of a bit line (or the fluctuation range of the data potential of the bit line is made smaller than the absolute value of the threshold voltage of the reading transistor), whereby the potential of a source line can be fixed, a fluctuation in a potential of a writing word line can be made smaller, and a potential of a reading word line is fluctuated only at the time of reading. Further, a gate of such a transistor the absolute value of the threshold voltage of which is large is formed using a material having a high work function, such as indium nitride.
摘要翻译：本发明的目的是降低2Tr1C型半导体存储器件的功耗。使读取晶体管的阈值电压的绝对值大于位线的数据电位的波动范围（或位线的数据电位的波动范围小于阈值电压的绝对值的读取晶体管），由此可以固定源极线的电位，可以使写入字线的电位的波动变小，并且读取字线的电位仅在读取时波动。此外，使用具有高功函数的材料，例如氮化铟，形成这种晶体管的阈值电压大的绝对值的栅极。

10. 发明授权

US08339562B2 Electro-optical device and method for manufacturing the same 失效
公开(公告)号：US08339562B2
公开(公告)日：2012-12-25
申请号：US12582762
申请日：2009-10-21
申请人： Shunpei Yamazaki , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： G02F1/1345 , G02F1/1368
CPC分类号： H01L29/4908 , H01L27/1255 , H01L29/42384 , H01L2224/48091 , H01L2224/48464 , H01L2224/73204 , H01L2924/00014
摘要： Using thin film transistors (TFTs), an active matrix circuit, a driver circuit for driving the active matrix circuit or the like are formed on one substrate. Circuits such as a central processing unit (CPU) and a memory, necessary to drive an electric device, are formed using single crystalline semiconductor integrated circuit chips. After the semiconductor integrated circuit chips are adhered to the substrate, the chips are connected with wirings formed on the substrate by a chip on glass (COG) method, a wire bonding method or the like, to manufacture the electric device having a liquid crystal display (LCD) on one substrate.

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