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1. 发明授权

US06583971B1 Elimination of electric-pop noise in MR/GMR device 失效
标题翻译：消除MR / GMR设备中的电流噪声
公开(公告)号：US06583971B1
公开(公告)日：2003-06-24
申请号：US09265083
申请日：1999-03-09
申请人： Yong Shen , Kwok Kam Leung , Hiroshi Kiyono , Tetsuo Miyazaki
发明人： Yong Shen , Kwok Kam Leung , Hiroshi Kiyono , Tetsuo Miyazaki
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/313 , G11B5/3903 , G11B5/3909 , G11B2005/0016 , G11B2005/3996
摘要： The invention relates to a magnetoresistive device comprising: a bottom shield; a top shield; an AMR/GMR device; a first insulating gap layer between said bottom shield and said AMR/GMR; a second insulating gap layer between said AMR/GMR and said top shield; and conductive layer contacting electrically both said AMR.GMR device to siaid bottom shield. Furthermore, similar active devices free of electric-pop noise also be disclosed.
摘要翻译：本发明涉及一种磁阻器件，包括：底部屏蔽; 顶层盾牌 AMR / GMR设备; 所述底屏蔽和所述AMR / GMR之间的第一绝缘间隙层; 所述AMR / GMR与所述顶部屏蔽之间的第二绝缘间隙层; 并且导电层将所述AMR.GMR器件电气接触到所述底部屏蔽。此外，还公开了没有电流噪声的类似有源器件。

2. 发明授权

US07256970B2 Elimination of electric-pop noise in MR/GMR device 失效
标题翻译：消除MR / GMR设备中的电流噪声
公开(公告)号：US07256970B2
公开(公告)日：2007-08-14
申请号：US10317878
申请日：2002-12-12
申请人： Yong Shen , Kwok Kam Leung , Hiroshi Kiyono , Tetsuo Miyazaki
发明人： Yong Shen , Kwok Kam Leung , Hiroshi Kiyono , Tetsuo Miyazaki
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/313 , G11B5/3903 , G11B5/3909 , G11B2005/0016 , G11B2005/3996
摘要： A magnetic reading head comprising: a bottom shield; a top shield; an AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer between said AMR and said top shield; a conductive layer contact at one end region of said MR and SAL. Furthermore, magnetic reading heads with GMR device free of electric-pop noise also are disclosed.
摘要翻译：一种磁读头，包括：底屏蔽; 顶层盾牌具有通过薄绝缘层分离的MR和SAL的AMR器件; 所述底屏蔽和所述AMR之间的第一绝缘间隙层; 所述AMR和所述顶部屏蔽之间的第二绝缘间隙层; 在所述MR和SAL的一个端部区域处的导电层接触。此外，还公开了具有没有电流噪声的GMR装置的磁读头。

3. 发明授权

US07158356B2 Elimination of electric-pop noise in a MR device 失效
标题翻译：消除MR设备中的电动噪音
公开(公告)号：US07158356B2
公开(公告)日：2007-01-02
申请号：US10792078
申请日：2004-03-03
申请人： Yong Shen , Kwok Kam Leung , Hiroshi Kiyono , Tetsuo Miyazaki
发明人： Yong Shen , Kwok Kam Leung , Hiroshi Kiyono , Tetsuo Miyazaki
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/313 , G11B5/3903 , G11B5/3909 , G11B2005/0016 , G11B2005/3996
摘要： The invention relates to a magnetic recording head comprising: a bottom shield; a top shield; and AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer between said AMR and said top shield; a conductive layer contact at one end region of said MR and SAL. Furthermore, magnetic recording heads with GMR device free of electric-pop noise also are disclosed.
摘要翻译：磁记录头技术领域本发明涉及一种磁记录头，包括：底屏蔽; 顶层盾牌和具有由绝缘层薄的MR和SAL分隔的AMR器件; 所述底屏蔽和所述AMR之间的第一绝缘间隙层; 所述AMR和所述顶部屏蔽之间的第二绝缘间隙层; 在所述MR和SAL的一个端部区域处的导电层接触。此外，还公开了具有没有电流噪声的GMR装置的磁记录头。

4. 发明申请

US20080019057A1 Elimination of electric-pop noise in MR/GMR device 审中-公开
标题翻译：消除MR / GMR设备中的电流噪声
公开(公告)号：US20080019057A1
公开(公告)日：2008-01-24
申请号：US11821825
申请日：2007-06-26
申请人： Yong Shen , Kwok Leung , Hiroshi Kiyono , Tetsuo Miyazaki
发明人： Yong Shen , Kwok Leung , Hiroshi Kiyono , Tetsuo Miyazaki
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/313 , G11B5/3903 , G11B5/3909 , G11B2005/0016 , G11B2005/3996
摘要： A magnetic reading head comprising: a bottom shield; a top shield; an AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer between said AMR and said top shield; a conductive layer contact at one end region of said MR and SAL. Furthermore, magnetic reading heads with GMR device free of electric-pop noise also are disclosed.
摘要翻译：一种磁读头，包括：底屏蔽; 顶层盾牌具有通过薄绝缘层分离的MR和SAL的AMR器件; 所述底屏蔽和所述AMR之间的第一绝缘间隙层; 所述AMR和所述顶部屏蔽之间的第二绝缘间隙层; 在所述MR和SAL的一个端部区域处的导电层接触。此外，还公开了具有没有电流噪声的GMR装置的磁读头。

5. 发明授权

US08547730B1 Method and system for providing a spin tunneling magnetic element having a crystalline barrier layer 有权
标题翻译：提供具有结晶阻挡层的自旋隧穿磁性元件的方法和系统
公开(公告)号：US08547730B1
公开(公告)日：2013-10-01
申请号：US12712085
申请日：2010-02-24
申请人： Yong Shen , Qunwen Leng
发明人： Yong Shen , Qunwen Leng
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01F10/3295 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F41/307 , H01L43/12
摘要： The method and system for providing a spin tunneling element are disclosed. The method and system include depositing a pinned layer, a barrier layer, and a free layer. The barrier layer has a first crystal structure and a texture. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The first ferromagnetic is adjacent to the second ferromagnetic layer and between the second ferromagnetic layer and the barrier layer. The first ferromagnetic layer has the first crystal structure and the texture, while the second ferromagnetic layer has a second crystal structure different from the first crystal structure.
摘要翻译：公开了用于提供自旋隧穿元件的方法和系统。该方法和系统包括沉积钉扎层，阻挡层和自由层。阻挡层具有第一晶体结构和纹理。自由层包括第一铁磁层和第二铁磁层。第一铁磁体与第二铁磁层相邻，并且在第二铁磁层与阻挡层之间。第一铁磁层具有第一晶体结构和纹理，而第二铁磁层具有与第一晶体结构不同的第二晶体结构。

6. 发明授权

US08077434B1 Perpendicular magnetic recording head having a recessed magnetic base layer 有权
标题翻译：具有凹陷磁性基底层的垂直磁记录头
公开(公告)号：US08077434B1
公开(公告)日：2011-12-13
申请号：US11942113
申请日：2007-11-19
申请人： Yong Shen , Lei Larry Zhang , Yingjian Chen , Ut Tran
发明人： Yong Shen , Lei Larry Zhang , Yingjian Chen , Ut Tran
IPC分类号： G11B5/147
CPC分类号： G11B5/1278 , G11B5/3116
摘要： A method and system for providing a magnetic transducer having an air-bearing surface (ABS) are described. The magnetic transducer includes a base layer, a perpendicular magnetic recording (PMR) pole on the base layer, an additional pole, a write shield, a write gap between the PMR pole and a portion of the write shield, and coil(s) that energize at least the additional pole. The base layer includes a first portion proximate to the ABS and a second portion recessed from the ABS. The first portion is nonmagnetic, while the second portion is magnetic. The PMR pole has a first front portion proximate to the ABS. The additional pole has a second front portion recessed from the ABS. At least a portion of the additional pole resides between the PMR pole and write shield. At least a portion of the write gap resides on the front portion of the PMR pole.
摘要翻译：描述了一种用于提供具有空气轴承表面（ABS）的磁换能器的方法和系统。磁换能器包括基层，基层上的垂直磁记录（PMR）极，附加极，写屏蔽，PMR极与写屏蔽的一部分之间的写间隙，以及线圈，至少激励附加极点。基层包括靠近ABS的第一部分和从ABS凹陷的第二部分。第一部分是非磁性的，而第二部分是磁性的。 PMR杆具有靠近ABS的第一前部。附加的杆具有从ABS凹入的第二前部。附加极点的至少一部分位于PMR极和写保护罩之间。写入间隙的至少一部分位于PMR极的前部。

7. 发明授权

US07389577B1 Method to fabricate an ESD resistant tunneling magnetoresistive read transducer 有权
标题翻译：制造耐ESD隧道磁阻读取传感器的方法
公开(公告)号：US07389577B1
公开(公告)日：2008-06-24
申请号：US11768883
申请日：2007-06-26
申请人： Changhe Shang , Yun-Fei Li , Yining Hu , Yong Shen
发明人： Changhe Shang , Yun-Fei Li , Yining Hu , Yong Shen
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method to fabricate a tunneling magnetoresistive (TMR) read transducer is disclosed. An insulative layer is deposited on a wafer substrate, and a bottom lead is deposited over the insulative layer. A laminated TMR layer, having a plurality of laminates, is deposited over the bottom lead. A TMR sensor having a stripe height is defined in the TMR layer, and a parallel resistor and first and second shunt resistors are also defined in the TMR layer. A top lead is deposited over the TMR sensor. The parallel resistor is electrically connected to the bottom lead and to the top lead. The first shunt resistor is electrically connected to the bottom lead and the wafer substrate, and the second shunt resistor is electrically connected to the top lead and the wafer substrate.
摘要翻译：公开了一种制造隧道磁阻（TMR）读出传感器的方法。绝缘层沉积在晶片衬底上，底部引线沉积在绝缘层上。具有多个层压体的叠层TMR层沉积在底部引线上。具有条纹高度的TMR传感器定义在TMR层中，并且还在TMR层中定义并联电阻器和第一和第二分流电阻器。顶部引线沉积在TMR传感器上。并联电阻器电连接到底部引线和顶部引线。第一分流电阻器电连接到底部引线和晶片衬底，并且第二分流电阻器电连接到顶部引线和晶片衬底。

8. 发明申请

US20050083606A1 Write head design with improved bump to control write saturation 失效
标题翻译：写头设计具有改进的凸块来控制写入饱和度
公开(公告)号：US20050083606A1
公开(公告)日：2005-04-21
申请号：US10687284
申请日：2003-10-15
申请人： Edward Lee , Katalin Pentek , Yong Shen , Sue Zhang
发明人： Edward Lee , Katalin Pentek , Yong Shen , Sue Zhang
IPC分类号： G11B5/127 , G11B5/147 , G11B5/60
CPC分类号： G11B5/60 , G11B5/127 , G11B5/147
摘要： A magnetic head having an air bearing surface (ABS) and a first pole tip. A second pole tip is spaced apart from and facing the upper end of the first pole tip across a write gap. A bump extends into a portion of the upper end of the first pole tip and a portion of the bottom end of the second pole tip, the bump being positioned away from the ABS. The bump defines a throat height of the first and second pole tips.
摘要翻译：具有空气轴承表面（ABS）和第一极端的磁头。第二极尖与间隙隔开并面对第一极尖的上端。凸块延伸到第一极尖端的上端的一部分和第二极尖的底端的一部分，凸块被定位成远离ABS。凸块限定第一和第二极尖的喉部高度。

9. 发明申请

US20050068677A1 Stitched write head with staircase P2 defined throat height 失效
标题翻译：缝编写头与楼梯P2定义喉部高度
公开(公告)号：US20050068677A1
公开(公告)日：2005-03-31
申请号：US10675736
申请日：2003-09-29
申请人： Yong Shen , Sue Zhang
发明人： Yong Shen , Sue Zhang
IPC分类号： G11B5/31 , G11B5/147
CPC分类号： G11B5/3116 , Y10T29/49032
摘要： A method of making a magnetic write head assembly, which has a head surface and a track width, comprises the steps of forming a first pole piece layer of a first pole piece which has a pole tip portion, a back gap portion which is recessed from the head surface and a yoke portion which is located between the pole tip and back gap portions, forming an insulation stack with at least one coil layer embedded therein on the yoke portion of the first pole piece layer, forming a pedestal of the first pole piece on the pole tip portion of the first pole piece layer, forming a write gap layer on the pedestal, forming on a substantially planar surface a first component of a second pole piece on the write gap layer with the width at the head surface which is greater than the track width and with a throat height which extends from the head surface into the head assembly where the first and second pole pieces first commence to separate after the head surface, forming a second component of the second pole piece which has a track width on the first component and, with the second component employed as a mask, ion milling the first component to define the first component with the track width.
摘要翻译：一种具有头表面和轨道宽度的磁写头组件的制造方法包括以下步骤：形成具有极尖部分的第一极片的第一极片层，头表面和磁轭部分，其位于极尖和后间隙部分之间，形成绝缘叠层，其中嵌有至少一个线圈层的第一极片层的磁轭部分，形成第一极片的基座在第一极片层的极尖部分上，在基座上形成写间隙层，在基本上平坦的表面上形成第二极片的第一部件在写间隙层上，其顶表面的宽度较大具有从头部表面延伸到头部组件中的轨道宽度和喉部高度，其中第一和第二极靴首先开始在头部表面之后分离，形成第二部分的第二部分 d极片，其具有在第一部件上的轨道宽度，并且将第二部件用作掩模，离子铣削第一部件以限定具有轨道宽度的第一部件。

10. 发明授权

US06195229B1 Thin film MR head and method of making wherein pole trim takes place at the wafer level 有权
标题翻译：薄膜MR磁头及其制造方法，其中磁极修整发生在晶片级
公开(公告)号：US06195229B1
公开(公告)日：2001-02-27
申请号：US09385844
申请日：1999-08-30
申请人： Yong Shen , Bertha Higa-Baral , Lien-Chang Wang
发明人： Yong Shen , Bertha Higa-Baral , Lien-Chang Wang
IPC分类号： G11B533
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3967 , G11B2005/3996 , Y10T29/49032 , Y10T29/49046
摘要： A method of manufacturing a thin film merged magnetic head including an inductive write structure and a magnetoresistive sensor uses a patterned protection layer to protect a second shield/bottom pole layer in regions spaced from the pole tip of the inductive write structure. A window is provided in the protection layer. During manufacture, the configuration comprises a first shield layer, a magnetoresistive element, a second shield layer serving as a bottom pole, a protection layer, a protection window, a write gap, a top pole, and a pole tip structure. The use of a protection layer and window results in the formation of channels in the second shield layer adjacent to a pedestal that supports the inductive write structure. The channels prevent magnetic flux from extending toward the second shield layer beyond the width of the pole tip structure. This structure reduces side writing with a consequent improvement in off-track performance. The width of the second shield layer allows the magnetoresistive element to be shielded.
摘要翻译：制造包括电感写入结构和磁阻传感器的薄膜合并磁头的方法使用图案化保护层来保护与电感写入结构的磁极末端隔开的区域中的第二屏蔽/底极层。在保护层中设置一个窗口。在制造时，该结构包括第一屏蔽层，磁阻元件，用作底极的第二屏蔽层，保护层，保护窗，写间隙，顶极和极尖结构。使用保护层和窗口导致在与支撑感性写入结构的基座相邻的第二屏蔽层中形成通道。通道防止磁通量向第二屏蔽层延伸超过极端结构的宽度。这种结构减少了侧面写入，从而改善了非轨道性能。第二屏蔽层的宽度允许屏蔽磁阻元件。

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