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1. 发明申请

US20120037995A1 SEMICONDUCTOR DEVICE AND RELATED METHOD OF FABRICATION 有权
标题翻译：半导体器件及相关制造方法
公开(公告)号：US20120037995A1
公开(公告)日：2012-02-16
申请号：US13175976
申请日：2011-07-05
申请人： Yongdon Kim , Daeshik Kim
发明人： Yongdon Kim , Daeshik Kim
IPC分类号： H01L27/088
CPC分类号： H01L29/0847 , H01L29/41758 , H01L29/665 , H01L29/66575 , H01L29/7833
摘要： A semiconductor device comprises a device isolation pattern, an active region, a gate pattern, a first source/drain region, and a first barrier region. The device isolation pattern defines an active portion in a semiconductor substrate and the active portion comprises first and second sidewalls extending in a first direction and doped with a first conductive type dopant. The gate pattern extends in a second direction perpendicular to the first direction to cross over the active portion. The first source/drain region and the first barrier region are disposed in the active portion at one side of the gate pattern. The first barrier region is disposed between the first source/drain region and the first sidewall and contacts the first sidewall. The first barrier region is doped with the first conductive type dopant and the first source/drain region is doped with a second conductive type dopant.
摘要翻译：半导体器件包括器件隔离图案，有源区，栅极图案，第一源极/漏极区域和第一势垒区域。器件隔离图案限定半导体衬底中的有源部分，并且有源部分包括在第一方向上延伸并掺杂有第一导电型掺杂剂的第一和第二侧壁。栅极图案沿垂直于第一方向的第二方向延伸以越过有效部分。第一源极/漏极区域和第一势垒区域设置在栅极图案的一侧的有源部分中。第一阻挡区域设置在第一源极/漏极区域和第一侧壁之间并且接触第一侧壁。第一阻挡区域掺杂有第一导电型掺杂剂，并且第一源极/漏极区域掺杂有第二导电型掺杂剂。

2. 发明授权

US08471339B2 Semiconductor device and related method of fabrication 有权
标题翻译：半导体器件及相关制造方法
公开(公告)号：US08471339B2
公开(公告)日：2013-06-25
申请号：US13175976
申请日：2011-07-05
申请人： Yongdon Kim , Daeshik Kim
发明人： Yongdon Kim , Daeshik Kim
IPC分类号： H01L21/70
CPC分类号： H01L29/0847 , H01L29/41758 , H01L29/665 , H01L29/66575 , H01L29/7833
摘要： A semiconductor device comprises a device isolation pattern, an active region, a gate pattern, a first source/drain region, and a first barrier region. The device isolation pattern defines an active portion in a semiconductor substrate and the active portion comprises first and second sidewalls extending in a first direction and doped with a first conductive type dopant. The gate pattern extends in a second direction perpendicular to the first direction to cross over the active portion. The first source/drain region and the first barrier region are disposed in the active portion at one side of the gate pattern. The first barrier region is disposed between the first source/drain region and the first sidewall and contacts the first sidewall. The first barrier region is doped with the first conductive type dopant and the first source/drain region is doped with a second conductive type dopant.
摘要翻译：半导体器件包括器件隔离图案，有源区，栅极图案，第一源极/漏极区域和第一势垒区域。器件隔离图案限定半导体衬底中的有源部分，并且有源部分包括在第一方向上延伸并掺杂有第一导电型掺杂剂的第一和第二侧壁。栅极图案沿垂直于第一方向的第二方向延伸以越过有效部分。第一源极/漏极区域和第一势垒区域设置在栅极图案的一侧的有源部分中。第一阻挡区域设置在第一源极/漏极区域和第一侧壁之间并且接触第一侧壁。第一阻挡区域掺杂有第一导电型掺杂剂，并且第一源极/漏极区域掺杂有第二导电型掺杂剂。

3. 发明授权

US08610208B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08610208B2
公开(公告)日：2013-12-17
申请号：US13183548
申请日：2011-07-15
申请人： Yongdon Kim , Eungkyu Lee , Sungryoul Bae , Soobang Kim , Dong-Eun Jang
发明人： Yongdon Kim , Eungkyu Lee , Sungryoul Bae , Soobang Kim , Dong-Eun Jang
IPC分类号： H01L29/78
CPC分类号： H01L29/7816 , H01L29/0653 , H01L29/0696 , H01L29/0865 , H01L29/1095 , H01L29/42368 , H01L29/4238 , H01L29/66681
摘要： A semiconductor device includes a body region of a first conductivity type and a gate pattern disposed on the body region. The gate pattern has a linear portion extending in a first direction and having a uniform width and a bending portion extending from one end of the linear portion. The portion of a channel region located beneath the bending portion constitutes a channel whose length is greater than the length of the channel constituted by the portion of the channel region located beneath the linear portion.
摘要翻译：半导体器件包括第一导电类型的主体区域和设置在身体区域上的栅极图案。栅极图案具有在第一方向上延伸并且具有均匀宽度的直线部分和从直线部分的一端延伸的弯曲部分。位于弯曲部分下方的通道区域的部分构成长度大于由位于直线部分下方的通道区域的部分构成的通道的长度的通道。

4. 发明申请

US20120037986A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120037986A1
公开(公告)日：2012-02-16
申请号：US13183548
申请日：2011-07-15
申请人： Yongdon Kim , Eungkyu Lee , Sungryoul Bae , Soobang Kim , Dong-Eun Jang
发明人： Yongdon Kim , Eungkyu Lee , Sungryoul Bae , Soobang Kim , Dong-Eun Jang
IPC分类号： H01L29/78
CPC分类号： H01L29/7816 , H01L29/0653 , H01L29/0696 , H01L29/0865 , H01L29/1095 , H01L29/42368 , H01L29/4238 , H01L29/66681
摘要： A semiconductor device includes a body region of a first conductivity type and a gate pattern disposed on the body region. The gate pattern has a linear portion extending in a first direction and having a uniform width and a bending portion extending from one end of the linear portion. The portion of a channel region located beneath the bending portion constitutes a channel whose length is greater than the length of the channel constituted by the portion of the channel region located beneath the linear portion.
摘要翻译：半导体器件包括第一导电类型的主体区域和设置在身体区域上的栅极图案。栅极图案具有在第一方向上延伸并且具有均匀宽度的直线部分和从直线部分的一端延伸的弯曲部分。位于弯曲部分下方的通道区域的部分构成长度大于由位于直线部分下方的通道区域的部分构成的通道的长度的通道。

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