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1. 发明授权

US07511991B2 Spin-injection magnetic random access memory 有权
标题翻译：旋转注入磁性随机存取存储器
公开(公告)号：US07511991B2
公开(公告)日：2009-03-31
申请号：US11750856
申请日：2007-05-18
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/08
摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.
摘要翻译：根据本发明实施例的自旋注入磁随机存取存储器包括具有磁化方向固定的磁固定层的磁阻元件，其磁化方向可以通过注入自旋极化电子而改变的磁记录层，以及隧道设置在磁性固定层和磁记录层之间的阻挡层，使自旋注入电流通过磁阻元件的位线，用于产生自旋极化电子的自旋注入电流，写入字线，辅助电流通过，辅助电流用于在磁阻元件的易磁化易磁化方向上产生辅助磁场，以及确定自旋注入电流的方向和驱动器/ 协助电流

2. 发明申请

US20070223269A1 SPIN-INJECTION MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：旋转注射磁性随机存取存储器
公开(公告)号：US20070223269A1
公开(公告)日：2007-09-27
申请号：US11750856
申请日：2007-05-18
申请人： Yoshiaki SAITO , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
发明人： Yoshiaki SAITO , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
IPC分类号： G11C11/02
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/08
摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.
摘要翻译：根据本发明实施例的自旋注入磁随机存取存储器包括具有磁化方向固定的磁固定层的磁阻元件，其磁化方向可以通过注入自旋极化电子而改变的磁记录层，以及隧道设置在磁性固定层和磁记录层之间的阻挡层，使自旋注入电流通过磁阻元件的位线，用于产生自旋极化电子的自旋注入电流，写入字线，辅助电流通过，辅助电流用于在磁阻元件的易磁化易磁化方向上产生辅助磁场，以及确定自旋注入电流的方向和驱动器/ 协助电流

3. 发明申请

US20060171198A1 Spin-injection magnetic random access memory 有权
公开(公告)号：US20060171198A1
公开(公告)日：2006-08-03
申请号：US11242906
申请日：2005-10-05
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/08
摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.

4. 发明授权

US07239541B2 Spin-injection magnetic random access memory 有权
标题翻译：旋转注入磁性随机存取存储器
公开(公告)号：US07239541B2
公开(公告)日：2007-07-03
申请号：US11242906
申请日：2005-10-05
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/08
摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.
摘要翻译：根据本发明实施例的自旋注入磁随机存取存储器包括具有磁化方向固定的磁固定层的磁阻元件，其磁化方向可以通过注入自旋极化电子而改变的磁记录层，以及隧道设置在磁性固定层和磁记录层之间的阻挡层，使自旋注入电流通过磁阻元件的位线，用于产生自旋极化电子的自旋注入电流，写入字线，辅助电流通过，辅助电流用于在磁阻元件的易磁化易磁化方向上产生辅助磁场，以及确定自旋注入电流的方向和驱动器/ 协助电流

5. 发明授权

US06934184B2 Magnetic memory 失效
标题翻译：磁记忆
公开(公告)号：US06934184B2
公开(公告)日：2005-08-23
申请号：US10893915
申请日：2004-07-20
申请人： Minoru Amano , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito , Shigeki Takahashi , Tomomasa Ueda , Katsuya Nishiyama , Yoshiaki Asao , Yoshihisa Iwata
发明人： Minoru Amano , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito , Shigeki Takahashi , Tomomasa Ueda , Katsuya Nishiyama , Yoshiaki Asao , Yoshihisa Iwata
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08
CPC分类号： G11C11/15
摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.
摘要翻译：在用于存储单元的磁阻效应元件的存储层中，高度可靠的磁存储器在高存储密度下表现出增强的数据保持稳定性。磁存储器包括具有第一布线的存储单元阵列，与第一布线相交的第二布线和各自设置在相应的第一布线和第二布线的交叉区域的存储单元。当选择对应的第一和第二布线时，选择每个存储单元。每个存储单元包括磁阻效应元件，其具有存储层，其中当电流流过所选择的第一和第二布线时，通过产生的磁场来存储数据;第一磁性构件，具有设置为部分地包围每个第一布线的两端，端部位于容易的磁化轴的方向上，以形成具有存储层的闭环磁路，以及具有两端的第二磁性构件，其设置为部分地包围每个第二布线，并且两端位于磁化强度轴的方向，放大沿着硬磁化轴的方向施加到存储层的磁场。第一磁性构件的每个端部被定位成比第二磁性构件的每个端部更靠近存储层。

6. 发明授权

US06717845B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US06717845B2
公开(公告)日：2004-04-06
申请号：US10345253
申请日：2003-01-16
申请人： Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi , Minoru Amano , Tomomasa Ueda , Hiroaki Yoda , Yoshiaki Asao , Yoshihisa Iwata , Tatsuya Kishi
发明人： Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi , Minoru Amano , Tomomasa Ueda , Hiroaki Yoda , Yoshiaki Asao , Yoshihisa Iwata , Tatsuya Kishi
IPC分类号： G11C1115
CPC分类号： G11C11/16
摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first wiring extending in a first direction on or below the magnetoresistance effect element; a covering layer provided at least both sides of the first wiring, the covering layer being made of magnetic material, and the covering layer having a uniaxial anisotropy in the first direction along which a magnetization of the covering layer occurs easily; and a writing circuit configured to pass a current through the first wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.
摘要翻译：磁存储器包括：具有磁记录层的磁阻效应元件; 在所述磁阻效应元件上或第二方向上延伸的第一布线; 所述覆盖层至少设置在所述第一布线的两侧，所述覆盖层由磁性材料制成，所述覆盖层在容易发生所述覆盖层的磁化的第一方向上具有单轴各向异性; 以及写入电路，被配置为使电流通过第一布线，以便通过由电流产生的磁场将信息记录在磁记录层中。

7. 发明授权

US06873023B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US06873023B2
公开(公告)日：2005-03-29
申请号：US10418047
申请日：2003-04-18
申请人： Yoshiaki Asao , Yoshihisa Iwata , Yoshiaki Saito , Hiroaki Yoda , Tomomasa Ueda , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
发明人： Yoshiaki Asao , Yoshihisa Iwata , Yoshiaki Saito , Hiroaki Yoda , Tomomasa Ueda , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
IPC分类号： G11C11/16 , H01L43/00
CPC分类号： G11C11/16
摘要： A write word line is disposed right under an MTJ element. The write word line extends in an X direction, and a lower surface of the line is coated with a yoke material which has a high permeability. A data selection line (read/write bit line) is disposed right on the MTJ element. A data selection line extends in a Y direction intersecting with the X direction, and an upper surface of the line is coated with the yoke material which has the high permeability. At a write operation time, a magnetic field generated by a write current flowing through a write word line B and data selection line functions on the MTJ element by the yoke material with good efficiency.
摘要翻译：写字线被放置在MTJ元素的正下方。写字线在X方向上延伸，并且线的下表面涂覆有具有高磁导率的磁轭材料。数据选择线（读/写位线）设置在MTJ元件上。数据选择线在与X方向交叉的Y方向上延伸，并且线的上表面涂覆有具有高磁导率的磁轭材料。在写操作时刻，通过写入字线B和数据选择线产生的写入电流产生的磁场通过磁轭材料以良好的效率在MTJ元件上起作用。

8. 发明授权

US06831857B2 Magnetic memory 失效
公开(公告)号：US06831857B2
公开(公告)日：2004-12-14
申请号：US10329417
申请日：2002-12-27
申请人： Minoru Amano , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito , Shigeki Takahashi , Tomomasa Ueda , Katsuya Nishiyama , Yoshiaki Asao , Yoshihisa Iwata
发明人： Minoru Amano , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito , Shigeki Takahashi , Tomomasa Ueda , Katsuya Nishiyama , Yoshiaki Asao , Yoshihisa Iwata
IPC分类号： G11C1115
CPC分类号： G11C11/15
摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.

9. 发明授权

US07333359B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US07333359B2
公开(公告)日：2008-02-19
申请号：US10419873
申请日：2003-04-22
申请人： Yoshiaki Asao , Yoshihisa Iwata , Yoshiaki Saito , Hiroaki Yoda , Tomomasa Ueda , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
发明人： Yoshiaki Asao , Yoshihisa Iwata , Yoshiaki Saito , Hiroaki Yoda , Tomomasa Ueda , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi
IPC分类号： G11C11/00
CPC分类号： B82Y25/00 , G11C11/16 , H01F10/06 , H01F10/3254
摘要： A write word line is disposed right under a MTJ element. The write word line extends in an X direction, and side and lower surfaces of the write word line are coated with a hard magnetic material and yoke material. The hard magnetic material is magnetized by a surplus current passed through the write word line, and a characteristic of the MTJ element is corrected by residual magnetization. A data selection line (read/write bit line) is disposed right on the MTJ element. The data selection line extends in a Y direction intersecting with the X direction, and a part of the surface of the data selection line is coated with the yoke material.
摘要翻译：写字线被放置在MTJ元素的正下方。写字线在X方向上延伸，并且写字线的侧表面和下表面涂覆有硬磁材料和轭材料。硬磁材料被通过写入字线的剩余电流磁化，并且通过剩余磁化来校正MTJ元件的特性。数据选择线（读/写位线）设置在MTJ元件上。数据选择线在与X方向相交的Y方向上延伸，并且数据选择线的表面的一部分涂覆有轭材料。

10. 发明申请

US20050274984A1 Semiconductor integrated circuit device and method of manufacturing the same 审中-公开
公开(公告)号：US20050274984A1
公开(公告)日：2005-12-15
申请号：US11152411
申请日：2005-06-15
申请人： Keiji Hosotani , Yoshiaki Asao , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi , Yoshihisa Iwata
发明人： Keiji Hosotani , Yoshiaki Asao , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi , Yoshihisa Iwata
IPC分类号： H01L27/105 , H01L21/768 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L27/10
CPC分类号： H01L27/228 , B82Y10/00 , H01L21/76895 , H01L43/08
摘要： A semiconductor integrated circuit device includes a cell transistor; a bit line provided above the cell transistor; a magnetoresistive element provided above the bit line, a first end portion of the magnetoresistive element being electrically connected to the bit line; an intracell local interconnection provided above the magnetoresistive element, the intracell local interconnection coupling one of source and drain regions of the cell transistor to a second end portion of the magnetoresistive element; and a write word line provided above the intracell local interconnection, a portion between the write word line and the intracell local interconnection being filled with an insulator alone.

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