专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070229168A1 Wideband high frequency chokes 有权
标题翻译：宽带高频扼流圈
公开(公告)号：US20070229168A1
公开(公告)日：2007-10-04
申请号：US11395827
申请日：2006-03-31
申请人： Yin Ma , Jonathan Hacker
发明人： Yin Ma , Jonathan Hacker
IPC分类号： H03F3/04
CPC分类号： H03H7/075
摘要： An n-stage RF choke comprises a series connection of two or more inductors connected in series between a source and a load. The inductor closest to the source has the largest inductance and the inductance closest to the load has the smallest inductance. The inductances of any inductors between the inductor closest to the supply and the inductor closest to the load decrease as a function of distance from the supply. The junctions between the inductors in the series connection are shunted to ground by capacitors connected in series with resistors that provide a matched termination for increasing bandwidth by lowering circuit Q factors and eliminating resonant frequencies. The capacitor closest to the supply has the largest capacitance and the capacitor closest to the load has the smallest capacitance. Any intermediate capacitors decrease in capacitance as a function of distance from the supply. Such an arrangement provides a high impedance that isolates the load from the supply at a wide range of frequencies.
摘要翻译： n级RF扼流圈包括在源极和负载之间串联连接的两个或更多个电感器的串联连接。最靠近源极的电感具有最大的电感，最靠近负载的电感具有最小的电感。最靠近电源的电感器和最靠近负载的电感器之间的任何电感器的电感随着电源距离的减小而减小。串联电感器之间的接点通过与电阻器串联连接的电容器分流到地，这些电阻器通过降低电路Q因数并消除谐振频率来提供匹配的端接以提高带宽。最靠近电源的电容具有最大的电容，最靠近负载的电容具有最小的电容。任何中间电容器都会随着电源距离的减小而减小。这种布置提供了高阻抗，其在宽范围的频率下将负载与电源隔离。

2. 发明申请

US20050122644A1 On-chip esd protection circuit for compound semiconductor heterojunction bipolar transistor rf circuits 有权
标题翻译：用于化合物半导体异质结双极晶体管rf电路的片上esd保护电路
公开(公告)号：US20050122644A1
公开(公告)日：2005-06-09
申请号：US10501651
申请日：2003-01-16
申请人： Yin Ma , Guann-Pyung Li
发明人： Yin Ma , Guann-Pyung Li
IPC分类号： H01L27/02 , H02H9/00
CPC分类号： H01L27/0255 , H01L27/0259
摘要： A low loading capacitance on-chip electrostatic discharge (ESD) protection circuit for compound semiconductor power amplifiers is disclosed, which does not degrade the circuit RF performance. Its principle of operation and simulation results regarding capacitance loading, leakage current, degradation to RF performance are disclosed. The design, loading effect over frequency, robustness over process and temperature variation and application to an RF Power amplifier is presented in detail. The ESD circuit couples an input to ground during ESD surges through a diode string coupled to the input, and a transistor switch or Darlington pair having its gate coupled to and triggered by the diode string. The Darlington pair couples the input to ground when triggered through a low impedance path in parallel to the diode string. A reverse diode also couples ground to the input on reverse surges.
摘要翻译：公开了用于复合半导体功率放大器的低负载电容片上静电放电（ESD）保护电路，其不会降低电路RF性能。公开了其关于电容负载，漏电流，RF性能劣化的操作和仿真结果原理。详细介绍了频率的设计，负载效应，过程的鲁棒性和温度变化以及RF功率放大器的应用。 ESD电路在ESD浪涌期间通过耦合到输入的二极管串耦合输入到地，以及晶体管开关或达林顿对，其栅极耦合到二极管串并由二极管串触发。当通过与二极管串并联的低阻抗路径触发时，达林顿对将输入耦合到地。反向二极管也将接地连接到反向浪涌的输入。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式