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    • 7. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    • 半导体器件及其制造方法
    • US20160307802A1
    • 2016-10-20
    • US15050505
    • 2016-02-23
    • Dong Hun LEESunhom Steve PAAK
    • Dong Hun LEESunhom Steve PAAK
    • H01L21/8234H01L21/033H01L27/105
    • H01L21/823431H01L21/3086H01L27/1104
    • A semiconductor device fabrication method includes sequentially forming a hard mask layer and a sacrificial layer on a substrate, forming an upper mandrel which includes first to third upper sub-mandrels on the sacrificial layer, the first to third upper sub-mandrels extending in a first direction and being spaced apart from each other in a second direction, a width of the first upper sub-mandrel being smaller than widths of the second and third upper sub-mandrels, forming first spacers on sidewalls of each of the upper sub-mandrels, removing the upper mandrel, etching the sacrificial layer using the first spacers as etching masks to form a lower mandrel that includes a plurality of sub-mandrels, forming second spacers on sidewalls of the lower sub-mandrels, removing the lower mandrel, patterning the hard mask layer and the substrate using the second spacers as etching masks to form first to tenth fins which extend alongside each other in the first direction and are spaced apart from each other in the second direction, removing the first, second, fifth and eighth fins, and forming a first gate electrode that intersects the third, fourth, sixth and seventh fins, and a second gate electrode that intersects the sixth, seventh, ninth and tenth fins while not intersecting the third and fourth fins.
    • 一种半导体器件的制造方法,包括在基板上依次形成硬掩模层和牺牲层,形成在牺牲层上包括第一至第三上部子心轴的上部心轴,第一至第三上部子心轴以第一 方向并且在第二方向上彼此间隔开,第一上部心轴的宽度小于第二和第三上部心轴的宽度,在每个上部心轴的侧壁上形成第一间隔件, 去除上心轴,使用第一间隔件作为蚀刻掩模蚀刻牺牲层,以形成包括多个子心轴的下心轴,在下子心轴的侧壁上形成第二间隔件,移除下心轴, 掩模层和基板,使用第二间隔件作为蚀刻掩模,以形成在第一方向上彼此并列并且与e间隔开的第一至第十个散热片 ach在第二方向上另一个,去除第一,第二,第五和第八鳍片,并且形成与第三,第四,第六和第六鳍片相交的第一栅电极,以及与第六,第七,第九和第九鳍片相交的第二栅电极 第十个翅片,而不与第三和第四个翅片相交。