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1. 发明授权

US06797456B1 Dual-layer deep ultraviolet photoresist process and structure 有权
标题翻译：双层深紫外光致抗蚀剂工艺及结构
公开(公告)号：US06797456B1
公开(公告)日：2004-09-28
申请号：US10211493
申请日：2002-08-01
申请人： Yiming Gu , John L. Sturtevant , Anging Zhang
发明人： Yiming Gu , John L. Sturtevant , Anging Zhang
IPC分类号： G03F700
CPC分类号： H01L21/76838 , G03F7/0392 , G03F7/095 , H01L21/0274 , H01L21/0276
摘要： A method for forming a photoresist structure that does not have swelling defects. A layer of low activation energy deep ultraviolet photoresist is disposed over a layer that is to be patterned. A layer of high activation energy deep ultraviolet photoresist is then deposited such that the layer of high activation energy photoresist directly overlies the layer of low activation energy photoresist. The two photoresist layers are then processed by performing exposure, post-exposure bake, and development steps to form a photoresist structure. An etch step is then performed so as to form a patterned layer that does not have swelling defects.
摘要翻译：一种形成不具有溶胀缺陷的光刻胶结构的方法。一层低活化能深紫外光致抗蚀剂设置在待图案化的层上。然后沉积一层高活化能深紫外光致抗蚀剂，使得高活化能光致抗蚀剂层直接覆盖低活化能光致抗蚀剂层。然后通过进行曝光，曝光后烘烤和显影步骤来处理两个光致抗蚀剂层以形成光致抗蚀剂结构。然后进行蚀刻步骤以形成不具有溶胀缺陷的图案层。

2. 发明授权

US06733936B1 Method for generating a swing curve and photoresist feature formed using swing curve 有权
标题翻译：使用摆动曲线形成摆动曲线和光刻胶特征的方法
公开(公告)号：US06733936B1
公开(公告)日：2004-05-11
申请号：US10247877
申请日：2002-09-19
申请人： Yiming Gu , John L. Sturtevant
发明人： Yiming Gu , John L. Sturtevant
IPC分类号： G03C500
CPC分类号： G03F7/168 , G03F7/30 , G03F7/3028
摘要： A method for generating a swing curve and a photoresist feature formed using the swing curve. A layer of photoresist is formed that has varying thickness. The thickness of the layer of photoresist is determined at a plurality of points. The semiconductor wafer is then exposed and developed to form a photoresist structure that includes features. For each of the points at which thickness was determined, the size of a corresponding feature is determined. A curve is then determined that correlates the thickness measurements and the size measurements. The resulting swing curve is then used to determine a thickness for photoresist deposition and a photoresist layer is deposited, exposed, and developed to obtain a photoresist feature having the desired size.
摘要翻译：使用摆动曲线形成摆动曲线和光致抗蚀剂特征的方法。形成具有不同厚度的光致抗蚀剂层。在多个点处确定光致抗蚀剂层的厚度。然后将半导体晶片曝光和显影以形成包括特征的光致抗蚀剂结构。对于确定厚度的每个点，确定相应特征的尺寸。然后确定将厚度测量和尺寸测量相关联的曲线。然后将所得的摆动曲线用于确定光致抗蚀剂沉积的厚度，并且沉积，曝光和显影光致抗蚀剂层以获得具有所需尺寸的光致抗蚀剂特征。

3. 发明授权

US07349752B1 Dynamically coupled metrology and lithography 有权
标题翻译：动态耦合测量和光刻
公开(公告)号：US07349752B1
公开(公告)日：2008-03-25
申请号：US10773665
申请日：2004-02-06
申请人： John L. Sturtevant , Yiming Gu
发明人： John L. Sturtevant , Yiming Gu
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , G03F7/70625 , G03F7/70633 , H01L22/12
摘要： Methods for determining tolerances are disclosed that can be used for determining whether a lot of semiconductor wafers needs to be reworked. Overlay tolerance, critical dimension tolerance and a dynamic line edge placement tolerance are determined using error measurements that are taken from sample wafers in the lot, giving tolerances that reflect the error state of that particular lot of semiconductor wafers.
摘要翻译：公开了用于确定公差的方法，其可用于确定是否需要重新制造大量半导体晶片。使用从批次中的样品晶片获取的误差测量来确定覆盖公差，临界尺寸公差和动态线边缘放置公差，给出反映该特定批次的半导体晶片的误差状态的公差。

4. 发明授权

US06913872B1 Dual-wavelength exposure for reduction of implant shadowing 有权
标题翻译：用于减少植入物阴影的双波长曝光
公开(公告)号：US06913872B1
公开(公告)日：2005-07-05
申请号：US10262301
申请日：2002-09-30
申请人： John L. Sturtevant , Yiming Gu , Dyiann Chou , Chantha Lom
发明人： John L. Sturtevant , Yiming Gu , Dyiann Chou , Chantha Lom
IPC分类号： G03F7/20 , G03F7/40 , H01L21/265
CPC分类号： G03F7/70425 , G03F7/203 , G03F7/40 , G03F7/405 , G03F7/70466 , H01L21/26586
摘要： A method for generating a photoresist structure is disclosed in which a layer of photoresist is deposited over a semiconductor substrate. In a first exposure, the layer of photoresist is exposed to deep ultraviolet light. A second exposure is then performed using a different wavelength of light to pattern the layer of photoresist. The photoresist is then developed so as to form a photoresist structure having reduced thickness and rounded corners. This gives a photoresist structure having a reduced shadow area. An angled ion implant can then be performed using the photoresist structure as a mask.
摘要翻译：公开了一种用于产生光致抗蚀剂结构的方法，其中在半导体衬底上沉积光致抗蚀剂层。在第一曝光中，光致抗蚀剂层暴露于深紫外光。然后使用不同波长的光进行第二曝光以对光致抗蚀剂层进行图案化。然后显影光致抗蚀剂以形成具有减小的厚度和圆角的光致抗蚀剂结构。这给出了具有减小的阴影区域的光致抗蚀剂结构。然后可以使用光致抗蚀剂结构作为掩模来执行成角度的离子注入。

5. 发明申请

US20110202898A1 Contour Alignment For Model Calibration 有权
标题翻译：轮廓对准模型校准
公开(公告)号：US20110202898A1
公开(公告)日：2011-08-18
申请号：US13092440
申请日：2011-04-22
申请人： IR KUSNADI , Thuy Q. Do , Yuri Granik , John L. Sturtevant
发明人： IR KUSNADI , Thuy Q. Do , Yuri Granik , John L. Sturtevant
IPC分类号： G06F9/455
CPC分类号： G03F7/70441 , G03F7/705 , G03F7/70516
摘要： Techniques for model calibration and alignment of measurement contours of printed layout features with simulation contours obtained with a model are disclosed. With various implementations of the invention, contour point errors are determined. Based on the contour point errors and a cost function, values of alignment parameters may be determined. The values of alignment parameters may be used to realign the measurement contours for model calibration. The alignment may be conducted concurrently with model calibration.
摘要翻译：公开了用模型校准和印刷布局特征的测量轮廓与模型获得的仿真轮廓对准的技术。通过本发明的各种实现，确定轮廓点误差。基于轮廓点误差和成本函数，可以确定对准参数的值。对准参数的值可用于重新对准用于模型校准的测量轮廓。对准可以与模型校准同时进行。

6. 发明申请

US20110202893A1 Contour Self-Alignment For Optical Proximity Correction Model Calibration 审中-公开
标题翻译：轮廓自对准光学接近校正模型校准
公开(公告)号：US20110202893A1
公开(公告)日：2011-08-18
申请号：US13029113
申请日：2011-02-16
申请人： Ir Kusnadi , Thuy Do , Yuri Granik , John L. Sturtevant
发明人： Ir Kusnadi , Thuy Do , Yuri Granik , John L. Sturtevant
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/70
摘要： Techniques for model calibration and alignment of measurement contours of printed layout features with simulation contours obtained with a model are disclosed. With various implementations of the invention, contour point errors are determined. Based on the contour point errors and a cost function, values of alignment parameters may be determined. The values of alignment parameters may be used to realign the measurement contours for model calibration. The alignment may be conducted concurrently with model calibration.
摘要翻译：公开了用模型校准和印刷布局特征的测量轮廓与模型获得的仿真轮廓对准的技术。通过本发明的各种实现，确定轮廓点误差。基于轮廓点误差和成本函数，可以确定对准参数的值。对准参数的值可用于重新对准用于模型校准的测量轮廓。对准可以与模型校准同时进行。

7. 发明授权

US5516608A Method for controlling a line dimension arising in photolithographic processes 失效
标题翻译：用于控制光刻工艺中出现的线尺寸的方法
公开(公告)号：US5516608A
公开(公告)日：1996-05-14
申请号：US203212
申请日：1994-02-28
申请人： Philip C. D. Hobbs , Steven Holmes , Robert Jackson , Jerry C. Shaw , John L. Sturtevant , Theodore G. van Kessel
发明人： Philip C. D. Hobbs , Steven Holmes , Robert Jackson , Jerry C. Shaw , John L. Sturtevant , Theodore G. van Kessel
IPC分类号： G03F7/20 , H01L21/027 , G03C5/00 , G01B9/02 , G01B11/02
CPC分类号： G03F7/70558 , G03F7/70675
摘要： In a photolithographic process utilizing a wafer coated with a chemically amplified photoresist, a method for controlling a line dimension. The method comprises the steps of measuring at at least two times, and from at least two angles, evolving signals comprising intensities of light diffracted from a portion of an exposed patterned area on the waver, the evolving signals corresponding to vector combinations of time dependent light diffracted from the pattern appearing in the photoresist; and substantially time invariant light diffracted due to any underlying pattern beneath the photoresist; and, combining the measurements mathematically for extracting a contribution due to the pattern evolving in the photoresist.
摘要翻译：在利用涂覆有化学放大光致抗蚀剂的晶片的光刻工艺中，用于控制线尺寸的方法。该方法包括以下步骤：至少测量两次，并且从至少两个角度测量包括从所述摇摆器上的暴露图案化区域的一部分衍射的光的强度的演变信号，所述演变信号对应于时间相关光的矢量组合从出现在光致抗蚀剂中的图案衍射; 并且基本上时间不变的光由于光致抗蚀剂下方的任何底层图案衍射; 并且在数学上组合用于提取由于在光致抗蚀剂中演变的图案的贡献的测量。

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