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    • 1. 发明申请
    • Repairing manufacturing defects in flat panel displays
    • 修复平板显示器中的制造缺陷
    • US20070081105A1
    • 2007-04-12
    • US11545038
    • 2006-10-06
    • Myung-Il ParkYeong-Beom LeeKyung-Seop KimYong-Eui Lee
    • Myung-Il ParkYeong-Beom LeeKyung-Seop KimYong-Eui Lee
    • G02F1/133
    • G02F1/136259
    • Apparatus and methods for repairing display devices of a type that include a first substrate having a plurality of signal lines formed thereon and/or a second substrate having a plurality of color filters formed thereon include a laser that radiates laser light having a wavelength in a range of from about 750 to about 850 nm, or alternatively, of from about 1000 to about 1100 nm, and a pulse width of femtoseconds (10−15 seconds) to picoseconds (10−12 seconds) and arranged such that the laser light can be focused on selected ones of the signal lines and/or color filters. The apparatus enables repairs to be effected on the display device during any one of several manufacturing test processes using only a single laser apparatus, without the need for additional or different repair devices for each test process.
    • 用于修复包括其上形成有多条信号线的第一基板和/或具有形成在其上的多个滤色器的第二基板的类型的显示装置的装置和方法包括:激光器,其将波长在一定范围内的激光 约750至约850nm,或者约1000至约1100nm,脉冲宽度为飞秒(10-15秒)至皮秒(10-12秒) / SUP>秒),并且被布置为使得激光可以聚焦在所选择的信号线和/或滤色器上。 该装置能够在仅使用单个激光装置的几个制造测试过程中的任何一个期间在显示装置上进行修复,而不需要用于每个测试过程的附加或不同的修复装置。
    • 3. 发明授权
    • Repairing manufacturing defects in flat panel displays
    • 修复平板显示器中的制造缺陷
    • US07755380B2
    • 2010-07-13
    • US11545038
    • 2006-10-06
    • Myung-Il ParkYeong-Beom LeeKyung-Seop KimYong-Eui Lee
    • Myung-Il ParkYeong-Beom LeeKyung-Seop KimYong-Eui Lee
    • G01R31/00G02F1/1339
    • G02F1/136259
    • Apparatus and methods for repairing display devices of a type that include a first substrate having a plurality of signal lines formed thereon and/or a second substrate having a plurality of color filters formed thereon include a laser that radiates laser light having a wavelength in a range of from about 750 to about 850 nm, or alternatively, of from about 1000 to about 1100 nm, and a pulse width of femtoseconds (10−15 seconds) to picoseconds (10−12 seconds) and arranged such that the laser light can be focused on selected ones of the signal lines and/or color filters. The apparatus enables repairs to be effected on the display device during any one of several manufacturing test processes using only a single laser apparatus, without the need for additional or different repair devices for each test process.
    • 用于修复包括其上形成有多条信号线的第一基板和/或具有形成在其上的多个滤色器的第二基板的类型的显示装置的装置和方法包括:激光器,其将波长在一定范围内的激光 约750至约850nm,或者约1000至约1100nm,脉冲宽度为飞秒(10-15秒)至皮秒(10-12秒),并且布置成使得激光可以 专注于选定的信号线和/或滤色器。 该装置能够在仅使用单个激光装置的几个制造测试过程中的任何一个期间在显示装置上进行修复,而不需要用于每个测试过程的附加或不同的修复装置。
    • 9. 发明申请
    • METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE
    • 制造薄膜晶体管基板的方法
    • US20080090342A1
    • 2008-04-17
    • US11871457
    • 2007-10-12
    • Duck-Jung LeeDae-Ho SongKyung-Seop KimYong-Eui Lee
    • Duck-Jung LeeDae-Ho SongKyung-Seop KimYong-Eui Lee
    • H01L21/336
    • H01L27/124H01L27/1288H01L29/41733
    • A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a gate insulating film and an active layer on a substrate, forming a data metal layer including a first, second, and third metal layers on the active layer, forming a first photoresist pattern on the data metal layer, dry-etching the third metal layer by using the first photoresist pattern, simultaneously dry-etching the second and first metal layers by using the first photoresist pattern, dry-etching the active layer by using the first photoresist pattern, etching the first photoresist pattern to form a second photoresist pattern by which the channel region is removed and forming a source electrode and a drain electrode by dry-etching the channel region of the data metal layer by using the second photoresist pattern.
    • 一种制造薄膜晶体管(“TFT”)基板的方法包括在基板上形成栅绝缘膜和有源层,在有源层上形成包括第一,第二和第三金属层的数据金属层,形成 在数据金属层上的第一光致抗蚀剂图案,通过使用第一光致抗蚀剂图案对第三金属层进行干蚀刻,同时使用第一光致抗蚀剂图案对第二和第一金属层进行干蚀刻,使用第一光致抗蚀剂图案 蚀刻第一光致抗蚀剂图案以形成除去沟道区的第二光致抗蚀剂图案,并通过使用第二光致抗蚀剂图案干蚀刻数据金属层的沟道区,形成源电极和漏电极。
    • 10. 发明授权
    • Method of manufacturing a thin film transistor substrate
    • 制造薄膜晶体管基板的方法
    • US07803673B2
    • 2010-09-28
    • US11871457
    • 2007-10-12
    • Duck-Jung LeeDae-Ho SongKyung-Seop KimYong-Eui Lee
    • Duck-Jung LeeDae-Ho SongKyung-Seop KimYong-Eui Lee
    • H01L21/00
    • H01L27/124H01L27/1288H01L29/41733
    • A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a gate insulating film and an active layer on a substrate, forming a data metal layer including a first, second, and third metal layers on the active layer, forming a first photoresist pattern on the data metal layer, dry-etching the third metal layer by using the first photoresist pattern, simultaneously dry-etching the second and first metal layers by using the first photoresist pattern, dry-etching the active layer by using the first photoresist pattern, etching the first photoresist pattern to form a second photoresist pattern by which the channel region is removed and forming a source electrode and a drain electrode by dry-etching the channel region of the data metal layer by using the second photoresist pattern.
    • 一种制造薄膜晶体管(“TFT”)基板的方法包括在基板上形成栅绝缘膜和有源层,在有源层上形成包括第一,第二和第三金属层的数据金属层,形成 在数据金属层上的第一光致抗蚀剂图案,通过使用第一光致抗蚀剂图案对第三金属层进行干蚀刻,同时使用第一光致抗蚀剂图案对第二和第一金属层进行干蚀刻,使用第一光致抗蚀剂图案 蚀刻第一光致抗蚀剂图案以形成除去沟道区的第二光致抗蚀剂图案,并通过使用第二光致抗蚀剂图案干蚀刻数据金属层的沟道区,形成源电极和漏电极。