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1. 发明申请

US20060211185A1 Method for manufacturing transistor in semiconductor device 失效
标题翻译：在半导体器件中制造晶体管的方法
公开(公告)号：US20060211185A1
公开(公告)日：2006-09-21
申请号：US11154458
申请日：2005-06-16
申请人： Yong Kim , Se Jang , Jae Oh
发明人： Yong Kim , Se Jang , Jae Oh
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/823437 , H01L21/823412 , H01L21/823425 , H01L29/66537 , H01L29/6659 , H01L29/66621 , H01L29/7834
摘要： Disclosed herein is a method for manufacturing a transistor in a semiconductor device, which can improve the refresh characteristics of the device. The method comprises the steps of: providing a silicon substrate having active and field regions defined thereon; performing a first channel ion implantation process into the silicon substrate; sequentially forming a hard mask film and a photoresist pattern exposing a gate formation region on the substrate into which the first channel ion implantation process has been performed; performing a second channel ion implantation process into the substrate at a higher concentration than that of the first ion implantation process using the photoresist pattern as an ion implantation mask, so as to form doped regions in the substrate at the gate formation region and both sides adjacent thereto; etching a hard mask film using the photoresist pattern as an etch barrier; removing the photoresist pattern; etching the substrate using a portion of the hard mask film remaining after the etching as an etch barrier, so as to form a groove; removing the hard mask film remaining after the etching; forming a gate in the groove of the substrate from which the hard mask film has been removed; and forming source and drain regions on the substrate at both sides of the gate.
摘要翻译：这里公开了一种用于制造半导体器件中的晶体管的方法，其可以提高器件的刷新特性。该方法包括以下步骤：提供其上限定有活性和场区的硅衬底; 对硅衬底进行第一沟道离子注入工艺; 顺序地形成硬掩模膜和曝光已经进行了第一沟道离子注入工艺的衬底上的栅极形成区的光致抗蚀剂图案; 以比使用光致抗蚀剂图案作为离子注入掩模的第一离子注入工艺更高的浓度进行衬底中的第二沟道离子注入工艺，以便在栅极形成区域和两侧相邻的衬底中形成掺杂区域到; 使用光致抗蚀剂图案蚀刻硬掩模膜作为蚀刻阻挡层; 去除光致抗蚀剂图案; 使用蚀刻后残留的硬掩模膜的一部分作为蚀刻阻挡层蚀刻基板，以形成凹槽; 去除蚀刻后残留的硬掩模膜; 在已经去除了硬掩模膜的基板的凹槽中形成栅极; 以及在栅极两侧的衬底上形成源区和漏区。

2. 发明申请

US20060246671A1 Method of fabricating a transistor having a triple channel in a memory device 有权
标题翻译：在存储器件中制造具有三通道的晶体管的方法
公开(公告)号：US20060246671A1
公开(公告)日：2006-11-02
申请号：US11155833
申请日：2005-06-17
申请人： Se Jang , Yong Kim , Jae Oh
发明人： Se Jang , Yong Kim , Jae Oh
IPC分类号： H01L21/336 , H01L21/76
CPC分类号： H01L29/7851 , H01L27/105 , H01L27/1052 , H01L27/10876 , H01L27/10879 , H01L29/66621 , H01L29/66795
摘要： Disclosed is a method for fabricating a transistor of a memory device capable of preventing voids from being created when forming a low-resistant gate electrode. The method includes the steps of forming an active area by etching a semiconductor substrate, forming a field oxide layer in the semiconductor substrate and forming a recess by etching the field oxide layer. A gate insulation layer is formed along an upper surface of the active area and an exposed portion of the active area. A gate electrode is formed on the field oxide layer such that the gate electrode extends across an upper portion of the active area while being overlapped with a channel area and the recess. The first conductive layer to be patterned has the same thickness, so the low-resistant gate electrode is easily fabricated without forming the voids.
摘要翻译：公开了一种制造存储器件的晶体管的方法，该方法能够防止在形成低电阻栅电极时产生空隙。该方法包括以下步骤：通过蚀刻半导体衬底形成有源区，在半导体衬底中形成场氧化物层，并通过蚀刻场氧化物层形成凹陷。栅极绝缘层沿有源区的上表面和有源区的暴露部分形成。栅极电极形成在场氧化物层上，使得栅极电极延伸跨过有源区域的上部，同时与沟道区域和凹部重叠。待图案化的第一导电层具有相同的厚度，因此在不形成空隙的情况下容易地制造低电阻栅电极。

3. 发明申请

US20060244055A1 Transistor structure of memory device and method for fabricating the same 有权
公开(公告)号：US20060244055A1
公开(公告)日：2006-11-02
申请号：US11201951
申请日：2005-08-10
申请人： Se Jang , Yong Kim , Jae Oh , Jae Roh , Hyun Sohn
发明人： Se Jang , Yong Kim , Jae Oh , Jae Roh , Hyun Sohn
IPC分类号： H01L29/94
CPC分类号： H01L27/10876 , H01L27/10823 , H01L27/10826 , H01L27/10873 , H01L27/10879 , H01L29/66621 , H01L29/66795 , H01L29/7851
摘要： A memory device includes an active area protruding from a semiconductor substrate. A recess is formed in the active area. A field oxide layer is formed on the semiconductor substrate. A gate electrode extends across the active area while being overlapped with the recess. A gate insulation layer is interposed between the gate electrode and the active area. Source and drain areas are formed in the active area. The transistor structure above defines a recessed transistor structure if it is sectioned along a source-drain line and defines a Fin transistor structure if it is sectioned along a gate line. The transistor structure ensures sufficient data retention time and improves the current drivability while lowering the back bias dependency of a threshold voltage.

4. 发明申请

US20070148603A1 Method for forming pattern and method for fabricating LCD device using the same 有权
标题翻译：用于形成图案的方法和使用其制造LCD装置的方法
公开(公告)号：US20070148603A1
公开(公告)日：2007-06-28
申请号：US11640985
申请日：2006-12-19
申请人： Hye Lee , Jae Oh
发明人： Hye Lee , Jae Oh
IPC分类号： G03F7/26
CPC分类号： G03F7/0007 , G02F1/133512 , G02F1/133516 , G03F7/11 , G03F7/42
摘要： A method for forming a pattern and a method for fabricating an LCD device using the same is disclosed, wherein a photoresist layer is removed from a substrate without using a photoresist stripper, so that the pattern is formed with a low fabrication costs. The method comprising sequentially forming a pattern material layer, a transformed material layer and a photoresist layer on a substrate; patterning the photoresist layer by exposure and development using a mask; selectively etching the transformed material layer and the pattern material layer by using the patterned photoresist layer as a mask; and removing the transformed material layer and the patterned photoresist layer in a lift-off method by applying light.
摘要翻译：公开了一种用于形成图案的方法和使用该图案的LCD器件的制造方法，其中在不使用光致抗蚀剂剥离器的情况下从衬底去除光致抗蚀剂层，从而以低制造成本形成图案。该方法包括在衬底上依次形成图案材料层，变形材料层和光致抗蚀剂层; 通过使用掩模的曝光和显影来图案化光致抗蚀剂层; 通过使用图案化的光致抗蚀剂层作为掩模来选择性地蚀刻变形材料层和图案材料层; 以及通过施加光而以剥离方法去除转化的材料层和图案化的光致抗蚀剂层。

5. 发明申请

US20070042266A1 Electrolyte comprising eutectic mixture and electrochemical device using the same 有权
标题翻译：包含共晶混合物和使用其的电化学装置的电解质
公开(公告)号：US20070042266A1
公开(公告)日：2007-02-22
申请号：US11506216
申请日：2006-08-18
申请人： Jae Oh , Byoung Lee , Jae Park , Ji Park
发明人： Jae Oh , Byoung Lee , Jae Park , Ji Park
IPC分类号： H01M10/36 , H01M10/40
CPC分类号： C08K5/0008 , C08L33/02 , H01G9/038 , H01G11/56 , H01G11/58 , H01M10/0525 , H01M10/0565 , H01M10/0567 , H01M10/4235 , Y02E60/12 , Y02E60/13
摘要： Disclosed is an electrolyte comprising a eutectic mixture formed of: (a) an amide group-containing compound; and (b) a lithum-free ionizable salt. An electrochemical device comprising the electrolyte is also disclosed. The electrolyte improves the quality of and electrochemical device due to the excellent conductivity of the metal cation contained in the eutectic mixture, a broad electrochemical window and low viscosity. Additionally, since the eutectic mixture has excellent thermal and chemical stability, it is possible to solve the problems of evaporation, exhaustion and ignition of electrolytes, to minimize side reactions between constitutional elements of the device and the electrolyte, and to improve the safety of the electrochemical device.
摘要翻译：公开了一种电解质，其包含由以下物质形成的共晶混合物：（a）含酰胺基的化合物; 和（b）不含锂的可电离盐。还公开了包含电解质的电化学装置。由于共晶混合物中所含的金属阳离子的优异导电性，宽的电化学窗口和低粘度，电解质改善了电化学装置的质量。此外，由于共晶混合物具有优异的热稳定性和化学稳定性，因此可以解决电解质的蒸发，耗尽和点燃的问题，以使装置的结构元件和电解质之间的副反应最小化，并提高电解质的安全性电化学装置。

6. 发明申请

US20070001242A1 Thin film transistor device for liquid crystal display, and manufacturing method thereof 审中-公开
标题翻译：用于液晶显示器的薄膜晶体管器件及其制造方法
公开(公告)号：US20070001242A1
公开(公告)日：2007-01-04
申请号：US11452357
申请日：2006-06-14
申请人： Jong Kim , Jae Oh , Soo Kim
发明人： Jong Kim , Jae Oh , Soo Kim
IPC分类号： H01L29/94
CPC分类号： H01L29/4908 , G02F1/1368 , H01L29/66765
摘要： A thin film transistor device for a liquid crystal display, as embodied, includes a gate electrode on a transparent insulating substrate; a gate insulating film formed of a first glass composition covering the gate electrode; a semiconductor layer on the gate insulating film; and a source electrode and a drain electrode on the semiconductor layer.
摘要翻译：如实施例一样，用于液晶显示器的薄膜晶体管器件包括在透明绝缘基板上的栅电极; 由覆盖所述栅电极的第一玻璃组合物形成的栅极绝缘膜; 栅极绝缘膜上的半导体层; 以及半导体层上的源电极和漏电极。

7. 发明申请

US20060290268A1 Flat panel display and method for manufacturing the same 有权
标题翻译：平板显示器及其制造方法
公开(公告)号：US20060290268A1
公开(公告)日：2006-12-28
申请号：US11474363
申请日：2006-06-26
申请人： Jae Oh , Soo Kim
发明人： Jae Oh , Soo Kim
IPC分类号： H05B33/00 , H05B33/08
CPC分类号： H01L51/5253
摘要： A flat panel display includes a substrate, an array on the substrate, and a glass film formed by depositing glass powder over the substrate, including the array, melting the deposited glass powder over the array and hardening the deposited glass powder over the array.
摘要翻译：平板显示器包括基板，基板上的阵列和通过在包括该阵列的基板上沉积玻璃粉末而形成的玻璃膜，将沉积的玻璃粉末熔化在阵列上并使沉积的玻璃粉末在阵列上硬化。

8. 发明申请

US20060072182A1 Electrolyte comprising eutectic mixture and electrochromic device using the same 有权
公开(公告)号：US20060072182A1
公开(公告)日：2006-04-06
申请号：US11229716
申请日：2005-09-20
申请人： Jae Oh , Byoung Lee , Jae Park , Su Mun
发明人： Jae Oh , Byoung Lee , Jae Park , Su Mun
IPC分类号： G02F1/15
CPC分类号： G02F1/1525 , G02F2001/1519 , Y10S438/929
摘要： Disclosed is an electrolyte for electrochromic devices, which includes a eutectic mixture comprising: (a) a compound having an acidic functional group and basic functional group; and (b) an ionizable lithium salt. An electrochromic device using the same electrolyte is also disclosed. Because the electrochromic device uses the electrolyte comprising the eutectic mixture, which is cost-efficient and has excellent thermal and chemical stability, there are no problems related with evaporation and exhaustion as well as flammability of electrolyte. Additionally, it is possible to minimize side reactions with constitutional elements of an electrochromic device and electrolyte, thereby improving the safety. Further, it is also possible to improve the quality of an electrochromic device by virtue of a broad electrochemical window and high electroconductivity of the eutectic mixture.

9. 发明申请

US20060033457A1 Sensorless motor drive apparatus and method for protecting and controlling the same 有权
公开(公告)号：US20060033457A1
公开(公告)日：2006-02-16
申请号：US11037015
申请日：2005-01-19
申请人： June Won , Jae Oh , Gil Lee , Dal Cheong
发明人： June Won , Jae Oh , Gil Lee , Dal Cheong
IPC分类号： H02P7/06
CPC分类号： H02P29/032 , H02P6/34 , H02P21/18
摘要： A sensorless motor drive apparatus and a method for protecting and controlling the same. The sensorless motor drive apparatus includes a unit for determining the presence or absence of a position estimation error of a rotor contained in a motor using a current value applied to the motor and a position estimation angle of the rotor. Therefore, the sensorless motor drive apparatus determines the presence or absence of the position estimation error of the rotor without using a sensor, so that it reduces production costs, prevents the motor from generating a faulty operation, and prevents a compressor including the motor from being damaged.

10. 发明申请

US20050140890A1 Thin film transistor device, liquid crystal display device using the same, and method of fabricating the same 有权
标题翻译：薄膜晶体管器件，使用其的液晶显示器件及其制造方法
公开(公告)号：US20050140890A1
公开(公告)日：2005-06-30
申请号：US10880121
申请日：2004-06-30
申请人： Jong Kim , Seung Nam , Jae Oh
发明人： Jong Kim , Seung Nam , Jae Oh
IPC分类号： G02F1/136 , G02F1/1333 , G02F1/1343 , G02F1/1368 , H01L21/00 , H01L21/77 , H01L27/12 , H01L29/786
CPC分类号： G02F1/1368 , G02F1/133305 , G02F2001/136231 , H01L27/1214 , H01L27/124
摘要： A liquid crystal display device includes a data line, a source electrode, a drain electrode, and a pixel electrode disposed on a lower substrate, an island-shaped semiconductor layer overlapping the source and drain electrodes, a gate insulating layer along an entire surface of the lower substrate including the semiconductor layer, a gate line and a gate electrode on the gate insulating layer, a passivation layer along an entire surface of the lower substrate including the gate line, an upper substrate facing the lower substrate, and a liquid crystal layer between the lower and upper substrates.
摘要翻译：液晶显示装置包括数据线，源电极，漏电极和设置在下基板上的像素电极，与源极和漏极重叠的岛状半导体层，沿着整个表面的栅绝缘层包括半导体层的下基板，栅绝缘层上的栅极线和栅极电极，沿着包括栅极线的下基板的整个表面的钝化层，面向下基板的上基板和液晶层在下基板和上基板之间。

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