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1. 发明授权

US5584914A Membrane deaerator apparatus 失效
标题翻译：膜除气装置
公开(公告)号：US5584914A
公开(公告)日：1996-12-17
申请号：US381863
申请日：1995-02-07
申请人： Yasutoshi Senoo , Hitoshi Shiraishi , Norio Yasu , Yasuhiro Kawakami , Yukinori Tobisaka , Yasuo Ochi , Yasuhito Mitsukami , Toshitaka Shigematsu , Kazuhiro Tachino , Yasuhiro Miyagama , Kenichiro Takematsu , Nobuaki Yanagihara
发明人： Yasutoshi Senoo , Hitoshi Shiraishi , Norio Yasu , Yasuhiro Kawakami , Yukinori Tobisaka , Yasuo Ochi , Yasuhito Mitsukami , Toshitaka Shigematsu , Kazuhiro Tachino , Yasuhiro Miyagama , Kenichiro Takematsu , Nobuaki Yanagihara
IPC分类号： B01D19/00 , B01D61/00 , C02F1/20 , F04B19/00
CPC分类号： C02F1/20 , B01D19/0031 , B01D19/0068 , B01D61/00 , F04B19/003
摘要： The membrane deaerator according to the present invention includes a plurality of membrane deaerator modules and a water sealed vacuum pump connected thereto. These modules are series-connected between a raw water supply line and a deaeration water supply line. A first vacuum pump is connected to a first deaerator module via a deaeration line, and a second vacuum pump is connected to a second deaerator module via the deaeration line. These vacuum pumps are each provided with a seal water supply line which is used to send the raw water introduced from the water supply line thereinto as seal water to each of the first and second vacuum pumps. A discharge line for the second vacuum pump is connected to the deaeration line for the first vacuum pump. In the membrane deaerator thus formed, the deaeration performance is improved greatly, and a deaeration with dissolved oxygen concentration of several PPB can be carried out.
摘要翻译： PCT No.PCT / JP93 / 00138 Sec。 371日期：1995年2月7日 102（e）日期1995年2月7日PCT提交1993年2月4日PCT公布。第WO94 / 03397号公报日本1994年2月17日根据本发明的膜除气器包括多个膜除气器模块和与其连接的水密封真空泵。这些模块串联连接在原水供应管线和脱气供水管线之间。第一真空泵通过脱气管线连接到第一脱气器模块，并且第二真空泵经由脱气管线连接到第二脱气器模块。这些真空泵各自设置有密封供水管线，其用于将从供水管线引入的原水作为密封水送到第一和第二真空泵中的每一个。用于第二真空泵的排出管线连接到用于第一真空泵的脱气管线。在这样形成的膜除气器中，脱气性能大大提高，可以进行几PPB的溶解氧浓度的脱气。

2. 发明申请

US20080048264A1 Method for forming pattern of stacked film and thin film transistor 有权
标题翻译：堆叠薄膜和薄膜晶体管的形成方法
公开(公告)号：US20080048264A1
公开(公告)日：2008-02-28
申请号：US11976265
申请日：2007-10-23
申请人： Nobuya Seko , Hitoshi Shiraishi , Kenichi Hayashi , Naoto Hirano , Atsushi Yamamoto
发明人： Nobuya Seko , Hitoshi Shiraishi , Kenichi Hayashi , Naoto Hirano , Atsushi Yamamoto
IPC分类号： H01L27/01
CPC分类号： H01L29/66757 , H01L21/31116 , H01L21/32137 , H01L29/78633 , H01L29/78636
摘要： A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtain a light shielding film with a first pattern. The step (c) is forming sequentially a second base insulating film, a semiconductor film and a first oxide film on a substrate. The step (d) is forming a resist pattern with a second pattern on the first oxide film. The step (e) is forming a pattern of a stacked film by dry etching the first oxide film and the semiconductor film, above the light shielding film. The stacked film includes the semiconductor film and the first oxide film. The dry etching includes an etching by using an etching gas and the resist pattern as a mask. The semiconductor film includes a taper angle which is controlled to be within predetermined range.
摘要翻译：一种形成层叠膜的图案的方法，包括步骤（a）至（e）。步骤（a）在透明基板上依次形成第一基底绝缘膜和遮光材料。步骤（b）是图案化遮光材料以获得具有第一图案的遮光膜。步骤（c）在衬底上依次形成第二基底绝缘膜，半导体膜和第一氧化物膜。步骤（d）是在第一氧化膜上形成具有第二图案的抗蚀剂图案。步骤（e）通过在遮光膜上方干蚀刻第一氧化膜和半导体膜来形成堆叠膜的图案。叠层膜包括半导体膜和第一氧化物膜。干蚀刻包括通过使用蚀刻气体和抗蚀剂图案作为掩模的蚀刻。半导体膜包括被控制在预定范围内的锥角。

3. 发明申请

US20050221614A1 Method and apparatus for forming contact hole 失效
标题翻译：形成接触孔的方法和装置
公开(公告)号：US20050221614A1
公开(公告)日：2005-10-06
申请号：US11092611
申请日：2005-03-30
申请人： Hitoshi Shiraishi
发明人： Hitoshi Shiraishi
IPC分类号： H01L21/336 , H01L21/4763 , H01L21/768 , H01L29/45 , H01L29/49 , H01L31/0392
CPC分类号： H01L29/4908 , H01L21/76814 , H01L29/458 , H01L29/66757
摘要： A method of forming a contact hole in an insulating film coating amorphous Si having an irregular surface formed on an insulating substrate, for connecting the amorphous Si to a conductor film formed on the insulating film, including: etching the insulating film using reactive ion etching to a depth whereat said irregularity does not disappear; and sputter-etching the surface of the amorphous Si.
摘要翻译：一种在绝缘膜上形成具有不规则表面的非晶硅的接触孔的方法，其形成在绝缘基板上，用于将非晶Si连接到形成在绝缘膜上的导体膜，包括：使用反应离子蚀刻来蚀刻绝缘膜不规范的深度不消失; 并溅射蚀刻非晶Si的表面。

4. 发明授权

US07781837B2 Stacked film including a semiconductor film having a taper angle, and thin film transistor including the stacked film 有权
标题翻译：包括具有锥角的半导体膜的叠层膜和包括该层叠膜的薄膜晶体管
公开(公告)号：US07781837B2
公开(公告)日：2010-08-24
申请号：US11976265
申请日：2007-10-23
申请人： Nobuya Seko , Hitoshi Shiraishi , Kenichi Hayashi , Naoto Hirano , Atsushi Yamamoto
发明人： Nobuya Seko , Hitoshi Shiraishi , Kenichi Hayashi , Naoto Hirano , Atsushi Yamamoto
IPC分类号： H01L27/12 , H01L27/01 , H01L31/0392
CPC分类号： H01L29/66757 , H01L21/31116 , H01L21/32137 , H01L29/78633 , H01L29/78636
摘要： A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtain a light shielding film with a first pattern. The step (c) is forming sequentially a second base insulating film, a semiconductor film and a first oxide film on a substrate. The step (d) is forming a resist pattern with a second pattern on the first oxide film. The step (e) is forming a pattern of a stacked film by dry etching the first oxide film and the semiconductor film, above the light shielding film. The stacked film includes the semiconductor film and the first oxide film. The dry etching includes an etching by using an etching gas and the resist pattern as a mask. The semiconductor film includes a taper angle which is controlled to be within predetermined range.
摘要翻译：一种形成层叠膜的图案的方法，包括步骤（a）至（e）。步骤（a）在透明基板上依次形成第一基底绝缘膜和遮光材料。步骤（b）是图案化遮光材料以获得具有第一图案的遮光膜。步骤（c）在衬底上依次形成第二基底绝缘膜，半导体膜和第一氧化物膜。步骤（d）是在第一氧化膜上形成具有第二图案的抗蚀剂图案。步骤（e）通过在遮光膜上方干蚀刻第一氧化膜和半导体膜来形成堆叠膜的图案。叠层膜包括半导体膜和第一氧化物膜。干蚀刻包括通过使用蚀刻气体和抗蚀剂图案作为掩模的蚀刻。半导体膜包括被控制在预定范围内的锥角。

5. 发明授权

US06933241B2 Method for forming pattern of stacked film 有权
标题翻译：堆叠薄膜形成方法
公开(公告)号：US06933241B2
公开(公告)日：2005-08-23
申请号：US10446713
申请日：2003-05-29
申请人： Hitoshi Shiraishi , Kenichi Hayashi , Naoto Hirano , Atsushi Yamamoto
发明人： Hitoshi Shiraishi , Kenichi Hayashi , Naoto Hirano , Atsushi Yamamoto
IPC分类号： H01L21/311 , H01L21/3213 , H01L21/336 , H01L21/302
CPC分类号： H01L29/66757 , H01L21/31116 , H01L21/32137
摘要： A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switched from the fluorine-based gas to a chlorine-based gas at a point of time when a lower oxide film as an underlying film of the semiconductor film is exposed. As the fluorine-based gas, a mixed gas of CF4 and O2 is used, and suitably, a gas ratio of CF4 and O2 in the mixture gas is set at 1:1, and the dry etching is performed therefor. By this etching, a side face of a two-layer structure of the semiconductor film and upper oxide film is optimally tapered, and a crack or a disconnection is prevented from being occurring in a film crossing over the two-layer structure.
摘要翻译：用作薄膜晶体管的有源区的半导体膜和保护半导体膜的上氧化膜被干蚀刻以形成有源区。在这种情况下，使用氟系气体作为蚀刻气体，在作为下面的膜的低氧化膜的时刻，将蚀刻气体从氟系气体切换为氯系气体露出半导体膜。作为氟系气体，使用CF 4和O 2的混合气体，适当地是CF 3〜4的气体比混合气体中的O 2设定为1:1，并进行干法蚀刻。通过该蚀刻，半导体膜和上氧化物膜的两层结构的侧面是最佳的锥形，并且防止了在跨越两层结构的膜中发生裂纹或断开。

6. 发明申请

US20050156239A1 Method for forming pattern of stacked film and thin film transistor 有权
标题翻译：堆叠薄膜和薄膜晶体管的形成方法
公开(公告)号：US20050156239A1
公开(公告)日：2005-07-21
申请号：US10999125
申请日：2004-11-30
申请人： Nobuya Seko , Hitoshi Shiraishi , Kenichi Hayashi , Naoto Hirano , Atsushi Yamamoto
发明人： Nobuya Seko , Hitoshi Shiraishi , Kenichi Hayashi , Naoto Hirano , Atsushi Yamamoto
IPC分类号： H01L21/311 , H01L21/3213 , H01L21/336 , H01L21/00 , H01L21/461 , H01L27/01 , H01L31/0392
CPC分类号： H01L29/66757 , H01L21/31116 , H01L21/32137 , H01L29/78633 , H01L29/78636
摘要： A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtain a light shielding film with a first pattern. The step (c) is forming sequentially a second base insulating film, a semiconductor film and a first oxide film on a substrate. The step (d) is forming a resist pattern with a second pattern on the first oxide film. The step (e) is forming a pattern of a stacked film by dry etching the first oxide film and the semiconductor film, above the light shielding film. The stacked film includes the semiconductor film and the first oxide film. The dry etching includes an etching by using an etching gas and the resist pattern as a mask. The semiconductor film includes a taper angle which is controlled to be within predetermined range.
摘要翻译：一种形成层叠膜的图案的方法，包括步骤（a）至（e）。步骤（a）在透明基板上依次形成第一基底绝缘膜和遮光材料。步骤（b）是图案化遮光材料以获得具有第一图案的遮光膜。步骤（c）在衬底上依次形成第二基底绝缘膜，半导体膜和第一氧化物膜。步骤（d）是在第一氧化膜上形成具有第二图案的抗蚀剂图案。步骤（e）通过在遮光膜上方干蚀刻第一氧化膜和半导体膜来形成堆叠膜的图案。叠层膜包括半导体膜和第一氧化物膜。干蚀刻包括通过使用蚀刻气体和抗蚀剂图案作为掩模的蚀刻。半导体膜包括被控制在预定范围内的锥角。

7. 发明申请

US20100025685A1 Method and apparatus for forming contact hole 审中-公开
标题翻译：形成接触孔的方法和装置
公开(公告)号：US20100025685A1
公开(公告)日：2010-02-04
申请号：US12585789
申请日：2009-09-24
申请人： Hitoshi Shiraishi
发明人： Hitoshi Shiraishi
IPC分类号： H01L23/48 , C23C14/46 , H01L21/768 , H01L29/04
CPC分类号： H01L29/4908 , H01L21/76814 , H01L29/458 , H01L29/66757
摘要： A method of forming a contact hole in an insulating film coating amorphous Si having an irregular surface formed on an insulating substrate, for connecting the amorphous Si to a conductor film formed on the insulating film includes etching the insulating film using reactive ion etching to a depth whereat the irregularity does not disappear, and sputter-etching by physically colliding Ar radicals produced by Ar gas plasma discharge onto the surface of the amorphous Si.
摘要翻译：在绝缘膜上形成具有不规则表面的非晶Si的接触孔的方法，用于将非晶Si连接到在绝缘膜上形成的导体膜，用于将绝缘膜用反应离子蚀刻蚀刻到深度其中不规则性不消失，并且通过将由Ar气体等离子体放电产生的Ar自由物体碰撞到非晶Si的表面上进行溅射蚀刻。

8. 发明授权

US07618898B2 Method and apparatus for forming contact hole 失效
标题翻译：形成接触孔的方法和装置
公开(公告)号：US07618898B2
公开(公告)日：2009-11-17
申请号：US11092611
申请日：2005-03-30
申请人： Hitoshi Shiraishi
发明人： Hitoshi Shiraishi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L29/4908 , H01L21/76814 , H01L29/458 , H01L29/66757
摘要： A method of forming a contact hole in an insulating film coating amorphous Si having an irregular surface formed on an insulating substrate, for connecting the amorphous Si to a conductor film formed on the insulating film, including: etching the insulating film using reactive ion etching to a depth whereat said irregularity does not disappear; and sputter-etching the surface of the amorphous Si.
摘要翻译：一种在绝缘膜上形成具有不规则表面的非晶硅的接触孔的方法，其形成在绝缘基板上，用于将非晶Si连接到形成在绝缘膜上的导体膜，包括：使用反应离子蚀刻来蚀刻绝缘膜不规范的深度不消失; 并溅射蚀刻非晶Si的表面。

9. 发明授权

US07317227B2 Method for forming pattern of stacked film 有权
标题翻译：堆叠薄膜形成方法
公开(公告)号：US07317227B2
公开(公告)日：2008-01-08
申请号：US10855394
申请日：2004-05-28
申请人： Hitoshi Shiraishi , Kenichi Hayashi , Naoto Hirano , Atsushi Yamamoto
发明人： Hitoshi Shiraishi , Kenichi Hayashi , Naoto Hirano , Atsushi Yamamoto
IPC分类号： H01L27/01
CPC分类号： H01L29/66757 , H01L21/31116 , H01L21/32137
摘要： A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switched from the fluorine-based gas to a chlorine-based gas at a point of time when a lower oxide film as an underlying film of the semiconductor film is exposed. As the fluorine-based gas, a mixed gas of CF4 and O2 is used, and suitably, a gas ratio of CF4 and O2 in the mixture gas is set at 1:1, and the dry etching is performed therefor. By this etching, a side face of a two-layer structure of the semiconductor film and upper oxide film is optimally tapered, and a crack or a disconnection is prevented from being occurring in a film crossing over the two-layer structure.
摘要翻译：用作薄膜晶体管的有源区的半导体膜和保护半导体膜的上氧化膜被干蚀刻以形成有源区。在这种情况下，使用氟系气体作为蚀刻气体，在作为下面的膜的低氧化膜的时刻，将蚀刻气体从氟系气体切换为氯系气体露出半导体膜。作为氟系气体，使用CF 4和O 2的混合气体，适当地是CF 3〜4的气体比混合气体中的O 2设定为1:1，并进行干法蚀刻。通过该蚀刻，半导体膜和上氧化物膜的两层结构的侧面是最佳的锥形，并且防止了在跨越两层结构的膜中发生裂纹或断开。

10. 发明授权

US07303945B2 Method for forming pattern of stacked film and thin film transistor 有权
标题翻译：堆叠薄膜和薄膜晶体管的形成方法
公开(公告)号：US07303945B2
公开(公告)日：2007-12-04
申请号：US10999125
申请日：2004-11-30
申请人： Nobuya Seko , Hitoshi Shiraishi , Kenichi Hayashi , Naoto Hirano , Atsushi Yamamoto
发明人： Nobuya Seko , Hitoshi Shiraishi , Kenichi Hayashi , Naoto Hirano , Atsushi Yamamoto
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/66757 , H01L21/31116 , H01L21/32137 , H01L29/78633 , H01L29/78636
摘要： A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtain a light shielding film with a first pattern. The step (c) is forming sequentially a second base insulating film, a semiconductor film and a first oxide film on a substrate. The step (d) is forming a resist pattern with a second pattern on the first oxide film. The step (e) is forming a pattern of a stacked film by dry etching the first oxide film and the semiconductor film, above the light shielding film. The stacked film includes the semiconductor film and the first oxide film. The dry etching includes an etching by using an etching gas and the resist pattern as a mask. The semiconductor film includes a taper angle which is controlled to be within predetermined range.
摘要翻译：一种形成层叠膜的图案的方法，包括步骤（a）至（e）。步骤（a）在透明基板上依次形成第一基底绝缘膜和遮光材料。步骤（b）是图案化遮光材料以获得具有第一图案的遮光膜。步骤（c）在衬底上依次形成第二基底绝缘膜，半导体膜和第一氧化物膜。步骤（d）是在第一氧化膜上形成具有第二图案的抗蚀剂图案。步骤（e）通过在遮光膜上方干蚀刻第一氧化膜和半导体膜来形成堆叠膜的图案。叠层膜包括半导体膜和第一氧化物膜。干蚀刻包括通过使用蚀刻气体和抗蚀剂图案作为掩模的蚀刻。半导体膜包括被控制在预定范围内的锥角。

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