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    • 3. 发明申请
    • Method of forming a metal wiring in a semiconductor device
    • 在半导体器件中形成金属布线的方法
    • US20070006451A1
    • 2007-01-11
    • US11475166
    • 2006-06-27
    • Yong-Woo LeeJae-Seung HwangDae-Hyun Jang
    • Yong-Woo LeeJae-Seung HwangDae-Hyun Jang
    • H01R43/00
    • H01L21/7685H01L21/32139Y10T29/49117
    • Example embodiments of the present invention relate to a method of forming a metal wiring in a semiconductor device. Other example embodiments of the present invention relate to a method of forming a metal wiring in a semiconductor device without a generation of a bridge between adjacent metal wirings. In a method of forming a metal wiring in a semiconductor device, at least one metal layer and at least one barrier layer may be sequentially formed on a substrate. A metal blocking layer may be formed on the at least one barrier metal layer. A hard mask layer may be formed on the metal blocking layer. A hard mask pattern may be formed on the metal blocking layer by etching the hard mask layer without an exposure of the at least one barrier metal layer. A metal blocking layer pattern may be formed on the at least one barrier metal layer by etching the metal blocking layer using the hard mask pattern as an etching mask. The metal wiring having at least one metal layer pattern and at least one barrier metal layer pattern may be formed on the substrate by etching the at least one barrier metal layer and the at least one metal layer using the hard mask pattern as an etching mask. The metal wiring having a reduced width may be obtained without a failure (e.g., a bridge).
    • 本发明的示例性实施例涉及在半导体器件中形成金属布线的方法。 本发明的其他示例性实施例涉及在半导体器件中形成金属布线而不在相邻金属布线之间产生桥的方法。 在半导体器件中形成金属布线的方法中,可以在衬底上依次形成至少一个金属层和至少一个阻挡层。 金属阻挡层可以形成在至少一个阻挡金属层上。 可以在金属阻挡层上形成硬掩模层。 可以通过在不暴露至少一个阻挡金属层的情况下蚀刻硬掩模层而在金属阻挡层上形成硬掩模图案。 通过使用硬掩模图案作为蚀刻掩模蚀刻金属阻挡层,可以在至少一个阻挡金属层上形成金属阻挡层图案。 通过使用硬掩模图案作为蚀刻掩模蚀刻至少一个阻挡金属层和至少一个金属层,可以在基板上形成具有至少一个金属层图案和至少一个阻挡金属层图案的金属布线。 可以获得具有减小的宽度的金属布线而没有故障(例如桥)。
    • 4. 发明授权
    • Method of forming a metal wiring in a semiconductor device
    • 在半导体器件中形成金属布线的方法
    • US07452807B2
    • 2008-11-18
    • US11475166
    • 2006-06-27
    • Yong-Woo LeeJae-Seung HwangDae-Hyun Jang
    • Yong-Woo LeeJae-Seung HwangDae-Hyun Jang
    • H01L21/44
    • H01L21/7685H01L21/32139Y10T29/49117
    • Example embodiments of the present invention relate to a method of forming a metal wiring in a semiconductor device. Other example embodiments of the present invention relate to a method of forming a metal wiring in a semiconductor device without a generation of a bridge between adjacent metal wirings. In a method of forming a metal wiring in a semiconductor device, at least one metal layer and at least one barrier layer may be sequentially formed on a substrate. A metal blocking layer may be formed on the at least one barrier metal layer. A hard mask layer may be formed on the metal blocking layer. A hard mask pattern may be formed on the metal blocking layer by etching the hard mask layer without an exposure of the at least one barrier metal layer. A metal blocking layer pattern may be formed on the at least one barrier metal layer by etching the metal blocking layer using the hard mask pattern as an etching mask. The metal wiring having at least one metal layer pattern and at least one barrier metal layer pattern may be formed on the substrate by etching the at least one barrier metal layer and the at least one metal layer using the hard mask pattern as an etching mask. The metal wiring having a reduced width may be obtained without a failure (e.g., a bridge).
    • 本发明的示例性实施例涉及在半导体器件中形成金属布线的方法。 本发明的其他示例性实施例涉及在半导体器件中形成金属布线而不在相邻金属布线之间产生桥的方法。 在半导体器件中形成金属布线的方法中,可以在衬底上依次形成至少一个金属层和至少一个阻挡层。 金属阻挡层可以形成在至少一个阻挡金属层上。 可以在金属阻挡层上形成硬掩模层。 可以通过在不暴露至少一个阻挡金属层的情况下蚀刻硬掩模层而在金属阻挡层上形成硬掩模图案。 通过使用硬掩模图案作为蚀刻掩模蚀刻金属阻挡层,可以在至少一个阻挡金属层上形成金属阻挡层图案。 通过使用硬掩模图案作为蚀刻掩模蚀刻至少一个阻挡金属层和至少一个金属层,可以在基板上形成具有至少一个金属层图案和至少一个阻挡金属层图案的金属布线。 可以获得具有减小的宽度的金属布线而没有故障(例如桥)。
    • 6. 发明授权
    • Scan driver, display device having the same and method of driving a display device
    • 扫描驱动器,具有相同的显示装置和驱动显示装置的方法
    • US08872752B2
    • 2014-10-28
    • US13648505
    • 2012-10-10
    • Sung-Man KimBong-Jun LeeShin-Tack KangHyeong-Jun ParkYong-Woo Lee
    • Sung-Man KimBong-Jun LeeShin-Tack KangHyeong-Jun ParkYong-Woo Lee
    • G09G3/36
    • G09G3/3677G09G3/3614G09G2310/0248G11C19/184
    • A scan driver drives a display device having a plurality of gate lines transferring scan signals, and a plurality of source lines transferring data signals. The scan driver includes a shift register and a multiple signal applying unit. The shift register includes a plurality of cascade-connected stages, each stage having an output terminal electrically connected to a respective one of the plurality of gate lines. The multiple signal applying unit applies a sub scan signal and a main scan signal. The sub scan signal and the main scan signal sequentially activate each of the plurality of gate lines. Therefore, the scan lines receive the scan signal twice, so that the liquid crystal capacitors electrically connected to the gate lines receive the data voltage twice. As a result, even though the time for charging the liquid crystal capacitors may be reduced, the liquid crystal capacitors may be fully charged to enhance display quality.
    • 扫描驱动器驱动具有传送扫描信号的多条栅极线的显示装置和传送数据信号的多条源极线。 扫描驱动器包括移位寄存器和多信号施加单元。 移位寄存器包括多个级联连接的级,每级具有电连接到多条栅极线中的相应一条栅线的输出端。 多信号施加单元施加副扫描信号和主扫描信号。 子扫描信号和主扫描信号顺序地激活多条栅极线中的每一条。 因此,扫描线接收扫描信号两次,使得电连接到栅极线的液晶电容器接收数据电压两次。 结果,即使可以减少液晶电容器的充电时间,液晶电容器也可能被充满电以提高显示质量。