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1. 发明申请

US20050142817A1 Surface planarization method of sequential lateral solidification crystallized poly-silicon thin film 审中-公开
标题翻译：连续横向固化结晶多晶硅薄膜的表面平面化方法
公开(公告)号：US20050142817A1
公开(公告)日：2005-06-30
申请号：US10884954
申请日：2004-07-07
申请人： Choong Sohn , Yong Kim , Jin Lee , Young Ko , Choong Chung , Chi Hwang , Yoon Song
发明人： Choong Sohn , Yong Kim , Jin Lee , Young Ko , Choong Chung , Chi Hwang , Yoon Song
IPC分类号： C30B1/00 , H01L21/20 , H01L21/26 , H01L21/268 , H01L21/324 , H01L21/36 , H01L21/42 , H01L21/477
CPC分类号： H01L21/0268 , H01L21/2026 , H01L21/268
摘要： Provided is a method for planarizing a polysilicon surface grown by means of a sequential lateral solidification method, which comprises the steps of: crystallizing an amorphous silicon having a predetermined thickness formed on a substrate into the polysilicon layer by means of the sequential lateral solidification method; and planarizing the polysilicon layer by means of a laser having an energy density for converting partially melted polysilicon into fully melted polysilicon, so that electrical characteristics of element may be improved when the polysilicon thin film transistor is fabricated using the planarization process.
摘要翻译：提供了一种通过顺序侧向固化方法平坦化生长的多晶硅表面的方法，其包括以下步骤：通过顺序侧向固化方法将形成在衬底上的具有预定厚度的非晶硅结晶成多晶硅层; 并且通过具有用于将部分熔融的多晶硅转化为完全熔化的多晶硅的能量密度的激光来平坦化多晶硅层，使得当使用平坦化工艺制造多晶硅薄膜晶体管时，可以提高元件的电特性。

2. 发明申请

US20050142707A1 Method of crystallizing/activating polysilicon layer and method of fabricating thin film transistor having the same polysilicon layer 有权
标题翻译：多晶硅层的结晶/活化方法和制造具有相同多晶硅层的薄膜晶体管的方法
公开(公告)号：US20050142707A1
公开(公告)日：2005-06-30
申请号：US10909457
申请日：2004-08-03
申请人： Yong Kim , Choong Sohn , Jin Lee
发明人： Yong Kim , Choong Sohn , Jin Lee
IPC分类号： H01L29/786 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/423 , H01L21/00 , H01L21/84
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L21/268 , H01L29/42384 , H01L29/66757
摘要： Provided is a method of crystallizing/activating a polysilicon layer and a method of fabricating a thin film transistor having the same polysilicon layer, in which when a gate material is patterned to form a gate electrode and define source/drain regions, the gate material on source/drain regions partially remains, so that crystallizing and activating processes are performed at the same time.
摘要翻译：提供了一种使多晶硅层结晶/活化的方法和制造具有相同多晶硅层的薄膜晶体管的方法，其中当栅极材料被图案化以形成栅电极并限定源极/漏极区域时，栅极材料在源极/漏极区域部分保留，从而同时进行结晶和激活过程。

3. 发明申请

US20060087599A1 Liquid crystal display device and method of fabricating the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20060087599A1
公开(公告)日：2006-04-27
申请号：US11172481
申请日：2005-06-30
申请人： Choong Sohn
发明人： Choong Sohn
IPC分类号： G02F1/136
CPC分类号： G02F1/13454
摘要： A liquid crystal display device includes a liquid crystal display panel. A drive circuit part is formed in the display panel. The drive circuit has a switching device with thin film transistors. The transistors commonly use one gate electrode and are connected in parallel. The switching device includes a gate electrode, a gate insulating film covering the gate electrode, a semiconductor pattern which overlaps the gate electrode with the gate insulating film therebetween, and source and drain electrodes which are formed on the semiconductor pattern and face each other. The source and drain electrodes, as well as a channel between the source and drain electrodes, are bent in the same direction.
摘要翻译：液晶显示装置包括液晶显示面板。驱动电路部分形成在显示面板中。驱动电路具有薄膜晶体管的开关器件。晶体管通常使用一个栅电极并联连接。开关器件包括栅电极，覆盖栅电极的栅极绝缘膜，与栅电极重叠的栅极绝缘膜的半导体图案以及形成在半导体图案上并彼此面对的源极和漏极。源极和漏极以及源极和漏极之间的沟道沿相同的方向弯曲。

4. 发明申请

US20060258034A1 Thin film transistor, fabrication method thereof, liquid crystal display panel device having the same, and fabrication method thereof 有权
标题翻译：薄膜晶体管，其制造方法，具有该薄膜晶体管的液晶显示面板装置及其制造方法
公开(公告)号：US20060258034A1
公开(公告)日：2006-11-16
申请号：US11259029
申请日：2005-10-27
申请人： Choong Sohn
发明人： Choong Sohn
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L27/124 , H01L29/41733 , H01L29/42384
摘要： A TFT that provides an efficient layout, a fabrication method thereof, an LCD device having the TFT, and a fabrication method thereof are provided. The TFT has a gate electrode and source/drain electrodes with an active layer interposed. The source electrodes and the drain electrodes are alternated in a vertical direction and a horizontal direction. Thus, the same source electrodes and the same drain electrodes are arranged in a diagonal direction. Source lines are connected with the source electrodes arranged in a diagonal direction and drain lines are connected with the drain electrodes arranged in a diagonal direction. Since a channel width is formed between the source electrode and adjacent drain electrodes, the channel width can be maximized within a limited area. Also, the source lines and the drain lines are arranged in a diagonal direction, so that an area use rate is maximized.
摘要翻译：提供一种提供有效布局的TFT，其制造方法，具有TFT的LCD器件及其制造方法。 TFT具有栅电极和插入有源层的源/漏电极。源电极和漏电极在垂直方向和水平方向上交替。因此，相同的源电极和相同的漏极布置在对角线方向。源极线与沿着对角线方向排列的源电极连接，漏极线与排列成对角线方向的漏极连接。由于在源电极和相邻的漏电极之间形成沟道宽度，所以可以在有限的区域内使通道宽度最大化。此外，源极线和漏极线被布置在对角线方向上，使得面积使用率最大化。

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