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1. 发明申请

US20070023275A1 Controllable target cooling 有权
标题翻译：可控制目标冷却
公开(公告)号：US20070023275A1
公开(公告)日：2007-02-01
申请号：US11190389
申请日：2005-07-27
申请人： Yoshiaki Tanase , Makoto Inagawa , Akihiro Hosokawa
发明人： Yoshiaki Tanase , Makoto Inagawa , Akihiro Hosokawa
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C14/3407 , H01J37/3408 , H01J37/3497 , Y10T29/49826
摘要： A sputter target assembly particularly useful for a large panel plasma sputter reactor having a target assembly sealed both to the main processing chamber and a vacuum pumped chamber housing a moving magnetron. The target assembly to which target tiles are bonded includes an integral plate with parallel cooling holes drilled parallel to the principal faces. The ends of the holes may be sealed and vertically extending slots arranged in two staggered groups on each side and machined down to respective pairs of cooling holes on opposite sides of the backing plate in pairs. Four manifolds tubes are sealed to the four groups of slots and provide counter-flowing coolant paths.
摘要翻译：特别适用于具有密封于主处理室的目标组件和容纳移动磁控管的真空抽吸室的大型面板等离子体溅射反应器的溅射靶组件。目标瓦片被粘合到的目标组件包括具有平行于主面钻出的平行冷却孔的整体板。孔的端部可以是密封的，并且垂直延伸的槽在每侧上布置成两个交错的组，并且被成对地加工成在背板的相对侧上的相应的一对冷却孔。四个歧管管被密封到四组槽，并提供反向流动的冷却剂路径。

2. 发明申请

US20120175250A1 Target Cooling Through Gun Drilled Holes 审中-公开
标题翻译：目标通过枪钻孔冷却
公开(公告)号：US20120175250A1
公开(公告)日：2012-07-12
申请号：US13420996
申请日：2012-03-15
申请人： Yoshiaki Tanase , Makoto Inagawa , Akihiro Hosokawa
发明人： Yoshiaki Tanase , Makoto Inagawa , Akihiro Hosokawa
IPC分类号： C23C14/34 , B23P11/00
CPC分类号： C23C14/3407 , H01J37/3408 , H01J37/3497 , Y10T29/49826
摘要： A sputter target assembly particularly useful for a large panel plasma sputter reactor having a target assembly sealed both to the main processing chamber and a vacuum pumped chamber housing a moving magnetron. The target assembly to which target tiles are bonded includes an integral plate with parallel cooling holes drilled parallel to the principal faces. The ends of the holes may be sealed and vertically extending slots arranged in two staggered groups on each side and machined down to respective pairs of cooling holes on opposite sides of the backing plate in pairs. Four manifolds tubes are sealed to the four groups of slots and provide counter-flowing coolant paths.
摘要翻译：特别适用于具有密封于主处理室的目标组件和容纳移动磁控管的真空抽吸室的大型面板等离子体溅射反应器的溅射靶组件。目标瓦片被粘合到的目标组件包括具有平行于主面钻出的平行冷却孔的整体板。孔的端部可以是密封的，并且垂直延伸的槽在每侧上布置成两个交错的组，并且被成对地加工成在背板的相对侧上的相应的一对冷却孔。四个歧管管被密封到四组槽，并提供反向流动的冷却剂路径。

3. 发明授权

US10294559B2 Target cooling through gun drilled holes 有权
公开(公告)号：US10294559B2
公开(公告)日：2019-05-21
申请号：US13420996
申请日：2012-03-15
申请人： Yoshiaki Tanase , Makoto Inagawa , Akihiro Hosokawa
发明人： Yoshiaki Tanase , Makoto Inagawa , Akihiro Hosokawa
IPC分类号： C23C14/34 , H01J37/34
摘要： A sputter target assembly particularly useful for a large panel plasma sputter reactor having a target assembly sealed both to the main processing chamber and a vacuum pumped chamber housing a moving magnetron. The target assembly to which target tiles are bonded includes an integral plate with parallel cooling holes drilled parallel to the principal faces. The ends of the holes may be sealed and vertically extending slots arranged in two staggered groups on each side and machined down to respective pairs of cooling holes on opposite sides of the backing plate in pairs. Four manifolds tubes are sealed to the four groups of slots and provide counter-flowing coolant paths.

4. 发明授权

US08182661B2 Controllable target cooling 有权
标题翻译：可控制目标冷却
公开(公告)号：US08182661B2
公开(公告)日：2012-05-22
申请号：US11190389
申请日：2005-07-27
申请人： Yoshiaki Tanase , Makoto Inagawa , Akihiro Hosokawa
发明人： Yoshiaki Tanase , Makoto Inagawa , Akihiro Hosokawa
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/3408 , H01J37/3497 , Y10T29/49826
摘要： A sputter target assembly particularly useful for a large panel plasma sputter reactor having a target assembly sealed both to the main processing chamber and a vacuum pumped chamber housing a moving magnetron. The target assembly to which target tiles are bonded includes an integral plate with parallel cooling holes drilled parallel to the principal faces. The ends of the holes may be sealed and vertically extending slots arranged in two staggered groups on each side and machined down to respective pairs of cooling holes on opposite sides of the backing plate in pairs. Four manifolds tubes are sealed to the four groups of slots and provide counter-flowing coolant paths.
摘要翻译：特别适用于具有密封于主处理室的目标组件和容纳移动磁控管的真空抽吸室的大型等离子体溅射反应器的溅射靶组件。目标瓦片被粘合到的目标组件包括具有平行于主面钻出的平行冷却孔的整体板。孔的端部可以是密封的，并且垂直延伸的槽在每侧上布置成两个交错的组，并且被成对地加工成在背板的相对侧上的相应的一对冷却孔。四个歧管管被密封到四组槽，并提供反向流动的冷却剂路径。

5. 发明申请

US20060283705A1 Electron beam welding of sputtering target tiles 失效
标题翻译：溅射靶砖的电子束焊接
公开(公告)号：US20060283705A1
公开(公告)日：2006-12-21
申请号：US11245590
申请日：2005-10-07
申请人： Yoshiaki Tanase , Akihiro Hosokawa
发明人： Yoshiaki Tanase , Akihiro Hosokawa
IPC分类号： B23K26/20 , B23K15/00
CPC分类号： B23K26/24 , B23K15/0093 , B23K15/06 , B23K20/122 , B23K20/129 , C23C14/3414
摘要： Embodiments of the invention provide a method of welding sputtering target tiles to form a large sputtering target. Embodiments of a sputtering target assembly with welded sputtering target tiles are also provided. In one embodiment, a method for welding sputtering target tiles in an electron beam welding chamber comprises providing strips or powder of sputtering target material on a pre-determined at least one interfacial line between at least two sputtering target tiles, that are yet to be placed, on a surface of support, placing the at least two sputtering target tiles side by side with edges of the at least two sputtering target tiles abutting and forming at least one interfacial line on top of the strips or powder of sputtering target material, pumping out the gas in the electron beam welding chamber, preheating the at least two sputtering target tiles and the strips or powder of sputtering target material to a pre-heat temperature less than the temperature at which the at least two target tiles begin to melt, undergo a change in physical state, or undergo substantial decomposition, and welding the at least two sputtering target tiles placed side by side into a large sputtering target.
摘要翻译：本发明的实施例提供了一种焊接溅射靶砖以形成大型溅射靶的方法。还提供了具有焊接溅射靶瓦的溅射靶组件的实施例。在一个实施例中，用于在电子束焊接室中焊接溅射靶瓦的方法包括在至少两个尚未被放置的溅射靶瓦之间的预定的至少一个界面线上提供溅射靶材料的条带或粉末在支撑体的表面上，将至少两个溅射靶瓦并排放置在所述至少两个溅射靶瓷砖的边缘邻接并且在溅射靶材料的条或粉末的顶部上形成至少一个界面线，泵出电子束焊接室中的气体，将至少两个溅射靶砖和溅射靶材料的条或粉末预热至小于至少两个靶砖开始熔化的温度的预热温度，经历物理状态的变化或者经历显着的分解，并将至少两个并排放置的溅射靶砖焊接到大的溅射靶中。

6. 发明授权

US07652223B2 Electron beam welding of sputtering target tiles 失效
标题翻译：溅射靶砖的电子束焊接
公开(公告)号：US07652223B2
公开(公告)日：2010-01-26
申请号：US11245590
申请日：2005-10-07
申请人： Yoshiaki Tanase , Akihiro Hosokawa
发明人： Yoshiaki Tanase , Akihiro Hosokawa
IPC分类号： B23K26/20 , B23K15/00 , B23K1/20
CPC分类号： B23K26/24 , B23K15/0093 , B23K15/06 , B23K20/122 , B23K20/129 , C23C14/3414
摘要： Embodiments of the invention provide a method of welding sputtering target tiles to form a large sputtering target. Embodiments of a sputtering target assembly with welded sputtering target tiles are also provided. In one embodiment, a method for welding sputtering target tiles in an electron beam welding chamber comprises providing strips or powder of sputtering target material on a pre-determined at least one interfacial line between at least two sputtering target tiles, that are yet to be placed, on a surface of support, placing the at least two sputtering target tiles side by side with edges of the at least two sputtering target tiles abutting and forming at least one interfacial line on top of the strips or powder of sputtering target material, pumping out the gas in the electron beam welding chamber, preheating the at least two sputtering target tiles and the strips or powder of sputtering target material to a pre-heat temperature less than the temperature at which the at least two target tiles begin to melt, undergo a change in physical state, or undergo substantial decomposition, and welding the at least two sputtering target tiles placed side by side into a large sputtering target.
摘要翻译：本发明的实施例提供了一种焊接溅射靶砖以形成大型溅射靶的方法。还提供了具有焊接溅射靶瓦的溅射靶组件的实施例。在一个实施例中，用于在电子束焊接室中焊接溅射靶瓦的方法包括在至少两个尚未被放置的溅射靶瓦之间的预定的至少一个界面线上提供溅射靶材料的条带或粉末在支撑体的表面上，将至少两个溅射靶瓦并排放置在所述至少两个溅射靶瓷砖的边缘邻接并且在溅射靶材料的条或粉末的顶部上形成至少一个界面线，泵出电子束焊接室中的气体，将至少两个溅射靶砖和溅射靶材料的条或粉末预热至小于至少两个靶砖开始熔化的温度的预热温度，经历物理状态的变化或者经历显着的分解，并将至少两个并排放置的溅射靶砖焊接到大的溅射靶中。

7. 发明申请

US20050274923A1 Curved slit valve door 失效
标题翻译：弯曲的狭缝阀门
公开(公告)号：US20050274923A1
公开(公告)日：2005-12-15
申请号：US10867100
申请日：2004-06-14
申请人： Yoshiaki Tanase , Billy Leung , Gregory Lewis , David Berkstresser
发明人： Yoshiaki Tanase , Billy Leung , Gregory Lewis , David Berkstresser
IPC分类号： F16K1/16 , F16K1/226 , F16K1/24 , F16K51/02
CPC分类号： F16K51/02 , F16K1/2261 , F16K1/24
摘要： Embodiments of an apparatus for sealing a substrate transfer passage in a chamber are provided. In on embodiment, an apparatus for sealing a substrate transfer passage in a chamber includes an elongated door member having a convex sealing face and a backside. In another embodiment, a chamber having an apparatus for sealing a substrate transfer passage is provided that includes a chamber body having an interior volume, at least one substrate access defined through the chamber body configured to allow passage of a large area substrate therethrough, and a door member having a convex sealing face moveable between a first position that covers the substrate transfer port and a second position clear of the substrate transfer port. In yet another embodiment, the chamber body may be a load lock chamber.
摘要翻译：提供了用于密封腔室中的基底输送通道的装置的实施例。在一个实施例中，用于密封腔室中的基底传送通道的装置包括具有凸形密封面和背面的细长门构件。在另一个实施例中，提供了具有用于密封基板传送通道的设备的室，其包括具有内部容积的室主体，通过室主体限定的至少一个基板通路，其被构造成允许大面积基板通过其中，门构件具有可在覆盖衬底传送端口的第一位置和离开衬底传送端口的第二位置之间移动的凸形密封面。在另一个实施例中，室主体可以是装载锁定室。

8. 发明授权

US07575220B2 Curved slit valve door 失效
标题翻译：弯曲的狭缝阀门
公开(公告)号：US07575220B2
公开(公告)日：2009-08-18
申请号：US10867100
申请日：2004-06-14
申请人： Yoshiaki Tanase , Billy C. Leung , Gregory S. Lewis , David E. Berkstresser
发明人： Yoshiaki Tanase , Billy C. Leung , Gregory S. Lewis , David E. Berkstresser
IPC分类号： F16K25/00
CPC分类号： F16K51/02 , F16K1/2261 , F16K1/24
摘要： Embodiments of an apparatus for sealing a substrate transfer passage in a chamber are provided. In one embodiment, an apparatus for sealing a substrate transfer passage in a chamber includes an elongated door member having a convex sealing face and a backside. In another embodiment, a chamber having an apparatus for sealing a substrate transfer passage is provided that includes a chamber body having an interior volume, at least one substrate access defined through the chamber body configured to allow passage of a large area substrate therethrough, and a door member having a convex sealing face moveable between a first position that covers the substrate transfer port and a second position clear of the substrate transfer port. In yet another embodiment, the chamber body may be a load lock chamber.
摘要翻译：提供了用于密封腔室中的基底输送通道的装置的实施例。在一个实施例中，用于密封腔室中的衬底传送通道的设备包括具有凸密封面和背面的细长门构件。在另一个实施例中，提供了具有用于密封基板传送通道的设备的室，其包括具有内部容积的室主体，通过室主体限定的至少一个基板通路，其被构造成允许大面积基板通过其中，门构件具有可在覆盖衬底传送端口的第一位置和离开衬底传送端口的第二位置之间移动的凸形密封面。在另一个实施例中，室主体可以是装载锁定室。

9. 发明授权

US07282097B2 Slit valve door seal 失效
标题翻译：狭缝阀门密封
公开(公告)号：US07282097B2
公开(公告)日：2007-10-16
申请号：US10867344
申请日：2004-06-14
申请人： Yoshiaki Tanase , William Norman Sterling , Paul Andrew Haworth
发明人： Yoshiaki Tanase , William Norman Sterling , Paul Andrew Haworth
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , F16J15/02
CPC分类号： F16K1/2261 , F16K1/24 , F16K51/02 , H01L21/67126 , Y10S277/91
摘要： Embodiments of the invention generally provide a slit valve door seal. In one embodiment, a slit valve door seal includes a ring-shaped base having a center axis and at least one finger extending from the base. The finger is oriented substantially parallel to the center axis, wherein the base and the finger define a single, one-piece seal member. The seal is particularly suitable for using in sealing substrate access passages formed in load lock chambers.
摘要翻译：本发明的实施例通常提供狭缝阀门密封件。在一个实施例中，狭缝阀门密封件包括具有中心轴线的环形基座和从基座延伸的至少一根手指。手指基本上平行于中心轴线定向，其中基部和手指限定单个单件密封构件。该密封特别适合于在装载锁定室中形成的密封基板通路中使用。

10. 发明申请

US20050095088A1 Load lock chamber for large area substrate processing system 有权
标题翻译：负载锁定室用于大面积基板处理系统
公开(公告)号：US20050095088A1
公开(公告)日：2005-05-05
申请号：US10832795
申请日：2004-04-26
申请人： Shinichi Kurita , Wendell Blonigan , Yoshiaki Tanase
发明人： Shinichi Kurita , Wendell Blonigan , Yoshiaki Tanase
IPC分类号： B65G49/00 , B65G49/06 , H01L21/00 , H01L21/677 , H01L21/68 , B65G1/00
CPC分类号： H01L21/67201 , B65G49/064 , B65G49/067 , B65G49/068 , B65G2249/02 , H01L21/67236 , Y10S414/136 , Y10S414/137 , Y10S414/139
摘要： A load lock chamber and method for transferring large area substrates is provided. In one embodiment, a load lock chamber suitable for transferring large area substrates includes a plurality of vertically stacked single substrate transfer chambers. The configuration of vertically stacked single substrate transfer chambers contributes to reduced size and greater throughput as compared to conventional state of the art, dual slot dual substrate designs. Moreover, the increased throughput has been realized at reduced pumping and venting rates, which corresponds to reduced probability of substrate contamination due to particulates and condensation.
摘要翻译：提供了一种负载锁定室和用于传送大面积基板的方法。在一个实施例中，适于传送大面积衬底的负载锁定室包括多个垂直堆叠的单个衬底传送室。垂直堆叠的单个基板传送室的配置与现有技术的双槽双面基板设计相比，有助于减小尺寸和更大的通量。此外，在减少的泵送和排气速率下已经实现了增加的产量，这对应于由于颗粒和冷凝引起的底物污染的可能性降低。

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