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1. 发明授权

US6137662A Magnetoresistive sensor with pinned SAL 失效
标题翻译：具有固定SAL的磁阻传感器
公开(公告)号：US6137662A
公开(公告)日：2000-10-24
申请号：US55730
申请日：1998-04-07
申请人： Yiming Huai , Daniel Nepela , Durga Ravipati , Marcos Lederman
发明人： Yiming Huai , Daniel Nepela , Durga Ravipati , Marcos Lederman
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/096 , G11B5/3903 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive sensor including a magnetoresistive (MR) sensing element, a nonmagnetic layer ("spacer") contacting the magnetoresistive sensing element; a first antiferromagnetic (AFM) layer contacting the nonmagnetic layer such that the nonmagnetic layer is sandwiched between the magnetoresistive sensing element and the antiferromagnetic layer; a ferromagnetic soft adjacent layer (SAL) contacting the antiferromagnetic layer such that the antiferromagnetic layer is sandwiched between the nonmagnetic layer and the soft adjacent layer; and a second antiferromagnetic layer contacting the SAL such that the SAL is sandwiched between the first and second antiferromagnetic layers. The two antiferromagnetic layers provide a stronger pinning effect. In one embodiment of the invention, the magnetoresistive sensing element is an anisotropic magnetoresistive (AMR) sensing element comprising a soft ferromagnetic layer. In another embodiment of the invention, the magnetoresistive sensing element is giant magnetoresistive (GMR) sensing element comprising a plurality of layers. The bias scheme can be non-symmetric, or may be symmetric around the magnetoresistive sensing element. An exchange biased bilayer (AFM/SAL) can have a multilayered structure such as AFM/SAL/AFM/SAL. . . . In this configuration, the SAL layer can be thin, so that a high exchange field with a high resistance can be obtained.
摘要翻译：磁阻传感器包括磁阻（MR）感测元件，与磁阻感测元件接触的非磁性层（“间隔”）; 接触非磁性层的第一反铁磁（AFM）层，使得非磁性层夹在磁阻感测元件和反铁磁层之间; 接触反铁磁层的铁磁软相邻层（SAL），使得反铁磁层夹在非磁性层和软相邻层之间; 和与SAL接触的第二反铁磁层，使得SAL夹在第一和第二反铁磁性层之间。两个反铁磁层提供更强的钉扎效果。在本发明的一个实施例中，磁阻感测元件是包括软铁磁层的各向异性磁阻（AMR）感测元件。在本发明的另一个实施例中，磁阻感测元件是包括多个层的巨磁阻（GMR）感测元件。偏置方案可以是非对称的，或者可以围绕磁阻感测元件对称。交换偏压双层（AFM / SAL）可以具有多层结构，例如AFM / SAL / AFM / SAL。。。。在这种结构中，SAL层可以薄，从而可以获得具有高电阻的高交换场。

2. 发明授权

US5438470A Magnetoresistive structure with contiguous junction hard bias design with low lead resistance 失效
标题翻译：具有连续接合硬偏置设计，具有低引线电阻的磁阻结构
公开(公告)号：US5438470A
公开(公告)日：1995-08-01
申请号：US242457
申请日：1994-05-13
申请人： Durga Ravipati , Yong Shen , William C. Cain
发明人： Durga Ravipati , Yong Shen , William C. Cain
IPC分类号： G11B5/31 , G11B5/39 , G11B5/33
CPC分类号： G11B5/399
摘要： A magnetoresistive read transducer includes a magnetoresistive (MR) layer having end regions spaced by a central active regions. A pair of hard-magnetic layers provide the longitudinal magnetic bias to the magnetoresistive layer. Each of the hard-magnetic layers is disposed in contact with one of the end regions of the magnetoresistive layer. In addition, a pair of electrical leads provide the bias current to the magnetoresistive layer. Each of the electrical leads is also disposed in contact with one of the end regions of the magnetoresistive layer. This arrangement enable the transducer of the present invention with the most optimal design. In essence, electrical current directly passes through the central active region of the magnetoresistive layer via the electrical leads as a low electrical resistance path. Magnetic flux of the longitudinal bias directly passes through the central active region of the magnetoresistive layer with a reduced probability of magnetic discontinuity.
摘要翻译：磁阻读取换能器包括具有由中心有源区间隔的端部区域的磁阻（MR）层。一对硬磁性层向磁阻层提供纵向磁偏置。每个硬磁性层被设置成与磁阻层的一个端部区域接触。此外，一对电引线向磁阻层提供偏置电流。每个电引线也设置成与磁阻层的一个端部区域接触。这种布置使得本发明的换能器具有最佳的设计。本质上，电流作为低电阻通路经由电引线直接通过磁阻层的中心有源区。纵向偏置的磁通直接通过磁阻层的中心有源区，磁性不连续的概率降低。

3. 发明授权

US5232570A Nitrogen-containing materials for wear protection and friction reduction 失效
标题翻译：含氮材料，用于磨损保护和摩擦减少
公开(公告)号：US5232570A
公开(公告)日：1993-08-03
申请号：US723431
申请日：1991-06-28
申请人： William G. Haines , Chongwon Byun , Earl Johns , Quock Ng , Durga Ravipati , Robert M. Raymond , Gary C. Rauch
发明人： William G. Haines , Chongwon Byun , Earl Johns , Quock Ng , Durga Ravipati , Robert M. Raymond , Gary C. Rauch
IPC分类号： C23C14/06 , G11B5/72 , G11B5/84
CPC分类号： G11B5/8408 , C23C14/0658 , G11B5/72
摘要： A hard protective material and method for forming the medium having the formula C.sub.x N.sub.y. The medium may be formed as a protective film on a magnetic recording disk in a sputtering apparatus such as a magnetron apparatus. The amount of nitrogen in the film may be affected by controlling the collisions of the sputtered material between the target and deposition substrate by controlling the bombardment of the substrate by electrons. The films exhibit properties indicative of a textured morphology on a nanoscale which enhances the retention of lubricant overcoats.
摘要翻译：用于形成具有式C x N y的介质的硬保护材料和方法。介质可以在诸如磁控管装置的溅射装置中在磁记录盘上形成为保护膜。通过通过电子控制衬底的轰击来控制溅射材料在靶和沉积衬底之间的碰撞可能影响膜中的氮的量。该膜表现出纳米尺度上的纹理形态的性质，其增强润滑剂外涂层的保留性。

4. 发明授权

US06445536B1 Dielectric stencil-defined write head for MR, GMR, and spin valve high density recording heads 失效
标题翻译：用于MR，GMR和自旋阀高密度记录头的介质模板定义写头
公开(公告)号：US06445536B1
公开(公告)日：2002-09-03
申请号：US09140903
申请日：1998-08-27
申请人： Steven C. Rudy , Hugh C. Hiner , Lien-Chang Wang , Yong Shen , Ut Tran , Yunju Ra , Durga Ravipati
发明人： Steven C. Rudy , Hugh C. Hiner , Lien-Chang Wang , Yong Shen , Ut Tran , Yunju Ra , Durga Ravipati
IPC分类号： G11B533
CPC分类号： G11B5/3163 , G11B5/3109 , G11B5/3116 , G11B5/313 , G11B5/3967
摘要： A thin film head apparatus and method for forming such a thin film head. In one approach, the present invention recites forming a cavity in a dielectric layer. Next, a layer of high magnetic field saturation (HBsat) material is sputter-deposited over the dielectric layer such that the HBsat material is deposited into the cavity formed in the dielectric layer. The cavity in the dielectric layer functions as a mold or “stencil” for the HBsat material. The HBsat material deposited into the cavity is used to form the first core of a thin film head. After the formation of the first core of the thin film head, a gap layer of material is deposited above the dielectric layer and above the first core. Next, a layer of HBsat material is sputter-deposited above the gap layer of material and above the first core of the thin film head. The layer of HBsat material disposed above the gap layer of material and above the first core is used to form the second core of the thin film head. Hence, this invention forms first and second cores of a thin film head using sputter deposition processes. As a result, selected HBsat materials which were not well suited to conventional thin film head formation methods can now be used to form the cores of thin film head structures.
摘要翻译：一种用于形成这种薄膜头的薄膜头装置和方法。在一种方法中，本发明阐述了在电介质层中形成空腔。接下来，将一层高磁场饱和（HBsat）材料溅射沉积在电介质层上，使得HBsat材料沉积到形成在电介质层中的空腔中。电介质层中的空腔用作HBsat材料的模具或“模板”。沉积到腔中的HBsat材料用于形成薄膜头的第一芯。在形成薄膜头的第一芯之后，材料的间隙层沉积在介电层上方并在第一芯上方。接下来，将一层HBsat材料溅射沉积在材料的间隙层的上方并位于薄膜头的第一芯上方。设置在材料的间隙层之上和第一芯之上的HBsat材料层用于形成薄膜头的第二芯。因此，本发明使用溅射沉积工艺形成薄膜头的第一和第二芯。结果，现在可以使用非常适合于常规薄膜头形成方法的所选HBsat材料来形成薄膜头结构的芯。

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