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    • 8. 发明授权
    • Method for manufacturing a semiconductor device capable of preventing the decrease of the width of an active region
    • 一种能够防止活性区域的宽度减小的半导体装置的制造方法
    • US08530330B2
    • 2013-09-10
    • US12100455
    • 2008-04-10
    • Sang Tae AhnJa Chun KuEun Jeong KimWan Soo Kim
    • Sang Tae AhnJa Chun KuEun Jeong KimWan Soo Kim
    • H01L21/76
    • H01L21/823481H01L21/76224
    • A method for manufacturing a semiconductor device that can prevent the loss of an isolation structure and that can also stably form epi-silicon layers is described. The method for manufacturing a semiconductor device includes defining trenches in a semiconductor substrate having active regions and isolation regions. The trenches are partially filled with a first insulation layer. An etch protection layer is formed on the surfaces of the trenches that are filled with the first insulation layer. A second insulation layer is filled in the trenches formed with the etch protection layer to form an isolation structure in the isolation regions of the semiconductor substrate. Finally, portions of the active regions of the semiconductor substrate are recessed such that the isolation structure has a height higher than the active regions of the semiconductor substrate.
    • 描述了可以防止隔离结构的损失并且还可以稳定地形成外延硅层的半导体器件的制造方法。 半导体器件的制造方法包括在具有有源区和隔离区的半导体衬底中限定沟槽。 沟槽部分地填充有第一绝缘层。 在填充有第一绝缘层的沟槽的表面上形成蚀刻保护层。 在由蚀刻保护层形成的沟槽中填充第二绝缘层,以在半导体衬底的隔离区域中形成隔离结构。 最后,半导体衬底的有源区的部分被凹入,使得隔离结构的高度高于半导体衬底的有源区。