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    • 1. 发明授权
    • Silicon nitride sintered body with region varying microstructure and
method for manufacture thereof
    • 具有区域变化的微结构的氮化硅烧结体及其制造方法
    • US6136738A
    • 2000-10-24
    • US222241
    • 1998-12-28
    • Yong Kee BaekHyoun-Ee KimWon Ho LeeKi Min LeeSeung Su BaekEul Son Kang
    • Yong Kee BaekHyoun-Ee KimWon Ho LeeKi Min LeeSeung Su BaekEul Son Kang
    • B32B5/14C04B35/48C04B35/584C04B35/593
    • C04B35/5935
    • A silicon nitride sintered body is obtained by mixing 2.about.16 wt % of Yb.sub.2 O.sub.3 as a sintering additive with Si.sub.3 N.sub.4 powders including unavoidable impuirities, pressing the mixed powder into a desired form, and gas-pressure sintering the thusly pressed form, whereby an inner region of the sintered body has a fine microstructure, and an outer region thereof has a mixed microstructure in which elongated grains and fine grains co-exist and a method for manufacturing a silicon nitride sintered body, includes the steps of: adding and mixing 2.about.16 wt % of Yb.sub.2 O.sub.3 powder as a sintering additive into a silicon nitride (Si.sub.3 N.sub.4) powder; ball-milling the mixed powder to obtain a slurry; drying and classifying the slurry; press-forming the resultant powder in a die uniaxially and isostatically; and gas-pressure sintering the resultant compact body at a temperature in the range of 1800.about.2000.degree. C., whereby an inner region of the resultant sintered body has a fine microstructure, and an outer region of the resultant sintered body has a mixed microstructure in which elongated grains and fine grains co-exist.
    • 通过将2重量%的Yb 2 O 3作为烧结添加剂与包含不可避免的渗透性的Si 3 N 4粉末混合,将混合粉末压制成所需的形式,并将这样压制的气体加压烧结,得到氮化硅烧结体, 的烧结体具有精细的微观结构,其外部区域具有细长晶粒和细晶粒共存的混合微观结构和氮化硅烧结体的制造方法,包括以下步骤:添加并混合2 DIFFERENCE 16 重量%的作为烧结添加剂的Yb 2 O 3粉末成为氮化硅(Si 3 N 4)粉末; 对混合粉末进行球磨,得到浆料; 干燥和分级浆料; 将所得粉末在模具中单轴和等静压成型; 在1800℃〜2000℃的温度下对所得的压实体进行气体压力烧结,由此得到的烧结体的内部区域具有微观结构,所得烧结体的外部区域具有混合显微组织 其中细长晶粒和细晶粒共存。
    • 2. 发明授权
    • Method for preparing catalyst for partial oxidation of methylbenzenes
    • 制备甲基苯部分氧化催化剂的方法
    • US07538253B2
    • 2009-05-26
    • US11602324
    • 2006-11-21
    • Won Ho LeeDong Il LeeJong Hyun ChaeHyun Kyung Yoon
    • Won Ho LeeDong Il LeeJong Hyun ChaeHyun Kyung Yoon
    • B01J31/00B01J23/00B01J21/00C07C45/00C07C31/13
    • B01J23/30B01J21/04B01J37/0036B01J37/0221B01J37/0236
    • The present invention relates to a novel method for preparing a catalyst of the formula (1), WOx wherein, W represents tungsten atom, O represents oxygen atom x represents a value determined by oxidative state of W, for partial oxidation of methylbenzenes, the method comprising: (a) a step of preparing tungsten oxide slurry by wet milling; (b) a step of supporting the slurry obtained in the step (a) on fire-resistance inorganic carrier by impregnation; (c) a step of drying the catalyst obtained in the step (b); and (d) a step of calcining the dried catalyst obtained in the step (c), and can reduce the reaction temperature on the basis of equivalent yield in the preparation of corresponding aromatic aldehyde from methylbenzenes since the catalyst has increased the surface areas compared to the conventional one, and thus has high conversion rate.
    • 本发明涉及一种制备式(1)的催化剂的新方法,其中<?in-line-formula description =“In-line Formulas”end =“lead”→> WOx <?in-line-formula description 其中,W表示钨原子,O表示氧原子,x表示由氧化态W确定的值,用于甲基苯的部分氧化,该方法包括:(a) 通过湿磨制备氧化钨浆料的步骤; (b)通过浸渍将在步骤(a)中获得的浆料支撑在耐火无机载体上的步骤; (c)干燥步骤(b)中获得的催化剂的步骤; 和(d)煅烧步骤(c)中获得的干燥催化剂的步骤,并且可以基于由甲基苯制备相应的芳族醛的当量产率来降低反应温度,因为催化剂与表面积相比增加了 因此具有高转换率。
    • 5. 发明授权
    • In-plane switching mode liquid crystal display device
    • 平面切换模式液晶显示装置
    • US08194218B2
    • 2012-06-05
    • US11158477
    • 2005-06-22
    • Won Seok KangWon Ho Lee
    • Won Seok KangWon Ho Lee
    • G02F1/1343
    • G02F1/134363
    • An In-Plane Switching (IPS) mode LCD device is disclosed, to prevent the distortion of transverse electric field in a method of decreasing a line width of a common electrode overlapped with a pixel electrode, which includes intersecting gate and data lines that define a pixel region; thin film transistors at an intersection point of the gate and data lines; pixel electrodes formed in the pixel region and connected with a thin film transistor; and common electrodes arranged between the pixel electrodes of the pixel region; wherein, the outermost common electrode, formed adjacent to the data line, is partially overlapped with the pixel electrode, and the line width of the predetermined portion of the outermost common electrode overlapped with the pixel electrode is smaller than the remaining portions of the outermost common electrode.
    • 公开了一种面内切换(IPS)模式LCD装置,以防止在与像素电极重叠的公共电极的线宽减小的方法中横向电场的变形,该像素电极包括相交的栅极和限定一个 像素区域 在栅极和数据线的交点处的薄膜晶体管; 像素电极,形成于像素区域并与薄膜晶体管连接; 以及布置在像素区域的像素电极之间的公共电极; 其特征在于,与数据线相邻形成的最外侧公共电极与像素电极部分重叠,与该像素电极重叠的最外侧公共电极的规定部分的线宽比最外侧公共电极的剩余部分小 电极。
    • 6. 发明授权
    • In-plane switching mode liquid crystal display device and method for manufacturing the same
    • 面内切换模式液晶显示装置及其制造方法
    • US07502086B2
    • 2009-03-10
    • US11080638
    • 2005-03-16
    • Hyeon Ho SonWon Ho Lee
    • Hyeon Ho SonWon Ho Lee
    • G02F1/1343
    • G02F1/134363G02F1/136213G02F2001/134318G02F2001/134345
    • In an IPS mode LCD device and method, a plurality of sub-blocks are utilized to maintain a maximum transmittance even when a voltage above a predetermined value is applied to the device. The IPS mode LCD device includes a common electrode including a plurality of first segments and a plurality of second segments to define a plurality of blocks, wherein the plurality of first segments are formed substantially parallel to the gate line in the pixel region, and the plurality of second segments are formed substantially parallel to the data line, and connected to the first segments; and a pixel electrode including a plurality of third segments and at least one fourth segment, and being connected with a drain electrode of the thin film transistor, wherein each of the third segments is positioned between the first segments, and the at least one fourth segment connects the third segments.
    • 在IPS模式的LCD装置和方法中,即使当高于预定值的电压被施加到装置时,也使用多个子块来保持最大透射率。 IPS模式LCD装置包括包括多个第一段的公共电极和用于限定多个块的多个第二段,其中多个第一段基本上平行于像素区域中的栅极线形成,并且多个 第二段的形状基本上平行于数据线形成,并连接到第一段; 以及包括多个第三段和至少一个第四段的像素电极,并且与薄膜晶体管的漏电极连接,其中每个第三段位于第一段之间,并且至少一个第四段 连接第三段。