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    • 1. 发明授权
    • Pattern forming method
    • 图案形成方法
    • US06527966B1
    • 2003-03-04
    • US09445346
    • 2000-05-01
    • Koji ShimomuraYoshiaki KinoshitaSatoru FunatoYuko Yamaguchi
    • Koji ShimomuraYoshiaki KinoshitaSatoru FunatoYuko Yamaguchi
    • B44C122
    • G03F7/0045G03F7/091H01L21/0276H01L21/31138H01L21/32137H01L21/32139
    • A method of forming a pattern in which production of reaction products in the interface between an organic anti-reflective coating and a radiation sensitive material coating is suppressed, the number of residues of an etchable layer formed after etching is decreased, and which provides a etched pattern having high resolution and good dimensional accuracy. According to the method, an etchable layer (11) composed of polysilicon coating an organic anti-reflective coating (12), and a radiation sensitive material coating (13) composed of a chemically amplified resist material containing as acid generators both (a) onium salt compound and (b) at least one of a sulfone compound and a sulfonate compound are formed on a semiconductor substrate (10), the radiation sensitive material coating (13) is imagewise exposed through the mask (14) and developed to form a patterned radiation sensitive material coating (13b). Thereafter, preferably the anti-reflective coating is etched using a mixture gas of SO2 and O2, further the etchable layer is dry-etched to form a pattern of the etchable layer.
    • 形成在有机抗反射涂层和辐射敏感材料涂层之间的界面中反应产物的产生被抑制的图案的方法,蚀刻后形成的可蚀刻层的残留数量减少,并且提供蚀刻 图案具有高分辨率和良好的尺寸精度。 根据该方法,由多晶硅涂覆有机抗反射涂层(12)组成的可蚀刻层(11)和由化学放大抗蚀剂材料组成的辐射敏感材料涂层(13),所述抗蚀剂材料包含(a) 盐化合物和(b)在半导体衬底(10)上形成砜化合物和磺酸盐化合物中的至少一种,将辐射敏感材料涂层(13)通过掩模(14)成像曝光并显影以形成图案化 辐射敏感材料涂层(13b)。 此后,优选地使用SO 2和O 2的混合气体来蚀刻抗反射涂层,此外,可蚀刻的层被干蚀刻以形成可蚀刻层的图案。
    • 4. 发明授权
    • Chemically amplified resist composition
    • 化学放大抗蚀剂组合物
    • US06479210B2
    • 2002-11-12
    • US09445345
    • 2000-04-03
    • Yoshiaki KinoshitaSatoru FunatoYuko Yamaguchi
    • Yoshiaki KinoshitaSatoru FunatoYuko Yamaguchi
    • G03F7004
    • G03F7/0045G03F7/039Y10S430/115Y10S430/12Y10S430/122
    • A chemically amplified resist composition is disclosed which shows a high sensitivity, high resolution, excellent processing adaptability and excellent processing stability, which can form good pattern profile and which is suited as a finely processable material for use in manufacturing integrated circuit elements or the like. The chemically amplified resist composition comprises at least (a) an organic material containing a substituent or substituents capable of being released in the presence of an acid and (b) compounds capable of generating an acid upon exposure to radiation (acid-generators), composed of at least one onium salt and at least one of sulfone compounds and sulfonate compounds. This chemically amplified resist composition preferably further contains a basic compound.
    • 公开了一种化学放大抗蚀剂组合物,其显示出高灵敏度,高分辨率,优异的加工适应性和优异的加工稳定性,其可以形成良好的图案轮廓,并且适合作为用于制造集成电路元件等的精细加工材料。 化学放大抗蚀剂组合物至少包含(a)含有取代基的有机材料或能够在酸存在下释放的取代基和(b)在暴露于辐射(酸 - 发生剂)时能够产生酸的化合物, 的至少一种鎓盐和至少一种砜化合物和磺酸盐化合物。 该化学放大抗蚀剂组合物优选还含有碱性化合物。
    • 8. 发明授权
    • Radiation sensitive composition
    • 辐射敏感组合物
    • US5738972A
    • 1998-04-14
    • US864375
    • 1997-05-28
    • Munirathna PadmanabanNatsumi SuehiroYoshiaki KinoshitaSatoru FunatoSeiya MasudaHiroshi OkazakiGeorg Pawlowski
    • Munirathna PadmanabanNatsumi SuehiroYoshiaki KinoshitaSatoru FunatoSeiya MasudaHiroshi OkazakiGeorg Pawlowski
    • G03F7/00G03F7/004G03F7/033G03F7/039G03F7/085H01L21/027G03F7/38
    • G03F7/0045Y10S430/106
    • A chemically amplified resist material comprising: a) a homopolymer or a copolymer of hydroxystyrene or hydroxystyrene partly protected by a group sensitive to an acid such as a tetrahydropyranyl or t-butoxycarbonyl group, b) a dissolution inhibitor such as poly(N,O-acetal) or phenol or bisphenol protected by a group cleavable with an acid, c) a photosensitive compound capable of generating an acid upon exposure, d) a base capable of degrading upon radiation to regulate the line width in a period between the exposure step and the processing steps after exposure, e) a low-molecular weight phenolic or polyphenolic compound having a structure represented by the following general formula or a mixture of the phenolic or polyphenolic compounds: ##STR1## where n is an integer of 1 to 5, m is an integer of 0 to 4, n+m.ltoreq.5, and p is an integer of 1 to 10, each R is a C.sub.1 -C.sub.12 alkyl group or an unsubstituted or substituted cycloalkyl group or a C.sub.1 -C.sub.5 hydroxyalkyl group, provided that hydrogen atoms may be substituted with a halogen atom and, when m is not less than 2, each R may be the same or different; A represents a hydrocarbon atomic grouping, having a valence of p, including an unsubstituted or substituted C.sub.1 -C.sub.100 alicyclic, chain aliphatic, or aromatic hydrocarbon or a combination thereof with the carbon atoms being optionally substituted with an oxygen atom, provided that when p is 1, A may represent a hydrogen atom and, when p is 2, A may represent --S--, --SO--, --SO.sub.2 --, --O--, --CO--, or a direct bond, and f) a solvent for dissolving the components a) to e).
    • 一种化学放大抗蚀剂材料,包括:a)部分由对酸如四氢吡喃基或叔丁氧基羰基敏感的基团部分保护的羟基苯乙烯或羟基苯乙烯的均聚物或共聚物,b)溶解抑制剂如聚(N, 乙缩醛)或苯酚或双酚被被一个酸可裂解的基团保护,c)一种能够在暴露时产生酸的感光性化合物,d)能够在辐射下降解以在曝光步骤和 曝光后的处理步骤,e)具有由以下通式表示的结构的低分子量酚或多酚化合物或酚类或多酚化合物的混合物:n为0〜4的整数,n + m = 5 ,p为1〜10的整数,R为C1-C12烷基或未取代或取代的环烷基或C1-C5羟烷基,条件是氢原子可被卤素原子取代, en不小于2,每个R可以相同或不同; A表示具有p价的烃原子团,包括未取代或取代的C1-C100脂环族,链脂族或芳族烃或其任选被氧原子取代的碳原子的组合,条件是当p为 1中,A可以表示氢原子,当p为2时,A可以表示-S-,-SO-,-SO2-,-O-,-CO-或直接键,f)溶解溶剂 组件a)至e)。
    • 9. 发明授权
    • Radiation-sensitive composition and recording medium using the same
    • 辐射敏感组合物和使用其的记录介质
    • US6110639A
    • 2000-08-29
    • US860451
    • 1997-06-26
    • Seiya MasudaSatoru FunatoNatsumi Kawasaki
    • Seiya MasudaSatoru FunatoNatsumi Kawasaki
    • G03F7/004G03F7/038
    • G03F7/038G03F7/0045Y10S430/121
    • A radiation-sensitive composition comprising:an acid-generating compound capable of generating an acid upon exposure to radiation and represented by the formula (I): ##STR1## wherein X, Y and R.sup.1 to R.sup.5 have the following meanings: X and Y: independently a direct bond, C.sub.1 -C.sub.8 alkylene, C.sub.1 -C.sub.4 alkene, --O--R.sup.11 --O-- (wherein R.sup.11 is an alkylene group having 1 to 4 carbon atoms), --NH--, --O--, --S--, --SO.sub.2 --, --CO--, --COO-- or --CONR.sup.12 -- (wherein R.sup.12 is a hydrogen atom, C.sub.1 -C.sub.8 alkyl, alkylaryl, halogenated alkyl, halogenated aryl, a halogen atom, alkoxy, phenoxy, alkylsulfonyl-oxy, halogenated alkylsulfonyl-oxy, or substituted or unsubstituted arylsulfonyl-oxy);R.sup.1 to R.sup.4 : a hydrogen atom, C.sub.1 -C.sub.18 alkyl, aryl, hetero-aryl, a halogen atom, alkyl-substituted or aryl-substituted amino, alkyl-substituted or aryl-substituted amido, nitro, cyano, aldehyde, acetal, alkoxy, phenoxy, alkylsulfonyl-oxy, or substituted or unsubstituted arylsulfonyl-oxy;R.sup.5 : a hydrogen atom, alkyl, aryl, halogenated alkyl, halogenated aryl, halogenated hetero-aryl, alkylsulfonyl-oxy, halogenated alkylsulfonyl-oxy, or substituted or unsubstituted arylsulfonyl-oxy;a water-insoluble but aqueous alkaline solution-soluble binder; anda cross-linking compound capable of reacting with said binder in the presence of said acid to cause the binder to be cross-linked. Further, a radiation-sensitive recording medium can be obtained by forming a layer made of the radiation-sensitive composition on a substrate.
    • PCT No.PCT / JP95 / 02764 Sec。 371日期:1997年6月26日 102(e)日期1997年6月26日PCT 1995年12月28日PCT PCT。 出版物WO96 / 20432 日期:1996年7月4日一种辐射敏感性组合物,其包含:在暴露于辐射后能够产生酸并由式(I)表示的产酸化合物:其中X,Y和R 1至R 5具有以下含义:X和 Y:独立地是直接键合,C1-C8亚烷基,C1-C4链烯基,-O-R11-O-(其中R11是具有1-4个碳原子的亚烷基),-NH-,-O - , - S-, -SO 2 - , - CO - , - COO-或-CONR 12 - (其中R 12是氢原子,C 1 -C 8烷基,烷基芳基,卤代烷基,卤代芳基,卤素原子,烷氧基,苯氧基,烷基磺酰基 - 氧基,卤代烷基磺酰基 - 氧基或取代或未取代的芳基磺酰基 - 氧基); R1至R4:氢原子,C1-C18烷基,芳基,杂芳基,卤素原子,烷基取代或芳基取代的氨基,烷基取代或芳基取代的酰氨基,硝基,氰基,醛,缩醛,烷氧基 ,苯氧基,烷基磺酰基氧基或取代或未取代的芳基磺酰基 - 氧基; R5:氢原子,烷基,芳基,卤代烷基,卤代芳基,卤代杂芳基,烷基磺酰基氧基,卤代烷基磺酰基氧基或取代或未取代的芳基磺酰基氧基; 水不溶性但碱性溶液水溶性粘合剂; 和能够在所述酸存在下与所述粘合剂反应以使粘合剂交联的交联化合物。 此外,通过在基板上形成由辐射敏感性组合物制成的层,可以获得辐射敏感记录介质。