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    • 5. 发明授权
    • Thin film transistor display panel and manufacturing method thereof
    • 薄膜晶体管显示面板及其制造方法
    • US08884291B2
    • 2014-11-11
    • US13172200
    • 2011-06-29
    • Su-Hyoung KangYoon Ho KhangDong Jo KimHyun Jae Na
    • Su-Hyoung KangYoon Ho KhangDong Jo KimHyun Jae Na
    • H01L29/04H01L29/786H01L29/417H01L29/45
    • H01L27/1248H01L23/291H01L23/3171H01L29/41733H01L29/45H01L29/78606H01L29/7869H01L2924/0002H01L2924/00
    • A thin film transistor array panel and a manufacturing method capable of forming an insulating layer made of different materials for a portion contacting an oxide semiconductor and a second portion without an additional process. The thin film transistor array panel includes: a gate electrode; a source electrode and a drain electrode spaced apart from each other, each of the source and drain electrodes comprising a lower layer and an upper layer; an insulating layer disposed between the gate electrode and the source and drain electrodes; a semiconductor, the source electrode and the drain electrode being electrically connected to the semiconductor; a first passivation layer contacting the lower layer of the source and drain electrodes but not contacting the upper layer of the source and drain electrodes; and a second passivation layer disposed on the upper layer of the source and drain electrodes. The first passivation layer may be made of silicon oxide, and the second passivation may be made of silicon nitride.
    • 一种薄膜晶体管阵列面板和能够形成由不同材料制成的绝缘层的制造方法,用于与氧化物半导体和第二部分接触的部分,而不需要额外的工艺。 薄膜晶体管阵列面板包括:栅电极; 源电极和漏电极彼此间隔开,源极和漏极中的每一个包括下层和上层; 绝缘层,设置在所述栅极电极和所述源极和漏极之间; 半导体,源电极和漏极电连接到半导体; 第一钝化层接触源极和漏极的下层,但不接触源极和漏极的上层; 以及设置在源电极和漏电极的上层上的第二钝化层。 第一钝化层可以由氧化硅制成,并且第二钝化可以由氮化硅制成。
    • 10. 发明授权
    • Thin film transistor substrate including disconnection prevention member
    • 薄膜晶体管基板,包括防断断部件
    • US08427623B2
    • 2013-04-23
    • US12816591
    • 2010-06-16
    • Se-Hwan YuHyang-Shik KongSu-Hyoung Kang
    • Se-Hwan YuHyang-Shik KongSu-Hyoung Kang
    • G02F1/1333G02F1/1343G02F1/1345
    • G02F1/136286G02F2001/13629
    • A thin film transistor array panel including a display area having a gate line, a data line insulated from and intersecting the gate line, a thin film transistor connected to the gate line and the data line, and a pixel electrode connected to the thin film transistor, and a peripheral area formed on the circumference of the display area, according to an exemplary embodiment of the present invention, includes: a driving signal line formed with the same layer as the gate line in the peripheral area and receiving an external signal; a connection signal line formed with the same layer as the data line in the peripheral area; a disconnection prevention member overlapping the side surface of the connection signal line on the connection signal line; and a connection assistance member formed on the disconnection prevention member and connecting the driving signal line and the connection signal line.
    • 一种薄膜晶体管阵列面板,包括具有栅极线的显示区域,与栅极线绝缘并与之相交的数据线,连接到栅极线和数据线的薄膜晶体管,以及连接到薄膜晶体管的像素电极 以及形成在显示区域的圆周上的周边区域,根据本发明的示例性实施例,包括:形成与周边区域中的栅极线相同层并且接收外部信号的驱动信号线; 连接信号线,其与周边区域中的数据线形成相同的层; 断开防止部件与连接信号线上的连接信号线的侧面重叠; 以及连接辅助构件,其形成在所述防止断开构件上并且连接所述驱动信号线和所述连接信号线。