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1. 发明申请

US20130330911A1 METHOD OF SEMICONDUCTOR FILM STABILIZATION 审中-公开
标题翻译：半导体膜稳定方法
公开(公告)号：US20130330911A1
公开(公告)日：2013-12-12
申请号：US13796061
申请日：2013-03-12
申请人： Yi-Chiau HUANG , Yihwan KIM , Errol Antonio C. SANCHEZ
发明人： Yi-Chiau HUANG , Yihwan KIM , Errol Antonio C. SANCHEZ
IPC分类号： H01L21/02
CPC分类号： H01L21/02535 , C30B25/02 , C30B29/52 , C30B31/06 , C30B33/02 , C30B33/12 , H01L21/02532 , H01L21/0262 , H01L21/02664 , H01L29/7848
摘要： Embodiments of the invention generally relate to methods for forming silicon-germanium-tin alloy epitaxial layers, germanium-tin alloy epitaxial layers, and germanium epitaxial layers that may be doped with boron, phosphorus, arsenic, or other n-type or p-type dopants. The methods generally include positioning a substrate in a processing chamber. A germanium precursor gas is then introduced into the chamber concurrently with a stressor precursor gas, such as a tin precursor gas, to form an epitaxial layer. The flow of the germanium gas is then halted, and an etchant gas is introduced into the chamber. An etch back is then performed while in the presence of the stressor precursor gas used in the formation of the epitaxial film. The flow of the etchant gas is then stopped, and the cycle may then be repeated. In addition to or as an alternative to the etch back process, an annealing processing may be performed.
摘要翻译：本发明的实施方案一般涉及用于形成硅 - 锗 - 锡合金外延层，锗 - 锡合金外延层和可以掺杂有硼，磷，砷或其它n型或p型的锗外延层的锗外延层的方法掺杂剂所述方法通常包括将基底定位在处理室中。然后将锗前体气体与诸如锡前体气体的应激源前体气体同时引入室中，以形成外延层。然后停止锗气体的流动，并且将蚀刻剂气体引入室中。然后在存在用于形成外延膜的应力源前体气体的同时进行回蚀。然后停止蚀刻剂气体的流动，然后可以重复该循环。除了或作为回蚀刻工艺的替代方案，可以进行退火处理。

2. 发明申请

US20100120235A1 METHODS FOR FORMING SILICON GERMANIUM LAYERS 审中-公开
标题翻译：形成硅锗层的方法
公开(公告)号：US20100120235A1
公开(公告)日：2010-05-13
申请号：US12270630
申请日：2008-11-13
申请人： Yi-Chiau HUANG , Masato ISHII , Errol SANCHEZ
发明人： Yi-Chiau HUANG , Masato ISHII , Errol SANCHEZ
IPC分类号： H01L31/20 , G06F19/00
CPC分类号： H01L21/02532 , C23C16/0272 , C23C16/22 , H01L21/02381 , H01L21/0245 , H01L21/0262
摘要： Embodiments of methods for depositing silicon germanium (SiGe) layers on a substrate are disclosed herein. In some embodiments, the method includes depositing a silicon germanium seed layer atop the substrate using a first precursor comprising silicon and chlorine; and depositing a silicon germanium bulk layer atop the silicon germanium seed layer using a second precursor comprising silicon and hydrogen. In some embodiments, the first silicon precursor gas may comprise at least one of dichlorosilane (H2SiCl2), trichlorosilane (HSiCl3), or silicon tetrachloride (SiCl4). In some embodiments, the second silicon precursor gas may comprise at least one of silane (SiH4), or disilane (Si2H6).
摘要翻译：本文公开了在衬底上沉积硅锗（SiGe）层的方法的实施例。在一些实施方案中，该方法包括使用包含硅和氯的第一前体沉积衬底顶部的硅锗种子层; 以及使用包含硅和氢的第二前体在硅锗籽晶层顶上沉积硅锗体层。在一些实施方案中，第一硅前体气体可以包含二氯硅烷（H 2 SiCl 2），三氯硅烷（HSiCl 3）或四氯化硅（SiCl 4）中的至少一种。在一些实施例中，第二硅前体气体可以包括硅烷（SiH 4）或乙硅烷（Si 2 H 6）中的至少一种。

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