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1. 发明申请

US20090205707A1 SOLAR CELL AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20090205707A1
公开(公告)日：2009-08-20
申请号：US12388145
申请日：2009-02-18
申请人： Yoshiaki IKENOUE , Naoki Fukunaga , Hironao Shinohara , Hisayuki Miki , Kenzo Hanawa , Hiroaki Kaji , Hitoshi Yokouchi , Ryoko Konta
发明人： Yoshiaki IKENOUE , Naoki Fukunaga , Hironao Shinohara , Hisayuki Miki , Kenzo Hanawa , Hiroaki Kaji , Hitoshi Yokouchi , Ryoko Konta
IPC分类号： H01L31/00 , H01L21/306
CPC分类号： H01L31/022466 , H01L31/0687 , H01L31/0693 , H01L31/1852 , H01L31/186 , H01L31/1884 , Y02E10/544 , Y02P70/521
摘要： The object of the present invention is to provide a solar cell which is industrially beneficial and has high light conversion efficiency; and a method for producing a solar cell; and the present invention provides a solar cell comprising a substrate, a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, when light travels through each member from a first surface thereof, a surface opposite to the first surface is defined as a second surface, the power generation layer is formed at a second surface side of the substrate, the translucent electrode is formed on one surface of the power generation layer, and another electrode is formed on the other surface of the power generation layer, wherein the translucent electrode comprises hexagonal In2O3 crystal.
摘要翻译：本发明的目的是提供一种在工业上有益且具有高的光转换效率的太阳能电池; 以及太阳能电池的制造方法。并且本发明提供了一种太阳能电池，其包括基板，用于将接收的光转换为电力的发电层，透光性电极和另一电极，当光从其第一表面穿过各构件时，与第一表面被定义为第二表面，发电层形成在基板的第二表面侧，透光性电极形成在发电层的一个表面上，另一个电极形成在发电的另一个表面上层，其中所述透光性电极包含六方晶In2O3晶体。

2. 发明申请

US20110018022A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110018022A1
公开(公告)日：2011-01-27
申请号：US12922422
申请日：2009-03-13
申请人： Takehiko Okabe , Daisuke Hiraiwa , Masato Nakata , Hisayuki Miki , Naoki Fukunaga , Hironao Shinohara
发明人： Takehiko Okabe , Daisuke Hiraiwa , Masato Nakata , Hisayuki Miki , Naoki Fukunaga , Hironao Shinohara
IPC分类号： H01L33/42 , H01L33/32
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light-emitting device of the present invention includes: a substrate (101); a laminate semiconductor layer (20) including a light-emitting layer (105) formed on the substrate (101); a translucent electrode (109) formed on a top surface of the laminate semiconductor layer (20); and a junction layer (110) and a bonding pad electrode (107) formed on the translucent electrode (109), wherein the bonding pad electrode (107) has a laminate structure including a metal reflective layer (107a) and a bonding layer (107c) that are sequentially laminated from the translucent electrode (109) side, and the metal reflective layer (107a) is made of at least one kind of metal selected from the group consisting of Ag, Al, Ru, Rh, Pd, Os, Ir and Pt, or an alloy containing the metal.
摘要翻译：本发明的半导体发光器件包括：衬底（101）; 包括形成在所述基板（101）上的发光层（105）的层叠半导体层（20）。形成在层叠半导体层（20）的顶面上的透光性电极（109）。以及形成在所述透光性电极（109）上的接合层（110）和接合焊盘电极（107），其中所述接合焊盘电极（107）具有包括金属反射层（107a）和接合层（107c）的层叠结构），并且金属反射层（107a）由选自Ag，Al，Ru，Rh，Pd，Os，Ir中的至少一种金属制成和Pt，或含有金属的合金。

3. 发明授权

US07759690B2 Gallium nitride-based compound semiconductor light-emitting device 有权
标题翻译：氮化镓系化合物半导体发光元件
公开(公告)号：US07759690B2
公开(公告)日：2010-07-20
申请号：US11994549
申请日：2006-06-30
申请人： Hisayuki Miki , Hironao Shinohara , Koji Kamei
发明人： Hisayuki Miki , Hironao Shinohara , Koji Kamei
IPC分类号： H01L29/225 , H01L29/22 , H01L25/16 , H01L33/00
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2933/0083
摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency.The inventive gallium nitride-based compound semiconductor light-emitting device has a gallium nitride-based compound semiconductor layer structure comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, on a substrate, wherein a positive electrode provided on the p-type semiconductor layer is a reflective positive electrode comprising a transparent material layer and a reflective metal layer formed on the transparent material layer.
摘要翻译：本发明的目的是提供一种具有反射性正极的氮化镓系化合物半导体发光元件，其具有优异的光提取效率。本发明的氮化镓系化合物半导体发光元件在基板上具有含有n型半导体层，发光层和p型半导体层的氮化镓系化合物半导体层结构，设置在p型半导体层上的电极是包括透明材料层和形成在透明材料层上的反射金属层的反射性正极。

4. 发明申请

US20110062479A1 METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP 有权
标题翻译：制备III族氮化物半导体发光器件的方法和III族氮化物半导体发光器件和灯
公开(公告)号：US20110062479A1
公开(公告)日：2011-03-17
申请号：US12992232
申请日：2009-05-12
申请人： Susumu Sugano , Hisayuki Miki , Hironao Shinohara
发明人： Susumu Sugano , Hisayuki Miki , Hironao Shinohara
IPC分类号： H01L33/58 , H01L21/30
CPC分类号： H01L33/0095 , H01L24/32 , H01L33/16 , H01L33/20 , H01L33/22 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/10155 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer (30) so as to a main surface (20) of a substrate (2), a masking step of forming a protective film on the semiconductor layer (30), a semiconductor layer removal step of removing the protective film and the semiconductor layer (30) by laser irradiation to expose the substrate (2), a grinding step of reducing the thickness of the substrate (2), a polishing step of polishing the substrate (2), a laser processing step of providing processing marks to the inside of the substrate (2), a division step of creating a plurality of light-emitting devices (1) while forming a division surface of the substrate (2) to have a rough surface.
摘要翻译：提供一种III族氮化物半导体发光器件的制造方法，其中可以获得内部量子效率和光提取效率优异的发光器件，III族氮化物半导体发光器件和灯。包括以半导体层（30）形成到衬底（2）的主表面（20）的外延步骤，在半导体层（30）上形成保护膜的掩蔽步骤，半导体层去除步骤通过激光照射去除保护膜和半导体层（30）以露出基板（2），减小基板（2）的厚度的研磨步骤，抛光基板（2）的抛光步骤，激光在衬底（2）的内部提供加工标记的处理步骤，在形成具有粗糙表面的衬底（2）的分割表面的同时产生多个发光器件（1）的划分步骤。

5. 发明申请

US20090078951A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：US20090078951A1
公开(公告)日：2009-03-26
申请号：US11994549
申请日：2006-06-30
申请人： Hisayuki Miki , Hironao Shinohara , Koji Kamei
发明人： Hisayuki Miki , Hironao Shinohara , Koji Kamei
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2933/0083
摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency.The inventive gallium nitride-based compound semiconductor light-emitting device has a gallium nitride-based compound semiconductor layer structure comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, on a substrate, wherein a positive electrode provided on the p-type semiconductor layer is a reflective positive electrode comprising a transparent material layer and a reflective metal layer formed on the transparent material layer.
摘要翻译：本发明的目的是提供一种具有反射性正极的氮化镓系化合物半导体发光元件，其具有优异的光提取效率。本发明的氮化镓系化合物半导体发光元件在基板上具有含有n型半导体层，发光层和p型半导体层的氮化镓系化合物半导体层结构，设置在p型半导体层上的电极是包括透明材料层和形成在透明材料层上的反射金属层的反射性正极。

6. 发明申请

US20090152585A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：US20090152585A1
公开(公告)日：2009-06-18
申请号：US12065970
申请日：2006-09-05
申请人： Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
发明人： Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/0095 , H01L33/32 , H01L33/42
摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.
摘要翻译：本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需要低驱动电压（Vf）。本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上，以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。

7. 发明授权

US08927348B2 Method of manufacturing group-III nitride semiconductor light-emitting device, and group-III nitride semiconductor light-emitting device, and lamp 有权
标题翻译： III族氮化物半导体发光元件和III族氮化物半导体发光元件的制造方法以及灯
公开(公告)号：US08927348B2
公开(公告)日：2015-01-06
申请号：US12992232
申请日：2009-05-12
申请人： Susumu Sugano , Hisayuki Miki , Hironao Shinohara
发明人： Susumu Sugano , Hisayuki Miki , Hironao Shinohara
IPC分类号： H01L21/20 , H01L33/00 , H01L33/22 , H01L33/16 , H01L33/20
CPC分类号： H01L33/0095 , H01L24/32 , H01L33/16 , H01L33/20 , H01L33/22 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/10155 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer (30) so as to a main surface (20) of a substrate (2), a masking step of forming a protective film on the semiconductor layer (30), a semiconductor layer removal step of removing the protective film and the semiconductor layer (30) by laser irradiation to expose the substrate (2), a grinding step of reducing the thickness of the substrate (2), a polishing step of polishing the substrate (2), a laser processing step of providing processing marks to the inside of the substrate (2), a division step of creating a plurality of light-emitting devices (1) while forming a division surface of the substrate (2) to have a rough surface.
摘要翻译：提供一种III族氮化物半导体发光器件的制造方法，其中可以获得内部量子效率和光提取效率优异的发光器件，III族氮化物半导体发光器件和灯。包括以半导体层（30）形成到衬底（2）的主表面（20）的外延步骤，在半导体层（30）上形成保护膜的掩模步骤，半导体层去除步骤通过激光照射去除保护膜和半导体层（30）以露出基板（2），减小基板（2）的厚度的研磨步骤，抛光基板（2）的抛光步骤，激光在衬底（2）的内部提供加工标记的处理步骤，在形成具有粗糙表面的衬底（2）的分割表面的同时产生多个发光器件（1）的划分步骤。

8. 发明授权

US07847314B2 Gallium nitride-based compound semiconductor light-emitting device 有权
标题翻译：氮化镓系化合物半导体发光元件
公开(公告)号：US07847314B2
公开(公告)日：2010-12-07
申请号：US12065970
申请日：2006-09-05
申请人： Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
发明人： Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L33/025 , H01L33/0095 , H01L33/32 , H01L33/42
摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.
摘要翻译：本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需要低驱动电压（Vf）。本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上，以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。

9. 发明授权

US07972952B2 Compound semiconductor light-emitting device and method for manufacturing the same 有权
标题翻译：化合物半导体发光器件及其制造方法
公开(公告)号：US07972952B2
公开(公告)日：2011-07-05
申请号：US12095175
申请日：2007-12-06
申请人： Naoki Fukunaga , Hironao Shinohara
发明人： Naoki Fukunaga , Hironao Shinohara
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32 , H01L33/38 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2933/0016 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A compound semiconductor light-emitting device which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, that are made of a compound semiconductor, formed on a substrate, the n-type semiconductor layer and the p-type semiconductor layer are stacked so as to interpose the light-emitting layer therebetween, a first conductive transparent electrode and a second conductive electrode. The first conductive transparent electrode is made of an IZO film containing an In2O3 crystal having a bixbyite structure. Also discussed is a method of manufacturing the device.
摘要翻译：一种化合物半导体发光器件，包括由化合物半导体制成的n型半导体层，发光层和p型半导体层，形成在衬底上，n型半导体层和堆叠p型半导体层以便在其间插入发光层，第一导电透明电极和第二导电电极。第一导电透明电极由含有二氧化硅结构的In 2 O 3晶体的IZO膜制成。还讨论了制造该装置的方法。

10. 发明授权

US08436396B2 Semiconductor light emitting element, method for manufacturing semiconductor light emitting element, and lamp 有权
标题翻译：半导体发光元件，半导体发光元件的制造方法以及灯
公开(公告)号：US08436396B2
公开(公告)日：2013-05-07
申请号：US12993733
申请日：2009-05-20
申请人： Hironao Shinohara , Naoki Fukunaga
发明人： Hironao Shinohara , Naoki Fukunaga
IPC分类号： H01L33/00 , H01L29/00
CPC分类号： H01L33/42 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor light-emitting device (1) of the present invention includes a substrate (101); a laminate semiconductor layer (20) formed by sequentially laminating an n-type semiconductor layer (104), a light-emitting layer (105), and a p-type semiconductor layer (106) on the substrate (101); and a translucent electrode layer (109) formed on a top surface (106a) of the p-type semiconductor layer (106), wherein the translucent electrode layer (109) contains a dopant element, a content of the dopant element within the translucent electrode layer (109) decreases gradually toward the interface (109a) between the p-type semiconductor layer (106) and the translucent electrode layer (109), and in the translucent electrode layer (109) is formed a diffusion region in which an element constituting the p-type semiconductor layer (106) is diffused from the interface (109a) toward the inside of the translucent electrode layer (109).
摘要翻译：本发明的半导体发光装置（1）包括：基板（101）; 通过在基板（101）上依次层叠n型半导体层（104），发光层（105）和p型半导体层（106）而形成的层叠半导体层（20）。以及形成在所述p型半导体层（106）的上表面（106a）上的透光性电极层（109），其中，所述透光性电极层（109）含有掺杂剂元素，所述透光性电极内的所述掺杂剂元素的含量层（109）朝向p型半导体层（106）和透光性电极层（109）的界面（109a）逐渐减小，在透光性电极层（109）中形成有构成 p型半导体层（106）从界面（109a）朝向透光性电极层（109）的内部扩散。

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