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    • 10. 发明授权
    • Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof
    • 超异质外延半导体材料的混合带隙工程及其产品
    • US08226767B2
    • 2012-07-24
    • US12254134
    • 2008-10-20
    • Yeonjoon ParkSang H. ChoiGlen C. KingJames R. Elliott
    • Yeonjoon ParkSang H. ChoiGlen C. KingJames R. Elliott
    • C30B25/18
    • G01N23/207
    • “Super-hetero-epitaxial” combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a “Tri-Unity” system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.
    • “超异质外延”组合包括在具有不同晶体结构的不同材料上的一种材料的外延生长。 可以使用“Tri-Unity”系统来识别兼容的晶体结构。 基于根据晶格匹配方程确定构成材料的混合晶格常数,为每种组合提供了新的带隙工程图。 对于先前测试的材料,使用已知的带隙图,可以通过参考图和晶格匹配方程来形成具有匹配所需衬底并具有期望带隙特性的晶格常数的新材料。 在一个实施例中,该分析使得可以配制新的超异质外延半导体系统,例如基于c面LaF 3上的基于IV族合金的系统; Ⅳ族合金在c面l石上; Ⅲ-Ⅴ族合金在c面硅酸盐岩上; 和II-VI族组合在c面蓝宝石上。