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1. 发明授权

US5845526A Method for producing pipe having polygon-shaped closed cross-section and device therefor 失效
标题翻译：用于制造具有多边形封闭截面的管的方法及其装置
公开(公告)号：US5845526A
公开(公告)日：1998-12-08
申请号：US831477
申请日：1997-03-31
申请人： Yoshiaki Kadoma , Iwao Nihashi , Hideo Ogawa , Hiroyuki Amino , Youji Suzuki
发明人： Yoshiaki Kadoma , Iwao Nihashi , Hideo Ogawa , Hiroyuki Amino , Youji Suzuki
IPC分类号： B21C37/10 , B21C37/15 , B21D3/10 , B21D5/01 , B21D39/02 , B21D51/28
CPC分类号： B21C37/104 , B21C37/155
摘要： A method for continuously producing pipes, each having a polygon-shaped closed cross-section taken perpendicularly to the feeding direction of a strip of metal, which are free from brittleness caused by metal fatigue, and have good precision. A feed-bending method of successively feeding a strip of metal (work) W between a main die body, mandrel, punch and correction punches by predetermined feed lengths, and pressing the work W with these members synchroously with feeding is performed. The work W is gradually bent along designed ridgelines L1 through L2 extending in the feeding direction and defining ridgelines L5 through L8 of a product pipe W1, from the ridgelines L1 and L2 close to widthwise ends e1 and e2 to the ridgelines L3 and L4 in the widthwise center thereof in the course between the vicinity of an inlet and the vicinity of a middle of a device, and then, a resulting rough pipe W0 is corrected from the inside and outside thereof in the vicinity of an outlet of the device.
摘要翻译：一种用于连续生产管道的方法，其具有垂直于金属条的进给方向垂直截取的多边形封闭横截面，其不受金属疲劳引起的脆性，并且具有良好的精度。执行以预定的进给长度在主模具主体，心轴，冲头和校正冲头之间连续供给金属（工件）W条的进给弯曲方法，并且与进给同步地用这些构件按压工件W. 工件W沿着沿着进给方向延伸的设计的脊线L1至L2逐渐弯曲，并且从靠近横向端e1和e2的棱线L1和L2定位到产品管W1的脊线L5至L8到脊线L3和L4 在入口附近和设备中部附近的过程中的宽度方向中心，然后从设备的出口附近的内部和外部校正所得到的粗管W0。

2. 发明授权

US06343221B1 Digital portable telephone device 失效
标题翻译：数字便携式电话设备
公开(公告)号：US06343221B1
公开(公告)日：2002-01-29
申请号：US08987955
申请日：1997-12-10
申请人： Yoshifumi Toda , Youji Suzuki
发明人： Yoshifumi Toda , Youji Suzuki
IPC分类号： H04B138
CPC分类号： H04B1/406
摘要： A digital portable telephone device includes a receiver section which receives a signal within one of an analog receiving frequency band and a digital receiving frequency band. A received signal is converted into one of a digital-band first intermediate-frequency signal and an analog-band first intermediate-frequency signal by using a first local signal. A transmitter section transmits a signal within one of an analog transmitting frequency band and a digital transmitting frequency band, wherein a modulation signal is generated by using the first local signal. A radio-frequency local signal generating section generates the first local signal within one of a digital local signal frequency band and an analog local signal frequency band, and supplies the first local signal to one of the receiver section and the transmitter section.
摘要翻译：数字便携式电话装置包括接收模拟接收频带和数字接收频带之一内的信号的接收机部分。接收到的信号通过使用第一本地信号被转换成数字频带第一中频信号和模拟频带第一中频信号之一。发射机部分发射模拟发射频带和数字发射频带之一内的信号，其中通过使用第一局部信号产生调制信号。射频本地信号发生部分在数字本地信号频带和模拟本地信号频带之一内产生第一本地信号，并将第一本地信号提供给接收机部分和发射机部分之一。

3. 发明授权

US08214681B2 Power control system, power monitoring device, record medium having power monitoring program recorded therein, and power monitoring method 有权
标题翻译：功率控制系统，电力监控装置，其中记录有电力监视程序的记录介质和电力监控方法
公开(公告)号：US08214681B2
公开(公告)日：2012-07-03
申请号：US12475726
申请日：2009-06-01
申请人： Youji Suzuki
发明人： Youji Suzuki
IPC分类号： G06F1/00 , G06F11/30
CPC分类号： H04L12/10 , G06F1/3209
摘要： The present invention has an object of realizing a power source redundancy of each of devices constructing a network while suppressing a processing load of each device with a simplified configuration. A power monitoring device includes a power configuration generator for preparing power control information based upon device information including necessary power information, being information indicative of a power necessary for operating each monitored device itself, and power status information indicative of a received power in each monitored device, causing a power configuration information storage to store the prepared power control information, and further transmitting the prepared power control information to each monitored device. Further, the monitored device includes a power controller for controlling the power of its own device based upon the transmitted power control information.
摘要翻译：本发明的目的是在以简化的结构抑制每个设备的处理负荷的同时，实现构成网络的每个设备的电源冗余。功率监测装置包括：功率配置发生器，用于基于包括必要功率信息的设备信息来准备功率控制信息，所述功率信息是指示操作每个被监控设备本身所需的功率的信息，以及指示每个被监控设备中的接收功率的功率状态信息使得功率配置信息存储器存储所准备的功率控制信息，并且进一步将准备的功率控制信息发送到每个被监视的设备。此外，所监视的设备包括功率控制器，用于基于发送的功率控制信息来控制其自己的设备的功率。

4. 发明授权

US09216948B2 Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer 有权
标题翻译：制造含有金属杂质量减少的半导体光刻用共聚物的方法以及用于制备共聚物的聚合引发剂的纯化方法
公开(公告)号：US09216948B2
公开(公告)日：2015-12-22
申请号：US13451793
申请日：2012-04-20
申请人： Youji Suzuki
发明人： Youji Suzuki
IPC分类号： C08F220/20 , C07C245/04 , C08F222/20 , C08F20/12 , C08F20/02 , C08F20/64 , C08F16/26 , C07C245/00 , C08F20/06 , C08F16/10 , C07B63/00 , C08F20/26 , C08F16/04
CPC分类号： C07C245/04 , B01D69/08 , B01D2239/1216 , B01D2257/00 , C07B63/00 , C07C245/00 , C08F4/04 , C08F4/28 , C08F16/04 , C08F16/10 , C08F16/26 , C08F20/02 , C08F20/06 , C08F20/12 , C08F20/26 , C08F20/64 , C08F220/20 , C08F222/20
摘要： A method for producing a copolymer for semiconductor lithography containing less metal impurities, and a method for purifying a polymerization initiator for production of the copolymer, are provided. The method for purifying a polymerization initiator to be used for production of a polymer includes a filtering step wherein a solution of a polymerization initiator dissolved in an organic solvent is allowed to pass through a filter having a nominal pore size of not more than 1.0 μm, to reduce the sodium content of the polymerization initiator solution to not more than 300 ppb with respect to the weight of the polymerization initiator. Further, the method for producing a copolymer for semiconductor lithography includes a polymerization step wherein the polymer for semiconductor lithography is synthesized by a radical polymerization reaction in the presence of a polymerization initiator purified by the above purification method.
摘要翻译：提供一种用于制备含有较少金属杂质的半导体光刻用共聚物的方法和用于制备共聚物的聚合引发剂的纯化方法。用于制备聚合物的聚合引发剂的纯化方法包括使溶解在有机溶剂中的聚合引发剂的溶液通过标称孔径不大于1.0μm的过滤器的过滤步骤，将聚合引发剂溶液的钠含量相对于聚合引发剂的重量减少到不大于300ppb。此外，用于半导体光刻的共聚物的制造方法包括聚合步骤，其中半导体光刻用聚合物通过自由基聚合反应在通过上述纯化方法纯化的聚合引发剂的存在下合成。

5. 发明申请

US20090011216A1 FOAMED LIQUID MOLDING RESIN 审中-公开
标题翻译：泡沫液体树脂
公开(公告)号：US20090011216A1
公开(公告)日：2009-01-08
申请号：US11772506
申请日：2007-07-02
申请人： Youji Suzuki , Takeshi Kato
发明人： Youji Suzuki , Takeshi Kato
IPC分类号： B32B5/18
CPC分类号： C08J9/32 , C08J2203/22 , C08J2345/00 , Y10T428/249958
摘要： A method of making a molded resin product includes the steps of (i) providing a plurality of liquid resin components that each include a reaction monomer for a resin, wherein at least one of the liquid resin components includes a catalyst, at least one of the liquid resin components includes an activator, and at least one of the liquid resin components includes thermally expandable microspheres, (ii) mixing the liquid resin components; and (iii) injecting the mixed liquid resin components into a mold at a predetermined temperature. The predetermined temperature is at least 10° C. lower than an expansion start temperature of the thermally expandable microspheres.
摘要翻译：制备模塑树脂产品的方法包括以下步骤：（i）提供多个液体树脂组分，其各自包含用于树脂的反应单体，其中至少一种液体树脂组分包括催化剂，至少一种液体树脂组分包括活化剂，并且至少一种液体树脂组分包括热膨胀性微球体，（ii）混合液体树脂组分; 和（iii）将混合液体树脂组分注入预定温度的模具中。预定温度比热膨胀性微球的膨胀开始温度低至少10℃。

6. 发明授权

US07470326B2 Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal 有权
标题翻译：硅单晶的制造装置，单晶硅的制造方法以及硅单晶
公开(公告)号：US07470326B2
公开(公告)日：2008-12-30
申请号：US11826262
申请日：2007-07-13
申请人： Youji Suzuki , Satoshi Sato
发明人： Youji Suzuki , Satoshi Sato
IPC分类号： C30B35/00
CPC分类号： C30B15/20 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1056
摘要： The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the crucible in a vertical direction; and a control device for controlling a pulling rate for the silicon single crystal by the pulling-up device, based on the detected position of the crucible.
摘要翻译：制造硅单晶的装置包括：用于储存熔融硅的坩埚; 用于从坩埚中的熔融硅提起硅单晶的拉起装置成长; 用于检测坩埚在垂直方向上的位置的检测装置; 以及控制装置，用于根据所检测到的坩埚的位置，通过上拉装置控制硅单晶的拉拔速度。

7. 发明授权

US07368011B2 Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal 有权
公开(公告)号：US07368011B2
公开(公告)日：2008-05-06
申请号：US11192039
申请日：2005-07-29
申请人： Youji Suzuki , Satoshi Sato
发明人： Youji Suzuki , Satoshi Sato
IPC分类号： C30B15/20 , C30B35/00
CPC分类号： C30B15/20 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1056
摘要： The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the crucible in a vertical direction; and a control device for controlling a pulling rate for the silicon single crystal by the pulling-up device, based on the detected position of the crucible.

8. 发明申请

US20070261632A1 Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal 有权
标题翻译：硅单晶的制造装置，单晶硅的制造方法以及硅单晶
公开(公告)号：US20070261632A1
公开(公告)日：2007-11-15
申请号：US11826262
申请日：2007-07-13
申请人： Youji Suzuki , Satoshi Sato
发明人： Youji Suzuki , Satoshi Sato
IPC分类号： C30B15/20
CPC分类号： C30B15/20 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1056
摘要： The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the crucible in a vertical direction; and a control device for controlling a pulling rate for the silicon single crystal by the pulling-up device, based on the detected position of the crucible.
摘要翻译：制造硅单晶的装置包括：用于储存熔融硅的坩埚; 用于从坩埚中的熔融硅提起硅单晶的拉起装置成长; 用于检测坩埚在垂直方向上的位置的检测装置; 以及控制装置，用于根据所检测到的坩埚的位置，通过上拉装置控制硅单晶的拉拔速度。

9. 发明授权

US4689128A Method of separating isotopes 失效
标题翻译：分离同位素的方法
公开(公告)号：US4689128A
公开(公告)日：1987-08-25
申请号：US736975
申请日：1985-05-22
申请人： Takashi Arisawa , Youji Suzuki , Yoichiro Maruyama , Masaaki Kato , Koreyuki Shiba
发明人： Takashi Arisawa , Youji Suzuki , Yoichiro Maruyama , Masaaki Kato , Koreyuki Shiba
IPC分类号： B01D59/34
CPC分类号： B01D59/34
摘要： A method is, herein, disclosed for separating a specific isotope from a mixture of isotopes by first irradiating the isotope mixture with a highly monochromatic laser light that resonates only with the energy level of the specific isotope so as to increase its chemical activity and then bombarding said specific isotope with a molecule containing highly reactive atoms so as to form a spatially separated compound rich in the specific isotope.
摘要翻译：本文公开了一种通过首先用与单个特征同位素的能级共振的高度单色激光照射同位素混合物以从同位素混合物中分离特定同位素以增加其化学活性然后轰击的方法所述特异性同位素具有含有高反应性原子的分子，以便形成富含特定同位素的空间分离的化合物。

10. 发明申请

US20060027160A1 Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal 有权
标题翻译：硅单晶的制造装置，单晶硅的制造方法以及硅单晶
公开(公告)号：US20060027160A1
公开(公告)日：2006-02-09
申请号：US11192039
申请日：2005-07-29
申请人： Youji Suzuki , Satoshi Sato
发明人： Youji Suzuki , Satoshi Sato
IPC分类号： C30B13/00
CPC分类号： C30B15/20 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1056
摘要： The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the crucible in a vertical direction; and a control device for controlling a pulling rate for the silicon single crystal by the pulling-up device, based on the detected position of the crucible.
摘要翻译：制造硅单晶的装置包括：用于储存熔融硅的坩埚; 用于从坩埚中的熔融硅提起硅单晶的拉起装置成长; 用于检测坩埚在垂直方向上的位置的检测装置; 以及控制装置，用于根据所检测到的坩埚的位置，通过上拉装置控制硅单晶的拉拔速度。

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