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    • 1. 发明授权
    • Stepped light guide
    • 步进光导
    • US07493010B1
    • 2009-02-17
    • US12077683
    • 2008-03-20
    • Yen-Po LienHung-Wen Chang
    • Yen-Po LienHung-Wen Chang
    • G02B6/10
    • G02B6/0048
    • A stepped light guide has an incident surface, an emitting surface and a stepped reflecting structure. The emitting surface is adjacent to the incident surface. The stepped reflecting structure is adjacent to the incident surface, faces the emitting surface and has a proximal end, a distal end, multiple planar surfaces and multiple inclined surfaces. The proximal end is adjacent to the incident surface. The distal end is opposite to the proximal end. The planar surfaces are parallel to and separated from the emitting surface by a depth, the depth being gradually reduced from the proximal end to the distal end. The inclined surfaces are formed between every two adjacent planar surfaces. The light guide effectively changes a linear or point light source into a surface light source having uniform illumination.
    • 台阶光导具有入射面,发射面和台阶反射结构。 发射表面与入射表面相邻。 台阶反射结构邻近入射表面,面向发射表面,并具有近端,远端,多个平面表面和多个倾斜表面。 近端与入射面相邻。 远端与近端相对。 平坦表面平行于发射表面并与发射表面分离深度,深度从近端逐渐减小到远端。 倾斜表面形成在每两个相邻的平面之间。 光导有效地将线性或点光源改变成具有均匀照明的表面光源。
    • 2. 发明授权
    • Low power charge pump regulating circuit
    • 低功率电荷泵调节电路
    • US06566847B1
    • 2003-05-20
    • US10207550
    • 2002-07-29
    • Shao-Yu ChouYue-Der ChihHung-Wen Chang
    • Shao-Yu ChouYue-Der ChihHung-Wen Chang
    • G05F146
    • G05F1/46
    • A charge pump voltage regulating circuit which uses a constant current generator and a second current generator, controlled by the output voltage of the charge pump circuit. The current from the constant current generator is divided between the input to a current controlled oscillator and the second current generator. When the output voltage of the charge pump circuit increases the current in the second current generator increases, the current flowing into the current controlled oscillator decreases, the frequency of the clock signals supplied to the charge pump circuit decreases, and the output voltage of the charge pump circuit decreases. When the output voltage of the charge pump circuit decreases the current in the second current generator decreases, the current flowing into the current controlled oscillator increases, the frequency of the clock signals supplied to the charge pump circuit increases, and the output voltage of the charge pump circuit increases.
    • 电荷泵电压调节电路,其使用由电荷泵电路的输出电压控制的恒定电流发生器和第二电流发生器。 来自恒流发生器的电流在电流控制振荡器的输入和第二电流发生器之间分配。 当电荷泵电路的输出电压增加时,第二电流发生器中的电流增加,流入电流控制振荡器的电流减小,提供给电荷泵电路的时钟信号的频率降低,并且电荷的输出电压 泵电路减少。 当电荷泵电路的输出电压降低时,第二电流发生器中的电流减小,流入电流控制振荡器的电流增加,提供给电荷泵电路的时钟信号的频率增加,并且电荷的输出电压 泵电路增加。
    • 5. 发明申请
    • Methods for Particle Reduction in Semiconductor Processing
    • 半导体处理中减少粒子的方法
    • US20130210233A1
    • 2013-08-15
    • US13371185
    • 2012-02-10
    • Tien-Chih ChengHung-Wen ChangDu-Cheng Wang
    • Tien-Chih ChengHung-Wen ChangDu-Cheng Wang
    • H01L21/308
    • H01L21/0209H01L21/02041H01L21/02057H01L21/02096H01L21/0274
    • Methods for removing particles from a wafer for photolithography. A method is provided including providing a semiconductor wafer; attaching a polyimide layer to a backside of the semiconductor wafer; and performing an etch on an active surface of the semiconductor wafer; wherein particles that impinge on the backside during the etch are captured by the polyimide layer. In another method, includes attaching a layer of polyimide film to a backside of a semiconductor wafer; dry etching a material on an active surface of the semiconductor wafer; depositing of an additional layer of material on the active surface of the semiconductor wafer; removing the layer of polyimide film from the backside of the semiconductor wafer; patterning the layer of material using an immersion photolithography process to expose a photoresist on the active surface of the wafer; and repeating the attaching, dry etching, depositing, removing and patterning steps.
    • 用于从用于光刻的晶片去除颗粒的方法。 提供了一种提供半导体晶片的方法; 将聚酰亚胺层附着到所述半导体晶片的背面; 以及对半导体晶片的有源表面进行蚀刻; 其中在蚀刻期间撞击在背面上的颗粒被聚酰亚胺层捕获。 在另一种方法中,包括将聚酰亚胺膜层附着到半导体晶片的背面; 干蚀刻半导体晶片的有源表面上的材料; 在半导体晶片的有源表面上沉积附加的材料层; 从半导体晶片的背面去除聚酰亚胺膜层; 使用浸没光刻工艺图案化材料层以暴露晶片的有源表面上的光致抗蚀剂; 并重复附着,干蚀刻,沉积,去除和图案化步骤。