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1. 发明授权

US08742403B2 Xanthene based semiconductor compositions 有权
标题翻译：基于Xanthene的半导体组合物
公开(公告)号：US08742403B2
公开(公告)日：2014-06-03
申请号：US13043206
申请日：2011-03-08
申请人： Anthony J. Wigglesworth , Yiliang Wu , Ping Liu , Nan-Xing Hu
发明人： Anthony J. Wigglesworth , Yiliang Wu , Ping Liu , Nan-Xing Hu
IPC分类号： H01L51/30 , H01B1/12 , C07D311/78
CPC分类号： C07D493/06 , C07D495/22 , C08K5/1545 , C08K5/45 , H01L51/0068 , H01L51/0071 , H01L51/0541 , H01L51/0545 , Y02E10/549 , Y02P70/521 , C08L25/04
摘要： A small molecule semiconductor of Formula (I): wherein R1, R2, R3 and R4 are independently selected from a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted ethynyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, an alkoxy group, an alkylthio group, an alkylsilyl group, a cyano group, and a halogen atom, wherein n is 1 or 2, and wherein X is independently S or
摘要翻译：式（I）的小分子半导体：其中R1，R2，R3和R4独立地选自氢原子，取代或未取代的烷基，取代或未取代的烯基，取代或未取代的乙炔基，取代或未取代的乙炔基，未取代的芳基，取代或未取代的杂芳基，烷氧基，烷硫基，烷基甲硅烷基，氰基和卤素原子，其中n为1或2，并且其中X独立地为S或

2. 发明授权

US08963131B2 Electronic device 有权
标题翻译：电子设备
公开(公告)号：US08963131B2
公开(公告)日：2015-02-24
申请号：US13158584
申请日：2011-06-13
申请人： Yiliang Wu , Anthony J. Wigglesworth , Ping Liu , Nan-Xing Hu
发明人： Yiliang Wu , Anthony J. Wigglesworth , Ping Liu , Nan-Xing Hu
IPC分类号： H01L29/08 , H01L29/04 , H01L51/05 , H01L51/00
CPC分类号： H01L51/0074 , H01L51/0012 , H01L51/0035 , H01L51/0073 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The semiconducting layer has been deposited on an alignment layer that has been aligned in the direction between the source and drain electrodes. The resulting device has increased charge carrier mobility.
摘要翻译：诸如薄膜晶体管的电子器件包括由半导体组合物形成的半导体层。半导体组合物包含聚合物粘合剂和小分子半导体。半导体层已经沉积在已经在源极和漏极之间的方向上排列的取向层上。所得到的器件具有增加的电荷载流子迁移率。

3. 发明授权

US08945425B2 Semiconductor composition 有权
标题翻译：半导体组成
公开(公告)号：US08945425B2
公开(公告)日：2015-02-03
申请号：US13088476
申请日：2011-04-18
申请人： Yiliang Wu , Sandra J. Gardner , Anthony J. Wigglesworth , Ping Liu , Nan-Xing Hu
发明人： Yiliang Wu , Sandra J. Gardner , Anthony J. Wigglesworth , Ping Liu , Nan-Xing Hu
IPC分类号： H01B1/00 , H01L29/08 , H01L51/00 , C07D495/04 , H01L51/05
CPC分类号： H01L51/0074 , C07D495/04 , H01B1/12 , H01L51/0558
摘要： An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor. The small molecule semiconductor in the semiconducting layer has a crystallite size of less than 100 nanometers. Devices formed from the composition exhibit high mobility and excellent stability.
摘要翻译：诸如薄膜晶体管的电子器件包括由半导体组合物形成的半导体层。半导体组合物包含聚合物粘合剂和小分子半导体。半导体层中的小分子半导体的微晶尺寸小于100纳米。由该组合物形成的装置显示出高移动性和优异的稳定性。

4. 发明申请

US20110178255A1 BENZODITHIOPHENE BASED MATERIALS COMPOSITIONS 有权
标题翻译：基于二苯并噻吩的材料组合物
公开(公告)号：US20110178255A1
公开(公告)日：2011-07-21
申请号：US12689613
申请日：2010-01-19
申请人： Anthony J. Wigglesworth , Yiliang Wu , Ping Liu , Nan-Xing Hu
发明人： Anthony J. Wigglesworth , Yiliang Wu , Ping Liu , Nan-Xing Hu
IPC分类号： C08F228/06 , C08F28/06 , C08F2/00
CPC分类号： H01L51/0036 , C08G61/123 , C08G61/126 , C08G2261/3243 , C08G2261/3246 , C08G2261/411 , C08G2261/91 , H01L51/0545 , Y02E10/549
摘要： A polymer semiconductor that includes a polythiophene having an Mn from about 1,000 to about 400,000 Daltons and derived from benzodithiophene monomer segments of Formula (1) and at least one divalent linkage providing compound selected from the group consisting of an aromatic or heteroaromatic electron acceptor compound X and an aromatic or heteroaromatic compound Y, wherein R1 and R2 are side chains independently selected from the group consisting of a hydrogen atom, a hydrocarbon group, a heteroatom and combinations thereof.
摘要翻译：一种聚合物半导体，其包含具有约1,000至约400,000道尔顿的Mn并衍生自式（1）的苯并二噻吩单体链段的聚噻吩和至少一种二价键连接提供化合物，所述化合物选自芳族或杂芳族电子受体化合物X 和芳族或杂芳族化合物Y，其中R 1和R 2是独立地选自氢原子，烃基，杂原子及其组合的侧链。

5. 发明授权

US08057849B2 Ultra low melt metal nanoparticle composition for thick-film applications 有权
标题翻译：用于厚膜应用的超低熔融金属纳米颗粒组合物
公开(公告)号：US08057849B2
公开(公告)日：2011-11-15
申请号：US12631153
申请日：2009-12-04
申请人： Ping Liu , Yiliang Wu , Anthony J. Wigglesworth , Nan-Xing Hu
发明人： Ping Liu , Yiliang Wu , Anthony J. Wigglesworth , Nan-Xing Hu
IPC分类号： B05D5/12
CPC分类号： H01B1/22 , B22F1/0022 , B22F1/0074 , B82Y30/00 , H05K1/095 , H05K1/097 , H05K2201/0224 , H05K2203/122
摘要： A method of forming conductive features on a substrate, the method includes reacting a metal compound with a reducing agent in the presence of a stabilizer in a reaction mixture comprising the metal compound, the reducing agent, and the stabilizer, wherein the reaction mixture is substantially free of solvent, to form a plurality of metal nanoparticles with molecules of the stabilizer on the surface of the metal nanoparticles. After isolating the plurality of metal nanoparticles, a liquid composition that includes a polymeric binder, a liquid and the plurality of metal nanoparticles with molecules of the stabilizer on the surface of the metal nanoparticles is deposited on a substrate by a liquid deposition technique to form a deposited composition. The deposited composition is then heated to form conductive features on the substrate.
摘要翻译：一种在基材上形成导电特征的方法，所述方法包括使金属化合物与还原剂在稳定剂存在下在包含金属化合物，还原剂和稳定剂的反应混合物中反应，其中反应混合物基本上不含溶剂，在金属纳米颗粒的表面上形成多个具有稳定剂分子的金属纳米颗粒。在分离多个金属纳米颗粒之后，通过液体沉积技术将包含聚合物粘合剂，液体和金属纳米颗粒表面上的稳定剂分子的多种金属纳米颗粒的液体组合物通过液体沉积技术沉积在基底上，形成沉积组成。然后将沉积的组合物加热以在基底上形成导电特征。

6. 发明申请

US20120228584A1 XANTHENE BASED SEMICONDUCTOR COMPOSITIONS 有权
标题翻译：基于XANTHENE的半导体组成
公开(公告)号：US20120228584A1
公开(公告)日：2012-09-13
申请号：US13043206
申请日：2011-03-08
申请人： Anthony J. Wigglesworth , Yiliang Wu , Ping Liu , Nan-Xing Hu
发明人： Anthony J. Wigglesworth , Yiliang Wu , Ping Liu , Nan-Xing Hu
IPC分类号： H01L51/30 , H01B1/12 , C07D311/78
CPC分类号： C07D493/06 , C07D495/22 , C08K5/1545 , C08K5/45 , H01L51/0068 , H01L51/0071 , H01L51/0541 , H01L51/0545 , Y02E10/549 , Y02P70/521 , C08L25/04
摘要： A small molecule semiconductor of Formula (I): wherein R1, R2, R3 and R4 are independently selected from a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted ethynyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, an alkoxy group, an alkylthio group, an alkylsilyl group, a cyano group, and a halogen atom, wherein n is 1 or 2, and wherein X is independently S or
摘要翻译：式（I）的小分子半导体：其中R1，R2，R3和R4独立地选自氢原子，取代或未取代的烷基，取代或未取代的烯基，取代或未取代的乙炔基，取代或未取代的乙炔基，未取代的芳基，取代或未取代的杂芳基，烷氧基，烷硫基，烷基甲硅烷基，氰基和卤素原子，其中n为1或2，并且其中X独立地为S或

7. 发明授权

US08304512B2 Benzodithiophene based materials compositions 有权
标题翻译：苯并噻吩基材料组成
公开(公告)号：US08304512B2
公开(公告)日：2012-11-06
申请号：US12689613
申请日：2010-01-19
申请人： Anthony J. Wigglesworth , Yiliang Wu , Ping Liu , Nan-Xing Hu
发明人： Anthony J. Wigglesworth , Yiliang Wu , Ping Liu , Nan-Xing Hu
IPC分类号： C08G75/00
CPC分类号： H01L51/0036 , C08G61/123 , C08G61/126 , C08G2261/3243 , C08G2261/3246 , C08G2261/411 , C08G2261/91 , H01L51/0545 , Y02E10/549
摘要： A polymer semiconductor that includes a polythiophene having an Mn from about 1,000 to about 400,000 Daltons and derived from benzodithiophene monomer segments of Formula (1) and at least one divalent linkage providing compound selected from the group consisting of an aromatic or heteroaromatic electron acceptor compound X and an aromatic or heteroaromatic compound Y, wherein R1 and R2 are side chains independently selected from the group consisting of a hydrogen atom, a hydrocarbon group, a heteroatom and combinations thereof.
摘要翻译：一种聚合物半导体，其包含具有约1,000至约400,000道尔顿的Mn并衍生自式（1）的苯并二噻吩单体链段的聚噻吩和至少一种二价键连接提供化合物，所述化合物选自芳族或杂芳族电子受体化合物X 和芳族或杂芳族化合物Y，其中R 1和R 2是独立地选自氢原子，烃基，杂原子及其组合的侧链。

8. 发明授权

US08940197B2 Processes for producing palladium nanoparticle inks 有权
标题翻译：制备钯纳米颗粒油墨的方法
公开(公告)号：US08940197B2
公开(公告)日：2015-01-27
申请号：US13404128
申请日：2012-02-24
申请人： Ping Liu , Yiliang Wu , Nan-Xing Hu , Anthony James Wigglesworth
发明人： Ping Liu , Yiliang Wu , Nan-Xing Hu , Anthony James Wigglesworth
IPC分类号： H01B1/02 , H01B1/22
CPC分类号： H01B1/22 , C09D11/52 , H01B1/02 , H05K1/097 , H05K1/16 , H05K2201/10166
摘要： A process for preparing a palladium nanoparticle ink comprises reacting a reaction mixture comprising a palladium salt, a stabilizer, a reducing agent, and an optional solvent to directly form the palladium nanoparticle ink. During the formation of the palladium nanoparticle ink, the palladium nanoparticles are not isolated from the reaction mixture.
摘要翻译：制备钯纳米颗粒油墨的方法包括使包含钯盐，稳定剂，还原剂和任选溶剂的反应混合物反应直接形成钯纳米颗粒油墨。在钯纳米颗粒油墨的形成期间，钯纳米颗粒不从反应混合物中分离。

9. 发明授权

US08821962B2 Method of forming dielectric layer with a dielectric composition 有权
标题翻译：用电介质组合物形成电介质层的方法
公开(公告)号：US08821962B2
公开(公告)日：2014-09-02
申请号：US12957461
申请日：2010-12-01
申请人： Yiliang Wu , Yulin Wang , Ping Liu , Nan-Xing Hu , Anthony James Wigglesworth
发明人： Yiliang Wu , Yulin Wang , Ping Liu , Nan-Xing Hu , Anthony James Wigglesworth
IPC分类号： B05D5/12 , B05D3/02 , H01L51/05 , H01L51/00
CPC分类号： H01L51/052 , H01L51/0036 , H01L51/0097 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition comprises a dielectric material and a low surface tension additive. The low surface tension additive allows for the formation of a thin, smooth dielectric layer with fewer pinholes and enhanced device yield. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases.
摘要翻译：诸如薄膜晶体管的电子器件包括由电介质组合物形成的衬底和电介质层。电介质组合物包括介电材料和低表面张力添加剂。低表面张力添加剂允许形成具有更少针孔和增强的器件产量的薄的平滑介电层。在特定实施例中，介电材料包括较低介电常数材料和较高介电常数材料。当沉积时，较低k电介质材料和较高介电材料形成分离相。

10. 发明授权

US08643001B2 Semiconductor composition 有权
标题翻译：半导体组成
公开(公告)号：US08643001B2
公开(公告)日：2014-02-04
申请号：US12977464
申请日：2010-12-23
申请人： Yiliang Wu , Anthony James Wigglesworth , Ping Liu , Nan-Xing Hu
发明人： Yiliang Wu , Anthony James Wigglesworth , Ping Liu , Nan-Xing Hu
IPC分类号： H01L51/30
CPC分类号： C07D495/04 , H01L51/0074 , H01L51/0541 , H01L51/0545
摘要： An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor of Formula (I): wherein R1, m, n, a, b, c, and X are as described herein. Devices formed from the composition exhibit high mobility and excellent stability.
摘要翻译：诸如薄膜晶体管的电子器件包括由半导体组合物形成的半导体层。半导体组合物包含聚合物粘合剂和式（I）的小分子半导体：其中R 1，m，n，a，b，c和X如本文所述。由该组合物形成的装置显示出高移动性和优异的稳定性。

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