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    • 1. 发明授权
    • Controlling gas in a multichamber processing system
    • 在多室处理系统中控制气体
    • US06224679B1
    • 2001-05-01
    • US09131280
    • 1998-08-10
    • Yoshiaki SasakiTeruo Asakawa
    • Yoshiaki SasakiTeruo Asakawa
    • C23C1600
    • H01L21/67017B08B5/00H01L21/67772Y10S414/135
    • A wafer processing system comprises a container-housing chamber for housing the conveying container conveyed from the common area, a cleaning chamber disposed adjacent to the container-housing chamber, and a load-lock chamber disposed adjacent to the cleaning chamber. The cleaning chamber has an inlet line for introducing a clean gas into the cleaning chamber and a pressure control means for controlling the pressure in the cleaning chamber. The load-lock chamber has a conveying unit capable of extending to the container-housing chamber through the cleaning chamber, in order to take out the object from the conveying container housed in the container-housing chamber to the load-lock chamber through the cleaning chamber.
    • 晶片处理系统包括用于容纳从公共区域输送的输送容器的容器容纳室,邻近容器容纳室设置的清洁室和邻近清洁室设置的装载锁定室。 清洁室具有用于将清洁气体引入清洁室的入口管线和用于控制清洁室中的压力的​​压力控制装置。 负载锁定室具有能够通过清洁室延伸到容器容纳室的输送单元,以便通过清洁将物体从容纳在容器容纳室中的输送容器取出到装载锁定室 房间。
    • 3. 发明授权
    • Relay apparatus for relaying object to be treated
    • 用于中继待处理物体的继电器
    • US6013112A
    • 2000-01-11
    • US927563
    • 1997-09-09
    • Yoji IizukaTeruo Asakawa
    • Yoji IizukaTeruo Asakawa
    • B65G49/07H01L21/673H01L21/677H01L21/68
    • H01L21/67303H01L21/67781Y10T29/41
    • A relay apparatus according to the invention is provided for transferring to-be-treated objects between a transfer mechanism for carrying the objects into and out of a treatment chamber, and a cassette containing the objects. The relay apparatus comprises a transfer unit including holding portions for each holding a corresponding one of the objects from below, the transfer unit transferring the objects between the cassette and a transfer position at which the objects are transferred to the transfer mechanism, while holding the object with the holding portions, and a stopper located in the transfer position for adjusting positions of edge portions of all the objects held by the holding portions of the transfer means, thereby preventing the objects from moving horizontally relative to the holding portions.
    • 根据本发明的中继设备被提供用于在用于将物体搬入和移出处理室的传送机构和包含物体的盒子之间传送待处理物体。 中继装置包括一个传送单元,它包括保持部分,每个保持部分从下方保持对应的一个物体,传送单元将物体在盒子之间传送到传送位置,在该传送位置将物体传送到传送机构,同时保持物体 保持部分和位于转移位置的止动件,用于调节由转印装置的保持部分保持的所有物体的边缘部分的位置,从而防止物体相对于保持部分水平移动。
    • 4. 发明授权
    • Stage having electrostatic chuck and plasma processing apparatus using
same
    • 具有静电卡盘和使用其的等离子体处理装置的阶段
    • US5460684A
    • 1995-10-24
    • US160842
    • 1993-12-03
    • Hiroaki SaekiTeruo AsakawaNoboru MasuokaMasaki Kondo
    • Hiroaki SaekiTeruo AsakawaNoboru MasuokaMasaki Kondo
    • C23C16/458H01L21/683C23F1/02C23C14/50C23C16/52
    • H01L21/6831C23C16/4586H01L21/6833
    • The plasma etching apparatus for a semiconductor wafer includes a susceptor provided in the vacuum process chamber. An electrostatic chuck for attracting and holding the wafer is provided on the susceptor. The electrostatic chuck comprises a chuck electrode provided on the susceptor via an insulative layer. The chuck electrode is connected to the positive terminal of the DC power supply via a switch. The chuck electrode is coated with a resistive layer, and the wafer is placed directly on the resistive layer. The resistive layer exhibits an electric resistivity of 1.times.10.sup.10 .OMEGA..multidot.cm to 1.times.10.sup.12 .OMEGA..multidot.cm in a temperature range for etching. The resistive layer is formed to have such a surface roughness that a center line average hight falls within a range of 0.1 to 1.5 .mu.m. When the potential of the positive terminal of the DC power supply is applied to the chuck electrode, and the wafer is grounded via plasma, a contact potential difference is created between the surface of the resistive layer and the rear surface of the wafer, generating an electrostatic attractive force, so that the wafer is attracted and held by the resistive layer.
    • 用于半导体晶片的等离子体蚀刻装置包括设置在真空处理室中的基座。 用于吸引和保持晶片的静电卡盘设置在基座上。 静电卡盘包括通过绝缘层设置在基座上的卡盘电极。 卡盘电极通过开关连接到直流电源的正极端子。 卡盘电极涂覆有电阻层,晶片直接放置在电阻层上。 在蚀刻的温度范围内,电阻层的电阻率为1×10 10欧米伽xcm至1×10 12欧米伽×厘米。 电阻层形成为具有中心线平均高度在0.1〜1.5μm的范围内的表面粗糙度。 当直流电源的正端子的电位施加到卡盘电极并且晶片通过等离子体接地时,在电阻层的表面和晶片的后表面之间产生接触电位差,从而产生 静电吸引力,使得晶片被电阻层吸引并保持。
    • 6. 发明授权
    • Processing method for wafers
    • 晶圆加工方法
    • US5357115A
    • 1994-10-18
    • US109733
    • 1993-08-20
    • Teruo AsakawaTetsu OsawaNoboru Hosaka
    • Teruo AsakawaTetsu OsawaNoboru Hosaka
    • B65G49/00C23C14/56C30B35/00H01J37/317H01L21/00H01L21/265H01L21/677H01J37/20
    • H01L21/67069C30B35/005H01L21/67201H01L21/67213H01L21/67259H01L21/67745
    • Load lock chambers having a function of detecting positional deviation of wafers are provided in a process chamber of an ion injection apparatus, two on a carrying-in side, and two on a carrying-out side. One load lock chamber on the carrying-in side and one on the carrying-out side are used as a standby. Carrying-in and carrying-out members are outside of the process chamber. Two transfer members are in the process chamber. A dummy wafer stage is formed at a position which can be accessed by the transfer members. Wafers are transferred from load stages by the carrying-in member via the load lock chambers to the process chamber through a double operation line. Loading a wafer on the turn table and unloading a wafer therefrom can be performed simultaneously by operations of the transfer members and. The wafers are similarly carried out of the apparatus in a double operation line. At this time, dummy wafers in the process chamber can be used, if necessary.
    • 具有检测晶片位置偏差功能的加载锁定室设置在离子注入装置的处理室中,两个位于输入侧,两个位于输出侧。 使用侧的一个装载锁定室和一个在进出侧的装载锁定室用作备用。 携带和携带成员在处理室之外。 两个转移构件位于处理室中。 虚设晶片台形成在能够被转印部件访问的位置。 晶片从负载阶段通过承载构件经由负载锁定室通过双重操作线路传送到处理室。 将转盘上的晶片装载并卸载晶片可以通过转印部件的操作同时进行。 晶圆类似地在双重操作线中由设备执行。 此时,如果需要,可以使用处理室中的虚设晶片。
    • 7. 发明授权
    • Positioning stage having a vibration suppressor
    • 具有振动抑制器的定位台
    • US4525659A
    • 1985-06-25
    • US429278
    • 1982-09-30
    • Issei ImahashiTeruo Asakawa
    • Issei ImahashiTeruo Asakawa
    • G05D3/00F16F15/03B64C17/06
    • F16F15/03
    • A first stage adapted to be moved in predetermined directions by a first driving device is provided in a machine base supported from a foundation by an intermediary of resilient means. This first stage is provided a second stage adapted to be moved in the directions at right angles to the directions of movement of the first stage by a second driving device. Upon movement of these respective stages, vibration of the machine base is excited by reaction forces exerted upon the machine base as a result of acceleration and deceleration. These reaction forces are offset by resistive forces generated by first and second force generators respectively. The first and second force generators establish an electromagnetic coupling between the foundation and the machine base. The first force generator is made to act against the first driving device, and the second force generator is made to act against the second driving device, in such manner that the first and second force generators generate forces directed in the opposite directions to and having substantially the same magnitudes as the reaction forces exerted upon the machine base by the first and second driving devices, respectively. This occurs simultaneously with energization of the corresponding driving devices and effectively suppresses vibration of the machine base.
    • 通过第一驱动装置适于在预定方向上移动的第一阶段设置在通过弹性装置的中间从基座支撑的机器基座中。 该第一阶段设置有第二阶段,其适于通过第二驱动装置在与第一阶段的运动方向成直角的方向上移动。 在这些各个阶段的运动中,由于加速和减速,机器基座的振动被施加在机器基座上的反作用力激发。 这些反作用力分别由第一和第二力发生器产生的阻力抵消。 第一和第二力发生器在基座和机座之间建立电磁耦合。 第一力发生器被制成用于抵靠第一驱动装置作用,并且第二力发生器被制成作用在第二驱动装置上,使得第一和第二力发生器产生相反方向的力并且基本上 与由第一和第二驱动装置分别施加在机器基座上的反作用力相同的大小。 这与相应的驱动装置的通电同时发生,并且有效地抑制了机器基座的振动。