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    • 4. 发明授权
    • Fault-tolerant unit and method for through-silicon via
    • 容错单元和穿硅通孔的方法
    • US09177940B2
    • 2015-11-03
    • US13236661
    • 2011-09-20
    • Chiao-Ling LungYu-Shih SuShih-Chieh ChangYiyu Shi
    • Chiao-Ling LungYu-Shih SuShih-Chieh ChangYiyu Shi
    • H03K19/00H01L25/065H01L25/00H01L23/48
    • H01L25/0657H01L23/481H01L2224/16146H01L2225/06544
    • A fault-tolerant unit and a fault-tolerant method for through-silicon via (TSV) are provided. The fault-tolerant unit includes TSV structures TSV1˜TSVn, nodes N11˜N1n, nodes N21˜N2n and a switching module. The TSV structure TSVi is connected between the node N1i of the first chip and the node N2i of the second chip, wherein 1≦i≦n. The switching module is connected between the nodes N21˜N2n of the second chip and a test path of the second chip. In normal operation state, the switching module disconnects the test path and the nodes N21˜N2n when the TSV structures TSV1˜TSVn are valid. The switching module connects the node N2i to at least another one of the nodes N21˜N2n when the TSV structure TSVi is faulty in the normal operation state. In test status, the switching module connects the test path to the nodes N21˜N2n.
    • 提供了一种容错单元和通过硅通孔(TSV)的容错方法。 容错单元包括TSV结构TSV1〜TSVn,节点N11〜N1n,节点N21〜Nn以及交换模块。 TSV结构TSVi连接在第一芯片的节点N1i和第二芯片的节点N2i之间,其中1≦̸ i≦̸ n。 切换模块连接在第二芯片的节点N21〜Nn2和第二芯片的测试路径之间。 在正常工作状态下,当TSV结构TSV1〜TSVn有效时,切换模块断开测试路径和节点N21〜N2。 当TSV结构TSVi在正常操作状态下故障时,切换模块将节点N2i连接到节点N21〜Nnn中的至少另一个。 在测试状态下,交换模块将测试路径连接到节点N21〜N2n。
    • 5. 发明申请
    • FAULT-TOLERANT UNIT AND METHOD FOR THROUGH-SILICON VIA
    • 耐腐蚀单元和通过硅的方法
    • US20120248438A1
    • 2012-10-04
    • US13236661
    • 2011-09-20
    • Chiao-Ling LungYu-Shih SuShih-Chieh ChangYiyu Shi
    • Chiao-Ling LungYu-Shih SuShih-Chieh ChangYiyu Shi
    • H01L23/58H01L21/66
    • H01L25/0657H01L23/481H01L2224/16146H01L2225/06544
    • A fault-tolerant unit and a fault-tolerant method for through-silicon via (TSV) are provided. The fault-tolerant unit includes TSV structures TSV1˜TSVn, nodes N11˜N1n, nodes N21˜N2n and a switching module. The TSV structure TSVi is connected between the node N11 of the first chip and the node N2i of the second chip, wherein 1≦i≦n. The switching module is connected between the nodes N21˜N2n of the second chip and a test path of the second chip. In normal operation state, the switching module disconnects the test path and the nodes N21˜N2n when the TSV structures TSV1˜TSVn are valid. The switching module connects the node N2i to at least another one of the nodes N21˜N2n when the TSV structure TSVi is faulty in the normal operation state. In test status, the switching module connects the test path to the nodes N21˜N2n.
    • 提供了一种容错单元和通过硅通孔(TSV)的容错方法。 容错单元包括TSV结构TSV1〜TSVn,节点N11〜N1n,节点N21〜Nn以及交换模块。 TSV结构TSVi连接在第一芯片的节点N11和第二芯片的节点N2i之间,其中1≦̸ i≦̸ n。 切换模块连接在第二芯片的节点N21〜Nn2和第二芯片的测试路径之间。 在正常工作状态下,当TSV结构TSV1〜TSVn有效时,切换模块断开测试路径和节点N21〜N2。 当TSV结构TSVi在正常操作状态下故障时,切换模块将节点N2i连接到节点N21〜Nnn中的至少另一个。 在测试状态下,交换模块将测试路径连接到节点N21〜N2n。