专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5440206A Plasma processing apparatus comprising means for generating rotating magnetic field 失效
标题翻译：一种等离子体处理装置，包括用于产生旋转磁场的装置
公开(公告)号：US5440206A
公开(公告)日：1995-08-08
申请号：US81023
申请日：1993-06-22
申请人： Yoichi Kurono , Masami Kubota , Hiroyuki Yoshiki , Michio Taniguchi
发明人： Yoichi Kurono , Masami Kubota , Hiroyuki Yoshiki , Michio Taniguchi
IPC分类号： H01J37/32 , H01J7/24
CPC分类号： H01J37/32623 , H01J37/3266
摘要： In a plasma processing s including a processing chamber and plate-parallel electrodes, provided in the processing chamber, for generating a high-frequency electric field in response to a high-frequency voltage, a ring-shaped core is provided in the periphery of the processing chamber, and a toroidal coil includes a plurality of 2n split coils wound in all the periphery of the ring-shaped core so that each pair of split coils oppose to each other. An alternating-current power source for generating a plurality of n-phase alternating-current currents including a plurality of n currents having a phase difference of either .pi./n or 2.pi./n therebetween, is electrically connected with the plurality of split coils of the toroidal coil so that two magnetic fields generated by the each pair of split coils opposing to each other are directed in the same direction in parallel to each other in the processing chamber, and the plurality of currents are respectively flowed into the respective pairs of split coils opposing to each other, thereby generating a rotating magnetic field in parallel to surfaces of the plane-parallel electrodes.
摘要翻译：在包括处理室和平板电极的等离子体处理中，设置在处理室中，用于响应于高频电压产生高频电场，环形芯设置在处理室和环形线圈包括缠绕在环形芯的所有周边中的多个2n个分离线圈，使得每对分裂线圈彼此相对。一种用于产生多个n相交流电流的交流电源，该多个n相交流电流包括多个n电流，其间具有π/ n或2π/ n之间的相位差，并与多个分离线圈环形线圈使得由对置的每对分裂线圈产生的两个磁场在处理室中彼此平行地指向相同的方向，并且多个电流分别流入相应的分离对线圈彼此相对，由此产生与平面平行电极的表面平行的旋转磁场。

2. 发明授权

US5578164A Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US5578164A
公开(公告)日：1996-11-26
申请号：US363270
申请日：1994-12-23
申请人： Yoichi Kurono , Shigeki Tozawa , Shozo Hosoda
发明人： Yoichi Kurono , Shigeki Tozawa , Shozo Hosoda
IPC分类号： H01J37/32 , B44C1/22
CPC分类号： H01J37/32623 , H01J37/32633
摘要： An apparatus for subjecting a semiconductor wafer having an uncovered marginal portion, from which a photoresist film is removed, to an anisotropic etching. The apparatus comprises a process chamber which can be set to a vacuum. Upper and lower electrodes opposite to each other are provided in the process chamber. An etching gas is made into plasma between these electrodes. An electrostatic chuck is arranged on the lower electrode. A wafer is mounted on the electrostatic chuck. A ring made of dielectric material, movable upward and downward, is arranged between the electrodes. A central portion of the ring is formed as a hood having a recessed shape corresponding to the marginal portion of the wafer. During the etching, the hood covers the marginal portion of the wafer under a plasma sheath, so as to be out of contact with the wafer, thereby preventing the marginal portion of the wafer from being etched.
摘要翻译：一种用于对具有未被覆盖的边缘部分的半导体晶片（其中除去光致抗蚀剂膜）进行各向异性蚀刻的设备。该装置包括可设置为真空的处理室。在处理室中设置彼此相对的上下电极。蚀刻气体在这些电极之间被制成等离子体。下电极上设有静电吸盘。将晶片安装在静电卡盘上。由电介质材料制成的可上下移动的环设置在电极之间。环的中心部分形成为具有对应于晶片的边缘部分的凹形的罩。在蚀刻期间，罩覆盖等离子体护套下的晶片的边缘部分，以便与晶片脱离接触，从而防止晶片的边缘部分被蚀刻。

3. 发明申请

US20070218197A1 Vacuum processing system and method of making 审中-公开
标题翻译：真空处理系统及制作方法
公开(公告)号：US20070218197A1
公开(公告)日：2007-09-20
申请号：US11376724
申请日：2006-03-15
申请人： Yoichi Kurono
发明人： Yoichi Kurono
IPC分类号： B05D7/22 , B05D1/36 , C23C16/00
CPC分类号： B22D25/00 , H01J37/32458 , H01J2237/20
摘要： A vacuum processing system configured for etch and deposition applications is described. The vacuum processing chamber comprises a monolithic, metal cast chamber having a substrate support pedestal positioned within the chamber by a plurality of pedestal support arms acting as utility conduits for the support pedestal.
摘要翻译：描述了配置用于蚀刻和沉积应用的真空处理系统。真空处理室包括一个整体的金属铸造室，其具有位于腔室内的基板支撑台座，多个基座支撑臂用作支撑基座的实用导管。

4. 发明授权

US5217560A Vertical type processing apparatus 失效
标题翻译：立式加工设备
公开(公告)号：US5217560A
公开(公告)日：1993-06-08
申请号：US835754
申请日：1992-02-13
申请人： Yoichi Kurono , Shigeru Handa
发明人： Yoichi Kurono , Shigeru Handa
IPC分类号： H01L21/30 , H01J37/32 , H01L21/00 , H01L21/027 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/3244 , H01L21/67069 , H01L21/67109 , H01J2237/3342 , Y10S156/912
摘要： An ashing apparatus of the vertical type comprises a reaction tube erected in the vertical direction to house therein a plurality of semiconductor wafers, an inner tube arranged in the reaction tube to enclose the semiconductor wafers and having a plurality of holes through which activated radicals in plasma can be selectively passed, a reaction gas supply pipe for supplying reaction gases into a space between the reaction tube and the inner tube, and plasma generating electrode unit located outside the reactor tube to generate plasma of the reaction gases only in the space between the reaction tube and the inner tube.
摘要翻译：垂直型的灰化装置包括在垂直方向上竖立的反应管，以容纳多个半导体晶片，内管布置在反应管中以包围半导体晶片并具有多个孔，等离子体中的激活自由基可以选择性地通过用于将反应气体供应到反应管和内管之间的空间的反应气体供应管，以及位于反应器管外部的等离子体产生电极单元，仅在反应器之间的空间中产生反应气体的等离子体管和内管。

5. 发明授权

US06210482B1 Apparatus for feeding gases for use in semiconductor manufacturing 有权
标题翻译：用于供应用于半导体制造的气体的装置
公开(公告)号：US06210482B1
公开(公告)日：2001-04-03
申请号：US09296136
申请日：1999-04-22
申请人： Hirofumi Kitayama , Yoichi Kurono , Nobukazu Ikeda , Naoya Masuda
发明人： Hirofumi Kitayama , Yoichi Kurono , Nobukazu Ikeda , Naoya Masuda
IPC分类号： C23C1600
CPC分类号： H01L21/67017 , C23C16/44 , C23C16/455 , C23C16/45561 , F17D1/04 , G05D7/0641 , Y10T137/0318 , Y10T137/0352 , Y10T137/86389 , Y10T137/87314 , Y10T137/87676 , Y10T137/87692
摘要： An apparatus for feeding gases for use in semiconductor manufacturing reduced in size and manufacturing costs and facilitating maintenance and operation of the gas supply system. The apparatus comprises a plurality of gas supply sources, gas source valves provided on the gas lead-out pipes from the respective gas supply sources, flow rate controllers provided on main gas feed pipes into which the lead-out pipes converge, and gas supply valves provided on the outlet side of the flow rate controllers.
摘要翻译：用于半导体制造中供给气体的装置减小了尺寸和制造成本，并促进了供气系统的维护和运行。该装置包括多个气体供给源，从各个气体供给源设置在气体导出管上的气体源，设置在引出管汇接的主要供气管上的流量控制器，以及气体供给阀设置在流量控制器的出口侧。

6. 发明授权

US5779803A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5779803A
公开(公告)日：1998-07-14
申请号：US696224
申请日：1996-08-13
申请人： Yoichi Kurono , Shigeki Tozawa , Shozo Hosoda
发明人： Yoichi Kurono , Shigeki Tozawa , Shozo Hosoda
IPC分类号： H01J37/32 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/32633
摘要： An apparatus for subjecting a semiconductor wafer having an uncovered marginal portion, from which a photoresist film is removed, to an anisotropic etching. The apparatus comprises a process chamber which can be set to a vacuum. Upper and lower electrodes opposite to each other are provided in the process chamber. An etching gas is made into plasma between these electrodes. An electrostatic chuck is arranged on the lower electrode. A wafer is mounted on the electrostatic chuck. A ring made of dielectric material, movable upward and downward, is arranged between the electrodes. A central portion of the ring is formed as a hood having a recessed shape corresponding to the marginal portion of the wafer. During the etching, the hood covers the marginal portion of the wafer under a plasma sheath, so as to be out of contact with the wafer, thereby preventing the marginal portion of the wafer from being etched.
摘要翻译：一种用于对具有未被覆盖的边缘部分的半导体晶片（其中除去光致抗蚀剂膜）进行各向异性蚀刻的设备。该装置包括可设置为真空的处理室。在处理室中设置彼此相对的上下电极。蚀刻气体在这些电极之间被制成等离子体。下电极上设有静电吸盘。将晶片安装在静电卡盘上。由电介质材料制成的可上下移动的环设置在电极之间。环的中心部分形成为具有对应于晶片的边缘部分的凹形的罩。在蚀刻期间，罩覆盖等离子体护套下的晶片的边缘部分，以便与晶片脱离接触，从而防止晶片的边缘部分被蚀刻。

7. 发明授权

US06558506B1 Etching system and etching chamber 有权
标题翻译：蚀刻系统和蚀刻室
公开(公告)号：US06558506B1
公开(公告)日：2003-05-06
申请号：US09889582
申请日：2001-10-24
申请人： Richard J. Freeman , Jay R. Wallace , Yoichi Kurono , Arthur H. Laflamme, Jr. , Louise Smith Barriss , Tadashi Onishi
发明人： Richard J. Freeman , Jay R. Wallace , Yoichi Kurono , Arthur H. Laflamme, Jr. , Louise Smith Barriss , Tadashi Onishi
IPC分类号： H01L2100
CPC分类号： H01L21/6719 , H01L21/67063 , H01L21/67126 , H01L21/67167 , H01L21/67196
摘要： The present invention provides an etching system having a plurality of etching chambers (16, 18, 20) disposed about a transfer chamber (14), wherein the etching chambers are adapted to be selectively mounted at different positions with respect to the transfer chamber.
摘要翻译：本发明提供了一种蚀刻系统，其具有围绕传送室（14）设置的多个蚀刻室（16,18,20），其中蚀刻室适于选择性地安装在相对于传送室的不同位置处。

8. 发明授权

US06360762B1 Method for feeding gases for use in semiconductor manufacturing 有权
公开(公告)号：US06360762B1
公开(公告)日：2002-03-26
申请号：US09765665
申请日：2001-01-22
申请人： Hirofumi Kitayama , Yoichi Kurono , Nobukazu Ikeda , Naoya Masuda
发明人： Hirofumi Kitayama , Yoichi Kurono , Nobukazu Ikeda , Naoya Masuda
IPC分类号： F16K3102
摘要： An apparatus for feeding gases for use in semiconductor manufacturing reduced in size and manufacturing costs and facilitating maintenance and operation of the gas supply system. The apparatus comprises a plurality of gas supply sources, gas source valves provided on the gas lead-out pipes from the respective gas supply sources, flow rate controllers provided on main gas feed pipes into which the lead-out pipes converge, and gas supply valves provided on the outlet side of the flow rate controllers.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式