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    • 1. 发明授权
    • Focal plane shutter having synchronous contact member
    • 焦平面快门具有同步接触构件
    • US06490416B1
    • 2002-12-03
    • US09854974
    • 2001-05-14
    • Yoichi NakanoAkira ItoMiyoshi TanikawaChiaki Nemoto
    • Yoichi NakanoAkira ItoMiyoshi TanikawaChiaki Nemoto
    • G03B970
    • G03B9/70
    • A focal plane shutter for a camera has a synchronous contact member that produces less chattering than conventional synchronous contact members. One end of an opening electromagnet and one end of a closing electromagnet are separately connected to the higher-potential side of a power supply for a CPU in the camera, and the other ends of the electromagnets are grounded. An output circuit has an inverter circuit made up of a transistor and two resistors. A driver voltage for energizing the closing electromagnet is applied to the base of the transistor via a first resistor. The collector of the transistor is connected to the higher-potential side of the power supply via a second resistor. The emitter of the transistor is connected to the lower-potential side of the power supply. First and second voltage signals are produced from an output terminal on the side of the collector. One end of the synchronous contact member is connected to the lower-potential side of the power supply and the other end thereof is connected to the base of the transistor.
    • 用于相机的焦平面快门具有同步接触构件,其产生比常规同步接触构件更少的颤振。 打开电磁体的一端和关闭电磁体的一端分别连接到照相机中用于CPU的电源的较高电位侧,并且电磁体的另一端接地。 输出电路具有由晶体管和两个电阻构成的反相器电路。 用于激励闭合电磁体的驱动电压经由第一电阻器施加到晶体管的基极。 晶体管的集电极通过第二电阻器连接到电源的高电位侧。 晶体管的发射极连接到电源的低电位侧。 从收集器侧的输出端产生第一和第二电压信号。 同步接触构件的一端连接到电源的低电位侧,另一端连接到晶体管的基极。
    • 2. 发明授权
    • Reflection-type optical sensor
    • 反射型光学传感器
    • US06642505B1
    • 2003-11-04
    • US09616389
    • 2000-07-14
    • Yoichi NakanoAkira ItoYasutoshi ChibaHiroshi Takahashi
    • Yoichi NakanoAkira ItoYasutoshi ChibaHiroshi Takahashi
    • H01J4014
    • A47K13/24G01S7/481G01S17/46G01V8/14
    • A reflection-type optical sensor is provided wherein misjudgment is prevented in detecting the existence of an object and determining whether a distance to the object is large or small. A housing is molded from white polycarbonate resin and has a light-projecting portion and a light-receiving portion. A light-projecting lens and a light-emitting device are mounted in a light-projecting chamber formed in the light-projecting portion. A light-receiving lens and a light-receiving device are mounted in a light-receiving chamber formed in the light-receiving portion. Those of the wall surfaces of the light-projecting chamber and the light-receiving chamber which are illuminated with light are light reflection-promoting surfaces that promote the reflection of light. The light reflection-promoting surfaces can be smooth surfaces, surfaces painted in white, inner surfaces of auxiliary members fabricated as separate parts from aluminum, or the like.
    • 提供了一种反射型光学传感器,其中在检测物体的存在并确定到物体的距离是大还是小的情况下防止误判。 壳体由白色聚碳酸酯树脂模制而成,具有光投射部分和光接收部分。 投光透镜和发光装置安装在形成在投光部中的投光室中。 光接收透镜和光接收装置安装在形成在光接收部分中的光接收室中。 被光照射的投光室和光接收室的壁面中的那些是促进光的反射的光反射促进表面。 光反射促进表面可以是光滑的表面,涂在白色的表面,辅助构件的内表面作为与铝分离的部件制造等。
    • 6. 发明授权
    • Method and system for last gasp device detection
    • 最后一个喘气装置检测方法和系统
    • US09088994B2
    • 2015-07-21
    • US13601692
    • 2012-08-31
    • Dorin ViorelAkira Ito
    • Dorin ViorelAkira Ito
    • H04W24/00H04W74/08H04L29/14
    • H04W74/0841H04L69/40
    • A method is provided for device detection by a base station comprising receiving a plurality of signals over a preamble subframe from an endpoint. The plurality of signals are attempting to access an access group of the preamble subframe. Additionally, the plurality of signals are received on a random access channel using a wireless network. Further, the plurality of signals have a plurality of last gasp messages (LGMs). The method additionally comprises determining an allowable rate of collisions for the plurality of signals and determining an actual rate of collisions for the plurality of signals. The method includes increasing the size of the access group allocated to the plurality of signals having the plurality of LGMs, based on whether the actual rate of collisions exceeds the allowable rate of collisions.
    • 提供了一种用于由基站进行设备检测的方法,包括:从端点通过前导码子帧接收多个信号。 多个信号正试图访问前同步码子帧的接入组。 另外,使用无线网络在随机接入信道上接收多个信号。 此外,多个信号具有多个最后的喘气信息(LGM)。 该方法还包括确定多个信号的可允许冲突率并确定多个信号的实际碰撞速率。 该方法包括:基于实际的冲突率是否超过允许的冲突率,增加分配给具有多个LGM的多个信号的接入组的大小。
    • 7. 发明授权
    • Field transistor structure manufactured using gate last process
    • 使用门最后工艺制造的场晶体管结构
    • US08841674B2
    • 2014-09-23
    • US13174083
    • 2011-06-30
    • Chao-Yang LuGuang-Jye ShiauAkira Ito
    • Chao-Yang LuGuang-Jye ShiauAkira Ito
    • H01L29/78H01L21/28
    • H01L29/7839G11C17/16
    • According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions.
    • 根据本发明的实施例,提供了场晶体管结构。 场晶体管结构包括半导体衬底,金属栅极,多晶硅(多晶硅)层以及第一和第二金属部分。 多晶硅层具有第一,第二,第三和第四边,并且设置在第一侧的半导体衬底和第二侧上的金属栅极之间。 多晶硅层也设置在第三和第四侧上的第一和第二金属部分之间。 根据本发明的一些实施例,场晶体管结构还可以包括设置在多晶硅层和半导体衬底之间的薄金属层。 薄金属层可以电连接到第一和第二金属部分中的每一个。
    • 10. 发明授权
    • Low mismatch semiconductor device and method for fabricating same
    • 低失配半导体器件及其制造方法
    • US08610221B2
    • 2013-12-17
    • US12657909
    • 2010-01-29
    • Xiangdong ChenAkira Ito
    • Xiangdong ChenAkira Ito
    • H01L27/088
    • H01L21/28H01L27/092H01L29/78
    • Disclosed is a low mismatch semiconductor device that comprises a lightly doped channel region having a first conductivity type and a first dopant concentration in a semiconductor body, and a high-k metal gate stack including a gate metal layer formed over a high-k gate dielectric without having a dielectric cap on the high-k dielectric. The high-k metal gate stack being formed over the lightly doped channel region. The lightly doped channel region may be a P- or N-conductivity region, for example, and may be part of a corresponding P- or N-semiconductor substrate, or a P- or N-well formed in a substrate of the respectively opposite conductivity type. The disclosed semiconductor device, which may be an NMOS or PMOS analog device, for example, can be fabricated as part of an integrated circuit including one or more CMOS logic devices.
    • 公开了一种低失配半导体器件,其包括在半导体本体中具有第一导电类型和第一掺杂剂浓度的轻掺杂沟道区,以及包括形成在高k栅极电介质上的栅极金属层的高k金属栅堆叠 在高k电介质上没有电介质盖。 高k金属栅堆叠形成在轻掺杂沟道区上。 轻掺杂沟道区可以是例如P型或N-导电性区,并且可以是相应的P-或N-半导体衬底的一部分,也可以是在相对的相对的衬底中形成的P-阱或N阱 导电类型。 所公开的半导体器件(其可以是例如NMOS或PMOS模拟器件)可以被制造为包括一个或多个CMOS逻辑器件的集成电路的一部分。