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    • 3. 发明申请
    • APPARATUS AND METHOD FOR TREATING SUBSTRATE
    • 用于处理基板的装置和方法
    • US20120288615A1
    • 2012-11-15
    • US13447831
    • 2012-04-16
    • Kyung Hwa Jung
    • Kyung Hwa Jung
    • C23C14/54
    • C23C16/45572C23C16/4584C23C16/4586C23C16/46C23C16/52
    • Provided are an apparatus and method for depositing a thin film on a substrate. The substrate is supported by a substrate holder. The substrate holder is seated on each of a plurality of holder seating grooves defined in a top surface of the susceptor. An injection hole for injecting a gas is defined in a top surface of each of the holder seating grooves. When a process is performed, the susceptor is rotated with respect to a central axis thereof, and the substrate holder is rotated with respect to a central axis of the substrate holder by the gas injected from the injection hole. A flow rate of the gas supplied onto an under surface of the substrate holder is adjusted according to a state of the substrate.
    • 提供了一种用于在衬底上沉积薄膜的装置和方法。 衬底由衬底保持器支撑。 衬底保持器位于限定在基座的顶表面中的多个保持器座槽中的每一个上。 在每个保持器座槽的顶表面中限定用于注入气体的注入孔。 当进行处理时,基座相对于其中心轴线旋转,并且基板保持器通过从注入孔注入的气体相对于基板保持器的中心轴线旋转。 根据基板的状态来调整供给到基板保持件的下表面的气体的流量。