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1. 发明授权

US06716299B1 Profiled retaining ring for chemical mechanical planarization 失效
标题翻译：用于化学机械平面化的异型保持环
公开(公告)号：US06716299B1
公开(公告)日：2004-04-06
申请号：US10186944
申请日：2002-06-28
申请人： Yehiel Gotkis , Aleksander Owczarz , Jeffrey Yung
发明人： Yehiel Gotkis , Aleksander Owczarz , Jeffrey Yung
IPC分类号： B24B500
CPC分类号： B24B37/32 , B24B21/04
摘要： An invention is provided for a retaining ring for use in a chemical mechanical planarization system. The retaining ring includes an annular retaining ring capable of holding a flatted wafer in position during a CMP operation. The flatted wafer has a first corner and a second corner disposed on a flatted edge of the wafer. Also included is a plurality of profiled teeth disposed along an interior surface of the annular retaining ring. The profiled teeth are separated from each other such that the first comer and the second corner of the wafer do not contact profiled teeth simultaneously at all orientations of the wafer in the retaining ring. In addition, a surface of each tooth that contacts the wafer is inclined so as to form an angle greater than 90° relative to a polishing surface and away from the center of the wafer.
摘要翻译：本发明提供一种用于化学机械平面化系统的保持环。保持环包括能够在CMP操作期间将平坦的晶片保持在适当位置的环形保持环。平坦晶片具有设置在晶片的平坦边缘上的第一角和第二角。还包括沿着环形保持环的内表面设置的多个成型齿。成型齿彼此分离，使得晶片的第一角和第二角不会在保持环中的晶片的所有取向同时接触成型齿。此外，接触晶片的每个齿的表面倾斜，以便相对于抛光表面形成大于90°的角度并远离晶片的中心。

2. 发明授权

US06937915B1 Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control 失效
标题翻译：用于检测化学机械抛光中晶片表面特性的过渡状态和控制的装置和方法
公开(公告)号：US06937915B1
公开(公告)日：2005-08-30
申请号：US10113151
申请日：2002-03-28
申请人： Rodney Kistler , David J. Hemker , Yehiel Gotkis , Aleksander Owczarz , Bruno Morel , Damon V. Williams
发明人： Rodney Kistler , David J. Hemker , Yehiel Gotkis , Aleksander Owczarz , Bruno Morel , Damon V. Williams
IPC分类号： B24B37/005 , B24B49/02 , B24B49/10 , B24B49/14 , H01L21/304 , H01L21/66 , G06F19/00
CPC分类号： B24B37/005 , B24B49/10 , B24B49/14
摘要： In chemical mechanical polishing apparatus, a wafer carrier plate is provided with a cavity for reception of a sensor positioned very close to a wafer to be polished. Energy resulting from contact between a polishing pad and an exposed surface of the wafer is transmitted only a very short distance to the sensor and is sensed by the sensor, providing data as to the nature of properties of the exposed surface of the wafer, and of transitions of those properties. Correlation methods provide graphs relating sensed energy to the surface properties, and to the transitions. The correlation graphs provide process status data for process control.
摘要翻译：在化学机械抛光装置中，晶片承载板设置有用于接收位于非常接近待抛光晶片的传感器的空腔。由抛光垫与晶片的暴露表面之间的接触所产生的能量仅传播到传感器非常短的距离，并由传感器感测，提供关于晶片的暴露表面的性质的数据以及这些属性的转换。相关方法提供了将感测能量与表面性质和转变相关联的图。相关图提供过程控制的过程状态数据。

3. 发明授权

US06929531B2 System and method for metal residue detection and mapping within a multi-step sequence 失效
标题翻译：多步序列中金属残留检测和映射的系统和方法
公开(公告)号：US06929531B2
公开(公告)日：2005-08-16
申请号：US10251033
申请日：2002-09-19
申请人： Yehiel Gotkis , Aleksander Owczarz , David Hemker , Nicolas Bright , Rodney Kistler
发明人： Yehiel Gotkis , Aleksander Owczarz , David Hemker , Nicolas Bright , Rodney Kistler
IPC分类号： B24B37/04 , B24B49/02 , B24B49/10 , H01L21/321 , H01L21/66 , B24B49/00
CPC分类号： B24B37/042 , B24B49/02 , B24B49/10 , H01L21/3212 , H01L22/00
摘要： A system and method of measuring a metallic layer on a substrate within a multi-step substrate process includes modifying a metallic layer on the substrate such as forming a metallic layer or removing at least a portion of the metallic layer. At least one sensor is positioned a predetermined distance from the surface of the substrate. The surface of the substrate is mapped to determine a uniformity of the metallic layer on the surface of the substrate.
摘要翻译：在多步衬底工艺中测量衬底上的金属层的系统和方法包括改变衬底上的金属层，例如形成金属层或去除金属层的至少一部分。至少一个传感器定位在离基板表面预定距离处。映射衬底的表面以确定衬底表面上的金属层的均匀性。

4. 发明申请

US20050000653A1 Method and apparatus of arrayed sensors for metrological control 有权
公开(公告)号：US20050000653A1
公开(公告)日：2005-01-06
申请号：US10881094
申请日：2004-06-29
申请人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas Bright
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas Bright
IPC分类号： C23F1/00 , G01B7/06 , G01R27/00 , H01L21/302
CPC分类号： G01B7/105 , G01B7/107 , G01B2210/44
摘要： A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A sensor array external to the CMP tool is included. The sensor array is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The sensor array provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.

5. 发明授权

US07084621B2 Enhancement of eddy current based measurement capabilities 有权
标题翻译：增强基于涡流的测量能力
公开(公告)号：US07084621B2
公开(公告)日：2006-08-01
申请号：US10256055
申请日：2002-09-25
申请人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
IPC分类号： G01B7/06
CPC分类号： G01B7/105 , G01N27/023
摘要： A method and an apparatus for enhancement of the for measuring resistance-based features of a substrate is provided. The apparatus includes a sensor configured to detect a signal produced by a eddy current generated electromagnetic field. The magnetic field enhancing source is positioned to the alternative side of the object under measurement relative to the sensor to enable the sensitivity enhancing action. The sensitivity enhancing source increases the intensity of the eddy current generated in the object under measurement, and as a result the sensitivity of the sensor. A system enabled to determine a thickness of a layer and a method for determining a resistance-based feature characteristic are also provided.
摘要翻译：提供了用于增强基板的基于电阻的特征的方法和装置。该装置包括被配置为检测由涡流产生的电磁场产生的信号的传感器。磁场增强源相对于传感器定位在测量对象的替代侧，以实现灵敏度增强作用。灵敏度增强源增加了测量对象中产生的涡流的强度，从而提高了传感器的灵敏度。还提供了能够确定层的厚度的系统和用于确定基于电阻的特征特征的方法。

6. 发明授权

US06951624B2 Method and apparatus of arrayed sensors for metrological control 有权
标题翻译：用于计量控制的阵列传感器的方法和装置
公开(公告)号：US06951624B2
公开(公告)日：2005-10-04
申请号：US10881094
申请日：2004-06-29
申请人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
IPC分类号： C23F1/00 , G01B7/06 , G01R27/00 , H01L21/302
CPC分类号： G01B7/105 , G01B7/107 , G01B2210/44
摘要： A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A sensor array external to the CMP tool is included. The sensor array is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The sensor array provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.
摘要翻译：提供了一种用于处理晶片的系统。该系统包括化学机械平面化（CMP）工具。 CMP工具包括限定在壳体内的晶片载体。载体膜固定到底表面并支撑晶片。嵌入晶片载体的传感器。传感器被配置为在晶片中感应涡流以确定晶片的接近度和厚度。包括CMP工具外部的传感器阵列。传感器阵列与嵌入在晶片载体中的传感器连通，并且基本上消除了距离灵敏度。传感器阵列提供晶片的初始厚度，以允许对嵌入在晶片载体中的传感器进行校准。校准偏移了在CMP操作期间确定晶片厚度的不准确性的变量。还提供了一种方法和装置。

7. 发明授权

US06925348B2 Methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control 失效
标题翻译：用于检测化学机械抛光中晶片表面特性的过程状态和控制的方法
公开(公告)号：US06925348B2
公开(公告)日：2005-08-02
申请号：US10966744
申请日：2004-10-14
申请人： Rodney Kistler , David J. Hemker , Yehiel Gotkis , Aleksander Owczarz , Bruno Morel , Damon V. Williams
发明人： Rodney Kistler , David J. Hemker , Yehiel Gotkis , Aleksander Owczarz , Bruno Morel , Damon V. Williams
IPC分类号： B24B37/005 , B24B49/02 , B24B49/10 , B24B49/14 , H01L21/304 , H01L21/66 , G06F19/00
CPC分类号： B24B37/005 , B24B49/10 , B24B49/14
摘要： In chemical mechanical polishing, a wafer carrier plate is provided with a cavity for reception of a sensor positioned very close to a wafer to be polished. Energy resulting from contact between a polishing pad and an exposed surface of the wafer is transmitted only a very short distance to the sensor and is sensed by the sensor, providing data as to the nature of properties of the exposed surface of the wafer, and of transitions of those properties. Correlation methods provide graphs relating sensed energy to the surface properties, and to the transitions. The correlation graphs provide process status data for process control.
摘要翻译：在化学机械抛光中，晶片承载板设置有用于接收位于非常接近待抛光晶片的传感器的空腔。由抛光垫与晶片的暴露表面之间的接触所产生的能量仅传播到传感器非常短的距离，并由传感器感测，提供关于晶片的暴露表面的性质的数据以及这些属性的转换。相关方法提供了将感测能量与表面性质和转变相关联的图。相关图提供过程控制的过程状态数据。

8. 发明授权

US06808442B1 Apparatus for removal/remaining thickness profile manipulation 失效
标题翻译：用于去除/剩余厚度轮廓操作的装置
公开(公告)号：US06808442B1
公开(公告)日：2004-10-26
申请号：US10027947
申请日：2001-12-20
申请人： David Wei , Yehiel Gotkis , Aleksander Owczarz , John M. Boyd , Rod Kistler
发明人： David Wei , Yehiel Gotkis , Aleksander Owczarz , John M. Boyd , Rod Kistler
IPC分类号： B24B100
CPC分类号： B24B37/20 , B24B21/20
摘要： An invention is provided for removal rate profile manipulation during a CMP process. An apparatus of the embodiments of the present invention includes an actuator capable of vertical movement perpendicular to a polishing surface of a polishing pad. The actuator is further capable of flexing the polishing pad independently of a pad support device. Also included in the apparatus is an actuator control mechanism that is in communication with the actuator. The actuator control mechanism is capable of controlling an amount of vertical movement of the actuator, allowing the actuator to provide local flexing of the polishing pad to achieve a particular removal rate profile. The actuator can also be capable of horizontal movement parallel to the polishing surface of the polishing pad.
摘要翻译：提供了一种用于在CMP处理期间的去除速率轮廓操作的发明。本发明的实施例的装置包括能够垂直于抛光垫的抛光表面垂直运动的致动器。致动器还能够独立于衬垫支撑装置使抛光垫挠曲。该装置中还包括与致动器连通的致动器控制机构。致动器控制机构能够控制致动器的垂直运动量，从而允许致动器提供抛光垫的局部弯曲以实现特定的去除速率曲线。致动器还能够平行于抛光垫的抛光表面的水平移动。

9. 发明授权

US07309618B2 Method and apparatus for real time metal film thickness measurement 有权
标题翻译：用于实时金属膜厚度测量的方法和装置
公开(公告)号：US07309618B2
公开(公告)日：2007-12-18
申请号：US10463525
申请日：2003-06-18
申请人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
IPC分类号： H01L21/00
CPC分类号： B24B37/013 , B24B1/005 , B24B49/105 , B24B57/02 , H01L21/67253
摘要： A semiconductor processing system is provided. The semiconductor processing system includes a first sensor configured to isolate and measure a film thickness signal portion for a wafer having a film disposed over a substrate. A second sensor is configured to detect a film thickness dependent signal in situ during processing, i.e. under real process conditions and in real time. A controller configured to receive a signal from the first sensor and a signal from the second sensor. The controller is capable of determining a calibration coefficient from data represented by the signal from the first sensor. The controller is capable of applying the calibration coefficient to the data associated with the second sensor, wherein the calibration coefficient substantially eliminates inaccuracies introduced to the film thickness dependent signal from the substrate. A method for calibrating an eddy current sensor is also provided.
摘要翻译：提供半导体处理系统。半导体处理系统包括：第一传感器，被配置为隔离和测量具有设置在基板上的膜的晶片的膜厚度信号部分。第二传感器被配置为在处理期间，即在实际工艺条件下和实时地在原位检测膜厚依赖信号。控制器，被配置为从第一传感器接收信号和来自第二传感器的信号。控制器能够根据来自第一传感器的信号表示的数据确定校准系数。控制器能够将校准系数应用于与第二传感器相关联的数据，其中校准系数基本上消除了从衬底引入与膜厚度相关的信号的不准确性。还提供了用于校准涡流传感器的方法。

10. 发明申请

US20050066739A1 Method and apparatus for wafer mechanical stress monitoring and wafer thermal stress monitoring 审中-公开
标题翻译：用于晶片机械应力监测和晶片热应力监测的方法和装置
公开(公告)号：US20050066739A1
公开(公告)日：2005-03-31
申请号：US10671978
申请日：2003-09-26
申请人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas Bright
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas Bright
IPC分类号： B24B37/04 , B24B49/14 , B24B49/16 , G01L1/00
CPC分类号： B24B37/015 , B24B49/16
摘要： A chemical mechanical planarization (CMP) system is provided. The CMP system includes a wafer carrier configured to support a wafer during a planarization process, the wafer carrier including a sensor configured to detect a signal indicating a stress being experienced by the wafer during planarization. A computing device in communication with the sensor is included. The computing device is configured to translate the signal to generate a stress map for analysis. A stress relief device responsive to a signal received from the computing device is included. The stress relief device is configured to relieve the stress being experienced by the wafer.
摘要翻译：提供化学机械平面化（CMP）系统。 CMP系统包括被配置为在平坦化处理期间支撑晶片的晶片载体，晶片载体包括被配置成在平坦化期间检测指示由晶片经历的应力的信号的传感器。包括与传感器通信的计算设备。计算设备被配置为平移信号以产生用于分析的应力图。包括响应于从计算设备接收的信号的应力消除装置。应力释放装置被构造成减轻晶片经历的应力。

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