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2. 发明授权

US06458713B1 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06458713B1
公开(公告)日：2002-10-01
申请号：US09604726
申请日：2000-06-28
申请人： Nobuhide Yamada , Rempei Nakata , Hideshi Miyajima , Motonobu Kawai
发明人： Nobuhide Yamada , Rempei Nakata , Hideshi Miyajima , Motonobu Kawai
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/3122 , H01L21/316
摘要： A method of forming a film, which comprises the steps of coating a liquid raw material comprising a precursor of film-forming material dissolved in a solvent, on a surface of substrate, and forming a solid film on the surface of substrate by subjecting the substrate to a plurality of heat treatments differing in heating temperature from each other. The heat treatments differing heating temperatures from each other are performed over the same single hot plate. The film to be formed may be an organic SOG film. There is also disclosed a method of manufacturing a semiconductor device, which comprises the steps of coating a liquid raw material for forming an organosilicon oxide film on a surface of semiconductor substrate, and subjecting the semiconductor substrate to a first heat treatment where the semiconductor substrate is heated in an oxidizing atmosphere and at a temperature of 200° C. or more.
摘要翻译：一种形成膜的方法，其包括以下步骤：将包含溶解在溶剂中的成膜材料的前体的液体原料涂布在基材的表面上，并通过对基材进行处理而在基材表面上形成固体膜涉及加热温度彼此不同的多个热处理。在相同的单个热板上进行彼此不同的加热温度的热处理。待形成的膜可以是有机SOG膜。还公开了一种制造半导体器件的方法，其包括以下步骤：在半导体衬底的表面上涂覆用于形成有机氧化硅膜的液体原料，并对半导体衬底进行第一热处理，其中半导体衬底是在氧化气氛中并在200℃以上的温度下加热。

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