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1. 发明授权

US06654520B2 Periodically poled optical fiber and method for the manufacture thereof 失效
公开(公告)号：US06654520B2
公开(公告)日：2003-11-25
申请号：US09961259
申请日：2001-09-25
申请人： Yong-Gyu Choi , Jong-Bae Kim , Doo-Hee Cho , Kyong-Hon Kim
发明人： Yong-Gyu Choi , Jong-Bae Kim , Doo-Hee Cho , Kyong-Hon Kim
IPC分类号： G02B634
CPC分类号： G02F1/383 , G02F1/3558
摘要： The present invention relates to the fabrication of an optical device; and, more particularly to an electrode for fabricating periodically poled optical fibers and a fabrication method of periodically poled optical fibers using the electrode. To fabricate periodically poled optical fibers for improving the effect of three wave mixing in accordance with the second-order nonlinear optical phenomenon, the periodically poled optical fibers of the present invention is formed by using one or more electrodes with holes or grooves for a period satisfying the quasi phase matching condition between light waves in use. Also, using the electrodes described above, one or more holes or one or more grooves are formed on the surface of the optical fiber around the core in its length direction, and thereby make an optical fiber poled periodically.

2. 发明授权

US06413891B1 Glass material suitable for a waveguide of an optical amplifier 失效
标题翻译：适用于光放大器波导的玻璃材料
公开(公告)号：US06413891B1
公开(公告)日：2002-07-02
申请号：US09689394
申请日：2000-10-11
申请人： Doo-Hee Cho , Yong-Gyu Choi , Kyong-Hon Kim
发明人： Doo-Hee Cho , Yong-Gyu Choi , Kyong-Hon Kim
IPC分类号： C03C312
CPC分类号： C03C13/048 , C03C3/122 , C03C3/253 , H01S3/177
摘要： Glasses of the present invention are tellurite and oxyhalide glasses doped with rare-earth ion, which can be applied to highly efficient optical amplifiers and lasers for optical communication. They are thermally and chemically stable during and after the fabrication processes of the optical fiber. The glass material includes 20˜70 mole % of TeO2, a heavy metal oxide, 0.001˜10 mole % of a rare earth ion dopant, 5˜30 mole % of MO, M being selected from a group consisting of Mg, Ca, Sr, Ba, Zn and Pb, and optionally 1˜20 mole % of R2O, R being selected from a group consisting of Li, Na, K, Rb and Cs. In the composition of the glass, 3˜18 mole % of MO and R2O may be substituted by the metal halides. The glasses of the present invention are similar in phonon energy to the conventional tellurite glasses not to increase the non-radiative transition rate. Further, the fluorescence lifetime is additionally increased in case of partial substitution of oxide to halide.
摘要翻译：本发明的玻璃是掺杂有稀土离子的碲酸盐和卤氧化物玻璃，其可以应用于用于光通信的高效光放大器和激光器。它们在光纤的制造过程中和之后是热和化学稳定的。玻璃材料包括20〜70摩尔％的TeO 2，重金属氧化物，0.001〜10摩尔％的稀土离子掺杂剂，5〜30摩尔％的MO，M选自Mg，Ca，Sr ，Ba，Zn和Pb，以及任选的1-20摩尔％的R 20，R选自Li，Na，K，Rb和Cs。在玻璃的组成中，3〜18摩尔％的MO和R2O可以被金属卤化物取代。本发明的玻璃在声子能量方面与常规的碲化物玻璃类似，不增加非辐射跃迁速率。此外，在将氧化物部分置换为卤化物的情况下，荧光寿命另外增加。

3. 发明授权

US06549330B1 Optical gain fiber doped with rare earth ions 失效
标题翻译：掺杂稀土离子的光增益光纤
公开(公告)号：US06549330B1
公开(公告)日：2003-04-15
申请号：US09659630
申请日：2000-09-12
申请人： Yong-Gyu Choi , Dong-Sung Lim , Doo-Hee Cho , Kyong-Hon Kim
发明人： Yong-Gyu Choi , Dong-Sung Lim , Doo-Hee Cho , Kyong-Hon Kim
IPC分类号： H01S314
CPC分类号： H01S3/06716 , H01S3/1606 , H01S3/1616 , H01S2301/02
摘要： An optical gain fiber of the present invention is doped with rare earth ions for improving a gain efficiency of a certain transition of the rare earth ions by inhibiting an undesirable amplified spontaneous emission. The optical gain fiber for amplifying an optical signal, includes a core doped with a first rare-earth ion in a portion thereof for amplifying the optical signal, and a clad doped with a second rare earth ion for absorbing an undesirable amplified spontaneous emission (ASE) emitted from the first rare earth ion, wherein the portion of the core and the potion of the clad are separated by the remaining portions of the core and the clad.
摘要翻译：本发明的光增益光纤掺杂有稀土离子，用于通过抑制不期望的放大自发发射来提高稀土离子一定转变的增益效率。用于放大光信号的光增益光纤包括在其一部分掺杂有第一稀土离子用于放大光信号的芯，以及掺杂有第二稀土离子的包层，用于吸收不期望的放大自发辐射（ASE ），其中芯的部分和包层的部分被芯和包层的剩余部分分开。

4. 发明授权

US06583927B2 Optical amplifier incorporating therein holmium-doped optical fiber 失效
标题翻译：掺入钬掺杂光纤的光放大器
公开(公告)号：US06583927B2
公开(公告)日：2003-06-24
申请号：US09963649
申请日：2001-09-27
申请人： Yong-Gyu Choi , Bong-Je Park , Kyong-Hon Kim
发明人： Yong-Gyu Choi , Bong-Je Park , Kyong-Hon Kim
IPC分类号： H01S300
CPC分类号： H01S3/06716 , H01S3/06754 , H01S3/161 , H01S3/1618
摘要： An optical amplifier of the present invention includes a pump source for generating a pumping light, a wavelength division multiplexing (WDM) coupler for multiplexing an inputted optical signal and the pumping light and an optical fiber including a core and a clad, wherein the core has holmium ions less than 0.5 mole % and the clad has ions selected from the group consisting of transition metal ions, rare earth ions and a combination thereof. In addition, the phonon energy of a host material is less than 600 cm−1 and an absorption band at short-wavelength side is shorter than 530 nm.
摘要翻译：本发明的光放大器包括用于产生泵浦光的泵浦源，用于多路复用输入的光信号的波分复用（WDM）耦合器和泵浦光以及包括芯和包层的光纤，其中芯具有钬离子小于0.5摩尔％，并且包层具有选自过渡金属离子，稀土离子及其组合的离子。此外，主体材料的声子能量小于600cm -1，短波长侧的吸收带短于530nm。

5. 发明申请

US20150061154A1 SEMICONDUCTOR DEVICES INCLUDING INSULATING EXTENSION PATTERNS BETWEEN ADJACENT LANDING PADS AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体器件，其中包括相邻接线垫之间的绝缘扩展图案及其制造方法
公开(公告)号：US20150061154A1
公开(公告)日：2015-03-05
申请号：US14445829
申请日：2014-07-29
申请人： Yong-Gyu Choi , Hyun-Chul Kim , Seung-hee Ko
发明人： Yong-Gyu Choi , Hyun-Chul Kim , Seung-hee Ko
IPC分类号： H01L23/522 , H01L23/528
CPC分类号： H01L23/5228 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L27/0207 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10876 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.
摘要翻译：半导体存储器件包括分别包括位线的多个图形结构和从衬底突出的侧壁上的绝缘间隔物。多个绝缘延伸图案设置在图案结构的相对的侧壁上，并且分别从相对的侧壁的上部沿着绝缘间隔件延伸到衬底，使得相对的侧壁的下部分没有扩展图案。在相邻图案结构的相对侧壁的下部之间的衬底上设置多个埋入接触图案。还讨论了相关的制造方法。

6. 发明授权

US07279741B2 Semiconductor device with increased effective channel length and method of manufacturing the same 有权
标题翻译：具有增加有效通道长度的半导体器件及其制造方法
公开(公告)号：US07279741B2
公开(公告)日：2007-10-09
申请号：US10845688
申请日：2004-05-13
申请人： Chang-Hyun Cho , Soo-Ho Shin , Yong-Gyu Choi , Tae-Young Chung
发明人： Chang-Hyun Cho , Soo-Ho Shin , Yong-Gyu Choi , Tae-Young Chung
IPC分类号： H01L29/76
CPC分类号： H01L29/6659 , H01L21/823418 , H01L21/823468 , H01L29/6656
摘要： A semiconductor device with an increased effective channel length and a method of manufacturing the same. The device includes a semiconductor substrate, a gate insulating layer disposed on the semiconductor substrate, a gate electrode structure disposed on a predetermined portion of the gate insulating layer, an insulating layer for preventing short channel disposed on the surface of the resultant structure where the gate electrode structure is disposed, and a source region and a drain region disposed in the semiconductor substrate on either side of the gate electrode structure. Both the source region and the drain region are spaced apart from the gate electrode structure by the thickness of the insulating layer. The channel length of a MOS transistor can be thereby increased.
摘要翻译：具有增加的有效通道长度的半导体器件及其制造方法。该器件包括半导体衬底，设置在半导体衬底上的栅极绝缘层，设置在栅极绝缘层的预定部分上的栅极电极结构，用于防止短路通道的绝缘层，所述绝缘层设置在所述结构的表面上，电极结构，以及设置在栅电极结构的任一侧的半导体衬底中的源区和漏区。源极区域和漏极区域与栅电极结构隔开绝缘层的厚度。可以提高MOS晶体管的沟道长度。

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