专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070041530A1 Communication device and communication method 有权
标题翻译：通信设备和通信方式
公开(公告)号：US20070041530A1
公开(公告)日：2007-02-22
申请号：US11500440
申请日：2006-08-08
申请人： Yoshifumi Tanimoto , Yasushi Yamazaki
发明人： Yoshifumi Tanimoto , Yasushi Yamazaki
IPC分类号： H04M11/00
CPC分类号： H04N1/00214 , H04M11/066 , H04N1/00217 , H04N1/32702 , H04N1/32795 , H04N2201/0093
摘要： A communication device and a communication method capable of transmitting data after confirming a destination device in one SMTP communication. A transmitter communication device carries out a communication request to a recipient communication device and SMTP communication is started. The recipient communication device transmits information of a recipient stored in a storage unit to the transmitter communication device under a prescribed procedure. Before receiving the data, the recipient communication device suspends the communication protocol with a communication channel maintained. The transmitter communication device displays the received information of the recipient on a display unit, and suspends the communication protocol with the communication channel maintained. Accordingly, a user can confirm a transmission destination from the display. After confirming the transmission destination, the user instructs to transmit the data. Accordingly, the communication protocol is continued and the data can be transmitted.
摘要翻译：一种能够在一个SMTP通信中确认目的地设备之后传送数据的通信设备和通信方法。发射机通信设备向接收者通信设备执行通信请求，并且开始SMTP通信。收件人通信装置根据规定的程序将存储在存储单元中的接收者的信息发送到发送器通信装置。在接收到数据之前，接收者通信设备在保持通信信道的情况下暂停通信协议。发射机通信设备在显示单元上显示接收到的接收到的信息，并且保持通信信道的通信协议。因此，用户可以从显示器确认发送目的地。确认发送目的地后，用户指示发送数据。因此，继续通信协议并且可以发送数据。

2. 发明授权

US07848497B2 Communication device and communication method 有权
标题翻译：通信设备和通信方式
公开(公告)号：US07848497B2
公开(公告)日：2010-12-07
申请号：US11500440
申请日：2006-08-08
申请人： Yoshifumi Tanimoto , Yasushi Yamazaki
发明人： Yoshifumi Tanimoto , Yasushi Yamazaki
IPC分类号： H04M11/00
CPC分类号： H04N1/00214 , H04M11/066 , H04N1/00217 , H04N1/32702 , H04N1/32795 , H04N2201/0093
摘要： A communication device and a communication method capable of transmitting data after confirming a destination device in one SMTP communication. A transmitter communication device carries out a communication request to a recipient communication device and SMTP communication is started. The recipient communication device transmits information of a recipient stored in a storage unit to the transmitter communication device under a prescribed procedure. Before receiving the data, the recipient communication device suspends the communication protocol with a communication channel maintained. The transmitter communication device displays the received information of the recipient on a display unit, and suspends the communication protocol with the communication channel maintained. Accordingly, a user can confirm a transmission destination from the display. After confirming the transmission destination, the user instructs to transmit the data. Accordingly, the communication protocol is continued and the data can be transmitted.
摘要翻译：一种能够在一个SMTP通信中确认目的地设备之后传送数据的通信设备和通信方法。发射机通信设备向接收者通信设备执行通信请求，并且开始SMTP通信。收件人通信装置根据规定的程序将存储在存储单元中的接收者的信息发送到发送器通信装置。在接收到数据之前，接收者通信设备在保持通信信道的情况下暂停通信协议。发射机通信设备在显示单元上显示接收到的接收到的信息，并且保持通信信道的通信协议。因此，用户可以从显示器确认发送目的地。确认发送目的地后，用户指示发送数据。因此，继续通信协议并且可以发送数据。

3. 发明授权

US08497562B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US08497562B2
公开(公告)日：2013-07-30
申请号：US13180211
申请日：2011-07-11
申请人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
发明人： Yukimasa Ishida , Takashi Sato , Yasushi Yamazaki
IPC分类号： H01L31/102 , H01L27/148 , G01T1/24
CPC分类号： H01L27/14658
摘要： A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.
摘要翻译：提供一种固态图像拾取装置，其包括基板; 形成在基板上的晶体管; 光电转换元件，包括连接到晶体管的漏极或源极的第一电极，堆叠在第一电极上的半导体层和堆叠在半导体层上的第二电极; 设置在所述第二电极上的绝缘层; 以及形成在绝缘层上的与绝缘层至少包含无机绝缘膜连接的绝缘层上的偏置线，偏置线经由形成在绝缘层中的接触孔连接到第二电极，并且半导体层的侧表面与无机绝缘膜接触。

4. 发明授权

US07956313B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US07956313B2
公开(公告)日：2011-06-07
申请号：US12422616
申请日：2009-04-13
申请人： Takashi Sato , Yukimasa Ishida , Yasushi Yamazaki
发明人： Takashi Sato , Yukimasa Ishida , Yasushi Yamazaki
IPC分类号： H01L27/00
CPC分类号： H01L27/14609 , H01L27/14603 , H04N5/374
摘要： There is provided a solid-state image pickup device that has a plurality of scanning lines that extends in a predetermined direction, a plurality of data lines that extends in a direction for intersecting the scanning lines, and a plurality of bias lines within an image pickup area on a substrate. For each of a plurality of pixels disposed in positions corresponding to intersections of the plurality of scanning lines and the plurality of data lines, a field effect transistor that is controlled by the scanning line and a photoelectric conversion element that has a electrode electrically connected to the data line through the field effect transistor and a electrode electrically connected to the bias line are formed, and a constant electric potential line for electrostatic protection is formed on the substrate. For each of bias lines, a bias line electrostatic protection circuit having a protection diode.
摘要翻译：提供了一种固态图像拾取装置，其具有沿预定方向延伸的多条扫描线，沿与扫描线相交的方向延伸的多条数据线，以及在图像拾取器内的多条偏置线基底上的区域。对于设置在与多条扫描线和多条数据线的交点对应的位置的多个像素中的每一个，由扫描线控制的场效应晶体管和具有电连接到该扫描线的电极的光电转换元件形成通过场效应晶体管的数据线和电连接到偏置线的电极，并且在基板上形成用于静电保护的恒定电位线。对于每个偏置线，具有保护二极管的偏置线静电保护电路。

5. 发明授权

US07928941B2 Electro-optical device, driving circuit and electronic apparatus 有权
标题翻译：电光装置，驱动电路和电子设备
公开(公告)号：US07928941B2
公开(公告)日：2011-04-19
申请号：US12000754
申请日：2007-12-17
申请人： Katsunori Yamazaki , Yasushi Yamazaki
发明人： Katsunori Yamazaki , Yasushi Yamazaki
IPC分类号： G09G3/34
CPC分类号： G09G3/3677 , G09G3/2011 , G09G3/3614 , G09G3/3655 , G09G2300/0876 , G09G2310/0283 , G09G2330/021
摘要： It is possible to suppress the voltage amplitudes of data lines and to prevent deterioration in display quality by a simple configuration.Each of pixels 110 includes a pixel capacitor and a storage capacitor of which one end is connected to a pixel electrode and the other end is connected to each capacitive line 132. If first, second, third, . . . , 320th, and 321st scanning lines 112 are sequentially selected, the capacitive line 132 of each row is provided with TFTs 152, 154, 156 and 158. A source electrode of the TFT 156 of a first row is connected to a first feed line 165 and a gate electrode thereof is connected to a first scanning line 112. A source electrode of the TFT 158 is connected to a second feed line 167 and a gate electrode thereof is connected to a common drain electrode of the TFTs 152 and 154. The drain electrodes of the TFT 156 and 158 are connected to the first capacitive line 132. A gate electrode of the TFT 152 is connected to a second scanning line 112.
摘要翻译：可以通过简单的配置来抑制数据线的电压振幅和防止显示质量的劣化。每个像素110包括像素电容器和存储电容器，其一端连接到像素电极，另一端连接到每个电容线132.如果是第一，第二，第三，。。，第320和第321扫描线112，每行的电容线132设置有TFT 152,154,156和158.第一行的TFT 156的源电极连接到第一馈电线165 其栅电极连接到第一扫描线112. TFT 158的源电极连接到第二馈电线167，其栅电极连接到TFT 152和154的公共漏电极。漏极 TFT 156和158的电极连接到第一电容线132.TFT 152的栅电极连接到第二扫描线112。

6. 发明授权

US07659571B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07659571B2
公开(公告)日：2010-02-09
申请号：US11445236
申请日：2006-06-02
申请人： Yasushi Yamazaki
发明人： Yasushi Yamazaki
IPC分类号： H01L29/94
CPC分类号： H01L29/7834 , H01L21/28052 , H01L27/10876 , H01L29/66621 , H01L29/66628
摘要： A semiconductor device is provide with a semiconductor substrate, a groove formed in the semiconductor substrate, a gate insulting film formed on the inner wall of the groove, a gate electrode formed in the groove, and a source/drain region and an LDD region arranged in the direction that is substantially orthogonal to the substrate surface of the semiconductor substrate.
摘要翻译：半导体器件设置有半导体衬底，形成在半导体衬底中的沟槽，形成在沟槽的内壁上的栅极绝缘膜，形成在沟槽中的栅电极，以及源极/漏极区域和布置成LDD区域的LDD区域在基本上正交于半导体衬底的衬底表面的方向上。

7. 发明授权

US07465637B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07465637B2
公开(公告)日：2008-12-16
申请号：US11520696
申请日：2006-09-14
申请人： Yasushi Yamazaki
发明人： Yasushi Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L29/66621 , H01L27/10876 , H01L29/1083 , H01L29/66659 , H01L29/78
摘要： A method for manufacturing a semiconductor device comprises the steps of forming a gate trench in a semiconductor substrate, forming a gate insulation film in an inner wall of the gate trench, filling a gate electrode material into at least an inside of the gate trench, forming a gate electrode by patterning the gate electrode material, and selectively forming a punch-through stopper region prior to patterning the gate electrode material, using a mask in a prescribed position of the semiconductor substrate that is adjacent to the gate trench. The step for forming the punch-through stopper region may be performed subsequent to the step for filling the gate electrode material into the gate trench, or may be performed prior to the step for forming the gate trench.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底中形成栅极沟槽，在栅极沟槽的内壁中形成栅极绝缘膜，将栅电极材料填充到栅极沟槽的至少内部，形成通过对栅电极材料进行构图而形成栅电极，并且在栅极电极材料图案化之前，使用与栅极沟槽相邻的半导体衬底的规定位置的掩模来选择性地形成穿通阻挡区域。用于形成穿通阻止区域的步骤可以在用于将栅电极材料填充到栅极沟槽中的步骤之后进行，或者可以在用于形成栅极沟槽的步骤之前进行。

8. 发明申请

US20060273388A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060273388A1
公开(公告)日：2006-12-07
申请号：US11445236
申请日：2006-06-02
申请人： Yasushi Yamazaki
发明人： Yasushi Yamazaki
IPC分类号： H01L29/94
CPC分类号： H01L29/7834 , H01L21/28052 , H01L27/10876 , H01L29/66621 , H01L29/66628
摘要： A semiconductor device is provide with a semiconductor substrate, a groove formed in the semiconductor substrate, a gate insulting film formed on the inner wall of the groove, a gate electrode formed in the groove, and a source/drain region and an LDD region arranged in the direction that is substantially orthogonal to the substrate surface of the semiconductor substrate.
摘要翻译：半导体器件设置有半导体衬底，形成在半导体衬底中的沟槽，形成在沟槽的内壁上的栅极绝缘膜，形成在沟槽中的栅电极，以及源极/漏极区域和布置成LDD区域的LDD区域在基本上正交于半导体衬底的衬底表面的方向上。

9. 发明授权

US07009671B2 Liquid crystal device, projection display device and, manufacturing method for substrate for liquid crystal device 有权
标题翻译：液晶装置，投影显示装置及液晶装置用基板的制造方法
公开(公告)号：US07009671B2
公开(公告)日：2006-03-07
申请号：US10808354
申请日：2004-03-25
申请人： Takaaki Tanaka , Yasushi Yamazaki
发明人： Takaaki Tanaka , Yasushi Yamazaki
IPC分类号： G02F1/1337
CPC分类号： G02F1/133734 , G02F1/133753
摘要： A liquid crystal device has inorganic alignment layers (36, 42) disposed on a surface of a liquid crystal layer side of a pair of the substrates, when the range of the average pre-tilt angle θ of liquid crystal molecules 50a of the liquid crystal layer is 5 degrees ≦θ≦20 degrees, twist angle φ of the liquid crystal molecules (50a) of the liquid crystal layer, cell gap d, and helical pitch P of the liquid crystal molecules of the liquid crystal layer satisfy the relationship of (0.6/360)φ 20 degrees, twist angle φ of the liquid crystal molecules (50a) of the liquid crystal layer, cell gap d, and helical pitch P of the liquid crystal molecules of the liquid crystal layer satisfy the relationship of (0.8/360)φ
摘要翻译：当液体的液晶分子的平均预倾角θ的范围为液体时，液晶装置具有设置在一对基板的液晶层侧的表面上的无机配向层（36,42）晶体层的液晶层的液晶分子（50a）的扭转角度phi，液晶层的液晶分子的间隙d和螺旋间距P在5°<θθ= 20°时满足（0.6 / 360）phi 20度时，液晶层的液晶分子（50a）的扭曲角度phi，液晶层的液晶分子的间隙d和螺旋间距P满足（0.8 / 360）phi

10. 发明申请

US20050171778A1 Voice synthesizer, voice synthesizing method, and voice synthesizing system 有权
标题翻译：语音合成器，语音合成方法和语音合成系统
公开(公告)号：US20050171778A1
公开(公告)日：2005-08-04
申请号：US11063758
申请日：2005-02-23
申请人： Hitoshi Sasaki , Yasushi Yamazaki , Yasuji Ota , Kaori Endo , Nobuyuki Katae , Kazuhiro Watanabe
发明人： Hitoshi Sasaki , Yasushi Yamazaki , Yasuji Ota , Kaori Endo , Nobuyuki Katae , Kazuhiro Watanabe
IPC分类号： G10L13/08 , G10L13/00
CPC分类号： G10L13/08 , G10L13/04 , G10L13/10
摘要： In the voice synthesizer, which obtains a voice by emphasizing a specific part of a sentence, an emphasis degree deciding unit extracts a word or a collocation to be emphasized from among respective words or respective collocations on the basis of an extracting reference with respect to the each word or the each collocation included in a sentence and deciding an emphasis degree of the extracted word or the extracted collocation. An acoustic processing unit synthesizes a voice having an emphasis degree that is decided by the emphasis degree deciding unit provided to the word to be emphasized or the collocation to be emphasized. Whereby the emphasized part of the word or the collocation can be obtained automatically on the basis of the extracting reference such as a frequency of appearance and a level of importance of the word or the collocation, further, improves an operation-ability.
摘要翻译：在通过强调句子的特定部分而获得声音的语音合成器中，强调度判定单元基于相对于所述句子的提取参考，从各个单词或各个搭配中提取要强调的单词或搭配每个单词或包括在句子中的每个搭配，并且确定提取的单词或提取的搭配的强调程度。声学处理单元合成由强调判定单元确定的强调程度的声音，该强调度决定单元被提供给要强调的单词或要强调的搭配。由此，可以在提取参考的基础上自动获得字词或搭配的强调部分，例如出现频率，字词或搭配的重要程度，进一步提高操作能力。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式